POORNIMA GROUP OF INSTITUTIONS

A Seminar on
TRI GATE TRANSISTERS

2013-2014 Submitted To: Mr. Bhoopesh Kumawat Mrs. Namrata Saxena Yadav (Seminar Cordinator ECE) Guided By:
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Submitted By: Lakshya Singh Khiriya (PGI/EC/10/59)

CONTENTS
INTRODUCTION

NEED FOR 3D TRANSISTER TODAYS NEWS HISTORY ARCHITECTURE

22nm 3D TRI GATE TRANSISTER

TRI GATE-SURROUNDING THE CHANNEL MOORES LAW

APPLICATION
TRI GATE TRANSISTER BENEFITS

ADVANTAGES

CONCLUSION

Todays News
The worlds first 3-D Tri-Gate transistors on a production technology New 22nm transistors have an unprecedented combination of power savings and performance gains. These benefits will enable new innovations across a broad range of devices from the smallest handheld devices to powerful cloud-based servers. The transition to 3-D transistors continues the pace of technology advancement, fueling Moores Law for years to come. The worlds first demonstration of a 22nm microprocessor --code-named Ivy Bridge --that will be the first high-volume chip to use 3-D Tri-Gate transistors

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22NM SILICON TECHNOLOGY BREAKTHROUGH BENEFITS BROAD RANGE OF INTEL ARCHITECTURE DEVICES
New 22nm 3-D transistors deliver unprecedented performance improvement and power reduction for Intels product portfolio
This benefits smallest handhelds to powerful cloud-based servers 37% performance increase at low voltage vs. 32nm planar transistors* Consumes only half the power at the same performance level as 2-D transistors on 32nm planar chips*

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