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Cau Kien Dien Tu
Cau Kien Dien Tu
Cau Kien Dien Tu
CU KIN IN T
(Dng cho sinh vin h o to i hc t xa) Lu hnh ni b
H NI - 2007
CU KIN IN T
Bin son :
THS. TRN TH CM
Cu kin in t
LI NI U Tp gio trnh "Cu kin in t " c bin son lm ti liu ging dy v hc tp cho cc sinh vin chuyn ngnh k thut in t - Vin thng, ng thi gio trnh cng c th c s dng cho cc sinh vin chuyn ngnh Cng ngh thng tin, v lm ti liu tham kho cho cc k s chuyn ngnh in t - Vin thng. Gio trnh c vit theo chng trnh cng mn hc "Cu kin in t v quang in t" ca Hc vin Cng ngh Bu chnh Vin thng. Ni dung ca gio trnh c trnh by mt cch r rng, c h thng cc kin thc c bn v hin i v vt liu v cc cu kin in t - quang in t ang s dng trong ngnh k thut in t v k thut vin thng. Gio trnh "Cu kin in t" gm 8 chng. + Chng 1 Gii thiu chung v cu kin in t v vt liu in t. Trong chng ny a ranh ngha v cc cch phn loi ca cu kin in t, cc c tnh v cc tham s k thut ca cc loi vt liu s dng trong k thut in t - vin thng nh cht cch in, cht dn in, cht bn dn v vt liu t. + Chng 2 trnh by v cc cu kin in t th ng nh in tr, t in, cun dy v bin p, cng cc c tnh v tham s c bn ca cc cu kin ny, cch nhn bit v cch c cc tham s ca cc linh kin thc t. + Chng 3 trnh by v it bn dn. Trong chng ny, gio trnh nu ln tnh cht vt l c bit ca lp tip xc P - N, ng thi trnh by chi tit v cu to v nguyn l hot ng cng nh cc c tuyn, tham s k thut ca it bn dn. Ngoi ra, trong chng 3 cn trnh by v cc ch lm vic ca i t bn dn v gii thiu mt s loi i t thng dng v c bit. + Chng 4 trnh by v cu to v nguyn l hot ng ca tranzito lng cc (BJT). ng thi, trong chng ny cng trnh by c th v ba cch mc c bn ca tranzito trong cc s mch khuch i, cc c tnh v c im ca tng cch mc. ng thi chng 4 cng trnh by v cc cch phn cc v cc mch tng ng ca tranzito. + Chng 5 gii thiu chung v tranzito hiu ng trng (FET) v phn loi tranzito trng. Trong chng trnh by c th v cu to v nguyn l hot ng cng nh cc cch phn cc cho tranzito trng loi JFET v MOSFET. + Chng 6 gii thiu v cu kin thuc h thyristo nh chnh lu silic c iu khin, triac, diac; nu cu to v nguyn l hot ng cng nh ng dng ca chng. ng thi, chng 6 cng trnh by v cu to v nguyn l hot ng ca tranzito n ni (UJT). + Chng 7 cp n s pht trin tip theo ca k thut in t l vi mch tch hp. Trong chng ny trnh by v khi nim, phn loi cng nh s lc v cng ngh ch to vi mch bn dn, l loi vi mch c sn xut v s dng rng ri hin nay. Ngoi ra, trong chng 4 cn trnh by c tnh v tham s ca trnh by v c im cng nh tham s ca hai loi vi mch: vi mch tuyn tnh v vi mch s. Trong gii thiu chi tit v vi mch khuch i thut ton (OA), y l loi vi mch vn nng c s dng rng ri nhiu chc nng khc nhau. + Chng 8 trnh by v cc cu kin quang in t. Chng ny trnh by kh t m v h thng v cc loi cu kin quang in t bn dn v khng bn dn ang c s dng trong k thut in t v k thut vin thng. y trnh by v cc cu kin quang in t s dng trong k thut in t v thng tin quang: - Cc linh kin pht quang: LED ch th, LED hng ngoi, LASER, v mt ch th tinh th lng LCD.
Cu kin in t
- Cc linh kin thu quang: in tr quang, it quang, tranzito quang, thyristo quang, t bo quang in v pin mt tri. Trong tp gio trnh ny tc gi s dng nhiu ti liu tham kho v bin son theo mt trt t logic nht nh. Tuy nhin, tp gio trnh khng trnh khi nhng thiu st v hn ch. Chng ti rt mong nhn c s gp ca cc nh chuyn mn, cc bn ng nghip v nhng ai quan tm n chuyn ngnh ny b sung v hon chnh tp gio trnh "Cu kin in t" c tt hn. Cc kin ng gp xin gi n b mn K thut in t - Khoa K thut in t I, Hc vin Cng ngh Bu chnh Vin thng, km 10 ng Nguyn Tri H Ni - H ng. Xin chn thnh cm n!
Cu kin in
CHNG 1 GII THIU CHUNG V CU KIN IN T GII THIU CHNG Chng 1 gii thiu khi nim chung v cu kin in t, gip cho sinh vin chuyn ngnh in t Vin thng c khi nim ban u bao qut v nhng linh kin in t c s dng trong cc mch in t. ng thi trong chng 1 cng gii thiu v cc c tnh vt l in ca cc vt liu c bn dng trong k thut in t. Hc xong chng 1, sinh vin phi nm c khi nim chung v cu kin in t, khi nim s b v mch in in t. Sinh vin cng phi hiu c cc c tnh k thut ca cc loi vt liu dng trong lnh vc k thut in t, mt s loi vt liu thng dng thng dng v ng dng chng. NI DUNG 1.1. GII THIU CHUNG Cu kin in t l mn hc v cu to, nguyn l hot ng v mt s ng dng ca cc linh kin c s dng trong cc mch in t thc hin mt chc nng k thut no ca mt b phn trong mt thit b in t chuyn dng cng nh thit b in t dn dng. Cu kin in t c rt nhiu loi thc hin cc chc nng khc nhau trong mch in t. Mun to ra mt thit b in t chng ta phi s dng rt nhiu cc linh kin in t, t nhng linh kin n gin nh in tr, t in, cun dy...n cc linh kin khng th thiu c nh it, tranzito...v cc linh kin in t t hp phc tp. Chng c u ni vi nhau theo cc s mch c thit k, tnh ton khoa hc thc hin chc nng ca thit b thng thng nh my radiocassettes, tivi, my tnh, cc thit b in t y t... n cc thit b thng tin lin lc nh tng i in thoi, cc trm thu - pht thng tin hay cc thit b v tinh v tr v.v...Ni chung cu kin in t l loi linh kin to ra cc thit b in t do vy chng rt quan trng trong i sng khoa hc k thut v mun s dng chng mt cch hiu qu th chng ta phi hiu bit v nm chc cc c im ca chng. 1.2. PHN LOI CU KIN IN T. C nhiu cch phn loi cu kin in t da theo nhng tiu ch khc nhau. y chng ta k n mt s cch phn loi thng thng: 1.2.1. Phn loi da trn c tnh vt l: Da vo cc c tnh vt l cu kin in t c th chia lm 2 loi: - Cc cu kin in t thng thng: y l cc linh kin in t c c tnh vt l in in t thng thng. Chng hot ng di tc dng ca cc sng in t c tn s t cc thp (f = 1Khz10Khz) n tn s siu cao tn(f = 10Ghz 100Ghz) hoc sng milimet. - Cu kin quang in t: y l cc linh kin in t c c tnh vt l in quang Chng hot ng di tc dng ca cc sng in t c tn s rt cao (f = 10 8 n 10 9 Ghz) thng c gi l nh sng. 1.2.2. Phn loi da theo lch s pht trin ca cng ngh in t: Ngi ta chia cu kin in t ra lm 5 loi: - Cu kin in t chn khng: l cc cu kin in t m s dn in xy ra trong mi trng chn khng.
3
Cu kin in
Cu kin in t c kh: l cc cu kin in t m s dn in xy ra trong mi trng kh tr. - Cu kin in t bn dn: l cc cu kin in t m s dn in xy ra trong mi trng cht bn dn. - Cu kin vi mch: l cc chp bn dn c tch hp t cc cu kin bn dn theo s mch thit k trc v c mt hoc mt s chc nng nht nh. - Cu kin nan: y l cc cu kin c kch thc nanomet c ch to theo cng ngh nan nn n c cc tnh cht cng nh kh nng tin ch v cng c bit, khc hn vi cc cu kin c kch thc ln hn thng thng (t m tr ln). 1.2.3. Phn loi da trn chc nng x l tn hiu: Da theo chc nng x l tn hiu ngi ta chia cu kin in t thnh 2 loi l cu kin in t tng t (in t analoge) v cu kin in t s (in t digital). - Cu kin in t tng t l cc linh kin c chc nng x l cc tn hiu in xy ra lin tc theo thi gian. - Cu kin in t s l cc linh kin c chc nng x l cc tn hiu in xy ra ri rc, khng lin tc theo thi gian. 1.2.4. Phn loi da vo ng dng ca cu kin in t: Da vo ng dng ca cu kin in t ngi ta chia cu kin in t ra lm 2 loi l cc cu kin in t th ng v cc cu kin in t tch cc: - Cu kin in t th ng l cc linh kin in t ch c kh nng x l v tiu th tn hiu in - Cu kin in t tch cc l cc linh kin in t c kh nng bin i tn hiu in, to ra v khuch i tn hiu in. 1.3. KHI NIM V MCH IN V H THNG IN T 1.3.1. Mch in: Mch in l mt tp hp gm c ngun in (ngun p hoc ngun dng) v cc cu kin in t cng dy dn in c u ni vi nhau theo mt s mch thit k nhm thc hin mt chc nng no ca mt thit b in t hoc mt h thng in t. V d nh mch to dao ng hnh sin, mch khuch i micro, mch gii m nh phn, mch m xung, hoc n gin ch l mt mch phn p,... 1.3.2. H thng in t H thng in t l mt tp hp cc mch in t n gin c cc chc nng k thut ring thnh mt thit b in t c chc nng k thut nht nh hoc mt h thng in t phc tp c chc nng k thut ring nh my thu hnh, my hin sng, h thng pht thanh truyn hnh, trm truyn dn vi ba, h thng thng tin quang...Mch in t hay mt h thng in t bao gi cng c ngun in cung cp mt chiu (DC) phn cc cho cc cu kin in t hot ng ng ch v ngun tn hiu cn x l trong mch. 1.4. VT LIU IN T. Cc vt liu s dng trong k thut in t rt a dng v rt nhiu. Chng c gi chung l vt liu in t phn bit vi cc loi vt liu s dng trong cc lnh vc khc. Tu theo mc ch s dng v yu cu k thut m la chn vt liu sao cho thch hp m bo v cc ch tiu k thut, d gia cng v gi thnh r - Da vo l thuyt vng nng lng ngi ta chia vt cht ra lm ba loi l cht cch in, cht bn dn v cht dn in. Theo l thuyt ny th cc trng thi nng lng ca
4
Cu kin in
nguyn t vt cht c phn chia thnh ba vng nng lng khc nhau l: vng ha tr, vng dn v vng cm. Mc nng lng cao nht ca vng ha tr k hiu l EV; mc nng lng thp nht ca vng dn k hiu l EC v rng vng cm k hiu l EG. + Cht cch in: Cu trc vng nng lng ca cht cch in c m t trong hnh 1-1a. rng vng cm EG c gi tr n vi eV (EG 2eV). + Cht bn dn: Cht bn dn c rng vng cm rt nh (EG < 2eV), xem hnh 1-1b. E EC Di dn in t
EG > 2 eV
E EC Di dn EG < 2 eV
EV
EG = 0
EV
L trng
EV
EC
Di ho tr
Di ho tr a/ b/ Hnh 1- 1: Cu trc di nng lng ca vt cht a- Cht cch in; b- Cht bn dn; c- Kim loi + Kim loi: Cu trc vng nng lng ca tinh th khng c vng cm, do vng ha tr ha vo vng dn (hnh 1-1c) nn in t ha tr chnh l cc in t t do. - Da vo ng dng, cc vt liu in t thng c phn chia thnh 4 loi l cht cch in (hay cht in mi), cht dn in, cht bn dn v vt liu t. 1.4.1. Cht cch in (hay cht in mi). a. nh ngha. Cht cch in, hay cn gi l cht in mi. Cht cch in c in tr sut cao vo khong 107 1017m nhit phng. Cht cch in gm phn ln cc vt liu v c cng nh hu c. Chng c th th kh, th lng v th rn. b. Cc tnh cht ca cht in mi. - thm thu in tng i (hay cn gi l hng s in mi): Hng s in mi k hiu l , n biu th kh nng phn cc ca cht in mi v c xc nh bng biu thc: C = d (1. 1) C0 Trong : Cd l in dung ca t in s dng cht in mi; C0 l in dung ca t in s dng cht in mi l chn khng hoc khng kh. c/
Cu kin in
- tn hao in mi (Pa): tn hao in mi l cng sut in chi ph lm nng cht in mi khi t n trong in trng v c tnh theo cng thc tng qut sau:
Pa = U 2Ctg
(1. 2)
Trong : Pa l tn hao in mi o bng ot (w) U l in p t ln t in o bng vn (V) C l in dung ca t in dng cht in mi o bng Farad (F) l tn s gc o bng rad/s tg l gc tn hao in mi - bn v in ca cht in mi (E.t.): Nu ta t mt cht in mi vo trong mt in trng m n b mt kh nng cch in - ta gi l hin tng nh thng cht in mi. Tr s in p khi xy ra hin tng nh thng cht in mi gi l in p nh thng U.t. thng o bng KV, v cng in trng tng ng vi im nh thng gi l bn v in. bn v in k hiu l E.t. v c tnh theo cng thc:
E .t =
U .t d
(1. 3)
Trong : U.t. - l in p nh thng cht in mi d - l b dy ca cht in mi b nh thng - Nhit chu ng: L nhit cao nht m cht in mi gi c cc tnh cht l ha ca n. - Dng in trong cht in mi (I): Dng in trong cht in mi gm c 2 thnh phn l dng in chuyn dch v dng in r. Dng in chuyn dch IC.M (hay gi l dng in phn cc): Qu trnh chuyn dch phn cc ca cc in tch lin kt trong cht in mi s to nn dng in phn cc IC.M. Khi in p xoay chiu dng in chuyn dch tn ti trong sut thi gian cht in mi nm trong in trng. Khi in p mt chiu dng in chuyn dch ch tn ti cc thi im ng hoc ngt in p. Dng in r Ir: Dng in r l dng in c to ra do cc in tch t do v in t pht x ra chuyn ng di tc ng ca in trng. Dng in tng qua cht in mi s l: I = IC.M. + Ir - in tr cch in ca cht in mi: in tr cch in c xc nh theo tr s ca dng in r:
R c. =
I ICM
(1. 4)
Cu kin in
IC.M. - Tng cc thnh phn dng in phn cc c.Phn loi v ng dng ca cht in mi. Cht in mi c chia lm 2 loi l cht in mi th ng v cht in mi tch cc. - Cht in mi th ng cn gi l vt liu cch in v vt liu t in. Bng 1.1 gii thiu mt s cht in mi thng dng v c tnh ca chng. - Cht in mi tch cc l cc vt liu c th iu khin c nh: + V in trng c gm, thu tinh,.. + V c hc c cht p in nh thch anh p in + V nh sng c cht hunh quang + Electric hay ci chm in l vt cht c kh nng gi c s phn cc ln v lu di. Bng 1.1. Gii thiu c tnh ca mt s cht in mi th ng thng dng Vt liu E.t. KV/mm 50 200 15 30 tg (.m) 1015 3.1014 4.103 1,2.103 1,6.103 T trng KG/m3 2,8.103 ng dng
68 6,37,5
0,0004
10 40 9 12 30 8 60 20 35 20 30 10 15 15 20 2030 20
12900 0,0020,025 17004500 0,0006 4 4,6 0,05 0,12 34 34 3,8 4,5 2,8 2,9 2,2 2,3 3,5 2,3 2,4 37 2,2 0,15
T in, cch in Gi , t in.. T cao tn, t tn thp.. Cch in Cch in T in, cch in Cch in Tm chng m Tm chng m Lm sch mi hn Cch in cao tn V dy dn T in, cp in
0,04 0,08
1,5.103
1016
0,9.103 1,6.103
1.4.2. Cht dn in a.nh ngha. Cht dn in l vt liu c dn in cao. in tr sut ca cht dn in nm trong khong 10-8 10-5 m. Trong t nhin cht dn in c th l cht rn, cht lng hoc cht kh.
7
Cu kin in
=R
trong :
(1. 5)
S - tit din ngang ca dy dn [mm2; m2] l - chiu di dy dn [mm; m] R - tr s in tr ca dy dn [] in tr sut ca cht dn in nm trong khong t: = 0,016 .m (ca bc Ag) n = 10 .m (ca hp kim st - crm - nhm) - H s nhit ca in tr sut (): H s nhit ca in tr sut biu th s thay i ca in tr sut khi nhit thay i 0 1 C. Khi nhit tng th in tr sut cng tng ln theo quy lut: t = 0 (1 + t) (1. 6) t - in tr sut nhit t (0C) 0 - in tr sut nhit 00C - h s nhit ca in tr sut [K-1] cho kim loi nguyn cht th h s nhit ca chng hu nh u bng nhau v bng: = 1/ 273,15 K-1 = 0,004 K-1. - H s dn nhit : Lng nhit truyn qua din tch b mt S trong thi gian t l: trong :
Q=
T St l
(1. 7)
Trong : - l h s dn nhit [w/ (m.K)]. T/l - l gradien nhit (T l lng chnh lch nhit hai im cch nhau mt khong l l) S - l din tch b mt t - l thi gian - Cng thot ca in t trong kim loi: Nng lng cn thit cp thm cho in t n thot ra khi b mt kim loi c gi l cng thot ca kim loi. EW - in th tip xc: Nghin cu hai cht kim loi tip xc vi nhau nh tip xc C trong hnh 1- 2. A B
Cu kin in
Hiu in th tip xc gia hai kim loi ny c xc nh l s chnh lch th nng EAB gia im A v B v c tnh theo cng thc: EAB = EW2 - EW1 (1. 8) Tng ng vi th nng EAB (o bng eV) ta c in th tip xc (o bng Vn), k hiu l VAB v c tr s bng EAB. Nu kim loi 1 v 2 ging nhau, in th tip xc gia chng bng 0. Nu hai kim loi khc nhau th kim loi no c cng thot thp hn tr thnh in tch dng v kim loi c cng thot cao hn s tr thnh in tch m. b. Mt s loi vt liu dn in thng dng. Cht dn in c chia lm 2 loi l cht dn in c in tr sut thp v cht dn in c in tr sut cao. - Cht dn in c in tr sut thp: Cht dn in c in tr sut thp (hay dn in cao) thng dng lm vt liu dn in. Bng 1.2 gii thiu mt s cht dn in c in tr sut thp v tham s ca chng. Bng 1.2. Cht dn in c in tr sut thp v cc tnh cht in. Vt liu Bc (Ag) ng (Cu)
(.m)
0,0165 0,0175
(K-1)
0,0038 0,0043
ng dng M cng tc, bn cc, ng dn sng Dy dn, chn cc linh kin, ng dn sng l tip xc,dy in thoi, dy in tr Dy dn, in cc, v t hn Cu ch, v cp, acqui axit. Si nung, cng tc, in cc Si nung, cng tc, in cc Si nung, cng tc, in cc Dy dn cao tn, chn vi mch, ng dn sngchng n mn Tip im, cht dn in, ng h o in...
Hp kim ng Nhm (Al) Thic (Sn) Ch (Pb) Vonfram (W) Moliden (Mo) Niken (Ni) Vng (Au)
0,0300,06 0,002 0,0267 0,115 0,21 0,055 0,057 0,078 0,024 0,0045 0,0042 0,004
900 660 230 330 2500 1500 1450 2,7 7,3 11,4 19,31 10.2 8,9 19,31
0,105
Cu kin in
- Cht dn in c in tr sut cao: Cc hp kim c in tr sut cao dng ch to cc dng c o in, cc in tr, bin tr, cc dy may so, cc thit b nung nng bng in. Bng 1.3. Mt s hp kim thng thng v tnh cht in ca chng. Vt liu Manganhin Constantan Nicrm Cacbon (C)
(.m)
0,42 0,48 0,48 0,52 1 1,2 0,28 3,5
(K-1)
0,00005 0,00005 0,00015 0,00004
t trng ng dng 3 (10 Kg/ m3) 8,4 in tr mu, dng c o in 8,9 Bin tr, si t 8,2 Si nung, m hn, bp in, bn l in tr, cht bi trn, micrphn
1.4.3. Cht bn dn a. nh ngha v c im ca cht bn dn. Cht bn dn l vt cht c in tr sut nm gia tr s in tr sut ca cht dn in v cht in mi khi nhit phng: = 10-4 107 .m Trong k thut in t ch s dng mt s cht bn dn c cu trc n tinh th, quan trng nht l hai nguyn t Gecmani v Silic. Thng thng Gecmani v Silic c dng lm cht chnh, cn cc cht nh Bo, Indi (nhm 3), phtpho, Asen (nhm 5) lm tp cht cho cc vt liu bn dn chnh. c im ca cu trc mng tinh th ny l dn in ca n rt nh khi nhit thp v n s tng theo ly tha vi s tng ca nhit v tng gp bi khi c trn thm tp cht. b. Cht bn dn nguyn tnh. Cht bn dn m mi nt ca mng tinh th ca n ch c nguyn t ca mt loi nguyn t th cht gi l cht bn dn nguyn tnh (hay cht bn dn thun) v c k hiu bng ch s i (Intrinsic). - Ht ti in trong cht bn dn thun: Ht ti in trong cht bn dn l cc in t t do trong vng dn v cc l trng trong vng ha tr Xt cu trc ca tinh th Gecmani hoc Silic biu din trong khng gian hai chiu nh trong hnh (1- 3): Gecmani (Ge) v Silic (Si) u c 4 in t ha tr lp ngoi cng. Trong mng tinh th mi nguyn t Ge (hoc Si) s gp 4 in t ha tr ca mnh vo lin kt cng ha tr vi 4 in t ha tr ca 4 nguyn t k cn sao cho mi nguyn t u c ha tr 4. Ht nhn bn trong ca nguyn t Ge (hoc Si) mang in tch +4. Nh vy cc in t ha tr trong lin kt cng ha tr s c lin kt rt cht ch vi ht nhn. Do vy, mc d c sn 4 in t ha tr nhng tinh th bn dn c dn in thp. nhit 00K, cu trc l tng nh hnh (1- 3) l gn ng v tinh th bn dn nh l mt cht cch in.
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Cu kin in
Ge +4 Ge +4
Ge
+4
Ge
+4
Ge
+4
Ge
+4
Ge +4
Ge
+4
Ge
+4
Hnh 1- 3 : Cu trc tinh th Ge biu din trong khng gian hai chiu Ge L trng Ge +4 +4 Ge Ge
+4
+4 in t t do
Ge
+4
Ge
+4
Ge +4
Ge
+4
Ge
+4
Hnh 1- 4 : Tinh th Gecmani vi lin kt cng ha tr b ph v Tuy nhin, nhit trong phng mt s lin kt cng ha tr b ph v do nhit lm cho cht bn dn c th dn in. Hin tng ny m t trong hnh 1- 4. y, mt s in t bt ra khi lin kt cng ha tr ca mnh v tr thnh in t t do. Nng lng EG cn thit ph v lin kt cng ha tr khong 0,72eV cho Ge v 1,1eV cho Si nhit trong phng. Ch thiu 1 in t trong lin kt cng ha tr c gi l l trng. L trng mang in tch dng v c cng ln vi in tch ca in t. iu quan trng l l trng c th dn in nh in t t do. Trong cht bn dn nguyn tnh, s lng cc l trng ng bng s lng cc in t t do. pi = ni pi - nng ht dn l trng trong bn dn nguyn tnh ni - nng ht dn in t trong bn dn nguyn tnh Tip tc tng nhit th tng i in t - l trng mi s xut hin, ngc li khi c hin tng ti hp s mt i tng i in t- l trng. - dn in ca cht bn dn: Mt dng in qua cht bn dn J s l:
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Cu kin in
J = (n. n + p. p )qE = E n- l nng in t t do (in tch m) p- l nng l trng (in tch dng) - l dn in n - linh ng ca in t p.- linh ng ca l trng Do dn in: = (n n + p p )q Trong :
(1. 9)
(1. 10)
Bng 1. 4 : Cc c tnh ca Ge v Si Cc c tnh Ge Si S nguyn t------------------------------------------32 14 Nguyn t lng--------------------------------------72,6 28,1 3 T trng (g/cm )--------------------------------------5,32 2,33 Hng s in mi-------------------------------------16 12 3 22 S nguyn t/cm ------------------------------------4,4.10 5,0.1022 EG0,eV, 00K (nng lng vng cm)-------------0,785 1,21 0 EG, eV, 300 K -------------------------------------0,72 1,1 0 -3 13 ni 300 K , cm (nng ht dn in t) ------2,5.10 1,5.1010 45 230 in tr sut nguyn tnh 3000K [.cm] ------3800 1300 n , cm2/ V-sec --------------------------------------1800 500 p ,cm2/ V-sec --------------------------------------99 34 Dn , cm2/ sec = n.VT -------------------------------47 13 Dp , cm2/ sec = p.VT ------------------------------Khi tng nhit , mt cc i in t - l trng tng v do dn in tng. Cho nn, nng in t ni ca bn dn nguyn tnh s thay i theo nhit trong quan h:
n i2 = A 0T3e EG 0 / KT
Trong :
20 2
(1. 11)
A0 - l hng s o bng A/(m . K ) EG0 - l rng vng cm 00K n, p v nhiu i lng vt l quan trng ca Gecmani v Silic cho bng (1.4). dn in ca Gecmani hoc Silic c tnh theo cng thc (1-11) s tng xp x 6% hoc 8% khi nhit tng 10C (tng ng).
b. Cht bn dn tp loi N (cht bn dn tp loi cho). Ta thm mt t tp cht l nguyn t thuc nhm 5 ca bng tun hon Menlp (th d Antimon - Sb) vo cht bn dn Gecmani (Ge) hoc Silic (Si) nguyn cht. Cc nguyn t tp cht (Sb) s thay th mt s cc nguyn t ca Ge (hoc Si) trong mng tinh th v n s a 4 in t trong 5 in t ha tr ca mnh tham gia vo lin kt cng ha tr vi 4 nguyn t Ge (hoc Si) bn cnh, cn in t th 5 s tha ra nn lin kt ca n trong mng tinh th l rt yu, xem hnh (1-5) . Mun gii phng in t th 5 ny thnh in t t do ta ch cn cp mt nng lng rt nh khong 0,01eV cho gecmani hoc 0,05eV cho silic. Cc tp cht ha tr 5 c gi l tp cht cho in t (Donor) hay tp cht N.
12
Cu kin in
Ge +4 Ge +4 Ge +4
Ge
+4 e5 +5
Ge
+4
E Vng dn
Sb
Ge
+4
EC ED EV
Ge
+4
Ge
+4
Mc nng lng m in t th 5 chim ng l mc nng lng cho php c hnh thnh khong cch rt nh di di dn v gi l mc cho, xem hnh (1-6). V do , nhit trong phng, hu ht cc in t th 5 ca tp cht cho s nhy ln di dn, nhng trong di ha tr khng xut hin thm l trng. Cc nguyn t tp cht cho in t tr thnh cc ion dng c nh. cht bn dn tp loi N: nng ht dn in t (nn) nhiu hn nhiu nng l trng pn v in t c gi l ht dn a s, l trng c gi l ht dn thiu s. nn >> pn trong : nn - l nng ht dn in t trong bn dn tp loi N pn - l nng ht dn l trng trong bn dn tp loi N
c. Cht bn dn tp loi P (cht bn dn tp loi nhn). Khi ta a mt t tp cht l nguyn t thuc nhm 3 ca bng tun hon Menlp (th d Indi - In) vo cht bn dn nguyn tnh Gecmani (hoc Silic). Nguyn t tp cht s a 3 in t ha tr ca mnh to lin kt cng ha tr vi 3 nguyn t Gecmani (hoc Silic) bn cnh cn mi lin kt th 4 trng. Trng thi ny c m t hnh (1- 7). in t ca mi lin kt gn c th nhy sang hon chnh mi lin kt th 4 cn d. Nguyn t tp cht va nhn thm in t s tr thnh ion m v ngc li nguyn t cht chnh va c 1 in t chuyn i s to ra mt l trng trong di ha tr ca n. Cc tp cht c ha tr 3 c gi l tp cht nhn in t (Acceptor) hay tp cht loi P. Mc nng lng trng ca tp cht trong cht bn dn chnh s to ra mt mc nng lng cho php ring nm bn trn di ha tr gi l mc nhn, (xem hnh 1- 8)
13
Cu kin in
Ge +4 Ge +4 Ge +4
Ge
+4
Ge
+4
E Vng dn
In
+3
Ge
+4
Ge
+4
Ge
+4
Nu tng nng tp cht nhn th nng ca cc l trng tng ln trong di ha tr, nhng nng in t t do trong di dn khng tng. Vy cht bn dn loi ny c l trng l ht dn a s v in t l ht dn thiu s v n c gi l cht bn dn tp loi P. PP >> NP trong : PP - nng ht dn l trng trong bn dn P NP - nng ht dn in t trong bn dn P Kt lun: Qua y ta thy, s pha thm tp cht vo bn dn nguyn tnh khng nhng ch tng dn in, m cn to ra mt cht dn in c bn cht dn in khc hn nhau: trong bn dn tp loi N in t l ht dn in chnh, cn trong bn dn tp loi P, l trng li l ht dn in chnh.
d. Mt in tch trong cht bn dn. Quan h gia nng ht dn in t n v nng ht dn l trng p trong cht bn dn theo cng thc gi l lut khi lng tch cc nh sau: (1. 12) n.p = ni2 Gi ND l nng cc nguyn t cht cho v chng u b ion ha. Do mt tng cc in tch dng s l ND + p. Tng t, NA l nng cc ion nhn v tng mt in tch m s l NA + n. Do tnh trung ha v in trong cht bn dn th mt cc in tch dng bng mt cc in tch m, nn ta c: ND + p = NA + n (1. 13)
Xt mt vt liu bn dn loi N th s c NA = 0. S lng in t trong bn dn N ln hn nhiu so vi s l trng, khi cng thc (1.13) n gin cn: n ND (1. 14) Nh vy, trong bn dn N nng in t t do xp x bng mt cc nguyn t tp cht cho. Do cng thc (1.14) c vit: n n = ND (1. 15) Nng l trng trong bn dn N c vit theo cng thc (1.12) ta c:
14
Cu kin in
n i2 n i2 pn = = n n ND
v nn >> pn Tng t, i vi bn dn tp loi P ta c:
(1. 16)
p p = N A v
v pp >> np
np =
n i2 NA
(1. 17)
e. Dng in trong cht bn dn. Trong cht bn dn c 2 thnh phn dng in l dng in khuch tn v dng in tri. - Dng in khuch tn: S tn ti gradient nng ht dn (dP/dx, dn/dx) s dn n hin tng khuch tn ca cc ht dn t ni c nng cao v ni c nng thp v to ra dng in khuch tn trong cht bn dn. Hin tng khuch tn cc l trng to nn mt dng in l trng JP [ampe/m2] c tnh theo cng thc sau:
J P = q.DP
dP dx
(1. 18)
trong : DP [m2/sec] - l h s khuch tn ca l trng. Tng t, cng thc tnh mt dng in in t khuch tn l:
J n = q.D n
dn dx
(1. 19)
trong : Dn - l h s khuch tn ca in t. C hai hin tng khuch tn v dch chuyn (hin tng tri) u l cc hin tng nhit ng hc thng k, D v khng c lp, chng quan h vi nhau theo cng thc:
DP Dn = = VT P n
Trong
(1. 20)
VT =
KT T = gi l in th nhit. q 11600
Ti nhit phng (3000K) th = 39D. Trong , gi tr D cho silic v gecmani cho bng 1-4. Mt dng in khuch tn l: Jk.t. = Jp + Jn - Dng in tri: Dng in tri l dng chuyn ng ca cc ht dn di tc dng ca in trng : (1. 21) J = .E = q(nn + pp).E
f. c im ca vt liu bn dn quang. Cht bn dn c dng to ngun nh sng hu ht u c vng cm ti hp trc tip. Trong cht bn dn cc in t v l trng c th ti hp trc tip vi nhau qua vng cm m khng cn mt ht th 3 no bo ton xung lng. Ch trong cc vt liu c vng cm trc tip hin tng ti hp bc x mi c hiu sut cao to ra mt mc pht x quang thch hp. Mc d khng c mt n tinh th bn dn no c vng cm ti hp trc tip, nhng
15
Cu kin in
cc hp cht ca cc cht thuc nhm III v nhm V c th cho ta vt liu c vng cm ti hp trc tip. y l cc vt liu c to nn t s lin kt ca cc nguyn t nhm III (nh Al, Ga, hoc In) v cc nguyn t nhm V (nh P, As, hoc Sb). S lin kt ba v bn thnh phn khc nhau ca cc hp cht i ca cc nguyn t ny cng l cc vt liu rt thch hp cho cc ngun nh sng. lm vic ph t 800 900nm, vt liu c s dng thng l hp kim 3 thnh phn AlXGaAs. T l x ca nhm (Al) v galium asenic (GaAs) xc nh rng vng cm ca cht bn dn v, tng ng, xc nh bc sng nh ca pht x bc x nh. iu ny m t trong hnh (1- 9). Gi tr x cho vng hot ng ca vt liu c la chn thng xuyn t c bc sng l 800nm n 850nm. cc bc sng di hn th cht 4 thnh phn In1-XGaXAsYP1-Y l mt trong cc vt liu c bn c s dng. Bng s thay i t lng phn t gam x v y trong vng hot ng, cc it pht quang (LED) c th to ra cng sut nh bc sng bt k gia 1,0 v 1,7m. n gin k hiu GaAlAs v InGaAsP mt cch tng qut khi khng cn ni r gi tr x v y cng nh cc k hiu khc nh AlGaAs; (AlGa)As; (GaAl)As; GaInPAs; v InXGa1-XAsYP1-Y. EG(eV 2,2 2,0 1,8 1,6 1,4 0 0,1 AlXGa1-XAs Trc tip Gin tip (m) 0,6 0,7 0,8 0,9
0,2
0,3 0,4
0,5
T lng Al : x
Hnh 1- 9 : B rng vng cm v bc sng bc x ra l hm ca t lng phn t gam ca Al cho cht AlXGa1-XAs nhit phng.
Cc cht GaAlAs v InGaAsP thng c chn to cht bn dn s dng trong cc linh kin ngun sng v n c th ph hp vi cc tham s mng tinh th ca giao din cu trc d th bng vic s dng mt lin kt chnh xc cc vt liu 2, 3, v 4 thnh phn. Cc yu t ny nh hng trc tip n hiu sut bc x v tui th ca ngun sng. Quan h c hc lng t gia nng lng E v tn s (f):
E = h =
hc
Bc sng pht x nh o bng m c th biu din nh mt hm ca nng lng vng cm EG o bng eV theo cng thc:
16
Cu kin in
(m) =
1.5 VT LIU T
1, 24 EG
(1.22)
1.5.1 nh ngha. Vt liu t l vt liu khi t vo trong mt t trng th n b nhim t. Qu trnh nhim t ca cc vt liu st t di tc dng ca t trng ngoi dn n s tng ngun nhim t v quay cc vect mmen t theo hng ca t trng ngoi 1.5.2 Cc tnh cht c trng cho vt liu t. a. T tr v t thm: Ging nh in tr ca mt dy dn, mch t cng c t tr Rm. T tr l mt i lng nh gi s ngn cn vic lp nn t thng ca mt mch t. T tr c tnh theo cng thc sau:
Rm =
trong :
1 l . S
(1. 23)
l - l di ca mch t S - l tit din ca mch t - l t thm ca vt liu trong mch t S nghch o ca tng ng vi in tr sut trong mch in. Vy 1/ l t tr sut ca 1m3 vt liu t. t thm l s nghch o ca t tr
=
trong :
1 l = R m S Fm
(1. 24)
l t thm ca vt liu t Fm l lc t ng v l t thng. Thay cc gi tr ca Rm v Fm v thay cng thc tnh mt t thng ( cm ng t) B = /S (1. 25) ta c cng thc tnh t thm:
B H
[H / m]
(1. 26)
Vy t thm l t s gia cm ng t B v cng t trng H v c n v o bng Henry/met [H/m], trong H o bng Ampe/met. t thm ca khng gian t do 0:
0 = 4.107
[H / m]
b. t thm tng i (r): S gia tng t thng tng hp l cm ng t B khi cho st hoc thp vo mt mch in c tnh l t thm tng i r v cng thc (1-61) c vit li thnh:
r .0 =
B H
17
(1. 27)
Cu kin in
Tu theo tng loi st hoc thp m r = 400 2500 B (T) 1,8 r 2500 2000 1500 1000 500 1,6 1,4 1,2 1,0 0,8 0,6 0,4 0,2 0 1 2 3 4 5 6 7 8 9 (103 H/A/m) Gang Thp tm Thp l
r (Thp l)
Hnh (1- 10) m t s thay i ca cm ng t B khi cng t trng H thay i trn cc mu l mch st t khp kn v ng cong t thm ca thp l. ng t ha c th c dng xc nh cm ng t B i vi mt gi tr cng t trng cho. T , t thm tng i ca mi mu c th c tnh v v trn th ng t ha ny. ng t nt trong hnh (1-10) m t t thm tng i r ca thp l. t thm tng i khng phi l i lng khng i, n ph thuc vo cng t trng H. i vi thp l t thm cc i t c cng t trng xp x 250A/m.
c. ng cong t ha: c trng cho tnh cht ca vt liu t ta c ng cong t ha B = f (H) biu th mi quan h gia cm ng t B v cng t trng H (xem hnh 1- 11). Khi cm ng t B v cng t trng H trong cun dy thay i vi s gia l B v H th s gia ca t thm B / H s tr nn quan trng.
18
Cu kin in
B b H B a 0 H
H B c
iu cn bit y l ta mun t c mt gi tr t thm ln nht khi cm ng t B cc i vi cng t trng H c th nh nht. Mt quan h quan trng khc l cc gi tr thay i ca B v H trong hnh (1- 11). nghing ca ng cong t ha ti mt im bt k c gi l gia lng t thm . =B/H gia t thm quan trng trong ng dng m yu cu s thay i rt nh ca cng t trng H v s thay i ln ca cm ng t B. Hin tng tr: Hnh (1- 12) ng cong t ha biu th quan h gia cm ng t B v cng t trng H ca vt liu t khi ta t n trong t trng. Nh biu th trong hnh ta c: Bs - cm ng t bo ha Bd - cm ng t d Hc - lc khng t ng cong 0-a-b-c xy ra khi vt liu t ban u l khng b nhim t v cng t trng tng t 0 ln. Khi ta gim cng t trng t Hmax xung n 0 th vt liu t vn cn gi li mt s t thng. cm ng t cn li trong vt liu t nhim t khi cng t trng gim xung n 0 gi l cm ng t d (on o-d): (Bd). gim cm ng t d n 0, ta cn cung cp mt cng t trng m. Cng t trng cn thit (o-e) gim cm ng t d n 0 c gi l lc khng t (HC). Khi tip tc tng gi tr ngc ca cng t trng H, th cm ng t B cng tng theo chiu m n gi tr bo ha, ta c ng cong t ha mi (on e-f). Mt ln na, cng t trng ngc li gim n 0 th cm ng t cng gim n gi tr cm ng t d (on o-g). V gim cm ng t n 0, ta li phi tng cng t trng theo chiu dng n tr s HC (on o-h) v y cng chnh l lc khng t. Tip tc tng cng t trng theo chiu dng ta c on "h-c" ca th. Nh vy, th B/H c dng mt vng khp kn. Vng ny i xng vi ln +Bmax = -Bmax, v +Hmax = -Hmax. Vng t tr chng minh rng, mt t nng lng c hp th vo trong vt liu t
19
Cu kin in
thng lc ma st v lm thay i s sp xp thng hng ca cc omen t. Nng lng ny l nguyn nhn lm nng li cun dy, v n chnh l nng lng lng ph. Din tch ph kn vng t tr t l thun vi nng lng hao ph ny. Hnh (1- 13) biu din 3 vng t tr tiu biu cho 3 loi vt liu st t. +B +Bb. Bd c b
-Hmax
HC e
a 0 g
h +Hmax H (A/m)
Hnh 1- 12 : Vng t tr (Khi cng t trng gim t Hmax n 0, cm ng t cn d li. Nu H i hng th cm ng t d cng i hng).
Vng t tr hnh (1- 13a) l ca st mm. Vng t tr hnh (1- 13b) m t vng t tr tiu biu ca cht thp cng, v din tch ca n ln l nguyn nhn dn n tn tht ca li ln. Tuy nhin, v cm ng t d ca cht thp cng ln nn n rt thun li cho nam chm vnh cu. Vng t tr hnh (1- 13c) l ca Ferit. y l mt li ceramic c lm t oxit st. Vng t tr c hnh dng nh vy s c tn tht tr ln. c tnh cm ng B t ti tr s cm ng t d khng i trong mt hng ny cho php s dng Ferit lm cc b nh t. Dng in xoy trong li st t: Nh ta bit, mt t trng thay i s cm ng mt sc in ng trong mt dy dn t trong t trng . Do vy, mt li st t t trong mt cun dy s cm ng mt sc in ng v to ra mt dng in lu thng trong li st t c gi l dng in xoy. Dng in xoy lm nng li st t v n gi vai tr quan trng trong tng tn tht ca cun dy. hn ch dng in xoy, li st t lm vic vi dng in xoay chiu lun c ch to t cc l mng. B mt ca cc l mng ny c qut vecni hoc mt lp sn cch in mng ln c hai mt tng in tr ca chng i vi dng in xoy. Bng cch ny cc tn tht do dng in xoy khng cn ng k.
20
Cu kin in
+B
+B
+B
Bd
Bd 0 HC 0 0
HC
Hmax
+H
+H
a/
b/
c/
Hnh 1- 13: Hnh dng ca mt s vng t tr ca cc vt liu 1.5.3 Phn loi v ng dng ca vt liu t. Da vo vng t tr ngi ta chia vt liu t lm 2 loi: - Vt liu t mm c t thm cao v lc khng t nh (Hc nh v ln). - Vt liu t cng c t thm nh v lc khng t cao (Hc ln v nh). a. Vt liu t mm: Vt liu t mm dng tn s thp: Vt liu t mm lm vic tn s thp thng c dng rng ri l st, hp kim st silic, st - niken, l thp k thut in... lm li bin p, nam chm in. Hin nay hp kim st t dng rng ri nht l st- silic. St- niken c t thm cao hn. Vt liu st dng trong cc cun dy v bin p thng dng tm mng. Mt cch khc, hp kim st t c to thnh bng cch nung dnh mt hn hp bt km nguyn cht, sau c cn ngui v . Khi cn ngui, nh tc ng sp xp li trc tinh th nn tnh cht t theo hng cn l tt nht v c gi l vt liu t c nh hng. gim tiu hao do cc dng in xoy trong li bin p ngi ta dng vt liu t c in tr sut cao. thay i tnh cht t v in tr sut ca vt liu st t ta phi thay i t l thnh phn hp kim. Cc tnh cht ca vt liu t thng cho di dng cc ng cong t ha v cc ng cong t thm. d t ha ca mt vt liu t c o bng t thm. Vi stsilic c t thm cc i khong 7500H/m, cn st -niken khong 60000H/m. Cc khong tn s lm vic ca cc vt liu t thng dng nh biu din trong hnh (1- 14).
21
Cu kin in
Li st bi (Q cao)
TS.Ni (m tn) TSHD, Ni (cng sut) 5 mile 2 mile 1 mile 1 10 TSHD (m tn, tn tht nh) TSHD, Ni (cng sut, xung) TSHD, Ni (cng sut, xung) 102 103 104 105 106 107 f(Hz)
Vt liu t mm dng tn s cao: (thng tn s vi trm n vi ngn KHz). + Ferit l vt liu t c dng rng ri nht tn s cao. Ferit l vt liu t c t thm cao, tn tht nh. Ferit l hp cht xit st 3 (Fe2O3) kt hp vi cc xit km loi ha tr mt hoc hai (ZnO; Zn2O). Nguyn vt liu sau x l c nghin thnh bt mn, trn li v p nh hnh theo khun thnh dng thanh hay ng, sau c thiu nhit cao trong mi trng thch hp, y l qu trnh gia cng nhit c bit hp cht cho in tr sut cao. Ferit c nhiu loi nhng thng dng nht l Ferit-Mangan- Km v Ferit -Niken- Km. Ferit c c im l in dn sut thp, t thm ban u cao v gi tr cm ng t bo ha thch hp. Ferit c dng trong cc cun dy, c h s phm cht cao, cc bin p c di thng tn rng, cc cun dy trung tn, thanh anten, cc cun lm lch tia in t, cc bin p xung, v.v.. Ferit mangan km (MnZn ferit) c ch to thnh nhiu loi khc nhau tu theo ng dng vi nhng cun dy c h s phm cht cao (Q cao) trong khong tn s t 1 n 500KHz, c loi tn tht nh, c h s nhit ca t thm thp v n nh cao. Dng trong truyn hnh c loi thch hp lm vic vi in cm ng t cao; cng c loi c t thm thch hp vi cc bin p thng tin di rng v cc bin p xung. Ferit niken km (NiZn ferit) cng c nhiu loi c thnh phn oxit niken v oxit km khc nhau, ng thi chng u c in tr sut cao. + Pecmaloi c t thm cao (c th ti hng trm ngn H/m). Pecmaloi l hp kim gm c 50% 80% l Niken, 18% 18,5% l Fe cn li l Mangan, Crm, ng, Silic v cn li l Moliden. Pecmaloi thng c dt mng. Chng thng c dng lm bin p Micr, u t, bin p kch thc nh, cht lng cao. Nhc im ca Pecmaloi rt d v, d bin dng nn
22
Cu kin in
Wd =
Bd .H d 2 W= B.H 2
(1. 28)
nh vy, nng lng bao quanh khng gian cht st t c tnh theo cng thc:
Nam chm trong trng thi khp kn s khng truyn nng lng ra khng gian xung quanh. Khi tn ti 1 khe khng kh gia cc cc th s xut hin s truyn nng lng vo khng gian xung quanh, tr s ca n ph thuc nhiu vo chiu di khe khng kh. Cc c tnh ca nam chm vnh cu l cc i lng: - Lc khng t HC. - cm ng t d Bd. - Nng lng cc i bao quanh khng gian quanh cht st t Wd. - t thm ca vt liu t cng nh hn ca vt liu t mm v vi s tng ca HC th t thm gim. i lng H.B/ 2 t l vi nng lng cc i ca t trng bao quanh cht st t.
1.4.5. Thch anh p in (SiO2) Thch anh l tinh th Si02 t nhin khng mu, trong sut, thng gi l pha l t nhin; hoc thch anh mu (thch anh khi, thch anh tm). Tinh th thch anh p in c th c gia cng bng phng php nhn to, khi cc tnh cht ca n gn ging nh cc tnh cht ca cc tinh th t nhin. Thch anh p in thng c dng lm cc b dao ng thch anh c tn s dao ng rt n nh. B cng hng thch anh: B mt ca cc tm thch anh c mi bng bt mn v trn chng c t cc in cc bng kim loi to ra b cng hng thch anh. K hiu v mch tng ng:
23
Cu kin in
CM
A B
B cng hng thch anh cn c h s nhit tn s thp v khng c to ra cc cng hng k sinh theo c hai hng k t tn s cng hng chnh trong di tn cho ca n. in tch xut hin hiu ng p in c xc nh bng cng thc: (1. 29) Q = dij .F trong : F - l lc gy ra bin dng dij - mdun in tng ng vi loi tinh th.
TM TT NI DUNG Trong chng ny chng ta trnh by nh ngha v cu kin in t mt cch khi qut, a ra mt s cch phn loi cu kin in t thng dng. Thng thng nht ta chia cu kin in t da theo ng dng ca n l cu kin in t th ng v cu kin in t tch cc. Ngoi ra cn phn loi theo lch s pht trin cng ngh ch to ca cc cu kin m chng ta rt quen gi l cu kin in t chn khng, cu kin in t c kh, cu kin in t bn dn, vi mch v cu kin in t nan. Trong chng 1 cng cho chng ta mt khi qut chung cu trc ca mt mch in t v mt h thng in t. T y chng ta c th hnh dung c tm quan trng ca cc cu kin in t v v tr c th s dng chng trong cc thit b in t. Vt liu in t l phn quan trng ca chng 1. Chng ta nghin cu v c tnh vt l in ca cc loi vt liu s dng trong lnh vc in t v c phn ra lm 4 loi theo ng dng ca n. Cht cch in hay cn gi l cht in mi l loi dn in km, in tr sut ca n rt cao ( 10 7 10 17 ) m. Khi s dng cht cch in ta phi ch n cc tnh cht k thut sau: Hng s in mi , biu th kh nng phn cc ca cht in mi; bn v in E.t. biu th kh nng chu c in p cao ca cht in mi; tn hao in mi P (hay gc tn hao in mi tg) biu th chi ph nng lng in v ch ca cht in mi khi c dng in chy qua. Tu theo mc ch s dng m chng ta ch n cc tnh cht c trng ny mt cch ti u la chn vt liu thch hp. Trong s dng, cht cch in c chia lm 2 loi chnh l vt liu cch in th ng v cht cch in tch cc. Cht cch in th ng thng dng lm vt liu cch in v lm t in. Cn cht cch in tch cc c mt s c tnh c-in c bit nh bin c nng thnh in nng (gm xt nht, mui xt nht), tnh p in ( mui xt nht, gm xt nht, thch anh p in) hoc lectret (ci chm in)... Cht dn in l vt liu dn in tt, thng thng th rn chng l kim loi v hp kim, cn th lng chng l cc kim loi nng chy v dung dch in phn. Khi s dng cht
24
Cu kin in
dn in chng ta phi ch n cc tnh cht sau ca n: in dn sut hay in tr sut ( = 1/); H s nhit ca in tr sut (); Nhit dn sut (); Hiu in th tip xc v Gii hn bn khi ko. Trong s dng, cht dn in c chia lm 2 loi: cht dn in c in tr sut thp, thng dng lm dy dn in nh ng nguyn cht, nhm nguyn cht v cht dn in c in tr sut cao thng c dng lm cc in tr, cc si nung nng...Tu theo mc ch s dng m chng ta la chn cc vt liu c tnh cht thch hp. Cht bn dn l vt liu m in tr sut ca n c gi tr gia gi tr ca cht cch in v cht dn in. Trong k thut in t ngi ta ch s dng cc cht bn dn c cu trc mng tinh th, quan trng l 2 cht silic v gecmani. c tnh dn in quan trng ca cht bn dn l dn in ca n ph thuc rt nhiu vo nhit v nng tp cht c trong n. Cht bn dn c chia lm 3 loi chnh: cht bn dn thun (nguyn tnh), cht bn dn tp loi N v cht bn dn tp loi P. Cht bn dn nguyn tnh c nng ht ti in in t v ht ti in l trng bng nhau (pi = ni); cht bn dn tp loi P c ht ti in a s l l trng, ht ti in in t l thiu s (pp >> np); cht bn dn tp loi N c ht ti in a s l in t, ht ti in thiu s l l trng (nn >> pn). Cht bn dn quang l vt liu bn dn c cu trc in t c bit c th bc x quang t qu trnh ti hp ca cc ht dn (bin i in sang quang) hoc hp th quang to ra cc ht dn in (bin i quang sang in). Vt liu t l vt liu c kh nng nhim t khi t trong t trng. Khi s dng vt liu t chng ta phi ch cc tnh cht t tnh sau: t thm tng i (r), T tr (RM) v Tn hao t tr. Ngoi ra chng ta cn quan tm n tnh cht ca ng cong t ho v vng t tr ca vt liu t. Ngi ta thng chia vt liu t ra lm 3 loi: Vt liu t mm, vt liu t cng v vt liu t c cng dng c bit. Vt liu t mm c t thm cao, lc khng t v tn hao t tr nh. Vt liu t cng l loi c t thm thp, lc khng t cao. Vt liu t c cng dng c bit.
CU HI N TP
1. Hy cho bit mt s cch phn loi cu kin in t thng thng? 2. Hy cho bit cc tnh cht vt l-in c bn ca cht cch in? 3. Em hy cho bit thng thng cht cch in c chia lm my loi? L nhng loi no v phm vi s dng chnh ca tng loi? 4. Hy cho bit cc tnh cht vt l-in c bn ca cht dn in? 5. Da vo tnh dn in, cht dn in c phn chia thnh my loi? L nhng loi no? Cho v d v nu ng dng ca chng? 6. Hy cho bit nhng yu t no nh hng chnh n dn in ca cht bn dn? 7. Ti sao trong cht bn dn thun, nng ht ti in in t v ht ti in l trng li bng nhau? 8. Th no l cht bn dn tp loi N? c im dn in ca n l g? 9. Th no l cht bn dn tp loi P? c im dn in ca n l g? 10. Cht bn dn quang in t c c im g khc vi cht bn dn thng thng? 11. Nu nhng tnh cht c bn ca vt liu t? 12. Hy cho bit vt liu t c phn chia thnh my loi? Cho v d ng dng ca tng loi? 13. Cho mt ming bn dn Silic c pha thm photpho nng 1015 / cm 3 . Hy tnh nng
25
Cu kin in
ht dn trong ming bn dn ti nhit 300 0 K . 14. Hy cho bit nhng tnh cht c bit ca thch anh p in v ng dng ca n? 15. Da vo cu trc vng nng lng ca vt cht, cht bn dn c rng vng cm l: a. EG > 2eV b. 0eV < EG < 2eV c. EG = 0eV d. 3eV < EG < 6eV 16. Hy in vo ch trng ca mnh mt trong nhng nhm t di y: bn v in ca cht in mi l gi tr ..ngoi t ln cht in mi m lm cho n mt kh nng cch in. a. dng in; b. in p; c. cng sut in; d. cng in trng 17. t thm tng i ca vt liu t r l mt i lng. a. khng thay i. b. thay i theo cng t trng H. c. thay i theo tn s lm vic. d. thay i theo iu kin mi trng nh nhit , nh sng, m
TI LIU THAM KHO
1. Gio trnh Cu kin in t v quang in t ca Trn Th Cm, Hc vin Cng ngh BCVT, nm 2002. 2. Vt liu k thut in, ca Nguyn nh Thng, nh xut bn KHKT H Ni, nm 2005.
26
Cu kin in t
Cu kin in t th ng
CHNG 2 CC CU KIN IN T TH NG GII THIU CHNG Chng 2 gii thiu v cc cu kin in t th ng. l cu kin in tr, t in, cun cm v bin p. y l cc cu kin khng th thiu c trong cc mch in. Chng lun gi mt vai tr rt quan trng trong hu ht cc mch in. Cc cu kin ny c trnh by mt cch c th t nh ngha, cu to, k hiu trong cc s mch, cc cch phn loi thng dng, cc tham s c bn v cc cch nhn bit chng trn thc t. Ngoi ra, chng 2 cn cho bit c tnh ca mt s cu kin in t th ng c bit, s dng trong cc lnh vc khc nhau. NI DUNG 2.1 IN TR 2.1.1. nh ngha v k hiu ca in tr a. nh ngha: in tr l cu kin dng lm phn t ngn cn dng in trong mch. Tr s in tr c xc nh theo nh lut m: U [] R= ( 2. 1) I Trong : U hiu in th trn in tr [V] I - dng in chy qua in tr [A] R - in tr [] Trn in tr, dng in v in p lun cng pha v in tr dn dng in mt chiu v xoay chiu nh nhau. b. K hiu ca in tr trn cc s mch in Trong cc s mch in, in tr thng c m t theo cc qui c tiu chun nh trong hnh 2-1. R12 R159
in tr thng 0,25W 1W
27
Cu kin in t
Cu kin in t th ng
Cu trc ca in tr c nhiu dng khc nhau. Mt cch tng qut ta c cu trc tiu biu ca mt in tr nh m t trong hnh 2-2.
M chp v chn in tr
V bc
Li
Vt liu cn in
2.1.2. Cc tham s k thut c trng ca in tr a. Tr s in tr v dung sai + Tr s ca in tr l tham s c bn v c tnh theo cng thc: l ( 2. 2) R= S Trong : - l in tr sut ca vt liu dy dn cn in l- l chiu di dy dn S - l tit din ca dy dn
+ Dung sai hay sai s ca in tr biu th mc chnh lch gia tr s thc t ca in tr so vi tr s danh nh v c tnh theo %. Dung sai c tnh theo cng thc:
R t . t R d .d 100% R d .d
R t . t Tr s thc t ca in tr R d .d Tr s danh nh ca in tr
Da vo % dung sai, ta chia in tr 5 cp chnh xc: Cp 005: c sai s 0,5 % Cp 01: c sai s 1 % Cp I: c sai s 5 % Cp II: c sai s 10 % Cp III: c sai s 20 % b. Cng sut tiu tn danh nh: (Pt.tmax) Cng sut tiu tn danh nh cho php ca in tr Pt.t.max l cng sut in cao nht m in tr c th chu ng c trong iu kin bnh thng, lm vic trong mt thi gian di khng b hng. Nu qu mc in tr s nng chy v khng dng c. Pt.t.max = RI2max =
U2 max R
[W]
(2.3)
28
Cu kin in t
Cu kin in t th ng
H s nhit ca in tr biu th s thay i tr s ca in tr theo nhit mi trng v c tnh theo cng thc sau: 1 R .106 [ppm/ 0C] (2.4) TCR = . R T Trong : R- l tr s ca in tr R- l lng thay i ca tr s in tr khi nhit thay i mt lng l T. TCR l tr s bin i tng i tnh theo phn triu ca in tr trn 1C (vit tt l ppm/C). Lu : in tr than lm vic n nh nht nhit 200C. Khi nhit tng ln hn 200C hoc gim nh hn 200C th in tr than u tng tr s ca n.
2.1.3. Cch ghi v c cc tham s trn thn in tr
Trn thn in tr thng ghi cc tham s c trng cho in tr nh: tr s ca in tr v % dung sai, cng sut tiu tn (thng t vi phn mi Watt tr ln). Ngi ta c th ghi trc tip hoc ghi theo nhiu qui c khc nhau. a. Cch ghi trc tip: Cch ghi trc tip l cch ghi y cc tham s chnh v n v o ca chng. Cch ghi ny thng dng i vi cc in tr c kch thc tng i ln nh in tr dy qun. b. Ghi theo qui c Cch ghi theo quy c c rt nhiu cc quy c khc nhau. y ta xem xt mt s cch quy c thng dng: + Khng ghi n v m: y l cch ghi n gin nht v n c qui c nh sau: R (hoc E) = M = M K = K + Quy c theo m: M ny gm cc ch s v mt ch ci ch % dung sai. Trong cc ch s th ch s cui cng ch s s 0 cn thm vo. Cc ch ci ch % dung sai qui c gm: F = 1 %, G = 2 %, J = 5 %, K = 10 %, M = 20 %. + Quy c mu: Thng thng ngi ta s dng 4 vng mu, i khi dng 5 vng mu (i vi loi c dung sai nh khong 1%). Loi 4 vng mu c qui c: - Hai vng mu u tin l ch s c ngha thc ca n - Vng mu th 3 l ch s s 0 cn thm vo (hay gi l s nhn). - Vng mu th 4 ch phn trm dung sai (%). Loi 5 vch mu c qui c: - Ba vng mu u ch cc s c ngha thc - Vng mu th t l s nhn ch s s 0 cn thm vo - Vng mu th 5 ch % dung sai.
29
Cu kin in t
Cu kin in t th ng
Vch mu th 2 n v 0 1 2 3 4 5 6 7 8 9 -
Vch mu th 3 S nhn 1 10 100 1000 10000 100000 1000000 10000000 100000000 1000000000 0,1 0,01 -
5% 10% 20%
1 2 3 4
Hnh 2-3: Th t vng mu
2.1.4. Phn loi v ng dng ca in tr a. Phn loi: Phn loi in tr c rt nhiu cch. Thng dng nht l phn chia in tr thnh hai loi: in tr c tr s c nh v in tr c tr s thay i c (hay bin tr). Trong mi loi ny li c phn chia theo cc ch tiu khc nhau thnh cc loi nh hn nh sau: in tr c tr s c nh. in tr c tr s c nh thng c phn loi theo vt liu cn in nh: + in tr than tng hp (than nn) + in tr than nhit gii hoc than mng (mng than tinh th). + in tr dy qun gm si dy in tr di (dy NiCr hoc manganin, constantan) qun trn 1 ng gm ceramic v ph bn ngoi l mt lp s bo v. + in tr mng kim, in tr mng oxit kim loi hoc in tr ming: in tr ming thuc thnh phn vi in t. Dng in tr ming thng dng l c in lun trn tm rp mch. + in tr cermet (gm kim loi). Da vo ng dng in tr c phn loi nh lit k trong bng 2.2.
30
Cu kin in t
Cu kin in t th ng
Bng 2.2: Cc c tnh chnh ca in tr c nh tiu biu Loi in tr Chnh xc Dy qun Mng kim Bn chnh xc Oxyt kim loi Cermet Than mng a dng Than tng hp Cng sut Dy qun Hnh ng Bt sn my Chnh xc Mng kim loi in tr ming (mng vi in t) Tr s R Pt.t.max [w] t0lmvic 0 C TCR ppm/0C
0,1 1,2M 10 5M 10 1,5M 10 1,5M 10 5M 2,7 100M 0,1 180K 1,0 3,8K 0,1 40K 20 2M
1/8 3/4 1250C 1/20 1/2 1250C 1/4 2 700C 1/201/2 1250C 1/8 1 700C 1/8 2 700C 1 21 250C 5 30 250C 1 10 250C 7 1000 250C
-55+145 -55+125 -55+150 -55+175 -55+165 -55+130 -55+275 -55+275 -55+275 -55+225
1 22M
-55+125
25n 200
in tr dy qun chnh xc
in tr mng
in tr oxit im loi
Hnh 2-4: Mt s hnh dng bn ngoi ca mt s in tr c nh in tr c tr s thay i (hay cn gi l bin tr) Bin tr c hai dng. Dng kim sot dng cng sut ln dng dy qun. Loi ny t gp trong cc mch in tr. Dng thng dng hn l chit p. Cu to ca bin tr so vi in tr c nh ch yu l c thm mt kt cu con chy gn vi mt trc xoay iu chnh tr s
31
Cu kin in t
Cu kin in t th ng
in tr. Con chy c kt cu kiu xoay (chit p xoay) hoc theo kiu trt (chit p trt). Chit p c 3 u ra, u gia ng vi con trt cn hai u ng vi hai u ca in tr.
Con trt
Theo ng dng c th chia chit p thnh 3 loi chnh: loi a dng, loi chnh xc v loi iu chun. Ngoi cc c tnh tng t nh ca in tr c nh, chit p cn c cc tham s ring, trong c bn l lut in tr. Lut in tr cho bit tr s ca in tr thay i th no khi ta thay i gc xoay ca con chy (hnh 2-7). 100% R 2 1 3 ng 1: tuyn tnh ng 2: logarit - iu chnh m sc ng 3: hm m - iu chnh m lng
100%
Hnh 2.7: Ba lut in tr thng dng ca chit p b. ng dng: ng dng ca in tr rt a dng: gii hn dng in, to st p, dng phn cc, lm gnh mch, chia p, nh hng s thi gian, v.v.. c. Mt s in tr c bit in tr nhit: Tecmixto y l mt linh kin bn dn c tr s in tr thay i theo nhit . Khi nhit bnh thng th tecmixto l mt in tr, nu nhit cng tng cao th in tr ca n cng gim.
32
Cu kin in t
Cu kin in t th ng
H s nhit TCR ca in tr nhit tecmixto c gi tr m ln. in tr nhit thng c dng n nh nhit cho cc mch ca thit b in t, o v iu chnh nhit trong cc cm bin.
t0
Tecmixto
Hnh 2-8: K hiu ca tecmixto trn s mch
VDR
Hnh 2-9: K hiu ca varixto trong s mch
in p danh nh l c tnh c bn ca varixto trong dng in qua varixto c tr s danh nh. ng dng: Varixto dng chia p trn cc li iu khin n nh in p. ng thi, n cn c mc song song vi cc cun ra ca bin p qut dng, qut mnh n nh in p trn cc cun li tia in t. in tr Mgm: c tr s in tr t 108 1015 (khong t 100 M n 1000000 G). in tr Mgm c dng trong cc thit b o th, trong mch t bo quang in. in tr cao p: L in tr chu c in p cao t 5 KV n 20 KV. in tr cao p c tr s t 2000 1000 M, cng sut tiu tn cho php t 5 W n 20 W. in tr cao p thng dng lm gnh cc mch cao p, cc b chia p. in tr chun: L cc in tr dng vt liu dy qun c bit c n nh cao. Th d, cc vt liu c s thay i gi tr in tr khong 10 ppm/nm, TCR = 4 ppm/0C.
33
Cu kin in t
Cu kin in t th ng
b. Sp xp cc in tr bn trong RN
Hnh 2-11: Cu trc ca mng in tr 2.2 T IN 2.2.1. nh ngha v k hiu ca t in a. nh ngha: T in l dng c dng cha in tch. Mt t in l tng c in tch bn cc t l thun vi hiu in th t ngang qua n theo cng thc: Q = C . U [culng] (2. 5) trong : Q - in tch trn bn cc ca t in [C] U hiu in th t trn t in[v] C - in dung ca t in[F]
C=
Q 0 .S = U d
+ T thng
Hnh 2-12: Cc k hiu ca t in c. Cu to ca t in: Cu to ca t in bao gm mt lp vt liu cch in nm gia hai bn cc l 2 tm kim loi c din tch S.
Bn cc Chn t Cht in mi
Hnh 2-13: Cu to ca t in 2.2.2. Cc tham s c bn ca t in
V bc
34
Cu kin in t
Cu kin in t th ng
a. Tr s dung lng v dung sai: + Tr s dung lng (C): Tr s dung lng t l vi t s gia din tch hu dng ca bn cc S vi khong cch gia 2 bn cc. Dung lng c tnh theo cng thc:
C=
r 0S d
[F]
(2.6)
Trong : r - hng s in mi ca cht in mi 0 - hng s in mi ca khng kh hay chn khng S - din tch hu dng ca bn cc [m2] d - khong cch gia 2 bn cc [m] C - dung lng ca t in [F] n v o dung lng theo h SI l Farad [F], thng thng ta ch dng cc c s ca Farad. + Dung sai ca t in: y l tham s ch chnh xc ca tr s dung lng thc t so vi tr s danh nh ca n. Dung sai ca t in c tnh theo cng thc :
C t . t C d .d .100% C d .d
(2. 7)
Dung sai ca in dung c tnh theo %. Dung sai t 5% n 20% l bnh thng cho hu ht cc t in c tr s nh, nhng cc t in chnh xc th dung sai phi nh (Cp 01: 1%, Cp 02: 2%). b. in p lm vic: in p cc i c th cung cp cho t in thng th hin trong thut ng "in p lm vic mt chiu". Mi mt t in ch c mt in p lm vic nht nh, nu qu in p ny lp cch in s b nh thng v lm hng t. c. H s nhit: nh gi s thay i ca tr s in dung khi nhit thay i ngi ta dng h s nhit TCC v tnh theo cng thc sau:
TCC =
Trong :
1 C 6 .10 C T
[ppm/0C]
(2. 8)
C - l lng tng gim ca in dung khi nhit thay i mt lng l T. C - l tr s in dung ca t in. TCC thng tnh bng n v phn triu trn 1C (vit tt ppm/C) v n nh gi s thay i cc i ca tr s in dung theo nhit .
2.2.3. T in cao tn v mch tng ng: S mch tng ng ca t in c m t hnh 2-14. Trong s : L - l in cm ca u ni, dy dn ( tn s thp L 0) RS - l in tr ca u ni, dy dn v bn cc (RS thng rt nh) RP - l in tr r ca cht cch in v v bc. RL, RS - l in tr r ca cht cch in C - l t in l tng
RP L RS C
RL
35
C
RS
Cu kin in t
Cu kin in t th ng
Trong hnh "a" cho t bnh thng; hnh "b" cho t c in tr r ln v hnh "c" cho t c in tr r thp. Hnh 2-14 c l s tng ng ca t in tn s cao. Khi t lm vic tn s cao ta phi ch n tn hao cng sut trong t c th hin qua h s tn hao DF:
DF =
RS .100% XC
(2. 9)
Trong : RS - l tr s hiu dng ni tip ca t in (in tr bn cc, dy dn...) XC - l dung khng ca t in DF cng nh th t in cng t mt mt, tc l phm cht cng cao. Khi lm vic tn s cao cn t c phm cht cao. H s phm cht ca t in c tnh:
Q=
1 DF
(2. 10)
i vi cc t in lm vic tn s cao th tn hao in mi s tng t l vi bnh phng ca tn s: Pa = U22C2R (2. 11) Do , trn thc t cc t in lm vic tn s cao cn phi c in tr ca cc bn cc, dy dn v tip gip nh nn cc chi tit ny thng c trng bc.
Cc cch ghi v c tham s trn thn t in Hai tham s quan trng nht thng c ghi trn thn t in l tr s in dung (km theo dung sai sn xut) v in p lm vic. a. Cch ghi trc tip: Ghi trc tip l cch ghi y cc tham s v n v o ca chng. Cch ny ch dng cho cc loi t in c kch thc ln. b. Cch ghi gin tip theo qui c: Cch ghi gin tip l cch ghi theo quy c. T in c tham s ghi theo qui c thng c kch thc nh v in dung ghi theo n v pF. C rt nhiu cc qui c khc nhau nh quy c m, quy c mu, v.v.. Sau y ta ch nu mt s quy c thng dng: + Ghi theo qui c s: Cch ghi ny thng gp cc t Plystylen. V d 1: Trn thn t c ghi 47/ 630: c ngha t s l gi tr in dung tnh bng pF, tc l 47 pF, mu s l in p lm vic mt chiu, tc l 630 Vdc. + Quy c theo m: Ging nh in tr, m gm cc ch s ch tr s in dung v ch ci ch % dung sai. T gm c kch thc nh thng c ghi theo qui c sau: v d trn t ghi l 204 c ngha l tr s ca in dung 20.0000 pF Vdc. 2.2.3
36
Cu kin in t
Cu kin in t th ng
T Tantan l t in gii cng thng c ghi theo n v F cng in p lm vic v cc tnh r rng. + Ghi theo quy c mu: T in cng ging nh in tr c ghi theo qui c mu. Qui c mu cng c nhiu loi: c loi 4 vch mu, loi 5 vch mu. Nhn chung cc vch mu qui c gn ging nh in tr. TCC 1 2 3 4 T hnh ng 1 2 3 4 5 T hnh ko
Hnh 2-15: M mu ca t in Bng 2.3: Bng qui c m mu trn t in
1 3 2 4 + T Tantan
Vch 1 S c ngha 0 1 2 3 4 5 6 7 8 9 -
Vch 2 S c ngha 0 1 2 3 4 5 6 7 8 9 -
Vch 3 S nhn (PF) Tantan(F) 1 1 10 10 100 100 1K 10K 100K 0,01 0,01 0,1 0,1 -
Vch 4 Vch 4 UDC (V) Dung sai T Tantan 10PF >10PF 2PF 20% 10 100 0,1PF 1% 250 2% 400 6,3 16 630 20 25 3 35 0,5PF 0.25PF 1PF 2,5% 5% 10%
37
Cu kin in t
Cu kin in t th ng
C nhiu cch phn loi t in, thng thng ngi ta phn t in lm 2 loi l: T in c tr s in dung c nh T in c tr s in dung thay i c. a. T in c tr s in dung c nh: T in c tr s in dung c nh thng c gi tn theo vt liu cht in mi v cng dng ca chng nh trong bng 2.4.
Bng 2.4: Bng phn loi t in da theo vt liu v cng dng.
Loi t + Chnh xc: . Mi ca . Thu tinh . Gm . Mng Polystylen + Bn chnh xc: . Mng cht do . Mng cht do- giy (trng kim loi) + a dng: . Gm Li- K . Ta2O3 (nung dnh, cht in gii rn c cc tnh) . Mng dnh t c cc . Al2O3 kh, c cc tnh + Trit - nui .Giy . Mi ca (hnh khuy) . Gm + Thot .Giy
in dung
U lm vic (Vdc) 100 2500 300 500 150 500 200 600 30 1000 50 400
t0 lm vic
-55 125 -55 125 -55 85 -55 85 -55 125 -55 125
10 100000 PF 1 580 PF 5,6PF 560 F 150PF 120000 F 10000 PF 3 F 5 2400 PF 100 1500 PF 10000 35000 PF
50 200 10 300 4 85 5 450 100 600 500 500 1500 100 500
-55 125 -55 125 -55 125 -40 85 -55 125 -55 125 -55 125 -55 85
+ T in gii nhm: (Thng gi l t ha) Tnh cht quan trng nht ca t in gii nhm l chng c tr s in dung rt ln trong mt "hp" nh. Gi tr tiu chun ca cc t ha nm trong khong t 1 F n 100000 F. Cc t in gii nhm thng dng thng lm vic vi in p mt chiu ln hn 400 Vdc, trong trng hp ny, in dung khng qu 100 F. Ngoi in p lm vic thp v phn cc th t in gii nhm cn mt nhc im na l dng r tng i ln. + T tantan: (cht in gii Tantan) y l mt loi t in gii. T tantan, cng ging nh t in gii nhm, thng c mt gi tr in dung ln trong mt khi lng nh. . Ging nh cc t in gii khc, t tantan cng phi c u ng cc tnh. T tantan cng c ghi theo qui c 4 vng mu.
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b. T in c tr s in dung thay i T in c tr s in dung thay i c l loi t trong qu trnh lm vic ta c th iu chnh thay i tr s in dung ca chng. T c tr s in dung thay i c c nhiu loi, thng dng nht l loi a dng v loi iu chun. Loi a dng cn gi l t xoay: T xoay c dng lm t iu chnh thu sng trong cc my thu thanh, v.v.. T xoay c th c 1 ngn hoc nhiu ngn. Mi ngn c cc l ng xen k, i nhau vi cc l tnh, ch to t nhm. Cht in mi c th l khng kh, mi ca, mng cht do, gm, v.v.. T vi iu chnh (thng gi tt l Trimcap) Loi t ny c nhiu kiu. Cht in mi cng dng nhiu loi nh khng kh, mng cht do, thu tinh hnh ng... thay i tr s in dung ta dng tuc-n-vit thay i v tr gia hai l ng v l tnh
+
T giy
103
T gm + T ha + 22UF + T tantan
T mica
T xoay T du
Trimcap
Hnh 2 -16: Mt s t in thng gp c. ng dng: + T in c dng to phn t dung khng trong mch. Dung khng Xc c tnh theo cng thc:
Xc =
Trong :
1 1 = 2fC C
[]
(2. 12)
f - l tn s ca dng in (Hz)
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C - l tr s in dung ca t in (F) + Do t khng cho dng in mt chiu qua nhng li dn dng in xoay chiu nn t thng dng cho qua tn hiu xoay chiu ng thi vn ngn cch c dng mt chiu gia mch ny vi mch khc, gi l t lin lc. + T dng trit b tn hiu khng cn thit t mt im trn mch xung t gi l t thot. + T dng lm phn t dung khng trong cc mch cng hng LC gi l t cng hng. + T dng trong mch lc gi l t lc. + Do c tnh np in v phng in, t dng to mch nh gi, mch pht sng rng ca, mch vi phn v tch phn
2.3. CUN CM (hay CUN DY)
2.3.1. nh ngha v k hiu ca cun cm. a. nh ngha: Cun dy, cn gi l cun t cm, l cu kin in t dng to thnh phn cm khng trong mch. Cm khng ca cun dy c xc nh theo cng thc: (2. 13) XL = 2 f L = L () Trong : L in cm ca cun dy (o bng Henry), ph thuc vo hnh dng, s vng dy, cch sp xp, v cch qun dy. f - tn s ca dng in chy qua cun dy (Hz) Cc cun dy c cu trc c gi tr cm ng xc nh. Ngay c mt on dy dn ngn nht cng c s cm ng. Nh vy, cun dy cho qua dng in mt chiu v ngn cn dng in xoay chiu. ng thi, trn cun dy dng in v in p lch pha nhau 900. Cun dy gm nhng vng dy dn in qun trn mt ct bng cht cch in, c li hoc khng c li ty theo tn s lm vic. b. K hiu cc cun cm trong s mch in: Trong cc mch in, cun cm c k hiu bng ch ci L.
L a- Cun dy li Ferit
L b- Cun dy li st t
L c- Cun dy khng li
Hnh 2- 17: K hiu cun dy trong s mch 2.3.2. Cc tham s ca cun cm. a. in cm ca cun dy (L): in cm ca cun dy c tnh theo cng thc (2.14):
L = r . 0 .N 2 .
Trong :
S l
(2. 14)
S - l tit din ca cun dy (m2) N - l s vng dy l - l chiu di ca cun dy (m) r , 0 - l t thm ca vt liu li st t v ca khng kh (H/ m)
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Qua biu thc (2.14) ta thy cm ng ln nht khi c cun dy ngn vi tit din ln v c s vng dy ln. b. H s phm cht ca cun cm (Q): Mt cun cm thc khi c dng in chy qua lun c tn tht, l cng sut in tn hao lm nng cun dy. Cc tn tht ny c biu th bi mt in tr RS ni tip vi cm khng XL ca cun dy. H s phm cht Q ca cun dy l t s ca cm khng XL trn in tr RS ny. Tr s Q cng cao th tn tht cng nh v ngc li.
Q=
XL RS
L XL RS
(2.15)
Hnh 2 -18: S mch tng ng ca cun dy khi xt n tn tht 2.3.3. Cun cm cao tn s v s mch tng ng. Cun dy thc cn c tn s lm vic b gii hn bi in dung ring ca n. tn s thp, in dung ny c b qua v dung khng ca n rt ln. Nhng tn s cao th cun dy tr thnh mt mch cng hng song song. Tn s cng hng ca mch cng hng song song ny gi l tn s cng hng ring ca cun dy f0 . Nu cun dy lm vic tn s cao hn tn s cng hng ring ny th cun dy mang dung tnh nhiu hn. Do tn s lm vic cao nht ca cun dy phi thp hn tn s cng hng ring ca n.
f0 =
1 2 LC
[Hz]
(2.16)
Trong : L - l in cm ca cun dy [H] C - l in dung ring ca cun dy [F] Tn s lm vic cao nht ca cun dy phi nh hn tn s f0 ny. fmax < f0
2.3.4. Phn loi v ng dng ca cun cm. Da theo ng dng m cun cm c mt s loi sau: - Cun cng hng l cc cun dy dng trong cc mch cng hng LC.
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Cun lc l cc cun dy dng trong cc b lc mt chiu. Cun chn dng ngn cn dng cao tn, v.v.. Da vo loi li ca cun dy, c th chia cc cun dy ra mt s loi sau. Chng ta s xem xt c th tng loi mt: a. Cun dy li khng kh hay cun dy khng c li: Cun dy li khng kh c nhiu ng dng, thng gp nht l cc cun cng hng lm vic tn s cao v siu cao. Cc yu cu chnh ca cun dy khng li l: - in cm phi n nh tn s lm vic. - H s phm cht cao tn s lm vic. - in dung ring nh. - H s nhit ca in cm thp. - Kch thc v gi thnh phi hp l. c n nh cao, cun dy thng c qun trn mt ng ct bn chc bng ba hoc s. gim in dung ring c th chia cun dy thnh nhiu cun nh ni tip. Dy ng ni chung c dng n tn s khong 50 MHz. tn s cao hn, cun dy thng c thay bng ng ng hoc di ng t (thng c m bc c in dn xut b mt cao) trnh tn tht trong ng qun. Cc cun dy thng c tm dung dch paraphin chng m, tng bn c hc, nht l i vi cc cun dy dng si nh chp li hoc cun dy qun theo kiu "t ong". tn s Radio, cc cun y thng c bc kim (t trong v nhm...) trnh cc nhiu in t khng mong mun. Mun tng in cm ca cun dy m khng cn tng s vng dy, ngi ta dng cc li st t b. Cun dy li st bi: Cun dy li st bi thng c dng tn s cao v trung tn. Cun dy li st bi c tn tht thp, c bit l tn tht do dng in xoy ngc, v t thm thp hn nhiu so vi loi li st. c. Cun dy li Ferit: Cun dy li Ferit l cc cun dy lm vic tn s cao v trung tn. Li Ferit c nhiu hnh dng khc nhau nh: thanh, ng, hnh ch E, ch C, hnh xuyn, hnh ni, ht u,v.v.. Trong hnh (2-20) m t mt s loi cun dy cao tn v trung tn. Li trong cun dy c th c ch to iu chnh i vo hoc i ra khi cun dy. Nh vy in cm ca cun dy s thay i. Tu thuc vo dy ca si dy s dng v vo kch thc vt l ca cun dy, dng in cc i c th khong t 50 mA n 1 A.
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Hnh 2 -20: Mt s loi cun dy cao tn d. Cun dy li st t: Li ca cun dy thng l st - silic v st silic ht nh hng, hoc st- niken tu theo mc ch ng dng. y l cc cun dy lm vic tn s thp. Dy qun l dy ng c trng men cch in, qun thnh nhiu lp c cch in gia cc lp v c tm chng m sau khi qun. Cc cun chn tn s thp c dng ch yu lc b in p gn cho ngun cung cp mt chiu qua chnh lu, lm ti ant trong cc tng khuch i dng n in t ghp LC, v trong cc ng dng mt chiu khc. Gi tr cm ng ca cc cun dy ny nm trong khong t 50 mH n 20 H vi dng in mt chiu n 10 A v in p cch in n 1000 V.
Kp bng nhm
Li st t
Cun dy
K hiu ca li Ferit v cc cun dy: K hiu ca li v ca cc cun dy c qui nh theo tng nc sn xut. Qui c vng mu cho cc cun dy kch thc nh. Nhn chung qui c mu ging nh in tr 1,2,3,4
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Qui c: - Vng mu th 1: ch s c ngha th nht hoc chm thp phn - Vng mu th 2: ch s c ngha th hai hoc chm thp phn - Vng mu th 3: ch s 0 cn thm vo - Vng mu th 4: ch dung sai %. Trong trng hp ny, n v o ca in cm l H. Th t cc vng mu ngc vi in tr. Bng 2.5: M t k hiu mu cho cc cun dy Gi tr ca cc s Dung sai 0 1 2 3 4 5 6 7 8 9 10% Chm thp phn 5% 20%
Mu en Nu Cam Vng Xanh l cy Xanh lam Tm Xm Trng Bch kim Vng kim Khng vch mu
2.4. BIN P
2.4.1. nh ngha v k hiu trong s mch. a. nh ngha: Bin p l thit b gm hai hay nhiu cun dy ghp h cm vi nhau bin i in p. Cun dy u vo ngun in gi l cun s cp, cc cun dy khc u vo ti tiu th nng lng in gi l cun th cp.
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a. Bin p m tn
d. Bin p li Ferit
e. Bin p trung tn
Hnh 2 -24: Cc k hiu ca bin p trong s mch in 2.4.2. Cc tham s k thut ca bin p. a. H s ghp bin p K: S lng t thng lin kt t cun s cp sang cun th cp c nh ngha bng h s ghp bin p K:
K=
T thng lin kt gia hai cun s cp v cun th Tng s t thng sinh ra do cun s cp
Thng thng h s ghp bin p c tnh theo cng thc: M (2. 17) K = L1 L 2
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Trong :
M - h s h cm ca bin p L1 v L2 - h s t cm ca cun s cp v cun th cp tng ng. Khi K = 1 l trng hp ghp l tng, khi ton b s t thng sinh ra do cun s cp c i qua cun th cp v ngc li. Trn thc t s dng, khi K 1 gi l hai cun ghp cht khi K<<1 gi l hai cun ghp lng
Do
U2 = U1.
N2 N1
(2. 18)
Trong U1 - in p cm ng ca cun dy s cp. N2 - H s bin p l t s gia s vng dy cun th cp v cun s cp. N1 Do nu: N1 = N2 th U1 = U2 ta c bin p 1 : 1 N2 > N1 th U2 > U1 ta c bin p tng p N2 < N1 th U2 < U1 ta c bin p h p
c. Dng in s cp v dng in th cp: Quan h gia dng in cun s cp v cun th cp theo t s: I1 U 2 N 2 = = I 2 U1 N 1
V dng in cun th cp bng: N (2. 19) I2 = I1 1 N2 Ta thy t s dng in cun s cp v cun th cp l t s nghch o ca in p cun s cp v cun th cp, nn mt bin p tng p cng chnh l mt bin p h dng v ngc li. d. Hiu sut ca bin p: Cc bin p thc u c tn tht nn ngi ta ra a thng s hiu sut ca bin p. Hiu sut ca bin p l t s gia cng sut ra v cng sut vo tnh theo %: P P2 100% (2. 20) = 2 . 100% = P1 P2 + Pton that P1 - cng sut a vo cun s cp P2 - cng sut thu c cun th cp Ptn tht - Cng sut in mt mt do tn tht ca li v tn tht ca dy ng. Mun gim tn hao nng lng trong trong li st t, dy ng v t thng r ngi ta dng loi li lm t cc l st t mng, c qut sn cch in, dng dy ng c tit din ln v ghp cht. trong
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Bin p l thit b lm vic vi dng in xoay chiu, cn khi lm vic vi tn hiu xung gi l bin p xung. Ngoi cng dng bin i in p, bin p cn c dng cch in gia mch ny vi mch kia trong trng hp hai cun dy s cp v th cp cch in vi nhau v c dng bin i tng tr trong trng hp bin p ghp cht. Bin p cao tn dng truyn tn hiu c chn lc th dng loi ghp lng, nhng bin p cao tn dng bin i tng tr th dng loi ghp cht. Bin p ghp cht l tng c 100%, khng c tn tht ca li v dy (K 1). Sau y l mt s loi bin p thng dng. a. Bin p cng hng: y l bin p cao tn (dng trung tn hoc cao tn) c li khng kh hoc st bi hoc ferit. Cc bin p ny ghp lng v c mt t in mc cun s cp hoc cun th cp to cng hng n. Thng thng tn s cng hng c thay i bng cch iu chnh v tr ca li hoc bao li. Nu dng hai t in mc hai cun hai bn th ta c th c cng hng kp hoc cng hng lch. m rng di thng tn, ta dng mt in tr m mc song song vi mch cng hng. Lc th chn lc tn s ca mch s km i. Thit k cc bin p cng hng phi xt n mch c th, nht l c tnh ca cc linh kin tch cc v phi lin h n in cm r v in dung phn tn ca cc cun dy.
b. Bin p cp in (bin p ngun): L bin p lm vic vi tn s 50 Hz, 60 Hz. Bin p ngun c nhim v l bin i in p vo thnh in p v dng in ra theo yu cu v ngn cch thit b khi khi ngun in. Cc bin p thng c ghi gii hn bng Vn- Ampe. Cc yu cu thit k chnh ca mt bin p cp in tt l: - in cm cun s cp cao gim dng in khng ti xung gi tr nh nht. - H s ghp K cao in p th cp t st khi c ti. - Tn tht trong li cng thp cng tt . - Kch thc bin p cng nh cng tt. c. Bin p m tn: Bin p m tn l bin p c thit k lm vic di tn s m thanh khong t 20 Hz n 20000 Hz. Do bin p ny c dng bin i in p m khng c gy mo dng sng trong sut di tn s m thanh, dng ngn cch in mt chiu trong mch ny vi mch khc, bin i tng tr, o pha, v.v.. Cc yu t nh hng n bin p m tn cn ch : - p ng tn s: tn s thp, cng sut ra b gii hn ch yu bi in cm cun s cp. p ng tn s bng phng khong tn s t 100 Hz n 10 KHz. khong ny, s thay i tn s khng gy nh hng n in p ra U2.
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U2
tn s cao, s mt mt nng lng do li st tng n mc in p ra b gim xung. Nh vy tn s lm vic cao, nh hng ca in cm r v in dung phn tn gia cc vng dy cao hn. - Kh nng truyn ti cng sut: c th truyn ti cng sut cc i phi chp nhn mt lng mo dng sng nht nh. Lng mo ny tu thuc vo ngi thit k. Bin p m tn c th dng li st t hoc li ferit, v trn bin p c ghi cng sut (tu thuc vo kch thc...), tng tr cun s cp v tng tr th cp, loi c im gia... Li bin p m tn cng thng c khe khng kh chng bo ha t do dng in mt chiu gy ra. d. Bin p xung: Bin p xung c hai loi: loi tn hiu v loi cng sut. Bin p xung c yu cu v di thng tn kht khe hn so vi bin p m tn. hot ng tt c tn s thp (nh v y xung) v tn s cao (sn xung), bin p xung cn phi c in cm s cp ln, ng thi in cm r nh v in dung gia cc cun dy nh. khc phc cc yu cu i khng ny vt liu li cn c t thm cao v kt cu hnh hc ca cun dy thch hp. Vt liu li ca bin p xung c chn ty thuc vo di tn hot ng c th l st t hoc ferit. e. Bin p nhiu u ra: Bin p nhiu u ra gm c 1 cun s cp v nhiu cun th cp. in p ra mi cun ph thuc vo s vng dy ca cun cng nh ph thuc vo in p cun s cp v s vng dy ca cun s cp.
Rt1
~
Rt2
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Mt iu quan trng cn ch l tng in p ra c tnh l tng ca cc in p th cp nu cc cun th cp ni ghp theo kiu tr gip v tt c cc in p ca cc cun dy u cng pha. Nu 1 trong cc cun dy ghp ni theo kiu ngc li, sao cho in p ca n ngc pha vi cc in p khc th phi ly cc in p khc tr i in p ca n.
TM TT NI DUNG Cu kin in t th ng thng dng gm c in tr, t in, cun cm v bin p. in tr (R) c coi l phn t thng dng nht ca cc mch in t. y l cu kin c ch to t cht dn in c in tr sut cao. Tr s ca in tr c tnh theo nh lut m. in tr dn dng mt chiu v xoay chiu nh nhau. Cc tham s k thut chnh ca in tr l: - Tr s in tr v dung sai: Tr s in tr o bng n v m (), n cho bit kh nng cn in nhiu hay t ca in tr; Dung sai ca in tr ch phn trm (%) sai s cho php ca in tr so vi gi tr danh nh ca n. - Cng sut tiu tn cho php l cng sut in cao nht m in tr c th chu ng c, qu tr s ny th in tr s b nng, chy v hng. Tham s ny thng c ch khi in tr lm vic mch in c dng in ln. - H s nhit ca in tr (TCR) biu th nh hng ca nhit ln tr s ca in tr thng tnh theo n v phn nghn trn bch phn (ppm/oC). in tr c ch to v ghi cc tham s cn thit trn thn ca n ngi s dng c th c d dng. C mt s cch ghi thng dng c cc nh sn xut qui nh nh ghi trc tip, ghi gin tip theo qui c m, qui c mu... T in (C) l cu kin in t c dng lm phn t tch in tch trong mch. T in ngn cn dng in mt chiu v dn dng in xoay chiu. Dng in v in p trn t in lch pha nhau 90 . Cc tham s k thut chnh ca t in l: - Tr s in dung v dung sai: Tr s in dung biu th kh nng tch in ca t in v n c o bng n v Farad (F). Tuy nhin n v ny rt ln nn trong k thut thng dng cc c s ca n l Micr Farad (F), nan Farad (nF), pic Farad (pF). Dung sai ca in dung l sai s cho php tnh theo phn trm (%) so vi gi tr in dung danh nh ca t in. - in p lm vic cho php (Vdc) l tr s in p cao nht o bng vn m t in chu ng c, qu gi tr ny t in s b nh thng. - H s nhit ca t in (TCC) biu th nh hng ca nhit ln tr s in dung c tnh bng phn triu trn bch phn (ppm/oC). Cun cm (L) l cu kin in t dng to thnh phn cm khng trong mch. Cun cm dn dng in mt chiu v tn s thp d dng, dng xoay chiu c tn s cng cao qua cng kh. Cm khng ca cun cm c tnh theo cng thc: XL = 2fL. Dng in v in p trn cun cm lch pha 90 . Khi s dng cun cm chng ta phi ch n cc tham s k thut c bn sau: - in cm ca cun dy ( L) o bng henry (H). in cm ph thuc vo kch thc ca cun dy, s vng dy v cch qun dy, vo li ca cun dy. - H s phm cht ca cun cm (Q). Xt h s phm cht ca cun cm chng ta phi xt v tn hao ca cun dy. tn hao c c trng bng mt in tr ni tip vi cun dy. H s phm cht Q = XL/r (r- in tr ca cc thnh phn to ra cun dy).
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Cu kin in t th ng
Tn s lm vic gii hn (fg.h.) l tn s cao nht m cun dy vn lm vic bnh thng, vn m bo cc tham s k thut ca cun dy. Chng ta xem xt mt s loi cun cm thng dng: + Cun cm khng c li, l cc cun cm lm vic tn s cao v siu cao nn yu cu v in dung ring ca cun cm phi rt nh, h s phm cht cao v chng thng l cc cun cng hng. + Cun cm li fe-rit: l cc cun cm lm vic tn s cao v trung tn v chng cng thng l cun cng hng. Cun cm li fe rit c th iu chnh in cm c v n c nhiu hnh dng khc nhau. + Cun cm li st t: l cc cun cm lm vic tn s thp, thng l cun chn cao tn, hoc cun lc ngun. Bin p l cu kin dng bin i in p nh vo hin tng h cm ca cc cun dy t gn nhau. Cu to c bn ca bin p gm c cun s cp v cun th cp. Cun s cp c u vo thng c u vi ngun in p cn bin i, cun th cp thng c u ra u vi ti tiu th. Khi s dng bin p chng ta cn ch cc tham s k thut c bn ca chng. - T s in p gia cun th cp v cun s cp: U2/U1 = N2/N1, trong N1 v N2 l s vng dy ca cun s cp v cun th cp, tng ng. - T s gia dng in th cp v dng in s cp: I2/I1 = N1/N2 - T s gia tr khng vo v tr khng ra: Z2/Z1 = N1/N2 - H s ghp bin p K Bin p c nhiu loi, thng thng c phn chia theo mc ch s dng l bin p cng hng, bin p ngun, bin p m tn v bin p xung. Bin p cng hng lm vic tn s cao v trung tn, thng l loi khng c li hoc li fe-rit. Bin p cng hng dng bin i tng tr th thuc loi ghp cht, cn dng truyn tn hiu c chn lc th thuc loi ghp lng. Bin p ngun dng bin i in p tn s cng nghip (50Hz, 60Hz). Bin p ngun thng dng li st t v l loi ghp cht. Bin p m tn lm vic di tn s m thanh nn yu cu v p ng tn s phi tt trong sut di tn cng tc. Bin p xung l loi bin p lm vic ch tn hiu xung nn yu cu v p ng tn s cn cao hn bin p m tn v n phi lm vic tt tn s cao cng nh tn s thp. Bin p m tn c li l st t hoc fe-rit tu theo yu cu mch in.
CU HI N TP 1. Hy cho bit cc tham s c bn ca in tr? 2. Trnh by v cc cch phn loi in tr v nu ng dng ca chng? 3. Cho bit cc tham s c bn ca t in? 4. Nu cc cch phn loi t in, cho mt vi v d. 5. nh ngha v cun cm v nu cc tham s chnh ca n. 6. Trnh by v c im ca cun cm li khng kh v phm vi s dng ca chng? 7. Trnh by cc c im ca cun cm li fe-rit v ng dng ca chng? 8. Hy cho bit cc c tnh ca cun cm li st t v ng dng? 9. Nu nh ngha, cu trc v tham s chnh ca bin p? 10. Trnh by v bin p cng hng? 11. Nu cc yu cu v c im chnh ca bin p m tn? 12. c im ca bin p ngun?
50
Cu kin in t
Cu kin in t th ng
13. Da vo % dung sai, in tr c phn chia lm. a. 3 loi; b. 4 loi; c. 5 loi; d. 6 loi 14. Cu trc ca bin tr khc vi in tr c nh ch yu l do .. a. v bc v li b. vt liu cn in c. s chn ca cu kin. d. c thm con chy iu chnh tr s in tr. 15. Bin p m tn c thit k lm vic di tn s. a. t 0Hz n 20.000Hz; b. t 20KHz n 1MHz c. t 20Hz n 20.000Hz; d. t 6MHz n 1GHz
TI LIU THAM KHO 1. Gio trnh Cu kin in t v quang in t, Trn Th Cm, Hc vin CNBCVT, nm 2002. 2. Fundamentals of electric circuits, David A. Bell, Prentice-Hall International Editions, 1988
51
cu kin in t
it bn dn
CHNG 3 IT BN DN GII THIU CHNG Chng 3 trnh by v cc tnh cht vt l in ca lp tip xc P-N. Lp tip xc P-N l b phn chnh ca cc cu kin bn dn. Lp tip xc P-N bao gm cc ion m v dng c nh, chng khng dn in nn lp tip xc P-N cn c gi l lp in tch khng gian hay lp ngho ht dn. Trong chng 3 s trnh by v cc tnh cht dn in ca lp tip xc P-N khi c phn cc thun v phn cc ngc. Cng trong chng ny chng ta s c gii thiu v mt cu kin bn dn ch c mt lp tip xc P-N l it bn dn. it bn dn c nguyn l dn in mt chiu v ta cng nghin cu v c tuyn vn-ampe ca n, cc tham s tnh ca it v ch ng ca n. Ngoi ra chng 3 cn gii thiu mt s loi it thng dng. NI DUNG 3.1. LP TIP XC P-N S to thnh lp tip xc P-N v cc tnh cht in. Nu trn mt ming bn dn n tinh th (bn dn nguyn tnh), bng cc phng php cng ngh, ta to ra hai vng c bn cht dn in khc nhau: mt vng l bn dn tp loi P v mt vng kia l bn dn tp loi N. Nh vy, ti ranh gii tip xc gia hai vng bn dn P v N ny s xut hin mt lp c c tnh vt l khc hn vi hai vng bn dn P v N, c gi l lp tip xc P-N. Trong lp tip xc P-N ch bao gm hai khi in tch tri du l cc ion m bn pha bn dn P v ion dng bn pha bn dn N. y l cc ion c nh,khng dn in, do vy, lp tip xc P-N cn gi l vng in tch khng gian hay vng ngho ht dn. dy ca lp ny khong 10-4 cm = 10-6 m = micron. Hnh 3.1 m t cc tnh cht in ca tip xc P-N. Trong lp tip xc tn ti mt in trng tip xc hay in trng khuch tn (Hnh 3-1c) c cng l E c tnh l tch phn ca mt in tch (trong hnh 3-1b). in trng tip xc ny c chiu tc dng t bn dn N sang bn dn P. S thay i ca in th tnh vng in tch khng gian c ch ra hnh (3-1d). chnh l hng ro th nng ngn cn s khuch tn tip theo ca cc l trng qua lp tip xc. Hnh dng hng ro th nng, hnh (3-1e), ngn cn s khuch tn ca cc in t t bn dn N qua lp tip xc. 3.1.1
52
cu kin in t
it bn dn
Ion nhn a/
Mt tip xc
Ion cho
L trng
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
in t t do
d2V = 2 dX e
(e=2,73) c/ Cng in trng tip xc E
E=
dV = dX dX e
V0 V=0 E=0 Pha N khong cch t tip xc P-N khong cch t tip xc P-N
e/ Hng ro th nng i vi in E0 t
Hnh 3 - 1 : th ca tip xc P-N gm: a- cu trc tip P-N ; b- mt in tch c- cng in trng d, e- hng ro th nng tip xc P-N 3.1.2. iu kin cn bng ng ca lp tip xc P-N Khi dng in do cc ht dn chuyn ng khuch tn v cc ht dn chuyn ng tri qua tip xc P-N c gi tr bng nhau th ta ni tip xc P-N trng thi cn bng ng,. Do cc dng in ny ngc chiu nhau nn chng trit tiu ln nhau v dng in tng qua lp tip xc P-N bng khng. Lc ny lp tip xc c b dy k hiu l d, in tr lp tip xc k hiu l RP/N, cng in trng tip xc k hiu l E0 (hay cn gi l hng ro th nng) v tng ng vi n c hiu in th tip xc k hiu l V0. Cc i lng ny ta s tnh c qua 53
cu kin in t
it bn dn
cc cng thc di y. Do lp tip xc P-N l vng ngho ht dn nn in tr ca n ln hn nhiu in tr ca hai vng bn dn P v N (RP/N >>RN v RP). iu kin cn bng ny gip ta tnh c cao ca hng ro th nng V0 ph thuc vo nng tp cht cho v tp cht nhn. Gi tr ca V0 khong t vi phn mi vn. Theo hnh (3- 2) ta thy mc nng lng Fecmi ca c hai phn bn dn P v N nm trn mt ng thng. Mc nng lng E0 - th nng ca in t hay hng ro th nng ca in t tip xc P-N khi n trng thi cn bng l: E0 = ECp - ECn = EVp - EVn (3 . 1)
Bn dn loi N Vng dn
E0
Ei
EVP E0
EF
Hnh 3 - 2: th vng nng lng ca tip xc P-N khi h mch (trng thi cn bng). Phc ha ny minh ha cho hnh 3-1e v biu th th nng ca in t. B rng vng cm EG [eV]. Hiu in th tip xc V0 tip xc P-N trong trng thi cn bng nhit ng c tnh theo cng thc sau: N N (3. 2) V0 = Vn Vp = VT ln D 2 A ni Tng ng vi V0 ta c cng in trng tip xc trng thi cn bng nhit ng E0 l: E0 = KT ln
NDNA ni
2
(3. 3)
Trong E0 o bng [eV], v V0 o bng [V] . Ngoi ra, hiu in th tip xc E0 cn c tnh theo cng thc sau: P n E0 = KT ln P0 = KT ln n0 (3. 4) Pn0 n P0
Ch s 0 trong cng thc trn biu th rng cc nng ht dn ny c tnh iu kin cn bng nhit ng.
3.1.3. Lp tip xc P-N khi phn cc thun.
54
cu kin in t
it bn dn
Tip xc P-N c phn cc thun khi ta t mt ngun in p bn ngoi ln lp tip xc P-N c chiu cc dng c ni vo bn dn loi P v cc m ni vo bn dn N. Vngoi
+ + + +
N E0
ECp Ei EF EVp
Engoi
Chiu tc dng ca in trng ngoi ngc li vi chiu tc dng ca in trng tip xc trong lp tip xc P-N nn lc ny lp tip xc P-N khng cn trng thi cn bng ng na. in trng trong lp tip xc gim xung, hng ro th nng gim xung mt lng bng in trng ngoi: ET.X. = E0 - Engoi (3. 5) Do phn ln cc ht dn a s d dng khuch tn qua tip xc P-N, kt qu l dng in qua tip xc P-N tng ln. Dng in chy qua chy qua tip xc P-N khi n phn cc thun gi l dng in thun Ith. Khi tng in p thun ln, tip xc P-N c phn cc thun cng mnh, hiu in th tip xc cng gim, hng ro th nng cng thp xung, ng thi in tr lp tip xc gim, b dy ca lp tip xc cng gim, cc ht dn a s khuch tn qua tip xc P-N cng nhiu nn dng in thun cng tng v n tng theo qui lut hm s m vi in p ngoi. Khi in p thun c gi tr xp x vi V0, dng in chy qua tip xc P-N thc s c khng ch bi in tr thun ca tip xc kim loi v in tr khi tinh th. Do vy c tuyn Vn-Ampe gn ging mt ng thng.
3.1.4. Lp tip xc P-N khi phn cc ngc. Lp tip xc P-N c phn cc ngc khi ta t mt ngun in p ngoi sao cho cc dng ca n ni vi phn bn dn N, cn cc m ni vi phn bn dn P. Khi in p ngoi s to ra mt in trng cng chiu vi in trng tip xc E0, lm cho in trng trong lp tip xc tng ln: ET.X. = E0 + Engoi (3. 6) Tc l hng ro th nng cng cao hn. Cc ht dn a s kh khuch tn qua vng in tch khng gian, lm cho dng in khuch tn qua tip xc P-N gim xung so vi trng thi cn bng.
55
cu kin in t
it bn dn
Vngoi
+ -
+ + + +
+ + + +
ng thi, do in trng ca lp tip xc tng ln s thc y qu trnh chuyn ng tri ca cc ht dn thiu s v to nn dng in tri c chiu t bn dn N sang bn dn P v c gi l dng in ngc Ingc. Nu ta tng in p ngc ln, hiu in th tip xc cng tng ln lm cho dng in ngc tng ln. Nhng do nng cc ht dn thiu s c rt t nn dng in ngc nhanh chng t gi tr bo ha v c gi l dng in ngc bo ha I0 c gi tr rt nh khong t vi nA n vi chc A. Dng in qua tip xc P-N: a. Dng in thun: Khi tip xc P-N phn cc thun, qua n c dng in thun. l dng in do cc ht dn a s khuch tn qua tip xc P-N. Ta c: Nng Pn Phn bn dn N Pn(0) Cc in tch c "phun" vo Pn(0) Pn(x) Pno x=0 x Tip xc P-N khong cch x
Hnh 3 - 5: Nng l trng trong bn dn N khi tip xc P-N phn cc thun (Pn(0) >> Pno
56
cu kin in t
it bn dn
+ Dng in l trng IPn(0) i qua tip xc P-N v pha bn dn N l (khi x = 0) S.q .D P Pno V (3. 7) IPn(0) = e VT 1 LP Trong : IPn(0) - l dng in do cc l trng khuch tn qua tip xc P-N. S - l din tch mt tip xc. q - in tch ca in t. DP - H s khuch tn ca l trng. LP - di khuch tn ca l trng. Pno - Nng ht dn l trng bn bn dn N. V - in p phn cc thun. KT T VT - in th nhit (VT = = ). q 11600 e - s t nhin (= 2,73) Pno( e - 1) = Pn(0) gi l mt l trng "phun" vo pha bn dn N. + Dng in in t Inp(0) khuch tn qua tip xc P-N vo pha bn dn P l:
V S.q.D n n po VT e 1 Inp(0) = Ln V VT
(3. 8)
Dng in qua tip xc P-N l tng ca 2 thnh phn dng in IPn(0) v Inp(0), vy ta c: I = IPn(0) + Inp(0) = I0( e 1 ) Trong I0 gi l dng in ngc bo ha v c biu thc: S.q.D P Pno S.q.D n n po I0 = + LP Ln
V VT
b. Dng in ngc bo ha: Thay cc gi tr Pno = Pn v npo = np ta c cng thc tnh dng in I0 :
DP Dn 2 I0 = S.q. + .ni LP N D Ln N A
(3. 11)
Trong : ni = A0 T e
2 3
E Go KT
= A 0T e
3
VG0 VT
y c VGo l in p c cng i lng vi EGo (nng lng vng cm 00K) Do s ph thuc vo nhit ca dng I0 l: I0 = K1 T2 e
V VT
VG0 VT
(3. 12)
57
cu kin in t
it bn dn
c tuyn Vn-Ampe ca tip xc P-N biu din mi quan h gia dng in chy qua tip xc v in p ngoi t ln tip xc: I = f(Vngoi) Dng in lin quan vi in p theo cng thc (3.13): I = I0 ( e 1 ) VT -in th nhit ca bn dn. nhit trong phng VT=0,026V= 26mV. Dng c tuyn Vn-Ampe ca tip xc P-N m t hnh (3-6):
V VT
Ithun (mA)
I0 0 Ingc (A)
Hnh 3 - 6: c tuyn Vn-Ampe ca tip xc P-N l tng Kt lun: Qua c tuyn Vn-Ampe dng in thun o bng mA, cn dng in ngc ch o bng A. iu ny cho thy tip xc P-N ch dn in mt chiu khi tip xc P-N c phn cc thun: Ithun >> Ingc = - I0 ( v I0 0) v c gi l hiu ng chnh lu. 3.2. IT BN DN
+Vngoi
it bn dn l cu kin gm c mt lp tip xc P-N v hai chn cc l ant (k hiu l A) v catt (k hiu l K). Ant c ni ti bn dn P, catt c ni vi bn dn N c bc trong v bo v bng kim loi hoc nha tng hp.
Lp tip xc P-N
a/ Cu to
b/ K hiu
58
cu kin in t
it bn dn
Hot ng ca it da trn tnh dn in mt chiu ca tip xc P-N. Hnh 3-8 m t s nguyn l u it.
Khi a in p ngoi c cc dng vo ant, m vo catt (UAK > 0) th it s dn in v trong mch c dng in chy qua v lc ny tip xc P-N c phn cc thun. Khi in p ngoi c cc m a vo ant, cc dng a vo catt (UAK < 0) it s kha v tip xc P-N phn cc ngc, dng in ngc rt nh (I0 0) chy qua .
3.2.3 c tuyn vn-ampe ca it bn dn.
c tuyn vn- ampe ca it biu th mi quan h gia dng in qua it vi in p t gia hai chn cc ant v catt (UAK). y chnh l c tuyn vn-ampe ca lp tip xc P-N, do vy dng in chy qua it c tnh theo cng thc sau: I = I0 ( e
U AK VT
- 1)
U.t. 2 1
0,1Ith.max
0 UD
+UAK
Hnh 3- 9 m t c tuyn Vn-Ampe ca mt it thc. Ta thy: Phn thun ca c tuyn (khi UAK > 0):
59
cu kin in t
it bn dn
Khi it c phn cc thun th dng in thun tng rt nhanh. Ta phi ch n gi tr dng in thun cc i Ithun max, it khng c lm vic vi dng in cao hn tr s ny. Khi UAK >0 nhng tr s nh th dng in thun qu nh nn i t cha c coi l phn cc thun. Ch khi in p thun UAK UD th i t mi c tnh l phn cc thun v it mi dn in. in p UD c gi l in p thun ngng ca it. Khi UAK = UD th dng in thun c tr s bng khong 0,1Ith.max. v khi UAK > UD th dng in thun tng nhanh v tng gn nh tuyn tnh vi in p. UD c gi tr bng (0,1 0,3)V i vi it gecmani v bng (0,4 0,8)V i vi it silic.
Phn ngc ca c tuyn Vn-Ampe: Khi UAKln hn vi ln VT th dng in ngc c gi tr bng I0 v gi nguyn gi tr ny. Khi UAK < 0 tng ln n tr s U.t. th dng in tng vt, ta gi y l hin tng nh thng tip xc P-N. Hin tng nh thng tip xc P-N lm mt kh nng chnh lu ca it v thng thng n lm hng it, tr it Zener l it s dng hin tng nh thng n nh in p. in p ti im nh thng ta gi l in p nh thng v k hiu l U.t.. C hai hin tng nh thng: - nh thng v in (ng 1) - nh thng v nhit (ng 2) + nh thng v nhit xy ra do tc ng nhit. Hin tng nh thng v nhit thng xy ra i vi it gecmani. Lc ny tng i in t v l trng c sinh ra do tc dng ca nhit nng lm cho dng in tng ln cn st p trn it gim. + nh thng v in hay xy ra i vi it silic v n c ngha thc t hn. Hin tng nh thng v in thng xy ra theo 2 c ch sau: - nh thng ng hm: l s nh thng xy ra mt gi tr in trng no gi l gi tr ti hn Et.h. t ln tip xc P-N. iu kin xy ra hin tng nh thng ng hm l: Emax = Et.h. Thng thng Et.h. = 3.107 V/m i vi it gecmani v Et.h. = 8.107 V/m i vi it silic. - nh thng thc l: l s ion ha cc nguyn t ca mng tinh th bi s va chm vi cc ht ti in mang nng lng ln. in p nh thng: Tu theo vt liu m in p nh thng c th t vi vn n hng chc ngn vn. 3.2.4 Cc tham s tnh ca it.
nh gi, la chn v s dng it chng ta phi bit cc tham s k thut ca n. Cc tham s c bn ca it:
a. in tr mt chiu hay cn gi l in tr tnh: R0 L in tr ca it khi lm vic ch ngun mt chiu hoc ti ch tnh U R0 = [ ] (3.14) I in tr mt chiu R0 chnh l nghch o gc nghing ca c tuyn Vn-Ampe ti im lm vic tnh M (gc 1).
60
cu kin in t
it bn dn
I (mA)
1 U
2
UAK (V)
Ri =
dU dI
[]
c. in dung ca it: Cd (hay in dung ca tip xc P- N) in dung ca tip xc P- N gm c 2 thnh phn l in dung ro th (k hiu C0) v in dung khuch tn (k hiu Ck.t.). Ta c: (3. 17) Cd = C0 + Ck.t.
+ in dung ro th C0 : S tng cc in tch khi t in p ngc ln tip xc P-N gi l hiu ng in dung. gia tng ca in dung ny s l: C0 =
dQ dU
(3. 18)
Trong dQ l s gia tng ca in tch do s thay i dU ca in p. Tham s C0 khng phi l mt tr s c nh, n ph thuc vo tr s in p ngc t vo tip xc P-N v c xc nh theo cng thc (3.18). Ngoi ra, mt in tch l mt hm ca b dy lp tip xc, do in dung C0 c th tnh theo cng thc: S (3. 19) C0 = r 0 d Trong S : din tch mt tip xc 61
cu kin in t
it bn dn
d : b dy lp tip xc r : hng s in mi tng i ca cht bn dn 0 : thm thu in ca khng kh Khi tng in p ngc, b dy lp tip xc tng nn tr s C0 gim xung. + in dung khuch tn: Ck.t. in dung khuch tn ch xut hin khi c hin tng khuch tn xy ra. Do khi it phn cc thun th Ck.t. >> C0 , cn khi it phn cc ngc th Ck.t. = 0 v Cd = C0. i vi i t bn dn, in dung tip xc P-N gy nhiu nh hng xu cho it khi lm vic tn s cao. Do , m bo cho it lm vic cao tn v siu cao tn th tr s in dung phi nh v cc it ny phi l cc it tip im din tch mt tip xc nh v tn s lm vic gii hn khong 300 600 MHz, c loi ti hng chc GHz.
d. in p ngc cc i cho php: Ungc max L gi tr in p ngc ln nht c th t ln it m n vn lm vic bnh thng. Thng thng tr s ny c chn khong 0,8U.t. [V]; in p ngc cc i Ung. ma x c xc nh bi kt cu ca it v n nm trong khong vi vn n 10 ngnVn. e. Khong nhit lm vic: L khong nhit m bo it lm vic bnh thng. Tham s ny quan h vi cng sut tiu tn cho php ca it. Pttmax = ImaxUAKmax (3. 20) 0 Khong nhit lm vic ca it gecmani khong t - 60 C n +850C , cho it silic khong t - 600C n +1500C. 3.2.5 S ph thuc ca c tuyn Vn-Ampe vo nhit .
Nh cng thc tnh dng in qua tip xc P-N: I = I0 ( e 1 ) Ta thy s ph thuc ca dng in vo nhit thng qua tham s in th nhit VT v dng in ngc bo ha I0. Dng in ngc bo ha ph thuc vo nhit theo cng thc c vit gn ng l: (3. 21) I0 = K Tm e VT Trong K - l mt hng s VGo - l nng lng vng cm o bng Jun Qua thc nghim ngi ta thy rng, i vi c hai loi it Ge v Si, dng in ngc bo ha tng xp x gp 2 ln i vi mi mt s tng nhit ln 100C. cho dng in khng i khi nhit thay i th in p t ln it phi gim vi tc l:
VG0 U VT
cu kin in t
it bn dn
Trong iu kin it lm vic nhit phng v in p ngng UD=0,2V cho it Ge v UD = 0,6 V cho it Si.
3.2.6 Ch ng ca it.
Khi it lm vic trong cc ch tn hiu bin i ta gi l ch ng ca it. i vi it c cc s tng ng khi n phn cc thun v phn cc ngc. S tng ng vt l ca mt it bn dn:
I0 >> A RS RP/N LS K
C0. CP Ck.t.
it c coi nh mt mng hai cc v s tng ng ca n nh m t hnh 311. Trong hnh c: RS - in tr ni tip,l in tr tip xc kim loi, chn cc v ca hai phn bn dn N v P. CP - in dung song song, l in dung ca chn cc v hai phn bn dn N v P. LS - in cm ni tip, l in cm ca chn cc it RP/N - in tr ca tip xc P N. C0 - in dung ro th ca tip xc P N. Ck.t - in dung khuch tn ca tip xc P N. I0 ngun dng
3.2.6.1 Cc s tng ng khi it phn cc thun.
a. S mt kha in t trng thi ng: Khi phn cc thun, in p phn cc UD = 0,6V cho it Si, v UD = 0,2V cho it Ge l qu nh so vi cc in p khc nn c th b qua. it lc ny coi nh ngn mch.
I I A U = UD K A VD 0 63 0
a/ M hnh it phn cc thun vi VD = 0,6V 0V
I K UAK
cu kin in t
it bn dn
b. S mt ngun p l tng:
I I A U = UD K A UD = 0,6V
UD = 0,6V
+ K UAK
I I A U = UD K UD A Ri K IM M
UD
UM
UAK
Hnh 3 -14: it l mt ngun in p thc d. S mt in tr Ri ch tn hiu nh tn s thp: ch ny it c coi nh mt phn t tuyn tnh.
A
Ri = VT IM I E/R 64
K i M2
IM+i e ~
R Ri UM+
IM
cu kin in t
it bn dn
Ch ng l ch it lm vic vi ngun xoay chiu e. ch ng th im lm vic M nm trn on thng M1M2, v it c coi nh mt phn t tuyn tnh (in tr Ri) v xung quanh im M ta c th s dng nh lut m nh sau: e u = Ri i = Ri (3. 23) R + Ri
e. S tng ng ch tn hiu nh tn s cao: ch ny it c coi nh mt in tr thun Ri mc song song vi mt in dung khuch tn Ck.t.. in dung Ck.t. xut hin trong khong thi gian l khong thi gian lch pha gia i v u. in dung Ck.t. c xc nh:
Ck.t. =
Ri
trong c gi tr khong vi ns n s.
I E/R
i M2 (t=0)
K IM M M1 0
t UAK
UM
Ri Ck,t,
u t
Hnh 3 -16: it ch tn hiu nh tn s cao 3.2.6.2 S tng ng ca it khi phn cc ngc. a. S mt kha trng thi h:
i=0 A K A
cu kin in t
it bn dn
b.
i = -I0
i = -I0
>>
c.
Hnh 3 -18: it l mt ngun dng l tng S mt in dung chuyn tip ch tn hiu nh:
A Ungc
A Ungc
Ct.x
Hnh 3 -19: it nh mt t in Ct.x. - y l in dung c tr s bin thin cng vi s bin thin ca in p ngc t ln n theo qui lut: C0 Ct.x. = Vi n = 2 3 1 n Vnguoc
66
cu kin in t
it bn dn
a/ U~ b/ U~
D Rt
U~ t UR t
D3 D2 D4
D1 Rt
UR t
Hnh 3 -20 : a. Mch chnh lu na chu k v dng in p trn ti b. Mch chnh lu ton sng (c chu k) v dng in trn ti
Hin nay it chnh lu ph bin nht l it Silic v c nhit lm vic cao. it chnh lu Gemani dng cho cc chnh lu cng sut nh. Dng in chnh lu v in p ngc cho php ph thuc nhiu vo nhit mi trng nn cc it cng sut thng c gn trn cc b ta nhit. Hnh 3-20: Gii thiu mt s mch chnh lu. it chnh lu Gecmani: L it ch to t cht bn dn Ge. it chnh lu gecmani c dng in ngc bo ha kh nh khong vi trm micrampe. in p ngc ti a cho php khng vt qu 400 V. c tuyn phn ngc c on bo ha v hin tng nh thng xy ra thng l nh thng v nhit nn c tuyn c on in tr m. Nhit lm vic gii hn ca it chnh lu Ge l 75C. Cc it chnh lu Ge cng sut ln thng phi dng cc phng php ta nhit tt. in dung ca it kh ln (hng chc pF) nn it Ge thng dng tn s thp. it chnh lu Silic: L cc it c ch to t cht bn dn Si Phn ngc ca c tuyn V-A ca it Si khng c on bo ha r rt. in p ngc ti a cho php cao hn nhiu so vi it Ge v khi cha b nh thng th lm vic kh n nh. Nhit lm vic gii hn ca it Silic l 125C. it Silic c in p nh thng c th ln ti 2500 V v hin tng nh thng v in l ch yu. it chnh lu a tinh th L loi it c dng kh rng ri. Thng thng cc it ny c lp ghp sn theo mt s nht nh to thnh cc ct chnh lu. it chnh lu a tinh th thng gp l it Slen, it xit ng.
b. it n p (Zne):
67
cu kin in t
it bn dn
Ngi ta s dng ch nh thng v in ca chuyn tip P-N n nh in p. in p nh thng ca it ph thuc vo b dy ca lp tip xc P-N, ngha l ph thuc vo nng tp cht a vo bn dn. Trong hnh 3 -21a l mch n p dng it Zne: E0 - l in p mt chiu cn n nh r - l in tr hn ch hn ch dng in trong mch D - it n p Rt - ti tiu th in p c n p
I I0 r E0 E0 + a/ U.. U. Id D IR R Pttmax b/
Hnh 3 -21: Mch in n p v c tuyn V-A
U..
0 Imin
UAK
Imax
b. it xung: ch xung, it c s dng nh kha in t gm c hai trng thi: "dn" khi in tr ca it rt nh v "kha" khi in tr ca n rt ln. it xung c cc thng s sau: - Gi tr dng in thun v dng in ngc: gi tr dng in thun cc i ca it lm vic ch xung ln hn ch lin tc rt nhiu. - Thi gian n nh in p thun t0: l khong thi gian k t thi im cp xung dng vo it cho ti khi t gi tr 1,1 ln gi tr in p thun n nh. - Thi gian phc hi kh nng ngt tp : l khong thi gian k t thi im khi it dn dng in ngc cho ti khi dng ngc t gi tr 0,1 ln gi tr dng ngc cc i. Theo tr s tp ngi ta chia it xung lm 3 loi chnh: + Loi tc cao c : tp < 10 nsec
68
cu kin in t
it bn dn
+ Loi tc trung bnh c : 10 nsec < tp < 100 nsec + Loi tc thp c : tp > 100 nsec d. i t Stky (Schottky) Cc it xung c cc loi it hp kim, it mza, it Stky. Trong it Stky c dng rng ri nht. it Stky s dng tip xc bn dn - kim loi. Thi gian phc hi chc nng ngt ca it Stky c th t ti 100psec. in p phn cc thun cho it Stky khong UD = 0,4V, tn s lm vic cao n 100 GHz. K hiu ca it Sotky trong cc s mch in:
e. it bin dung (varicap): L loi it bn dn c s dng nh mt t in c tr s in dung iu khin c bng in p. Nguyn l lm vic ca it bin dung l da vo s ph thuc ca in dung ro th ca tip xc P-N vi in p ngc t vo n.
C (PF) A K
a/ b/
Hnh 3 -22: a- K hiu ca it bin dung trong s mch b- S ph thuc ca in dung chuyn tip P-N theo in p ngc t ln n
+UAK
Tr s in dung cc i ca it bin dung ph thuc vo loi it v c tr s vo khong t (5 300) pF. Varicap thng c dng trong cc mch dao ng cn iu khin tn s cng hng bng in p lnh vc siu cao tn.
f. it tunen (hay it xuyn hm): it c ch to t cht bn dn c nng tp cht rt cao, thng thng n = (1019 1023)/cm3. Loi it ny c kh nng dn in c chiu thun v chiu ngc. Hiu ng tunen l hin tng cc ht dn chuyn ng qua tip xc P-N m khng b tn hao nng lng. K hiu ca it tunen v c tuyn Vn-Ampe
I (mA) 69 A IMax
cu kin in t
it bn dn
c tuyn V-A ca it tunen phn thun c on in tr m AB. Ngi ta s dng on c tuyn AB ny to cc mch dao ng phng np. it tunen c kch thc nh, n nh cao v tn s lm vic ln ti hng nghn MHz. g. it cao tn: Cc it cao tn thng l loi it tip im v thng dng x l cc tn hiu cao tn nh: it tch sng dng tch tn hiu tn thp t dao ng iu bin. it trn sng dng thay i tn s sng mang ca dao ng iu bin. it iu bin dng iu bin cc dao ng cao tn (sng mang) theo cc tn hiu m tn.. Sng mang A C L1 IC L2 K t i C R Tn hiu m tn
a/
t UT.B t b/
Hnh 3 -24: a- Mch tch sng AM; b- tn hiu m tn v sng mang trong qu trnh tch sng TM TT NI DUNG Trong chng 3 trnh by v s hnh thnh ca lp tip xc P-N, cc tnh cht c bit v in ca lp tip xc P-N v quan trng l tnh dn in mt chiu ca n: ch khi tip
70
cu kin in t
it bn dn
xc P-N phn cc thun th n mi dn in. Dng in chy qua tip xc P-N c to nn do hai loi ht dn l ht dn in t v ht dn l trng.
V
I = IPn(0) + Inp(0) = I0( e VT 1 ) Trong Ipn(0) v Inp(0) l dng in l trng v dng in in t, tng ng, i qua tip xc P-N; I0 l dng in ngc bo ha; V l tr s in p ngoi t ln tip xc P-N v VT l in th nhit ca bn dn ( nhit phng VT 0,026V). c tuyn Vn-Ampe ca tip xc P-N biu din mi quan h gia dng in chay qua tip xc v in p ngoi t ln n. Qua y chng ta thy rng: dng in khi tip xc P-N c phn cc thun ln hn rt nhiu ln dng in khi tip xc c phn cc ngc. Thc t, dng in ngc I0 rt nh ch khong t vi nA i vi bn dn silic n vi chc A i vi bn dn gecmany, nn c th coi I0 0. Trong chng ny chng ta cng nghin cu v it bn dn. y l cu kin bn dn ch c mt lp tip xc P-N. Nguyn l hot ng ca it l da vo tnh dn in mt chiu ca tip xc P-N: it ch dn in khi c phn cc thun (UAK>0). c tuyn Vn-Ampe ca i-t cng ging nh c tuyn Vn-Ampe ca tip xc P-N, nhng y l c tuyn Vn-Ampe ca mt cu kin thc t nn c mt s im cn lu . V phn thun ca c tuyn, ta thy ch khi no UAKUD th i-t mi c tnh l phn cc thun. Trong UD gi l in p thun ngng: i vi i-t gecmany UD = 0,1V 0,3V; i vi it silic UD = 0,4V 0,8V. Ngoi ra, dng in thun tng nhanh, gn nh tuyn tnh, vi in p t ln i t nn ta phi ch gi tr dng in thun cc i. y l gi tr ln nht cho php i t lm vic, qu gi tr ny ioots s b nng v hng. V phn ngc, dng in ngc gn nh khng thay i khi tng in p ngc t ln i t. Nhng khi in p ngc t gi tr U.t. (gi l in p nh thng) th i t mt tnh chnh lu kh nng dn in mt chiu, th dng in ngc tng vt l hin tng nh thng i t. Hin tng nh thng dn n lm hng i t tr i t zener s dng ch nh thng n nh in p. Khi s dng i t ta phi da vo cc tham s tnh ca n la chn. Cc tham s tnh c bn ca i t gm c: + in tr ng Ri l in tr ca i t i vi thnh phn xoay chiu ca tn hiu. + in dung ca i t Cd l in dung ca tip xc P-N. + in p ngc cho php + Dng in thun cc i + Khong nhit lm vic. Mt iu rt quan trng khi s dng cc cu kin bn dn l ta phi ch n s nh hng ca nhit ln hot ng ca i t. S nh hng ca nhit ln hot ng ca i t thng qua s ph thuc ca dng in ngc bo ha vo nhit theo hm m v do din th nhit ca cht bn dn cng chu nh hng ca nhit . Theo tnh ton gn ng th gi tr dng in ngc tng gp 2 ln i vi mi mt s tng nhit ln 10 0 C. Chng 3 cn gii thiu v ch ng ca i t, cc kh nng s dng i t trong mch in t v mt s loi i t bn dn thng dng. Chng ta nghin cu v s mch tng dng ca i t v cc ch lm vic ng ca n. Ngoi ra phn cui chng cng gii thiu mt s mch ng dng i t trn thc t.
CU HI N TP.
71
cu kin in t
it bn dn
1. Hy nu cc tham s ca tip xc P-N khi trng thi cn bng? 2. Trnh by v cc hin tng vt l xy ra khi tip xc P-N phn cc thun v phn cc ngc? 3. Trnh by v cu to v nguyn l hot ng ca it bn dn? 4. Hy gii thch v c tuyn Vn-Ampe ca it bn dn? 5. Nu cc tham s tnh ca it bn dn? 6. Trnh by v cc ch ng ca i t bn dn? 7. Trnh by cc c tnh chnh ca it xung v cho bit ngha vt l ca tham s thi gian phc hi chc nng ngt ca it (tp)? 8. Hy tnh cao hng ro th nng ca mt it silic phn cc thun khi nhit 100 0 C ? (bit rng 25 0 C it c phn cc 0,7V). 9. Trong mt tip xc P-N, nng tp cht trong hai phn bn dn P v N l: N A = 1018 cm 3 v N A = 1015 cm 3 . a.Hy tnh nng ht dn thiu s ti bin ca lp ngho ht dn khi phn cc U=0,52V. b. Tnh t s dng in tri ca in t v l trng bn trong vng N. Gi thit rng tip xc P-N lm vic ti nhit phng v ni = 1,5.10 10 cm 3 10. in vo ch trng ca mnh di mt trong cc nhm t sau: Lp tip xc P-N ch ..khi c phn cc thun. a. dn in; b. khng dn in; c. l mt t in; d. l mt in tr
11. Dng in qua lp tip xc P-N lin quan vi in p ngoi t ln n theo cng thc sau: a. I = I0 eU ng / VT 1
b. . I = I0 eU ng / VT + 1
c. I = I0 eU ng / VT 1
d. I = I0 eU ng / VT + 1
TI LIU THAM KHO 1. Gio trnh Cu kin in t v quang in t- Trn Th Cm Hc vin cng ngh BCVT, nm 2002. 2. Electronic Devices and Circuits Jacob Millman, Christos C. Halkias, Mc Graw Hill Book 1987.
72
Cu kin in t
CHNG 4 TRANZITO LNG CC (BJT) GII THIU CHNG. Chng 4 s gii thiu v tranzito lng cc (Bipolar Junction Transistor BJT). y l cu kin bn dn quan trng c 2 lp tip xc P-N v 3 chn in cc. Trong chng s trnh by v nguyn l hot ng ca tranzito lng cc 3 ch cp in phn cc cho n l ch tch cc, ch ngt v ch bo ha. Chng 4 trnh by v cc cch mc c bn ca tranzito lng cc trong cc s mch khuch i l cch mc cc gc chung, cc pht chung v cc gp chung, c im ca tng cch mc. Trong chng 4 ny cn cp n cc phng php phn cc cho tranzito nh phn cc bng dng cc gc, phn cc bng phn p v phn cc bng hi tip. ng thi trong chng ny cng trnh by v cc s tng ng ca tranzito trong ch khuch i tn hiu nh v trnh by v ch chuyn mch ca tranzito. NI DUNG 4.1. CU TO V K HIU CA BJT TRONG S MCH. 4.1.1. Cu to ca BJT loi P-N-P v N-P-N Tranzito lng cc gm c hai tip xc P-N c to nn bi 3 min bn dn loi P v N xp xen k nhau. Nu min bn dn gia l bn dn loi N th ta c tranzito lng cc loi PN-P. Nu min bn dn gia l bn dn loi P th ta c tranzito lng cc loi N-P-N. TE E P N B C B E a- Tranzito loi P-N-P Hnh 4 - 1 : B E b- Tranzito loi N-P-N P TC C E N P B C N TE TC C
a. Tranzito lng cc loi P-N-P (hay tranzito thun) cu to v k hiu trn s mch b. Tranzito N-P-N (hay tranzito ngc) cu to v k hiu
Tranzito c 3 chn cc l: Cc Pht k hiu l ch E (Emitter) l ngun pht ra cc ht ti in trong tranzito. Cc Gc k hiu l ch B (Base) l cc iu khin dng in.. 73
Cu kin in t
Cc Gp k hiu l ch C (Collector) c nhim v thu nhn tt c cc ht dn t phn pht E qua phn gc B ti. - Hai tip xc P-N l tip xc pht-gc k hiu l TE (gi tt l tip xc pht), v tip xc gp-gc k hiu l TC (gi tt l tip xc gp). 4.1.2. Nguyn l lm vic ca tranzito Khi cha cung cp in p ngoi ln cc chn cc ca tranzito th hai tip xc pht TE v gp TC u trng thi cn bng v dng in tng chy qua cc chn cc ca tranzito bng 0. Mun cho tranzito lm vic ta phi cung cp cho cc chn cc ca n mt in p mt chiu thch hp. C ba ch lm vic ca tranzito l: ch tch cc (hay ch khuch i), ch ngt v ch dn bo ha. C hai loi tranzito P-N-P v N-P-N u c nguyn l lm vic ging nhau, ch c chiu ngun in cung cp vo cc chn cc l ngc du nhau. + Ch ngt: Cung cp ngun in sao cho hai tip xc P-N u phn cc ngc. Tranzito c in tr rt ln v ch c mt dng in rt nh chy qua nn tranzito coi nh khng dn in. + Ch dn bo ha: Cung cp ngun in sao cho c hai tip xc P-N u phn cc thun. Tranzito c in tr rt nh v dng in qua n l kh ln. ch ngt v ch dn bo ha, tranzito lm vic nh mt phn t tuyn tnh trong mch in. ch ny tranzito nh mt kha in t v n c s dng trong cc mch xung, cc mch s. + Ch tch cc: Ta cp ngun in sao cho tip xc pht TE phn cc thun, v tip xc gp TC phn cc ngc. ch tch cc, tranzito lm vic vi qu trnh bin i tn hiu dng in, in p, hay cng sut v n c kh nng to dao ng, khuch i tn hiu,... y l ch thng dng ca tranzito trong cc mch in t tng t. 4.2. CC CH LM VIC CA TRANZITO BJT. 4.2.1. Ch tch cc (hay ch khuch i): + Nguyn l hot ng: ch tch cc ta phi cung cp ngun in mt chiu ln cc chn cc sao cho tip xc pht TE phn cc thun v tip xc gp TC phn cc ngc (xem hnh 4-2 a,b,c,d). V d: Ta xt nguyn l lm vic ca tranzito loi P-N-P cn i vi tranzito loi N-P-N c th suy ra da vo nguyn l hot ng ca tranzito loi P-N-P.
74
Cu kin in t
TE E P N B EE a/
TC P C E N
TE P B EC EE b/
TC N C
EC
UCB
Hnh 4 - 2:a v b: Chiu cc ngun in cung cp cho cc chn cc ca tranzito loi P-N-P nvaf N-P-N n lm vic ch tch cc c v d: th di nng lng ca tranzito loi P-N-P Khi tip xc pht phn cc thun, cc ht dn a s l l trng s khuch tn t phn pht sang phn gc, cn cc in t t phn gc khuch tn sang phn pht to nn dng in cc pht IE, ta c: IE = IEn + IEp (4. 1) Trong : IEn - l thnh phn dng in in t cc pht. IEp - l thnh phn dng in l trng cc pht. Cc ht dn ny gp nhau s ti hp. m bo nng cc l trng pht ra ln, ngi ta ch to phn pht c nng tp cht ln hn rt nhiu so vi phn gc. Nh vy ta c: IEp >> IEn y ngi ta a ra tham s gi l hiu sut ca cc pht, k hiu l v c tnh theo cng thc sau: I I Ep (4. 2) = Ep = 0,98 0,995 I E I Ep + I En
Tham s =
I Ep IE
pht E sang cc gc B. Cc l trng khuch tn sang phn gc, mt phn nh ti hp vi cc in t, cn phn ln chng tip tc khuch tn qua phn gc v pha tip xc gp. n tip xc gp, cc l
75
Cu kin in t
trng s chuyn ng tri qua lp tip xc v to nn dng in cc gp ICp. ng thi, qua tip xc gp cn c dng in ngc ICBo (cn gi l dng in r). Nn ta c cng thc tnh dng in cc gp tng l: IC = ICp + ICBo (4. 3) . s l trng b ti hp t trong phn gc, ta ch to phn gc tht mng sao cho b dy ca n WB << LPn - di khuch tn. y ngi ta a ra tham s gi l h s chuyn di dng in IE k hiu l *. Tham s ny ch ra s l trng n c cc gp m khng b ti hp trong phn gc. + H s chuyn di * c xc nh:
* =
(4. 4)
+ H s khuch i dng in cc pht hay cn gi l h s truyn t dng in cc pht v n c tnh theo cng thc sau: I Cp I Cp I Ep = = * (4. 5) = IE I Ep I E c gi tr bng khong 0,90 0,995. Dng in do hin tng ti hp trong lp tip xc pht v trong phn gc tr i dng in ngc ca tip xc gp c gi l dng in cc gc (IB): IB = IEp - ICp - ICBo Quan h gia 3 thnh phn dng in trong tranzito l: IC = IE + ICBo (4. 6) IB = (1 - )IE - ICBo IE = I C + I B UCE IE E IE IC ICBo UEB IB B - + B IC C E+ IE IB UCB IC -C
Hnh 4 - 3: Cc dng in v in p trn cc chn cc ca tranzito loi P-N-P. 4.2.2. Ch ngt: ch ny, ta cung cp ngun in sao cho hai tip xc P-N u c phn cc ngc nn in tr ca tranzito rt ln v qua n ch c dng in ngc rt nh ca tip xc gp I CBo . Do dng in ngc ca tip xc pht I EBo nh hn nhiu so vi I CBo nn mch cc
76
Cu kin in t
E coi nh h. Dng in trong mch cc gc B c gi tr bng dng I CBo nhng ngc du ( I B = I CBo ). Ta c s mch tng ng di y:
EB
RC
ICEo UCE +
RC EC
ICEo UCE +
- EC
a/
b/
Trong nhiu trng hp, ch ngt ca trazito c s dng m khng cn ngun in p gia cc B v E ( E B ) nh m t hnh 4-5 Nh vy, trong c hai trng hp trong hnh 4-5, in p gia cc gp v cc pht UCE s c xc nh: UCE = EC - RC.ICEo EC v UCE = EC - RC.ICEs EC (4 . 7)
4.2.3. Ch dn bo ha: ch ny ta cung cp ngun in mt chiu sao cho hai tip xc P- N u phn cc thun (hnh 4-6). in tr ca hai tip xc TE v TC rt nh nn c th coi nh hai cc pht E v cc gp C c ni tt. Dng in qua tranzito IC kh ln v khng ph thuc vo hot ng ca tranzito. Nh vy, in p gia cc gp v cc pht lun xp x bng 0 (UCE 0), cn dng in chy qua tranzito c tnh bng:
I CS =
EC RC
S mch tng ng ca ch bo ha m t trong hnh (4-6b). Thc t th in p UCE bng khong 0,2V0,4V. Nh vy, hai ch ngt v ch dn bo ha, tranzito lm vic nh mt chuyn mch in t. Kha ng khi tranzito dn bo ha, kha h khi tranzito ch ngt. 77
Cu kin in t
EC IC C B UCE EB UBE E E a/
Hnh 4 - 6 : Ch dn bo ha ca tranzito a. S mch b. S mch tng ng
RC
EC
IC C B
RC
b/
c tuyn truyn t ca tranzito trong cc ch lm vic m t trong hnh 4-7. URa Vng Ngt EC Vng Tch cc Vng Bo ha
0,2 0,4 V 0
UVo
Hnh 4 - 7: c tuyn truyn t ca tranzito 4.3. C TNH QU CA BJT (ch chuyn mch ca tranzito). 4.3.1 Nguyn l lm vic. ch chuyn mch tranzito lm vic nh mt kha in t, ngha l n lm vic ch ngt v ch bo ha. S nguyn l ca chuyn mch dng tranzito m t trong hnh 4-8. Dng in ICS (bo ho) c tnh theo cng thc: E U CEs (bo ha ) I CS = C (4 . 8) RC
RC IC
IB IB1 0 + IB2
IC b/ t 78
Dn IB
EC
1 RC
Cu kin in t
i vi tranzito, U CEs (bo ha ) = 0,2V 0,4 V nn trong biu thc (4. 8) c th b qua. Do , dng in cc gc nh nht IB1 cn thit iu khin cho tranzito dn bo ho l:
I B1
i CS EC dc dc R C
(4 . 9)
4.3.2. Cc tham s ca BJT chuyn mch. Tham s quan trng ca BJT chuyn mch l thi gian chuyn t trng thi Dn sang trng thi Kha v gi l thi gian chuyn mch. Thi gian chuyn mch xc nh bi cc yu t sau: - Thi gian tr (td): l khong thi gian t khi tc ng ln u vo mt xung cho n khi dng in u ra t 10% gi tr dng in bo ho ca n. Ngha l (IC=0,1 ICS). - Thi gian ln (tr) v thi gian xung (tf): + Thi gian ln (tr): l khong thi gian dng in ra IC tng t 10% n 90% dng in bo ho (ICS). + Dng in xung (tf): l khong thi gian dng in ra IC gim t 90% n cn 10% dng in bo ho (ICS). - Thi gian tn ng: (hay thi gian phc hi chc nng ngt) tp: l khong thi gian k t khi cp mt dng in m IB cho n khi dng in ra IC gim xung cn 90% dng in bo ho ICS. Thi gian tp l tham s cc k quan trng trong vic gii hn tc chuyn mch ca tranzito. N l thi gian cn thit gii to cc ht dn thiu s trong phn gc v phn gp. Gi dng IBA l dng in cc gc a tranzito sang trng thi bo ho, ta c:
I BA =
EC dc .R C
(4 . 10)
t S = S ln
I B1 I B 2 I BA I B 2
79
Cu kin in t
trong : S - thi gian sng ca ht thiu s trong phn gc v n thng c cho i vi tng loi tranzito chuyn mch.
4.4. CC CCH MC CA TRANZITO BJT TRONG S KHUCH I.
ivo uvo E
Mng 4 cc C B
Trong cc mch in, tranzito c xem nh mt mng 4 cc: tn hiu c a vo gia hai chn cc v tn hiu ly ra cng gia hai chn cc (xem hnh 4-9). Tranzito l linh kin bn dn c 3 chn cc nn khi s dng ta phi t mt chn cc ln dy chung ca mch vo v mch ra. Ta c th chn mt trong 3 chn cc lm cc chung cho mch vo v mch ra. Do , tranzito c 3 cch mc c bn l mch cc pht chung (CE), mch cc gc chung (CB), v mch cc gp chung (CC).
4.4.1. S mc gc chung: S mch mc cc gc chung m t trong hnh 4-10. Trong s mch c: + EE , EC l ngun cung cp mt chiu cho tranzito loi P-N-P trong mch. + RE - in tr nh thin cho tranzito. RE c nhim v lm st bt mt phn in p ngun EE m bo cho tip xc pht c phn cc thun vi in p phn cc UEB 0,6 V cho tranzito Silic, v UEB 0,2V cho tranzito Gecmani. ng thi tn hiu vo s h trn RE a vo tranzito. + RC - in tr gnh c nhim v to st p thnh phn dng xoay chiu ca tn hiu a ra mch sau v a in p t m ngun EC ln cc gp m bo cho tip xc gp c phn cc ngc. + T in C1 , C2 gi l t lin lc c nhim v dn tn hiu vo mch v dn tn hiu ra mch sau.
80
Cu kin in t
Cc gc B ca tranzito trong s c ni t. Nh vy, tn hiu a vo gia cc pht v cc gc. Tn hiu ly ra gia cc gp v cc gc nn cc gc B l chn cc chung ca mch vo v mch ra. - Ta gi l s mc cc gc chung. Trong mch c cc thnh phn dng in v in p sau: IE gi l dng in trn mch vo. IC gi l dng in trn mch ra. UEB gi l in p trn mch vo UCB gi l in p trn mch ra Mi quan h gia cc dng in v in p trn cc chn cc c m t thng qua cc h c tuyn tnh. C hai h c tuyn chnh l : H c tuyn vo: UEB = f1(UCB, IE) H c tuyn ra: IC = f2 (UCB, IE)
H c tuyn vo: c tuyn vo m t mi quan h gia in p vo v dng in vo nh sau: UEB = f1(IE) khi UCB = const. Xt trng hp i vi tranzito lng cc Gecmani loi P-N-P. Khi cc gp h th c tuyn vo chnh l c tuyn Vn-Ampe ca tip xc P-N phn cc thun nn ta c:
I E = I0 ( e
U EB VT
1)
81
Cu kin in t
UEB (V) 0,6 0,4 0,2 0 10 20 30 UCB = 0V UCB= -10V UCB= - 20V 40 IE (mA) UCB h
Khi UCB 0, c tuyn x dch rt t chng t in p trn cc gp t nh hng n dng in qua tip xc pht.
H c tuyn ra: c tuyn ra biu th mi quan h gia dng in trn mch cc gp vi in p trn mch cc gp. Ta c mi quan h sau: IC = f2(UCB) khi IE = const. Biu thc tnh dng in trn cc gp IC nh sau: IC = IE + ICBo
IC (mA) Vng tch cc 40 30 Vng dn bo ha 20 (IE3 - IE2) 10 IE5 = 40mA IE4 = 30mA IE3 = 20mA IE2 = 10mA IE1= 0 UCB (V)
I E 2
0 -2
-8
+ Khi IE1 = 0 (khi cc pht h mch): c tuyn ra chnh l c tuyn Vn-Ampe ca tip xc gp phn cc ngc. Do vy, dng in cc gp IC = ICBo. + Khi IE2 > 0 : l khi tip xc pht c phn cc thun th dng in cc gp s l: IC = IE2 + ICBo 82
Cu kin in t
Khi UCB > 0 trong khi UEB > 0 tranzito lm vic ch bo ha nn s c dng in thun ca tip xc gp chy ngc chiu vi thnh phn dng in thun t cc pht sang (IE2), do vy, dng in tng qua tip xc gp gim nhanh n 0 v sau tng nhanh nu UCB > 0 tng tip tc.
Cc c im ca s mc cc gc chung: Tn hiu vo v tn hiu ra ng pha nhau Tr khng vo ZV nh khong vi chc n vi trm m 1 30 300 ZVo = S Tr khng ra ln Zra = RC = 100 K 1 M H s khuch i dng in cc pht I = C < 1 ( 0,95 0,999) IE
Nh vy, tranzito trong s mc cc gc chung khng c khuch i dng in. H s khuch i in p: Z ganh I C Z ganh U ra (4 . 11) Ku = = U vao I E Z vao Z vao
H s khuch i in p ph thuc vo in tr gnh. Khi Zgnh Zra th Ku c tr s khong t vi trm vi nghn ln. - H s khuch i cng sut c th t ti tr s hng trm ln. - Dng in r ICBo nh (khong t vi chc nA n vi A i vi tranzito Silic, v n vi chc A i vi tranzito Gecmani). - Tn s lm vic gii hn cao v c in dung thng ng nh. S mch mc cc gc chung c n nh v nhit cao v tn s lm vic gii hn cao. Mch thng c dng di tn s lm vic cao nh cc tng dao ng ni ca my thu thanh, cc tng tin khuch i m tn ca my tng m, hoc tng khuch i cng sut y ko.
4.4.2. S mc cc pht chung: S mch: (Xem hnh 4-13)
83
Cu kin in t
IC C C1 Mch vo B
IB UBE RB E IE
+
EB
+
EC
Trong s mch gm c cc phn t sau: +/ EE , EC - Ngun in cung cp mt chiu cho tranzito loi P-N-P. +/ RB - in tr nh thin +/ RC - in tr ti +/ T in C1 v C2 l t lin lc. Cc cu kin ny c nhim v trong mch in tng t nh s mc cc gc chung. Nh vy, tn hiu a vo gia cc gc v cc pht, tn hiu c ly ra t gia cc gp v cc pht. Do , cc pht l chn cc chung ca mch vo v mch ra v ta c s mc cc pht chung. Chiu ca cc thnh phn dng in v in p trn cc chn cc cu tranzito c m t hnh 4-13. Trong s mc pht chung c dng vo l IB, dng ra l IC, in p vo l UBE, in p ra l UCE.
c im ca s mc cc pht chung: - Tn hiu vo v tn hiu ra ngc pha nhau - Tr khng vo nh nhng ln hn so vi tr khng vo trong s mc cc gc chung: Zvo = rBE = 200 2000 - Tr khng ra ln nhng nh hn so vi tr khng ra trong s mc cc gc chung: Zra = RC // rCE = 20K 100K - H s khuch i dng in cc gc l t s gia dng in ra vi dng in vo, ta c: IE I (4 . 12) = C = = IB (1 - )I E 1
c tr s t vi chc vi trm ln (cn k hiu l hFE). H s khuch i in p: U ra Ku = = - S (RC// rCE) U vao Ku c th t ti tr s t hng ngn chc ngn ln. 84
(4 . 13)
Cu kin in t
Ku c th c tr s t vi ngn ln n chc ngn ln. - Dng in r cc gp ICEo nh nhng ln hn trong s mc cc gc chung - Tn s lm vic gii hn tng i cao nhng thp hn so vi s mc cc gc chung v in dung thng ng ln hn. - S mch mc cc pht chung c s dng rng ri do c h s khuch i , Ku, Kp rt ln. ng thi mch kh n nh v nhit v c tn s lm vic gii hn kh cao. Ngoi ra, mch c tr khng vo v tr khng ra khng chnh lch nhiu nn trong vic ghp cc mch vi nhau, ta c th dng kiu ghp bng in tr v t in (ghp RC) rt n gin trong tnh ton li n gin trong lp rp v gi thnh r. Cc c trng tnh v cc tham s trong ch tn hiu nh: nghin cu mi quan h gia cc dng in v in p trn cc in cc ca tranzito trong s mc cc pht chung, ta c cc h c tuyn nh sau: H c tuyn vo: UBE = f1(UCE, IB) H c tuyn ra: IC = f2 (UCE, IB) H c tuyn vo tnh: c tuyn vo tnh m t mi quan h gia in p vo UBE vi dng in vo IB. UBE = f1(IB) khi UCE = const. Ta c cng thc tnh dng in vo IB bng: IB = (1- )IE - ICBo v h c tuyn vo c m t trong hnh (4 - 14) Do dng in IE tng theo qui lut hm s m vi in p UBE nn dng in cc gc IB cng s tng theo qui lut hm s m vi in p UBE. Trn h c tuyn vo ta thy in p UCE t nh hng ln dng in IB. UBE (V) -0,6 -0,5 -0,4 -0,3 -0,2 -0,1 0 0,1 0,2 0,3 0,4
UCE = -10V UCE = -5V UCE = -2V UCE = - 0,1V UCE = 0V IB (mA)
Hnh 4 - 14: c tuyn vo tnh ca tranzito Ge loi P-N-P trong s cc pht chung H c tuyn ra tnh: c tuyn ra biu th mi quan h gia dng in trn mch ra IC v in p trn mch ra UCE. Ta c hm biu th quan h ny: IC = f (UCE) khi dng in vo IB =const. V cng thc tnh dng in cc gp l:
85
Cu kin in t
(4 . 14)
(4 . 15) IC = IB + ( + 1)ICBo Trong gi l h s khuch i dng in cc gc (thng c k hiu l hFE). y l biu thc biu th mi quan h gia dng in iu khin v dng in b iu khin trong s mc cc pht chung. t0 = 250C IC (mA) Vng tch cc 40 UCE<UBE 30 Pttmax Vng dn bo ha 20 IB8 =0,35mA IB7 =0,3mA IB6=0,25mA IB5=0,2mA IB4=0,1mA IB3=0,05mA IB2=0 IB1= - ICBo -10 UCE (V)
IB4
10 0 -2 ICBo -4 (1+)ICBo -6 -8 Vng ngt
Ta thy dng in IC c gi tr cc tiu khi c hai tip xc pht TE v tip xc gp TC u phn cc ngc, dng in IB = - ICBo nn IC = ICbo v tranzito hot ng trong vng ngt. Khi IB > 0, dng in ra c tnh theo cng thc: IC = IB + ( + 1)ICBo (4 . 16) Nu tng in p trn mch ra UCE ln th c tuyn ra khng nm ngang m hi dc nghing. Khi gim gi tr in p trn mch ra UCE< UBE th tip xc gp TC cng c phn cc thun. Lc ny tranzito lm vic ch bo ha.
4.4.3. S mc cc gp chung (hay cn gi l b lp cc pht): S mch m t trong hnh 4- 16: Trong s gm c: EB , EC - Ngun cung cp mt chiu; RB - in tr nh thin; RE - in tr gnh v c mc mch cc pht; t in C1 , C2 l t lin lc. Nhim v ca cc linh kin trong mch cng ging nh s mc gc chung.
86
Cu kin in t
Trong mch, tn hiu a vo gia cc gc v cc gp, tn hiu ly ra trn RE t gia cc pht v cc gp, nn cc gp l chn cc chung ca mch vo v mch ra. V vy, ta c s mc cc gp chung.
+
EB
+
EC C
Khi cp ngun, dng in IE xut pht t dng ngun EB qua in tr ti RE v cc pht v n lp tip xc pht TE. Ti y, n chia thnh hai thnh phn l dng in cc gc IB chy qua RB v t v thnh phn dng in cc gp IC chy qua cc gp xung t.
c im ca s mc cc gp chung: - Tn hiu vo v tn hiu ra ng pha - Tr khng vo ln Zvo = RE = 20 K 500 K (c th ti hng M ) - Tr khng ra nh 1 R ngun ) = 50 5K Zra = RE // ( S
(4 . 17)
(4 . 18)
H s khuch i in p: U ra U BC U BE U ra = = Ku = U BC U BC U vao
< 1
(4 . 19)
(4 . 20)
V >>1 nn h s khuch i dng in trong s mc cc gp chung tng ng vi h s khuch i dng in ca s mc cc pht chung. - H s khuch i cng sut Kp c tr s t vi chc ln n vi trm ln. - Dng in r c tr s tng ng nh s mc cc pht chung. - Tn s lm vic gii hn cng c gi tr ging nh s mc cc pht chung. c im c bn ca s mc cc gp chung l c tr khng vo rt ln v tr khng Z ra rt nh ( vao = hng ngn ln) nn n c dng nh mt b bin i tr khng. Z ra
87
Cu kin in t
Trn thc t, s mc gp chung t c dng, ngi ta ch s dng mch ny phi hp tr khng gia mt mch c tr khng ra cao vi mch c tr khng vo thp. Cc c tuyn v tham s ca s mc cc gp chung cng tng t nh s mc cc pht chung, do vy ta s khng xem xt thm na.
4.4.4. S Dacling- tn : S Dacling- tn gm c 2 tranzito u theo kiu cc gp chung (CC) v n c coi nh mt tranzito mi vi cc chn cc: E' , B' , C' (xem hnh 4-17).
Hnh 4 - 17: S Daclinh- tn: (a). S mch; (b). S thay th Cc tham s ca s : H s khuch i dng in: ' = T1* T2 Tr khng vo:
Zvo = rB'E' = 2rBE1 = 2' h dn: S' = Tr khng ra: Zra = rC'E' = IC ' 2VT
(4 . 23)
2 rCE2 3
(4 . 24)
4.5. PHN CC CHO TRANZITO LNG CC. 4.5.1. Khi nim phn cc cho cc ch lm vic ca tranzito: Phn cc cho tranzito l vic cung cp ngun in mt chiu vo cc chn cc sao cho tranzito lm vic ng ch (ngt, bo ha hay tch cc) v cc tham s ca tranzito khng vt qu cc gi tr gii hn (ICmax, UCemax, UCbmax, UEbmax, Pttmax,tn s gii hn) nh ch ra hnh 4-18. ch ngt, ta ch cn cp ngun in sao cho hai tip xc P-N ca tranzito u phn cc ngc. ch bo ha, cp in sao cho hai tip xc P-N u phn cc thun hoc
88
Cu kin in t
sao cho in p UCE = (0,20,4)V. Ch ch tch cc l vic phn cc cho tranzito phc tp v cn ch hn. Chng ta s lm quen vi mt s khi nim trong vic phn cc cho tranzito nh im lm vic tnh, ng ti mt chiu (dc), ng ti xoay chiu (ac) im lm vic tnh trn cc h c tuyn ca tranzito l im m ti cc hm ca tranzito hu nh tuyn tnh khi n lm vic trong vng ch tch cc. xc lp im lm vic nht thit phi cung cp cho tranzito mt ngun in p mt chiu v dng in mt chiu t bn ngoi. Ta chn im lm vic tnh Q sao cho khi tn hiu xoay chiu thay i theo thi gian (ut) c t ln li vo (cc B) th trn li ra (cc C) ta nhn c mt tn hiu (in p hoc dng in) c cng dng sng vi tn hiu trn li vo .
IC (mA) IC max
IB = 160A
ng ti AC E CC RC ICQ
PC max
Q2
Q1
UCQ ng ti dc
ECC
Hnh 4 - 18: H c tuyn ra ca s cc pht chung v cc ng ti mt chiu (dc) v xoay chiu (ac).
Nu tn hiu ra khng ti to li mt cch trung thc tn hiu vo th im lm vic chn khng thch hp v cn phi di chuyn n mt v tr mi trn h c tuyn ra. Cc ng ti mt chiu (dc) v xoay chiu (ac): Gi s rng chng ta chn in tr RC sao cho ng ti mt chiu (dc) nh ch ra trong hnh v 4-18 v nu Rti = ta c th chn im lm vic tnh Q1 trung tm ca ng ti dc vi cc gi tr in p v dng tnh l UCQ, ICQ v IBQ. Nu Rti th ta c mt ng ti xoay chiu (ac) p ng cho mt ti l R'ti = Rti // RC c v i qua im lm vic Q1. Khi c tn hiu xoay chiu a n li vo v trn mch ra c u ti, th im lm vic ng s xoay xung quanh im lm vic tnh Q v cc gi tr dng in xoay chiu v in p xoay chiu s dao ng xung quanh gi tr dng in v in p mt chiu . phn cc cho cc tranzito lm vic ta c th dng hai ngun in mt chiu hoc dng mt ngun mch n gin v kinh t hn. Thc t ngi ta thng dng mt ngun in cung cp v s dng cc in tr dn in p v cc chn cc ca tranzito phn cc m ta hay gi l mch nh thin.
4.5.2. Phn cc kiu c nh (hay mch nh thin bng dng cc gc) : S mch in nh hnh 4-19. Trong s dng tranzito loi N-P-N nn c: in tr RB, gi l in tr nh thin, c u t dng ngun EC v cc gc phn cc thun cho tip xc pht - gc.
89
Cu kin in t
in tr RC, gi l ti, c nhim v dn in p t dng ngun EC v cc gp sao cho tip xc gp - gc phn cc ngc. Dng in IC chy t dng ngun EC qua RC v m ngun EC. Dng in IB chy t dng ngun EC qua RB v m ngun EC. +EC IC RC RB C1 ui Tn hiu vo B UBE IE E Rti IB C Tn hiu ra C2 u0
Trn ng ti dc ta chn im lm vic thch hp vi iu kin tn hiu u vo c gi tr dng in cc gc khng vt qu gi tr dng in IB c tnh theo cng thc sau: E U BE (4 . 25) IB = C RB Theo cng thc trn, c ngun in ECC l c nh, in p UBE chn bng 0,2V cho tranzito gecmani v 0,6V cho tranzito silic nn dng IB l c nh. Trong trng hp mun thay i dng in IB, tc l thay i im lm vic tnh Q th ta thay i tr s in tr RB. V dng IB chn l mt hng s nn s mch trn (hnh 4-19) c gi l mch phn cc kiu c nh hay mch phn cc nh dng cc gc. Dng IB c gi l dng in nh thin.
n nh ca mch nh thin. Khi tranzito hot ng, cc tham s ca mch s thay i do nhiu nguyn nhn, c bit l do nhit mi trng thay i. V vy, vic n nh im lm vic Q chn l rt cn thit. Ta gi thit rng tranzito trong hnh (4-19) c thay bng mt tranzito khc cng loi nhng c h s khuch i ln hn nh ch ra trong hnh (4- 20), v v IB gi khng i ti IB2 bng mch phn cc bn ngoi, s dn n vic im lm vic Q1 phi di chuyn n Q2. im lm vic mi ny c th khng tha mn hon ton. c bit n c th lm cho tranzito chuyn sang ch bo ha. Lc ny chng ta phi thay i dng in IB m bo ch lm vic cn thit cho tranzito.
Cu kin in t
n nh nhit cho tranzito: Vn quan trng th hai gy nh hng n s phn cc ca tranzito l s thay i nhit . Nh ta bit dng in ngc bo ha ICBo ph thuc nhiu vo nhit , iu ny c th gy kh khn cho vic s dng tranzito. Ngay c khi im lm vic tnh c xc nh vng ch tch cc th do nh hng ca nhit n vn c th chuyn sang ch bo ha. Trong hnh (4- 21) ch ra h c tuyn ra ca tranzito 2N708 ti nhit +250C v +1000C. Ta thy r rng hu nh n lm vic ch bo ha ti nhit +1000C mc d n c phn cc gia vng ch tch cc ti +250C.
IC (mA) 50 40 30 20 10 0 2 4
t0 = 250C IB=1,0
IC (mA) 50
UCE(v)
Hnh 4- 21: H c tuyn ra t0 = +250C (a) v +1000C (b) ca tranzito loi N-P-N 2N708 H s n nh S: H s n nh S l tc thay i ca dng in cc gp so vi s thay i ca dng in ngc bo ha gi cho h s khuch i v in p UBE khng i, ta c: IC IC (4 . 26) S = I CBo I CBo
Trong ch tch cc, mi quan h c bn gia IC v IB c cho bi cng thc: IC = IB + ( +1)ICBo Nu ly o hm cng thc trn theo IC v xem xt l hng s theo IC, th ta c: dI B 1+ + 1= dI C S 91
Cu kin in t
S =
1+ dI B 1- dI C
(4 . 27)
i vi s mch nh thin kiu c nh, IB khng ph thuc vo IC, nn h s n nh c tnh: (4 . 28) S = +1 Gi tr S cng ln c ngha l mch cng khng n nh v nhit. Theo nh ngha y th h s n nh S khng th nh hn 1. Mun duy tr s n nh im lm vic tnh Q ta phi gi cho dng in ICQ v in p UCEQ khng i. K thut thng c s dng n nh im lm vic tnh c th phn chia thnh 2 loi: - K thut n nh - K thut b K thut n nh l ta s dng cc mch phn cc in tr m cho php IB thay i sao cho gi c IC l khng i mt cch tng i vi s thay i ca ICBo, v UBE. K thut b l s dng cc linh kin nhy nhit nh it, tranzito, tecmixto, v.v.. Cc linh kin ny cung cp mt in p b v dng in b gi cho im lm vic n nh. Trong cc phn tip theo, k thut n nh cho mch nh thin c th hin sao cho gi tr h s S gim xung v do to ra dng in cc gp IC t ph thuc vo dng in ICBo. 4.5.3. Mch nh thin phn p : S mch cho trn hnh 4-22. +EC IP.p RC R1 IB B UCE Mch vo R2 UBE E UB RE N IE CE C Mch ra IC
Hnh 4 - 22: S mch nh thin phn p Trong mch, hai in tr R1 v R2 ni tip nhau v u trc tip gia hai cc ca ngun cung cp EC s to nn mch phn p, dng in phn p IP. p chy qua R1 v R2 khng ph thuc vo s bin i theo nhit ca cc dng in v in p trn cc chn cc ca tranzito. Do , st p do dng phn p to ra trn R2 cng khng ph thuc vo hot ng ca tranzito. in p trn cc gc chnh l st p trn in tr R2 do dng in phn p to nn, vy ta c: UB = IP.p R2
92
Cu kin in t
UB =
E C . R2 R1 + R2
(4 . 29)
Nu ta thay s mch phn cc hnh (4- 22) bng s mch phn cc dng hai ngun cung cp mt chiu l UB cho mch cc gc v EC cho mch cc gp nh hnh (4- 23) th in tr RB l in tr tng ng ca hai in tr R1 v R2 mc song song, ta c: R 2 R1 (4 . 30) RB = R 2 + R1
H s n nh S : Trn s mch hnh 4- 23, theo nh lut in p vng ca Kic xp mch cc gc, ta
Nu xt UB v UBE khng ph thuc vo dng in IC, ta c th tnh o hm cng thc (4.31) theo IC c: dI B RE =(4 . 32) dI C RE + RB Thay (4.32) vo cng thc (4.27) kt qu ta c: 1+ S = RE 1+ RE + RB
RB RE S = (1 + ) R 1+ + B RE 1+
(4 . 33)
93
Cu kin in t
+ Nu gi tr ca cc linh kin trong s mch cho trc, th im lm vic tnh c xc nh nh sau: Theo nh lut Kic Xp cho mch cc gp ta c: (4 . 34) - EC + IC (RC + RE) + IB RE + UCE = 0 T cng thc (4.34) ta c th xc nh c im lm vic tnh Q vi cc gi tr dng in IC v UCE tng ng. + Nu cc linh kin trong s mch khng cho trc th vic xc nh im lm vic tnh ca tranzito c thc hin nh trng hp mch phn cc dng hai ngun cung cp c lp vi cc tr s: ECR 2 R 1R 2 v RB = UB = R1 + R 2 R1 + R 2 Gi s dng in IB << IP.p v coi nh IB 0 th: EC IP.p = R1 + R 2 UE = IE RE = UB - UBE - IB RB v dng in cc gp l: U B U BE IC IE = RE in p gia cc gp v cc pht l: UCE = EC - IC RC - IE RE 4.5.4. Mch phn cc bng hi tip: S mch: Hnh 4-24. Trong s , in tr RB c gi l in tr nh thin hoc in tr hi tip. N dn mt phn in p t mch ra v mch vo phn cc cho tip xc pht TE, v in p phn cc l: UBE = UCE - IB RB . +EC RB C1 IB RC IB IC UCE Mch ra IE a/ b/ IC+IB C2 ura B C' E Mch UBE vo RB1 RB RB2 C
Hnh 4 - 24: a- S mch nh thin hi tip m in p b- Ph hhnh n ch(4hi tip thnh pht n ph tn hi u trnh xoay sau: chiu H s n nh Sng cphp a s 24) c tnh ng - EC + ( IB + IC) RC + IB RB + UBE = 0 (4 . 35) T c: E I R U BE (4 . 36) IB = C C C RC + RB
Cu kin in t
RC dI B =dI C RC + RB
(4 . 37)
Thay (4.37) vo cng thc (4.27), ta c cng thc tnh h s n nh S: +1 (4 . 38) S = RC 1+ RB + RC Gi tr ny ca h s S s nh hn ( + 1) trong s mch nh thin kiu c nh, v vy ci thin c h s n nh ca mch.
Phn tch s mch: Nu gi tr ca cc linh kin trong s mch c bit, th im lm vic tnh Q c xc nh nh sau: ng vi mi mt gi tr ca dng in IB cho, ta c th tnh c in p trn cc gp theo cng thc sau: UCE = IB RB + UBE (4 . 36) Dng in cc gp IC c th xc nh bng cng thc: [E C - U BE + (R C + R B ) I CBo ] (4 . 37) IC = RC + RB Phng php loi b hin tng hi tip thnh phn tn hiu: Theo s mch nh thin bng hi tip m in p ny, th trn in tr RB khng ch c thnh phn mt chiu c hi tip m c c thnh phn xoay chiu ca tn hiu. khc phc hin tng ny ta thay in tr RB bng 2 in tr RB1 v RB2 u ni tip vi nhau, v im ni gia chng c u qua mt t in C' xung t (hnh 4- 24b). Nh vy, ti tn s lm vic thnh phn tn hiu hi tip v s qua t C' xung t nn khng gy nh hng cho mch.
Trong bng 4.1 v 4.2 cho ta bit mt s cc tham s ca tranzito silic v gecmani cc nhit khc nhau.
95
Cu kin in t
T ICBo UBE
Bng 4.1: Cc tham s ca tranzito silic tiu biu. ( C) - 65 +25 -3 (nA) 1,95. 10 1,0 25 55 (V) 0,78 0,60
0
T ICBo UBE
Bng 4.2: Cc tham s ca tranzito gecmani tiu biu. ( C) - 65 +25 -3 1,95 . 10 1,0 (A) 20 55 (V) 0,38 0,20
0
+75 32 90 0,10
4.5.5. So snh 3 phng php phn cc Trong 3 phng php phn cc va nghin cu ta thy phng php phn cc c nh c s mch v tnh ton cc tham s ca mch n gin nhng n nh im lm vic tnh ca mch km nht. Phng php phn cc dng hi tip ci thin c n nh ch lm vic ca mch nhng do mch hi tip c th hi tip c thnh phn tn hiu, lm h s khuch i ca mch gim. ng thi, nu in tr RC c tr s nh th hu nh mch khng ci thin c n nh so vi phng php c nh. Phng php phn cc phn p l phng php c n nh tt nht, ngay c khi in tr RC = 0. Do vy y l phng php c s dng nhiu nht. 4.6. S TNG NG CA BJT CH KHUCH I TN HIU NH TN S THP.
gii cc bi ton c lin quan n cc linh kin tch cc, ta phi a chng v cc dng mch in tng ng. C nhiu kh nng xy dng s mch tng ng, y chng ta s xem xt mt s thng dng nht l s tng ng kiu hn hp.
4.6.1. S mng 4 cc dng cho BJT. Hnh 4-25 biu din mt mng 4 cc dng cho tranzito lng cc: trn mch vo c dng in vo i1 v in p vo u1; trn mch ra c dng in ra i2 v in p ra u2. Chng ta c th chn 2 trong 4 i lng ny l cc bin c lp v biu din 2 bin cn li theo cc bin c lp chn.
i1 Ca vo u1
i2 Mng 4 cc (BJT) Ca ra u2
96
Cu kin in t
Nu chn dng in i1 v in p u2 l cc bin c lp v nu 2 mch vo v ra l tuyn tnh th ta c th vit: u1 = h11 i1 + h12 u2 (4 . 38) (4 . 39) i2 = h21 i1 + h22 u2 Cc i lng h11, h12, h21, h22 c gi l cc tham s h hoc cc tham s hn hp v tt c chng khng c cng th nguyn. T cc cng thc (4. 38) v (4. 39) ta xc nh cc tham s h nh sau: h11 =
u1 : Tr khng vo khi ngn mch ra (). i1 u = 0 2 u1 u 2 i =0 1 i2 i 1 u =0 2 : khuch i in p nghch o (khng th nguyn). h21 = : H s khuch i dng in. (khng th nguyn). h22 = i2 : h dn li ra khi h mch vo (mA/V). u 2 i =0 1
h12 =
K hiu: Cc k hiu thm vo di y c qui c theo tiu chun ca IEEE: i = 11 = u vo o = 22= u ra f = 21 = truyn dn thun r = 12 = truyn dn ngc Trong trng hp ca tranzito, c thm cc k hiu (b, e, hoc c) vo ch cc kiu s mc tranzito. V d: hib = h11b = Tr khng vo s mc gc chung. hfe = h21e = H s khuch i thun dng in ngn mch trong s mc cc pht chung. V linh kin m t bng cng thc (4. 38) v (4. 39) c gi thit l khng cha cc phn t khng, nn 4 tham s h11, h12, h21, h22 l cc s thc v cc in p cng nh dng in u1, u2, i1, i2 l cc hm ca thi gian. Mch hn hp cho mt linh kin bt k c trng bng cng thc (4.38) v (4.39) c biu din hnh 4- 26.
i1 + u1 h12u2 h11 i2
+
h21i1 h22 u2
Hnh 4 - 26: S tng ng hn hp cho mng 2 ca ca hnh (4- 25). Cc tham s h21 v h12 khng c th nguyn.
97
Cu kin in t
M hnh tng ng ca tranzito y c cho trong mi quan h ca cc tham s h. Cc tham s h c cc nh sn xut xc nh cho cc tranzito. nhn c m hnh tng ng hn hp cho tranzito, ta nghin cu s mc cc E chung nh hnh 4- 27. ic C ib
+
uc
RC EC
+
ub
B E
Cc bin ib, ic, ub, v uc biu th tng cc dng in v in p tc thi. y ta chn dng in ib v in p uc l cc bin c lp v ub, ic l cc hm nh sau: ub = f1(ib, uc) (4 . 40) ic = f2(ib, uc) (4 . 41) M rng cng thc (4. 40) v (4. 41) bao quanh im lm vic tnh IB, UC, tng t ta c: uB = iC =
f1 f1 iB + uC iB U uC I C B f2 f2 iB + uC iB U uC I C B
(4 . 42)
(4 . 43)
Nh s biu th cc ch s ca hai cng thc trn, in p cc gp UC hoc dng in cc gc IB phi gi l hng s. Cc i lng uB, uC, iB v iC biu th cc tn hiu nh ca in p v dng in trn cc gc v cc gp. Da vo cc k hiu ta c th vit: ub = hieib + hreuc (4 . 44) ic = hfeib + hoeuc (4 . 45) Trong : ib, ub, uc v ic : l dng in v in p tc thi trn cc chn cc B v C ca tranzito. Ta c: hie =
f1 uB = iB iB U C f2 iC = iB iB U C
hre =
f1 uB = uC uC I B f2 iC = uC uC I B
(4 . 46)
hfe =
hoe =
(4 . 47)
Xut pht t cng thc (4. 46) v (4. 47) ta xc nh cc tham s h ca tranzito trong s mc E chung. Ba s mc tranzito: 98
Cu kin in t
Trong bng 4.3 trnh by tm tt ba cch mc tranzito cng cc s tng ng hn hp v cc cng thc tnh dng in i v in p u thch hp vi tng s . Mch in v cng thc trong bng (4.3) c gi tr cho c tranzito loi N-P-N v c P-NP v khng ph thuc vo loi ca ti hoc cch phn cc.
Bng 4.3: Cc cch mc tranzito v m hnh tng ng hn hp ca chng S mch M hnh tng ng hn hp Cng thc u, i
CE ib B ub E CC ib B ub C CB E ie ue ib B B ic uc E ie ic ie ic
C uc
CE hfeib
ic C hoe uc E
CC hfcib
ie hoc
E ue
99
Cu kin in t
Bng 4.4: Cc cng thc chuyn i gn ng cho cc tham s h ca tranzito (Cc s liu cho trong bng l i vi mt tranzito tiu chun).
CE hie hre hfe hoe hib hrb hfb hob hic hrc hfc hoc 1100 2,5.10-4 50 25 A/ V h ie 1 + h fe
h ie h oe h re 1 - h fe h rc
CB h ib 1 - h fb h ib h ob h rb 1 + h fb h fb 1 + h fb
h ic h oc 1 h fc
h fe 1 + h fe
1 + h fc h fc
h oc h fc
1100 1 - 51 25 A/ V
h ob 1 + h fb
Tranzito lng cc l phn t tch cc c s dng rng ri trong cc mch in t. Chng c dng trong hu ht cc mch in t v gi nhiu chc nng ch yu ca mch. Nhng ng dng thng thng ca tranzito lng cc l khuch i, to dao ng hnh sin, xung, n p, chuyn mch in t y ta s xem xt mt s v d v ng dng ca chng. - Khuch i: Tranzito c dng trong cc mch khuch i mt chiu (dc), khuch i tn hiu (ac), mch khuch i vi sai, cc mch khuch i c bit, mch n p V d: mch khuch i micro dng cho my tng m nh hnh 4-28 100
Cu kin in t
56K
UCC=24V
1,5K 47K 10F 68K 10F 100F 390 68K 10F Ura
15K
3,9K
220 22K
Trong mch cc in tr hi tip R=22K, R=68K (hi tip t cc gp T2 v) v R=220 xc nh h s khuch i ca mch: 68 K // 22 K 16,7 K KU = = = 75 220 0,22 K Cc in tr hi tip mt chiu R = 3,9K v R = 68K t T2 v n nh ch lm vic ca mch. - Mch to dao ng sng hnh sin dng trong radio (Hnh 4-29)
5pF 120 2pF
Ura
1K 8,2K
1000pF
30pF
3,3K
UCC
120
Hnh 4 29: Mch to dao ng hnh sin dng BJT-SE3001 Do tn s hot ng ca mch trn 100MHz nn tranzito c mc theo s cc gc chung. Khung cng hng gm c mt cun cm v hai t in. t in 5pF l t hi tip duy tr dao ng. - Mch a hi:
101
Cu kin in t
RC1 Ura1 T1
RB2 C1
RB1
C2
UB1
UB2
Mch a hi t dao ng to xung vung. Trng thi cn bng ca mch (mt tranzito m v mt tranzito kha) ch n nh trong mt thi gian hn ch no , ri t ng lt sang trng thi kia v ngc li (hai tranzito thay nhau thng, tt). Trn li ra ta ly c chui xung vung c tn s dao ng c tnh gn ng theo cng thc: 1 1 (4. 48) f = = T 0,69 RB 2 C1 + 0,69 RB1C 2
TM TT Chng 4 trnh by v cu to v nguyn l hot ng ca tranzito lng cc (BJT). Tranzito lng cc c 2 tip xc P-N v 3 chn cc l cc pht (E), cc gc (B) v cc gp (C). C 2 loi tranzito l P-N-P v N-P-N. Nguyn l hot ng ca chng ging nhau ch c chiu ca ngun in cung cp vo cc chn cc ca tranzito l ngc du nhau. Tranzito c 3 ch lm vic ty theo s phn cc cho 2 tip xc P-N: ch tch cc, ch ngt, ch bo ha. Ch tch cc l khi ta cp in mt chiu sao cho tip xc pht-gc phn cc thun v tip xc gp-pht phn cc ngc. ch tch cc, tn hiu ra bin thin theo s bin thin ca tn hiu vo nn ta cn gi l ch khuch i. Tranzito lm vic ch ngt l khi ta cp in cho cc chn cc sao cho 2 tip xc P-N u phn cc ngc. ch ngt tranzito khng dn in, cc gp coi nh c ni tt vi ngun cung cp v tranzito nh mt chuyn mch trng thi h. Tranzito hot ng ch bo ha khi ta cung cp in p vo cc chn cc sao cho c 2 tip xc P-N u phn cc thun. trng thi ny, cc pht v cc gp ca tranzito coi nh c ni tt, dng in qua tranzito kh ln, st p gia cc gp-pht gn bng khng vn v tranzito nh mt chuyn mch trng thi ng. Trong chng 4 trnh by v cc thnh phn dng in trong tranzito gm c: dng in cc pht IE, dng in cc gp IC, dng in cc gc IB, v cc h s khuch i dng in cc pht v h s khuch i dng in cc gc . ng thi, trong phn ny cng nu mi quan h gia cc dng in thng qua cc h s khuch i: + i vi h s : IC = IE + ICB0 IB = (1 )IE ICB0 IE = I C + I B
102
Cu kin in t
+ i vi h s : IC = IB + ( + 1)ICB0 IB IC/ Chng 4 cn trnh by v 3 cch mc tranzito trong cc s mch khuch i l: mch cc gc chung, mch cc pht chung, mch cc gp chung; v mi quan h gia cc dng in trn tranzito vi in p trn cc chn cc ca n thng qua cc h c tuyn vo v ra. Trong phn ny, chng ta xem xt n cc c im ca tng cch mc v pham vi ng dng ca chng trong cc mch in t. Mun tranzito lm vic ng ch , cc tham s ca mch khng vt qu cc gi tr gii hn th chng ta phi xc nh im lm vic tnh cho tranzito v cc phng php n nh im lm vic chn. Thng thng ngi ta s dng mt s phng php phn cc cho tranzito nh: - Mch phn cc c nh: Mch ny n gin, d tnh ton nhng n nh thp. - Mch phn cc phn p: y l mch c nhiu u im nht so vi cc phng php phn cc khc. Mch c n nh cao ngay c khi in tr ti RC = 0, nn mch c s dng rng ri. - Mch phn cc dng hi tip: Mch ci thin c n nh im lm vic tnh, nhng cn hn ch do in tr hi tip a c thnh phn tn hiu v mch vo lm gim kh nng khuch i ca mch. Trong chng 4 cn a ra s tng ng hn hp ca tranzito trong cc mch khuch i v cc tham s ca n. Nhn chung, chng 4 c ni dung rt quan trng ca chng trnh mn hc v cu kin in t v tranzito lng cc l mt cu kin ch o ca cc mch in t khc nhau.
CU HI N TP 1. Nu cu to v cc k hiu ca 2 loi tranzito lng cc. 2. Trnh by nguyn l lm vic ca BJT ch tch cc. 3. Trnh by nguyn l lm vic ca BJT ch ngt v ch bo ha. 4. Trnh by v s mc cc gc chung v cc c im ca cch mc ny? 5. Trnh by v cch mc cc pht chung v c im ca cch mc ny? 6. Trnh by v cch mc cc gp chung v c im ca s ny? 7. Trnh by v s Darlington. 8. Nu khi nim v s cn thit ca vic phn cc cho tranzito. 9. Trnh by v mch phn cc c nh. 10. Hy cho bit v n nh v h s n nh ca mch nh thin cho BJT? 11. Trnh by v mch phn cc phn p. 12. Trnh by v mch phn cc hi tip. 13. S tng ng ca BJT ch khuch i tn hiu nh v cc tham s hn hp ca mch. 14. Trnh by nguyn l lm vic ca BJT ch chuyn mch v tham s c bn ca n. 15. Cho s mch nh hnh v :
Cho bit 1=0,98, 2=0,96, Vcc=24V, RC=120, IE=100mA B qua dng in ngc bo ho (ICBo=0). Xc nh : 103
Cu kin in t
IC IC1 IB=IB1 Q1
RC
IC2
UCE
Q2 IE1=IB2 IE=IE2
16. Cho s mch v dng Tranzito Gecmani v cc gi tr trong mch : VCC = -20V, RC = 2k, RE = 0,1k, R1 = 100k, R2 = 5k, = 50. Hy xc nh: Cc dng in tnh IB, IC, IE v in p UCE. H s n nh S.
VCC
R1 B R2
RC
RE
17. Cho s mch nh hnh v v cc gi tr : VCC = 24V, RC = 10k, RE = 270. Tranzito silic c h s = 45 v lm vic ti im lm vic tnh l UCE=5V hy xc nh: a. Tr s R b. H s n nh S
104
Cu kin in t
V CC R RC
18. Cho mch khuych i cng sut dng tranzito loi P-N-P a. Hy cho bit tranzito c mc theo cch no ? Kiu mch nh thin ? b. Nu nhim v ca cc linh kin mc trong mch c. Cho bit VC=-40V, RE=5, ICBO=-5mA, cho dng in tnh IC=-1A, h s khuych i dng =100, in tr cun s cp L1 l 10. Hy xc nh gi tr RB v h s n nh S.
Vc
L1
R ti
CE
19. Tranzito lng cc lm vic ch tch cc thun khi c phn cc vi a. hai tip xc P-N u phn cc ngc b, hai tip xc P-N u phn cc thun c. tip xc pht phn cc thun, tip xc gp phn cc ngc d. tip xc pht phn cc ngc, tip xc gp phn cc thun 20. Tranzito lng cc lm vic ch ngt khi n c phn cc vi a. hai tip xc P-N u phn cc ngc b, hai tip xc P-N u phn cc thun c. tip xc pht phn cc thun, tip xc gp phn cc ngc d. tip xc pht phn cc ngc, tip xc gp phn cc thun 21. ch kha in t Tranzito lng cc lm vic . a. ch tch cc v ch ngt; b. ch bo ha v ch tch cc c. ch bo ha v ch ngt; d. ch tch cc 22. Trong s mch khuch i, tranzito lng cc lm vic .. a. ch tch cc v ch ngt; b. ch bo ha v ch tch cc c. ch bo ha v ch ngt; d. ch tch cc
105
Cu kin in t
TI LIU THAM KHO 1. Gio trnh Cu kin in t v quang in t, Trn Th Cm, Hc vin CNBCVT, nm 2002. 2. Gio trnh K thut in t, Xun Th, NXB GD 1997
106
CU KIN IN T
GII THIU CHNG Chng 5 gii thiu v mt loi tranzito c nguyn l lm vic hon ton khc vi nguyn l lm vic ca BJT, l tranzito hiu ng trng vit tt l FET. Trong FET vic iu khin dng in trn mch ra do in p trn mch vo quyt nh. Trong chng 5 trnh by v cu to v nguyn l lm vic ca cc loi tranzito trng: JFET, MOSFET. Trong chng ny cn trnh by v cc cch mc v phn cc cho tranzito trng, cc s tng ng ca FET trong mch khuch i tn hiu nh v ch chuyn mch ca n. NI DUNG. 5.1.GII THIU CHUNG V FET. 5.1.1. Nguyn l hot ng c bn Khc vi tranzito lng cc, hot ng ca tranzito trng da trn nguyn l hiu ng trng ngha l dn in ca n tinh th bn dn do in trng bn ngoi iu khin. Dng in trong tranzito trng do mt loi ht dn to nn: l trng hoc in t nn n cn c gi l cu kin n cc. Nguyn l hot ng c bn ca tranzito trng l dng in i qua mt mi trng bn dn c tit din dn in thay i di tc dng ca in trng vung gc vi lp bn dn . Khi thay i cng in trng s lm thay i in tr ca lp bn dn v do lm thay i dng in i qua n. Lp bn dn ny c gi l knh dn in. 5.1.2. Phn loi: Tranzito trng c hai loi chnh l: - Tranzito trng iu khin bng tip xc P-N (hay gi l tranzito trng mi ni): Junction field- effect transistor - vit tt l JFET. - Tranzito c cc ca cch in: Insulated- gate field effect transistor - vit tt l IGFET. Thng thng lp cch in c dng l lp oxit nn cn gi l metal- oxidesemiconductor transistor (vit tt l MOSFET). Trong loi tranzito trng c cc ca cch in c chia lm 2 loi l MOSFET knh sn v MOSFET knh cm ng. Mi loi FET li c phn chia thnh loi knh N v loi knh P. Tranzito trng c ba chn cc l cc Ngun k hiu l ch S (source); cc Ca k hiu l ch G (gate); cc Mng k hiu l ch D (drain). Cc ngun (S): cc ngun m qua cc ht dn a s i vo knh v to ra dng in ngun IS. Cc mng (D): l cc m cc ht dn a s ri khi knh. Cc ca (G): l cc iu khin dng in chy qua knh. 5.1.3. Mt s u nhc im ca tranzito trng so vi tranzito lng cc: Mt s u im: 106
CU KIN IN T
+ Dng in qua tranzito ch do mt loi ht dn a s to nn. Do vy FET l loi cu kin n cc (unipolar device). + FET c tr khng vo rt cao. + Ting n trong FET t hn nhiu so vi tranzito lng cc. + N khng b in p ti dng ID = 0 v do n l ci ngt in tt. + C n nh v nhit cao. + Tn s lm vic cao. Mt s nhc im: Nhc im chnh ca FET l h s khuch i thp hn nhiu so vi tranzito lng cc. 5.1.4. K hiu ca FET trong cc s mch: D G S Knh N a- JFET G S Knh P D G D G S Knh N S Knh P D G S Knh N D G S Knh P D
b- MOS knh sn
c- MOS knh cm ng
Hnh 5-1 : K hiu ca cc FET trong s mch. 5.2. TRANZITO TRNG LOI IU KHIN BNG TIP XC P-N. (vit tt l JFET - Junction Field Effect Transistor)
5.2.1. Cu to v nguyn l hot ng ca JFET a. Cu to ca JFET: Tranzito JFET cu to gm c mt ming bn dn mng loi N (gi l knh loi N) hoc loi P (gi l knh loi P) gia hai tip xc P-N v c gi l knh dn in. Hai u ca ming bn dn c a ra hai chn cc gi l cc mng (k hiu l D) v cc ngun (k hiu l S). Hai ming bn dn hai bn ca knh c ni vi nhau v a ra mt chn cc gi l cc ca (k hiu l G). Cho nn, cc ca c tch khi knh bng cc tip xc P-N. Cc tranzito trng JFET hu ht u l loi i xng, c ngha l khi u trong mch c th i ch hai chn cc mng v ngun cho nhau th cc tnh cht v tham s ca tranzito khng h thay i.
107
CU KIN IN T
G S Knh dn
Hnh 5-2 : Cu to ca tranzito trng loi JFET knh dn loi N. b. Nguyn l hot ng ca JFET: Nguyn l hot ng ca tranzito trng JFET knh loi N v knh loi P ging nhau. Chng ch khc nhau v chiu ca ngun in cung cp vo cc chn cc. cho tranzito trng lm vic ch khuch i phi cung cp ngun in UGS c chiu sao cho c hai tip xc P-N u c phn cc ngc. Cn ngun in UDS c chiu sao cho cc ht dn a s chuyn ng t cc ngun S, qua knh, v cc mng D to nn dng in trong mch cc mng ID. Ta c cc s nguyn l nh hnh 5-3. Trong phn ny trnh by v nguyn l hot ng ca tranzito JFET knh N. D ID G UDS VGG + UGS S a/ JFET knh N + VDD RD VGG+ UGS G UDS S
+ VDD
D ID RD
b/ JFET knh P
Hnh 5-3 : S nguyn l lm vic ca JFET. Xt s hnh 5-3(a): cho hai tip xc P-N u phn cc ngc ta phi cung cp ngun VGG c cc dng vo chn cc ngun S, cc m vo chn cc ca G. cho cc ht dn in t chuyn ng t cc ngun v cc mng th ngun in VD c chiu dng vo cc mng, chiu m vo cc ngun. Khi UDS > 0, th in th ti mi im dc theo knh s tng dn t cc ngun S n cc mng D. Do vy, tip xc P-N s b phn cc ngc mnh dn v pha cc mng. B dy lp tip xc tng dn v pha cc mng v tit din ca knh s hp dn v pha cc mng (xem hnh 5-4).
108
CU KIN IN T
UGS
w S + UDS 2a
Hnh 5-4 : M hnh u ni ngun cung cp cho JFET knh N. Xt kh nng iu khin ca in p trn cc ca UGS i vi dng in ID v c tuyn truyn t ca FET: Mun xt kh nng iu khin dng in ID ca in p trn cc ca phi t ln cc mng mt in p UDS1 > 0 v gi c nh. Khi in p trn cc ca UGS = 0V, hai tip xc P-N s c phn cc ngc mnh dn t cc ngun v pha cc mng, v do knh cng s hp dn v pha cc mng. Tuy nhin, trng hp ny, tit din ca knh l ln nht nn dng in chy qua knh l ln nht, k hiu l IDo. Khi t in p trn cc ca c tr s m (UGS < 0), th tip xc P-N c phn cc ngc cng mnh hn, v tit din ca knh cng hp li, in tr ca knh cng tng, ko theo dng in ID gim xung. Khi in p trn cc ca gim xung n mt tr s gi l in p ngt: UGS = UGSngt th hai lp tip xc P-N ph trm ln nhau v knh hon ton bin mt, dng in chy qua knh bng 0 (ID = 0). Quan h gia dng in ID vi in p UGS th hin bng ng c tuyn iu khin hay cn gi l c tuyn truyn t v c hm l ID = f(UGS) khi UDS khng i. Dng in ID c tnh bng cng thc Shockley: ID = IDo
1 U GS U GS ngt
(5. 1)
y l mt phng trnh bc 2 v biu din bng ng cong c dng parabol, ta c c tuyn truyn t nh m t trong hnh (5-5).
109
CU KIN IN T
ID (mA)
U GS 1 K= U GS ngt
ID = KIDo
c tuyn ra ca JFET. c tuyn ra ch mi quan h gia dng in ID v in p mng UDS. i vi JFET knh loi N, t mt tr s UGS 0 (gi s t UGS = UGS1 < 0) v gi c nh, sau thay i tr s in p UDS. Khi in p UDS = 0V th hai tip xc P-N c phn cc ngc ng u t cc ngun n cc mng, tit din ca knh l ln nht nhng dng in bng 0 (ID = 0). t UDS > 0 v c gi tr nh, in th ti mi im dc theo knh s tng dn t cc ngun n cc mng, lm cho tip xc P-N c phn cc ngc mnh dn v pha cc mng, ng thi, cc ht dn in t s chuyn ng v cc mng to nn dng in cc mng ID. Tng dn in p UDS cho cng dng hn, hai tip xc P-N cng c phn cc ngc mnh hn v pha cc mng, tit din ca knh cng b hp dn v pha cc mng, nhng dng in ID li cng tng v tng tuyn tnh vi s tng ca in p UDS. Ta c on c tuyn dc ng gi l vng thun tr. Khi in p UDS tng n tr s m ti hai tip xc P-N chm nhau, to ra "im tht" ca knh, th tr s in p ta gi l in p UDS bo ha (UDSbh) hay cn gi l in p tht. Lc ny dng in ID t ti tr s dng in bo ha IDb.h.. Nu tip tc tng in p cc mng cng dng hn th cng dng in ID khng tng na m ch c tip xc P-N c phn cc ngc mnh hn v chng trm ph ln nhau lm cho mt on knh b lp v chiu di ca knh b ngn li. Lc ny, quan h gia dng in ID vi in p UDS khng theo nh lut m na, ID gn nh khng i khi in p UDS tip tc tng, ta c vng dng in ID khng i.
110
CU KIN IN T
ID (mA)
12 10
Vng thun tr
8 6 4 2
0 5
UDSbh
Hnh 5-6 : H c tuyn ra ca JFET knh loi N. Nu tng tr s in p UDS ln qu cao c th xy ra hin tng nh thng tip xc P-N v dng in ID s tng vt ln gi l vng nh thng. Thay i tr s in p trn cc ca v thc hin li cc bc nh trn s thu c h c tuyn ra nh m t trong hnh 5- 6. 5.2.2. Cc cch mc ca JFET trong s mch Nh cc tranzito lng cc, tranzito trng cng c 3 cch mc trong cc s mch khuch i l: s mc cc ngun chung, s mc cc mng chung, s mc cc ca chung. a. S cc ngun chung: Trong s hnh (5-7), ngun cung cp mt chiu VDD, in tr nh thin RG, ti RD. S mc cc ngun chung ging nh s mc cc pht chung i vi cc tranzito lng cc, c im khc l dng vo IG thc t bng 0 v tr khng vo rt ln. c im ca s cc ngun chung: Tn hiu vo v tn hiu ra ngc pha nhau. Tr khng vo rt ln Zvo = RGS Tr khng ra Zra = RD // rd H s khuch i in p S rd > 1 i vi tranzito JFET knh N th h s khuch i in p khong t 150 ln n 300 ln, cn i vi tranzito JFET knh loi P th h s khuch i ch bng mt na l khong t 75 ln n 150 ln.
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Hnh 5- 7: S mc cc ngun chung ca JFET knh loi N b. S mc cc mng chung: S mch m t trong hnh 5-8. S mc cc mng chung ging nh s mc cc gp chung ca tranzito lng cc. Ti RS c u mch cc ngun v s cn c gi l mch lp cc ngun. c im ca s ny c: - Tn hiu vo v tn hiu ra ng pha nhau. - Tr khng vo rt ln Zvo = RGD = 1 - Tr khng ra rt nh Zra = RS // gm
ura C2 IS
S cc mng chung c dng rng ri hn, c bn l do n gim c in dung vo ca mch, ng thi c tr khng vo rt ln. S ny thng c dng phi hp tr khng gia cc mch.
c. S mc cc ca chung:
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S ny theo nguyn tc khng c s dng do c tr khng vo nh, tr khng ra ln. S mch nguyn l trong hnh 5-9: S Mch vo G D Mch ra G
Hnh 5-9 : S mc cc ca chung ca JFET knh N. 5.2.3. Phn cc cho JFET Ging nh tranzito lng cc, tranzito trng cng c cc cch phn cc nh: phn cc c inh, phn cc phn p v phn cc hi tip. a. Phn cc c nh. S phn cc c nh m t trong hnh (5-10): Trong cch phn cc ny ngun in VGG c t vo cc ca v mch c gi l phn cc c nh v c UGS = -UGG c gi tr c nh.Nh vy, mun xc nh im lm vic Q thch hp ta phi dng 2 ngun cung cp. y l iu bt li ca phng php phn cc ny.
ID ura
G S
S mch phn cc phn p m t hnh 5-11. Phng php ny rt hu hiu cho tranzito lng cc nhng i vi JFET th khng tin li khi s dng.
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Hnh 5-11: Mch phn cc phn p ca JFET knh loi N c. Phn p t cp(cn gi l t phn cc) S t phn cc ca JFET m t trong hnh 5-12. y l cch phn cc khng ging nh i vi BJT v n l cch phn cc hu hiu nht i vi JFET, trong cch phn cc ny th in p UGS = -IDRS.
Hnh 5- 12: Phn cc t cp cho JFET knh loi N 5.2.4. Cc tham s ca tranzito trng ch tn hiu nh. Cc tham s c bn ca FET trong ch tn hiu nh thng c: h dn, tr khng ra, tr khng vo v h s khuch i in p. S mch tng ng ca FET ch tn hiu nh cng ging nh ca tranzito lng cc. ch ny, dng in cc mng iD l mt hm ca in p trn cc ca uGS v in p trn cc mng uDS, ta c: iD = f(uGS , uDS)
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iD iD u GS + u DS u GS U =const. u DS U =const. DS GS
(5. 3)
Trong ch tn hiu nh cc i lng iD = id ; uGS = ugs ; uDS = uds , nh vy cng thc (5. 3) c vit: 1 i d = g m u gs + u ds (5. 4) rd Trong :
h dn (k hiu l gm):
gm = i iD iD = d u GS U =const. u GS U =const u gs U =const DS DS DS
(5. 5)
h dn ca FET biu th kh nng iu khin ca in p cc ca uGS ln dng in xoay chiu cc mng iD. Gi tr h dn ca FET nm trong khong: S = 3 20 mA/V.
Tr khng ra hay cn gi l in tr mng (k hiu l rd): in tr mng rd biu th s nh hng ca in p cc mng uDS ti dng in cc mng iD ta c cng thc:
rd =
(5. 6)
H s khuch i in p : H s khuch i in p ch s ln in p trn cc ca tc ng ln dng in cc mng mnh hn so vi in p trn cc mng. Ta c cng thc: =
(5. 7)
So snh cc cng thc tnh h dn gm, in tr mng rd v h s khuch i in p , ta c cng thc sau: = gm rd (5. 8) H s khuch i c tr s khong vi trm ln.
5.2.5. S tng ng ca JFET trong ch tn hiu nh. S tng ng ca FET ch tn hiu nh c m t trong hnh 5- 13. Trong s ny tn ti cc in dung gia ba chn cc. T in Cgs biu th in dung ro th ca tip xc P-N gia cc ca v cc ngun, v t in Cgd l in dung ro th ca tip xc P-N gia cc ca v cc mng. T in Cds l in dung mng-ngun ca knh dn. y l cc in dung k sinh ca FET. Khi tranzito lm vic tn s thp th chng khng gy anh hng g cho mch, nhng khi tn s cao chng c th gy ngn mch gia cc chn cc ca tranzito.
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V tip xc P-N ca cc ca phn cc ngc nn cc in tr gia cc ca - cc ngun rgs v gia cc ca - mng rgd rt ln, do trong s hnh 5- 13 hai in tr ny c b qua.
Cc ca G Cgs Cgd Cc mng D rd Cds
gm ugs
S Cc ngun
(5. 9)
(5.10)
y l loi tranzito trng c cc ca cch in vi knh dn in bng mt lp cch in mng. Lp cch in thng dng l cht oxit nn ta thng gi tt l tranzito trng loi MOS. Tn gi MOS c vit tt t ba t ting Anh l: Metal - Oxide - Semiconductor. Tranzito trng MOS c hai loi: tranzito MOSFET c knh sn v tranzito MOSFET knh cm ng. Trong mi loi MOSFET ny li c hai loi l knh dn loi P v knh loi N.
5.3.1. Cu to v nguyn l hot ng ca MOSFET knh sn: a. Cu to: Tranzito trng MOSFET knh sn cn gi l MOSFET-ch ngho (Depletion-Mode MOSFET vit tt l DMOSFET). Ta c m hnh m phng cu to ca MOSFET trong hnh 5 14. Tranzito trng loi MOS c knh sn l loi tranzito m khi ch to ngi ta ch to sn knh dn.
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S P Si(N)
D P
Knh P
Hnh 5- 14 : Cu to ca MOSFET knh sn loi P b. Nguyn l hot ng: Tranzito loi MOSFET knh sn c hai loi l knh loi P v knh loi N. (v d trong hnh 5-14 l MOSFET c knh sn loi P). Khi tranzito lm vic, thng thng cc ngun S c ni vi v ni t nn US = 0. Cc in p t vo cc chn cc ca G v cc mng D l so vi chn cc S. Nguyn tc cung cp ngun in cho cc chn cc sao cho ht dn a s chy t cc ngun S qua knh v cc mng D to nn dng in ID trong mch cc mng. Cn in p t trn cc ca c chiu sao cho MOSFET lm vic ch giu ht dn hoc ch ngho ht dn. Nguyn l lm vic ca hai loi tranzito knh P v knh N ging nhau ch c cc tnh ca ngun in cung cp cho cc chn cc l tri du nhau. S nguyn l u ni MOSFET knh sn nh trong hnh 5- 15.
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Kh nng iu khin dng in ID ca in p trn cc ca UGS chnh l c tuyn truyn t ca MOSFET, ni cch khc, l mi quan h gia dng in ID vi in p UGS, ta c hm sau: ID = f(UGS) khi UDS = const. cc ht dn l trng chuyn ng t cc ngun S v cc mng D, ta t mt in p trn cc mng UDS = UDS1 <0 v gi khng i. Sau thay i in p trn cc ca UGS theo chiu dng hoc theo chiu m. Khi UGS = 0 th di tc dng ca in p UDS cc l trng chuyn ng t cc ngun v cc mng to nn dng in ID Nu UGS < 0, nhiu l trng c ht v knh lm nng ht dn trong knh tng ln, dn in ca knh tng v dng in chy trong knh ID tng ln. Ch lm vic ny gi l ch giu ht dn. Nu UGS > 0, cc l trng b y ra xa knh lm mt ht dn trong knh gim xung, dn in ca knh gim v dng in chy qua knh ID gim xung. Ch lm vic ny gi l ch ngho ht dn. Mi quan h ny c th hin trn hnh 5-16a. - Xt h c tuyn ra (hay quan h gia dng in ID v in p UDS): ID = f(UDS) khi UGS = const. Hnh 5- 16b th hin h c tuyn ra ca MOSFET knh sn loi P. y l cc ng biu din mi quan h gia dng in ID vi in p UDS ng vi tng gi tr ca in p UGS khc nhau.
ID (mA) Vng dng ID khng i 6 4 Vng thun 2 tr 3 UGS(v) UGSngt 0 -5 UDSbh b/ UGS =-3v UGS=-2v Vng giu UGS=-1V ht dn UGS=0V Vng ngho -10 -15 -20 -UDS (v)
Hnh 5 - 16 : Cc h c tuyn ca MOSFET knh sn loi P: a. H c tuyn iu khin ID = f(UGS) khi UDS khng i b. H c tuyn ra ID = f(UDS) khi UGS khng i
Trn h c tuyn ra, khi in p UDS = 0V th dng in qua knh ID = 0, do c tuyn xut pht t gc ta . iu chnh cho UDS m dn, vi tr s cn nh th dng in ID tng tuyn tnh vi s tng tr s ca in p UDS v mi quan h ny c tnh theo nh lut m. Ta c vng thun tr ca c tuyn.
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Khi in p UDS t ti tr s bo ha (UDSb.h.) th dng in cc mng cng t ti mt tr s gi l dng in bo ha IDb.h.. Trong trng hp ny, lp tip xc P-N chm vo y ca lp oxit v knh c im "tht" ti cc mng, nn UDSbh cn c gi l in p tht. Nu cho UDS>UDSb.h. th dng in khng thay i v gi nguyn tr s bo ha IDb.h.. ng thi, tip xc P-N b phn cc ngc cng mnh v pha cc mng, lm cho chiu di ca phn knh b "tht" tng ln. chnh lch ca in p UDS = UDS-UDSbh c t ln on knh b "tht" v lm cho cng in trng y tng, gip cho s cc l trng vt qua on knh b "tht" khng thay i, do vy dng IDbh gi khng i. Ta c vng dng in ID bo ha. Trng hp, nu t UDS qu ln s dn n hin tng nh thng tip xc P-N pha cc mng, dng in ID tng vt. Lc ny tranzito chuyn sang vng nh thng. Qua cc h c tuyn ca MOSFET knh sn ta thy n lm vic c 2 ch ngho v giu ht dn. MOSFET knh sn c mc n nh nn n thng c dng trong cc tng khuch i u tin ca thit b cao tn. h dn gm ca n ph thuc vo in p UGS nn h s khuch i in p thng c t ng iu khin.
5.3.2. Cu to v nguyn l hot ng ca MOSFET knh cm ng. a. Cu to: Tranzito trng loi MOS knh cm ng cn gi l MOSFET ch giu (Enhancement-Mode MOSFET vit tt l E-MOSFET). Khi ch to MOSFET knh cm ng ngi ta khng ch to knh dn. Do cng ngh ch to n gin nn MOSFET knh cm ng c sn xut v s dng nhiu hn. Hnh 5-17 m phng cu to ca MOSFET knh cm ng loi P
P Si(N)
Tip xc P-N
Hnh 5 17: Cu to ca MOSFET knh cm ng loi P b. Nguyn l hot ng Nguyn l lm vic ca loi knh P v knh N ging ht nhau ch khc nhau v cc tnh ca ngun cung cp t ln cc chn cc. Trc tin, ni cc ngun S vi v ni t, sau cp in p gia cc ca v cc ngun to knh dn. - To knh dn v kh nng iu khin ca tranzito: V d: Ta trnh by nguyn l hot ng ca MOSFET knh cm ng loi P.
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Theo nguyn tc cp ngun in cho cc chn cc, ta cp ngun in UGS < 0 to knh, cn UDS < 0 tc ng cho cc l trng chuyn ng t cc ngun v cc mng to nn dng in ID.(Xem hnh 5 -18) Khi ta t mt in p ln cc ca m hn so vi cc ngun (UGS < 0) n mt gi tr gi l in p ngng (k hiu l UGSth) th mt s cc l trng c ht v to thnh mt lp mng cc l trng trn b mt ca lp bn dn Si(N), ni lin cc ngun S vi cc mng D v knh dn in c hnh thnh.
Khi knh xut hin, di tc dng ca in trng cc mng cc l trng s di chuyn t cc ngun, qua knh, v cc mng v to nn dng in trong tranzito ID. Tip tc cho UGS cng m hn, ngha l UGS>UGSth, th s l trng c ht v knh cng nhiu, mt ht dn trong knh cng tng ln, dn in ca knh cng tng dn n cng dng in chy qua knh cng tng ln. Qui lut tng ca dng in ID theo in p UGS biu din theo cng thc sau: ID = k (U GS - U GSth )
2
(5.11)
y l phng trnh ca c tuyn truyn t biu din trong hnh 5-19. H s k l hng s v c tnh theo cng thc: I D ( on ) (5.12) k= (U GS (on) U GSth )2 Trong ID(on) v UGS(on) l tr s dng in v in p tng ng c xc nh trn h c tuyn ra ca MOSFET. Thay cng thc (5.12) vo cng thc (5.11) ta c: I D ( on ) (U GS U GSth )2 ID = (5.13) 2 (U GS (on) U GSth ) t
U U GSth K = GS U GS ( on ) U GSth ID = KID(on) ta c:
2
(5.14)
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ID (mA)
0 UGSth
+UGS (v)
H c tuyn ra: H c tuyn ra biu th mi quan h gia dng in ID v in p UDS. Trong s mc cc ngun chung th ID l dng in ra v in p UDS l in p ra, ta c hm biu th mi quan h ny: ID = f(UDS) khi UGS gi khng i in p t ln cc ca yu cu phi ln knh dn c hnh thnh. Sau , ta thay i in p UDS v theo di s thay i ca dng ID theo in p UDS. Ta c s mch nguyn l u ni MOSFET knh P m t trong hnh 5- 20a. Xt ng cong c tuyn ra ng vi tr s UGS < 0, v d UGS4 nh trong hnh 5- 20b, ta thy: Nu UDS = 0, th cc l trng khng chuyn ng v cc mng nn dng ID = 0. ID (mA) im "tht" UGS S P Si(N) G P D Tip xc P-N 0 a/ UDS UDSbh b/ Vng dng ID khng i UGS4 <0 UGS UGSth nh thng -UDS
Khi t UDS<0 c tr s nh, th in th ti mi im dc theo knh s gim dn cc ngun S n cc mng. Di tc dng ca in p UDS cc l trng s di chuyn t cc ngun n cc mng to nn dng in ID. Tip tc cho in p UDS cng m th dng ID tng nhanh v tng tuyn tnh vi s tng ca in p m UDS. ng thi, tip xc P-N cng c phn cc ngc tng dn t cc ngun n cc mng, b dy lp tip xc tng dn v pha cc mng v 121
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knh hp dn v pha cc mng, in tr knh tng ln. Ta c on dc ca c tuyn gi l vng thun tr. Khi tr s in p trn cc mng t tr s, m ti b dy ca tip xc P-N tng ln chm vo y ca lp oxit pha cc mng, th ta gi l in p cc mng bo ha (UDSbh). Lc ny dng in ID t tr s bo ha IDb.h.. Tip tc cho in p UDS cng m hn, th b dy ca tip xc P-N cng tng v pha cc mng, phn knh b "tht" li cng tng ln v chiu di ca knh b ngn li, nhng dng in khng i v ID = IDbh. Trong trng hp ny, gia tng ca in p cc mng UDS =UDS-UDSbh s c t ln on knh b "tht". V n tc dng trc tip ln phn knh cn li, kch thch s chuyn dch ca cc ht l trng t cc ngun vt qua on knh b "tht" v cc mng lm cho dng in ID khng i. ta c vng dng ID khng i. Nu tr s m ca UDS qu ln th c th xy ra hin tng nh thng lp tip xc P-N pha cc mng, lm cho dng in ID tng vt ln.
5.3.3. Cc cch mc MOSFET trong cc s mch khuch i Ging nh JFET, tranzito loi MOSFET cng c 3 cch mc c bn l cc ngun chung, cc mng chung v cc ca chung. Trong 3 cch mc ny th cch mc cc ca chung khng c s dng trn thc t. Do vy, thng thng ta s dng hai cch mc ngun chung v mng chung. 5.3.4. Phn cc cho MOSFET Cng nh BJT v JFET, thng thng c 3 cch phn cc cho MOSFET nh ch ra hnh 5-21 l: a/ phn cc c nh, b/ phn cc hi tip v c/ phn cc phn p.
+VDD RD C2 C1 Ur Uv RG Uv C1 RG
+VDD RD C2 Ur Uv R2 RS R1 C1 RD
+VDD C2 Ur CS
a/
b/
c/
Hnh 5 21: Cc cch phn cc thng thng cho MOSFET Cch phn cc c nh nh hnh 5-21a cho MOSFET knh sn vi in p UGS=0 gi l phn cc zero v ID = IDo. y l cch phn cc n gin nht. S hnh 5-21b l cch phn cc hi tip cc mng cho MOSFET knh cm ng. Do dng IG = 0 nn URG = 0V v Ur = Uv . S hnh 5-21c l mch phn cc phn p. cch phn p ny c tr khng vo Zv = R1//R2; UGS = UG IDRS. 5.3.4. S mch tng ng ca MOSFET
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UGS
Zv
gmUGS
rd
UDS
Trong s , in tr Zv rt ln (Zv = RGS ) nn trong cc s mch tng ng mch vo gn nh h mch. in tr rd l tr khng ra v n l in tr ca knh i vi thnh phn xoay chiu. u im ca tranzito trng so vi tranzito lng cc: - Tr khng vo ca FET rt ln: loi iu khin bng tip xc P-N khong 1010 1013; loi MOS khong 1013 1015. - Dng in qua cc ca rt nh: Loi JFET: IG(JFET) = 1 PA 1 nA Loi MOS : IG(MOS) = (
1 1 )IGJFET 10 20
- Tnh n nh v nhit cao - Tn s lm vic cao nh n in t chn khng c th n vi trm MHz. - Tp m nh Tranzito trng c s dng ging nh tranzito lng cc nhng do h s khuch i in p ca n nh hn nhiu nn chng thng c dng nhng mch c yu cu v n nh nhit cao, nhy cao v tn s lm vic cao.
5.3.6. Mt s ng dng ca FET Trong k thut in t, tranzito trng c s dng gn ging nh tranzito lng cc. Tuy nhin, do mt s cc u nhc im ca FET so vi BJT ni trn, c bit l h s khuch i thp, m tranzito trng thng c s dng nhng mch th hin c u th ca chng. c bit trong vic tch hp IC th tranzito trng c ng dng rt hiu qu v cho php to ra cc IC c tch hp rt cao (LSI v VLSI). Sau y ta s xem xt mt vi mch ng dng ca FET. 1. Tng khuch i vi sai dng FET. tng tr khng vo (ti hng chc M) ngi ta s dng tranzito trng nh hnh 5-23. V nguyn l hot ng ca mch khuch i vi sai khng c g khc vi mch dng tranzito lng cc, ch c tr khng vo ca mch dng FET th ln hn nhiu (c th ti hng trn ln cao hn so vi dng BJT).
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+VDD
RD1 RD2 D1 G1 D2
Ur1
Ur2
G2
UV1
S1
T1
T2
S2
UV2
IS -VDD
2. Mch pht sng RC dng FET.(Hnh 5-24) tng khuch i c h s khuch i K = gm.RL, trong gm l h dn ca FET v RD rd RL l in tr ti ca mch. RL = RD + rd Tn s dao ng ca mch: f = 1 2 6 RC
VDD RD
RS
CS
+ R C R
+ C R
+ C
Mch to dao ng RC cho dao ng c tn s thp. Trong khi khuch, tn hiu ra ngc pha vi tn hiu vo (FET mc Ngun chung) nn mch hi tip RC ph thuc tn s phi dch pha tn hiu 180 0 tn s pht sng. 124
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TM TT NI DUNG Tranzito trng (FET) l loi tranzito n cc, dng in chy trong cu kin do mt loi ht dn to nn. Vic iu khin dng in ra do in trng trn cc ca quyt nh. Khi thay i in p trn cc ca s lm thay i tit din knh dn in, v lm thay i mt ht dn trong knh dn n s thay i cng dng in chy qua knh. Tranzito trng chia lm 2 loi chnh: tranzito trng mi ni JFET v tranzito trng c cc ca cch in IGFET- thng thng gi l MOSFET. JFET c knh dn nm gia 2 tip xc P-N v 3 chn cc l cc Ngun (S), cc Ca (G), cc Mng (D). C hai loi JFET l loi knh N v loi knh P. Hai loi ny nguyn l hot ng ging nhau ch c chiu ngun in cung cp cho cc chn cc l ngc du nhau. Nguyn tc cp in phn cc cho JFET sao cho hai tip xc P-N phn cc ngc v ht dn phi chuyn ng t cc ngun v cc mng to ra dng in cc mng. Khi thay i in p trn cc ca th dng in qua tranzito thay i theo qui lut hm m nh sau:
U GS ID = ID0 1 U GSngat Trong : ID l dng in cc mng ID0 l dng in mng khi UGS = 0V UGS l in p t ln cc ca UGS ngt l in p ngt. V ta c ng c tuyn iu khin biu din mi quan h ny. Khi in p t ln cc mng thay i s lm cho dng in mng thay i theo mt cch tuyn tnh khi UDS cn nh (UDS < UDS bo ha). Tranzito lm vic trong vng thun tr. Khi UDS>UDS bo ha th tranzito chuyn sang hot ng vng bo ha hay vng c dng in khng i (ID bo ha). Lc ny, khi in p trn cc mng thay i th dng in qua tranzito khng thay i. MOSFET l tranzito trng c cc ca cch in vi lp cch in l oxit silic. C hai loi tranzito trng c cc ca cch in l loi c knh sn v loi knh cm ng. Mi loi li c 2 loi l knh loi N v knh loi P. Nguyn l hot ng ca loi knh N v knh P ging nhau ch c chiu ca ngun cung cp vo cc chn cc l ngc du nhau. MOSFET knh sn hot ng hai ch : ngho ht dn v ch giu ht dn. Do khi ch to ngi ta ch to sn knh, nn khi t in p ln cc ca v cc mng th tranzito c th dn in (UGS > UGSth). MOSFET knh cm ng l tranzito trng khng ch to knh dn in, m knh s c hnh thnh trong qu trnh tranzito lm vic. Mun tranzito dn in, ta phi cp in ln cc ca to knh. Khi UGS = UGSth th knh mi hnh thnh. Sau khi c knh th dng in trong tranzito do cc ht dn in chy t cc ngun v cc mng s chu s iu khin ca in p t ln cc ca v cc mng. Mi quan h ny c th hin qua cng thc tnh dng in cc mng sau:
2
ID = k (U GS U GSth )
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c tuyn truyn t ca MOSFET knh cm ng khng xut pht t gc ta m xut pht t gi tr UGSth v cng c ng cong hm m bc 2. c tuyn ra ca MOSFET knh cm ng cng c 2 vng hot ng c bn l vng thun tr v vng dng in khng i. Trong cc s mch, tranzito trng cng c phn cc nh cc tranzito lng cc, v cc phng php phn cc cng tng t. Trong phn ny, chng ta cn ch s dng cc phng php ti u cho tng loi tranzito trng nh trnh by trong mc 5.2.3 v 5.3.4. So vi tranzito lng cc, tranzito trng c mt s c im: Tr khng vo rt ln, dng vo rt nh (IG =0); iu khin dng in bng in p; tn s lm vic cao; tp m thp; nhng h s khuch i in p nh hn.
CU HI N TP 1. Trnh by v cu to v nguyn l hot ng ca JFET? 2. Nu cc tham s c bn ca tranzito trng JFET? 3. Trnh by v cc cch mc c bn ca JFET trong cc s mch khuch i? 4. Trnh by cch phn cc c nh ca JFET? 5. Trnh by phng php t phn cc ca JFET? 6. Trnh by v cu to v nguyn l hot ng ca MOSFET knh sn? 7. Gii thch cc h c tuyn iu khin v h c tuyn ra ca MOSFET knh sn? 8. Trnh by v cch phn cc c nh cho MOSFET knh sn? 9. Trnh by v cu to v nguyn l hot ng ca MOSFET knh cm ng? 10. Nhn xt v gii thch cc h c tuyn iu khin v h c tuyn ra ca MOSFET knh cm ng? 11. Trnh by v phng php phn cc phn p cho MOSFET? 12. Trnh by v cch phn cc hi tip cho MOSFET? 13. So snh u nhc im ca cc phng php phn cc cho FET. 14. Cho bit cc u nhc im ca FET so vi BJT?
VD RD C1 RG G RS D S C3 C2
Hnh bi 15 a. Hy cho bit tranzito c mc theo cch no ? Mch nh thin kiu g ? b. Nu nhim v ca cc linh kin trong mch ?
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c. Cho bit VD=30V, in p ngt UGSngt= -2V, dng in ID0=2mA (ti UGS=0V), im lm vic tnh c chn c dng ID=1mA. Hy tnh: - in p UGS ti im lm vic tnh ? - Tr s in tr RS (cho CS rt ln). 16. Cho b khuych i (nh hnh bi 15) s dng FET knh N vi -in p ngt UGSngt= -2V - h dn gmo=1,6mA/V (khi UGS=0V) -Dng in bo ha ID0=1,65mA (ng vi khi UGS=0V). Ngun cung cp VD=24V. -Tranzito lm vic vi dng in tnh ID=0,8mA. -Gi s rd RD Hy tnh gi tr in p tnh UGS, h dn gm, in tr RS, RD nu h s khuych i in p thp nht l 20dB (cho CS rt ln) 17. Tng khuch i dng tranzito FET knh N c ID0 = 1mA, UGSngt = -1V. Nu in p tnh UDS = 10V, tnh R1
+24V 56k D S R1 4k
1M
Hnh bi 17
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VD
R1 C1 R C2
2
R3
Hnh bi 18 a. Hy cho bit tranzito c mc theo cch no ? b. Mch nh thin kiu g ? c. Nu nhim v ca cc linh kin trong s mch. 19. S mch cho nh bi 18. - Nu cp ngun VD = 30V; in p ngng UGS = 1,0V; Dng in mng ti UGS = 2UGSngng l ID0 = 1,5mA; R1 = 23k; R2 = 7k; im lm vic tnh c chn c UGS=5V. Hy tnh: Tr s dng in tnh ID Tr s in tr R3 20. Trong FET vic iu khin dng in mng l do.quyt nh. a. dng in trn cc ca; c. in p trn cc mng; b. in p trn cc ca d. dng in cc ca v in p cc ca
21. Trong FET dng in trn cc ca c gi tr bng: a. IG 0mA; b. IG = (50 100)mA; c. IG = ; d. 0mA < IG < 10mA
22. Quan h gia dng in ID v in p UGS trong JFET c th hin qua cng thc sau:
U GS a. I D = I D 0 1 U GSngat U GS c. I D = I D 0 1 U GSngat
2
U GS b. I D = I D 0 1 + U GSngat U GS d. I D = I D 0 1 + U GSngat
TI LIU THAM KHO 1. Gio trnh Cu kin in t v quang in t, Trn Th Cm, Hc vin CNBCVT, nm 2002. 2. Electronic Principles- Firth Edition, Albert Paul Malvino, Ph.D., E.E. McGraw-Hill. 3. Gio trnh K thut mch in t, Xun Th, NXB KHKT, nm 1999
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CHNG 6: CU KIN THYRISTO GII THIU CHNG Chng 6 gii thiu v cc cu kin c 4 lp bn dn. y l cc cu kin thuc h thyristo. Thyristo l cu kin bn dn kha m mch m tc ng 2 trng thi bn (kha v m) ca n ty thuc vo tnh hi tip dng ca 4 lp bn dn P-N-P-N. Thyristo c th l cu kin 2 chn cc, 3 chn cc hoc 4 chn cc, c th dn in mt chiu hoc c hai chiu. Trong h thyristo quan trng nht l n chnh lu Silic c iu khin (SCR), Triac, Diac, v.v...Phn u tin ca chng s gii thiu v cu to v nguyn l hot ng ca cu kin chnh lu silic c iu khin (SCR), v cc c tnh v tham s ca n. Cu kin th hai l triac, y l cu kin dn in hai chiu, cc c tnh v tham s ca triac, y l linh kin quan trng c dng nhiu trong cc mch iu khin ngun in. Cu kin Diac: cu to v nguyn l hot ng, cng nh ng dng ca n. Ngoi ra, trong chng 6 cn gii thiu v cu to v nguyn l hot ng ca tranzito n ni (UJT). y l cu kin c 3 chn cc nhng ch c 1 lp tip xc P-N v do vy n cng c cc c tnh v tham s rt khc vi cc tranzito thng thng. NI DUNG 6.1. CHNH LU SILIC C IU KHIN (SCR). 6.1.1. Cu to: Chnh lu silic c iu khin, gi tt l SCR, gm c 4 lp bn dn P v N sp xp theo kiu P-N-P-N. Ba chn cc c k hiu bng cc ch A - ant, K - catt, v G - cc iu khin. Cc ant ni vi phn bn dn P1 trc, cn catt ni vi phn bn dn N2 sau; cc iu khin G thng c ni vi phn bn dn P2. n chnh lu silic c iu khin ch dn in mt chiu. M hnh cu to v k hiu ca SCR trong s mch m t trong hnh 6- 1a,b,c. C hai loi SCR l: + SCR iu khin theo catt hay cn gi l SCR theo qui c (n gin gi l SCR). Loi ny cc iu khin G c ni vi phn bn dn P2 sau. + SCR iu khin theo ant hay cn gi l SCR kiu b. Loi ny cc iu khin G c ni vi phn bn dn N1 trc. Thng thng ngi ta s dng loi SCR qui c. Cc SCR kiu b cng sut thp t c dng v cng sut tiu th ca n cao hn loi SCR qui c. Sau y, chng ta nghin cu v nguyn l lm vic ca SCR qui c, gi tt l SCR.
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A P1
T1
T2 T3 N2
K A G K
T1 T2 P1
T3
N1 P2 G
N1 P2 N2 G
A G
A G b- SCR kiu b K Cc G Lp P
Si(N)
Lp N Lp P Lp nhm
c/ Cu to Ant
a Moliden
Hnh 6- 1: K hiu v cu to ca SCR. 6.1.2. Nguyn l lm vic: S mch tng ng ca SCR: A I P1 N1 G P2 N1 K N1 P2 E G R Q1 IC1 A R IC2 Q2 I K
Hnh 6- 2: S mch tng ng ca SCR Theo cu to, SCR c 3 tip xc P- N c k hiu T1, T2, v T3 Khi cc iu khin G h (IG = 0): t in p ngun cung cp UAK vo gia ant v catt phn cc cho SCR v lc ny n c coi nh 1 it: + Khi phn cc ngc (UAK < 0) th tip xc T1 v T3 phn cc ngc, T2 phn cc thun nn qua SCR ch c dng in ngc rt nh. Nu tng UAK ln cao n in p nh 130
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thng tip xc T1 v T3 th y l hin tng nh thng kiu thc l hay nh thng zener vi in p nh thng U.t. = U.t.T1 + U.t.T3. Nu xy ra hin tng ny th coi nh SCR hng. + Khi phn cc thun (UAK > 0) th cc tip xc T1 v T3 phn cc thun, tip xc T2 phn cc ngc v qua SCR cng ch c dng in ngc rt nh (hay SCR ch tr khng cao). Nu tng dn in p phn cc thun UAK > 0 ln n in p nh thng tip xc T2 th dng in qua SCR tng vt. Lc ny c 3 tip xc P-N u coi nh c phn cc thun, in tr ca chng rt nh lm cho st p trn SCR gim hn xung cn khong t 1 2 V. Tr s in p m ti xy ra nh thng tip xc T2 c gi l in p nh khuu UBO. Tr s UBO ny thng vo khong t 200 400V. Vng in p ny ta gi l vng chn thun. Nh vy, khi SCR dn in th dng in qua n khng th khng ch c trong SCR m n c hn ch nh in tr mc mch ngoi. Theo s mch tng ng hnh 6- 2 ca SCR ta thy, khi SCR dn in th qua n c dng in I chy t A n K v gia cc tip xc P-N ca 2 tranzito Q1 v Q2 c cc dng in vo v ra l: (6. 1) IC1 = IB2 v IC2 = IB1 Trong : IC1 = 1I + ICBo1 IC2 = 2I + ICBo2 V 1, 2 l h s khuch i thc l alpha (hay s nhn thc l). Dng in tng qua SCR l: I = IC1 + IC2 = I(1 + 2) + ICBo1 + ICBo2 (6. 2) Thay: ICBo1 + ICBo2 = ICBo ICBo l dng in ngc bo ha ca tip xc P-N. Vy ta c: I CBo I = (6. 3) 1 - ( 1 + 2 )
Nh vy, khi (1 + 2) = 1 th dng in tng vt v khng gii hn c, n tng ng vi tip xc T2 c phn cc thun. Lc ny, SCR dn in v c ngha l c hai tranzito Q1 v Q2 u dn bo ha. Lc ny, SCR ch "ON": ng mch, h s khuch i ca hai tranzito h nn nh v t c iu kin (1 + 2) = 1.
Khi ta a dng in iu khin vo cc iu khin G (IG 0): Khi cho mt dng in vo cc iu khin G, n c th lm tng h s m khng ph thuc vo in p v dng in. Nh vy, dng IG c tc dng gia tng ht dn thiu s cho lp bn dn P2 cho tip xc T2 thng sm hn. Tu theo tr s ca dng IG m in p nh thng tip xc T2 v tr s dng in duy tr IH thay i. Khi IG c gi tr cng ln th UBo cng nh v IH cng nh. Quan h ny c th hin qua c tuyn Vn-Ampe ca SCR biu din trong hnh 6-3.
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U.t.
IH
IG0=0 +UAK
(6. 4)
in p, m ti SCR chuyn t ch ngt sang ch dn c iu khin bng tn hiu rt nh trn cc iu khin. cc SCR cng sut ln, kch thch cho SCR hot ng ta dng dng in IG c hiu ng nh. Cn cc SCR cng sut thp, dng IG c s dng bt v tt SCR. Khi SCR dn th d ta ct dng in iu khin IG , n vn tip tc dn in. Khi SCR dn in ta gi l n c khi ng. SCR ch ngng dn khi dng in b gim xung di mc IH hoc in p t ln SCR na chu k m. Khi SCR ngng dn, mun n hot ng tr li ta phi kch khi ng cho n. Nh vy ta thy, trn thc t, khi t in p UAK no ln SCR th ch c dng in ngc chy qua SCR, cn dng iu khin IG s to ra mt thnh phn dng in kch thch sao cho tng cc h s khuch i kiu thc l ca dng in (1 + 2) 1 th SCR s khi ng. Khi UAK thun tng ln th dng iu khin cn thit khi ng SCR s gim xung.
c im ca SCR: - Thi gian m v tt (hay thi gian phc hi tp) rt nhanh (vi s n vi chc s). - Cng dng in cao (hng nghn ampe). - in p cao (hng nghn Vn). - St p gia 2 cc nh (t 1 2V). - Kh nng iu khin ln 6.2. TRIAC (Triode Alternative Current).
L mt cu kin thuc h Thyristo. Triac c 3 chn cc v c kh nng dn in hai chiu khi c tn hiu kch khi ng (dng hoc m). 132
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6.2.1. Cu to ca triac: Do tnh dn in hai chiu nn hai u ra chnh ca triac dng ni vi ngun in c gi l u ra MT1 v MT2 . Gia hai u ra MT1 v MT2 c nm lp bn dn b tr theo th t P-N-P-N nh SCR theo c 2 chiu. u ra th ba gi l cc iu khin G. Nh vy triac c coi nh hai SCR u song song ngc chiu vi nhau, xem hnh 6-4.
MT2 K1 A2 G2
MT2 N P N
MT2
G1
A1 MT1
K2
P N G N G MT1 MT1
Hnh 6- 4: Cu to ca triac 6.2.2. Nguyn l lm vic: Theo quy c, tt c cc in p v dng in u quy c theo u ra chnh MT1. Nh vy, in p ngun cung cp cho MT2 phi dng (hoc m) hn so vi MT1. Cn tn hiu iu khin c a vo gia hai chn cc G v chn cc MT1. K hiu v s nguyn l u triac trong mch m t trong hnh 6-5a,b.
MT1
c tuyn Vn-Ampe ca triac c biu din trong hnh 6- 6. c tuyn th hin kh nng dn in hai chiu ca triac. Phng php kch cng ca triac cng ging nh SCR ch khc l c th dng c dng dng hay dng m cho c phn t th I v phn t th III ca c tuyn Vn- Ampe ca triac. C hai phng php kch khi ng cho triac hot ng nhy nht l: 133
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Cc cng G dng v cc MT2 dng so vi MT1 Cc cng G m v cc MT2 m so vi MT1 Trong mch in, mt triac cho qua 2 na chu k ca mt in p xoay chiu v iu khin bng mt cc iu khin G. Khc vi SCR, triac tt trong mt khong thi gian rt ngn lc dng in ti i qua im O. Nu mch iu khin ca triac c gnh l in tr thun th vic ngt mch khng c g kh khn. Nhng nu ti l mt cun cm th vn lm tt triac tr nn kh khn v dng lch pha tr. Thng thng tt Thyristo ngi ta s dng ci ngt in hoc mch o lu dng in trong mch.
I Vng chn ngc -UBo -UBo1 IH 0 -IH UAK UBo1 UBo
6.3. DIAC 6.3.1. Cu to v k hiu ca diac Diac l cu kin 4 lp bn dn c 2 chn cc A1 v A2. Cu trc ca diac ging nh triac nhng khng c cc iu khin G nn diac cng dn in hai chiu.. Hnh 6-7 gii thiu k hiu ca diac trong cc s mch.
I A1 UB0 UB0 A2
Hnh 6 7: K hiu ca diac
IH -IH UV
U UB0
UB0
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6.3.2. Nguyn l hot ng ca diac Do khng c cc iu khin nn vic kch m cho diac thc hin bng cch nng cao in p t vo hai cc. Khi in p ngun t n gi tr UB0 th diac dn in v in p trn n st xung ch cn 1 n 2 vn (UV). Trong ng dng, diac thng dng lm phn t m cho triac dn. Khi diac dn in, st p trn n l: U = UB0 UV c a vo cc iu khin ca triac nh l xung kch lm cho triac dn in. Thng thng, trn thc t ng dng, diac v triac c t hp thnh mt linh kin duy nht. 6.3.3. ng dng ca Thyristo.
Thyristo c dng nh mt chuyn mch in t. N thng c dng iu khin ngun in, iu khin cng sut cho l nung, iu khin tc t, iu khin n tt - sng, iu khin m t in mt chiu v.v... Sau y chng ta xem xt mt th d v mch kim sot pha (hay cn gi l mch iu khin ngun): y l qu trnh tt m dng ni ngun in xoay chiu cho ti trong mt phn ca mi chu k xem hnh 6-8: a/ mch iu khin na chu k dng SCR v b/ mch iu khin c chu k dng triac. Trong : im A l thi im kch Gc K l gc kch v D l gc dn (thc t K + D = 180) Bng cch thay i gc kch hoc gc dn chng ta s kim sot c cng sut tiu th ca ti. Gc dn cc i Dmax = 1800 ; gc dn cc tiu Dmin = 900 Ti U~ Kch SCR U~ Kch Ti Triac
t t
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UJT l linh kin bn dn c mt tip xc P-N v 3 chn cc. N gm mt thanh bn dn Silic loi N c gn thm 1 ming bn dn Silic loi P to thnh mt tip xc P-N. Chn cc ni vi mu bn dn P gi l cc pht E. Hai u cn li ca thanh Silic loi N c a ra 2 chn cc gi l Nn 1 ( k hiu B1) v Nn 2 (k hiu B2).
B2
B1
E
b/
B2 RE UEE UE + B1 c/
Hnh 6- 10: a- Cu to; b- k hiu; c/ S nguyn l; d- s tng ng ca UJT e- b tr chn cc ca UJT
UBB
Trong s tng ng, it c thay th cho tip xc P-N; RB1 l in tr ca phn bn dn nn 1; RB2 l in tr ca phn bn dn nn 2. cho tranzito n ni hot ng ta phn cc cho n nh hnh 6- 9c. Cung cp in p dng cho B2 so vi B1 (UBB > 0). Nh vy, nu h mch cc pht th RB1v RB2 l b phn p cho ngun UBB . Do , in p ti im O s l: U BB R B 1 UO = (6. 5) = UBB R B1 + R B 2 136
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Trong
-
R B1 R B1 + R B 2
gi l h s thun khit
Nu UE < UBB (UE < UO) th tip xc P-N (it D) c phn cc ngc v qua n ch c dng in ngc IEO rt nh. Ta c vng ngt ca c tuyn vn- ampe ca UJT. - Khi UE > UBB , tip xc P-N c phn cc thun, dng IE tng dn. Khi UE > UP (Up gi l in p kch khi cho UJT hot ng hay gi l in p nh) th dng IE tng nhanh. Di tc dng ca in trng, cc l trng chuyn ng t cc pht E xung Nn 1 (B1), cn cc in t chuyn ng t Nn 1 n phn pht to nn dng in IE. Do s gia tng t ca cc ht dn trong Nn 1 nn in tr RB1 gim trong khi dng in IE tng v in p UE gim nn ta c vng in tr m ca c tuyn vn- ampe. Ta c c tuyn vn- ampe ca UJT m t trong hnh 6 -10: 14 12 UP 10 8 6 4 UV 2 UE(V) UBB=30V UBB=20V UBB=10V UBB=5V IB2=0 4 6 8 10 12 14 16 IE(mA) T=250C
IE0 IP 0 2
c tuyn Vn- Ampe biu th quan h gia dng in cc pht IE vi in p trn cc pht UE. Mi quan h ny c biu din bng hm sau: IE = f(UE) Nu cc nn 2 (B2) h mch, ngha l dng IB2=0 th quan h Vn-Ampe li vo l c tuyn Vn-Ampe ca tip xc P-N:
E U VT I E = I E 0 e 1
v ta c ng c tuyn ng vi IB2=0 trong hnh Qua hnh 6-10 ta thy, khi thay i in p t ln gia nn 1 v nn 2 (UBB) th in p nh (UP) cng thay i theo v a c tuyn dch ln trn. Ti vng in tr m, dng in ch b gii hn bi cc linh kin mc mch ngoi, do mch ngoi phi bo m dng in IE < IEmax Khi IE tng n IV, mun tng thm dng IE ln na ta buc phi tng UE v s lng l trng v in t t n tnh trng di chuyn bo ha, c tuyn chuyn sang vng in tr dng.
Bng 6.1 : Bin thin ca in tr nn 1 (RB1) theo IE ca mt UJT tiu biu.
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IE (mA) RB1 ()
0 4600
1 2000
2 900
5 240
10 150
20 90
50 40
in tr lin nn RBB = RB1 + RB2 = 4K 12K ty thuc vo loi UJT v ph thuc vo nhit . R B1 - H s thun khit = = 0,45 0,82 khng ph thuc nhit . N ph thuc vo R BB vt liu ch to linh kin. in p nh: UP = UBB + UD = UBB + 0,7V (6. 6) Trong : UBB - in p t vo gia 2 Nn B1 v B2. UD - in p ngang qua it (UD = 0,7V). in p nh l tr s in p t ln cc pht UJT bt u dn. Dng in nh IP l dng in chy qua UJT tng ng vi tr s in p nh UP t ln cc pht E (hay cn gi l dng in kch khi). Tr s ca IP ch vi A. in p trng UV 2V l in p thp nht ni vng in tr m vi vng in tr dng ca c tuyn. Dng in trng IV l tr s dng in tng ng vi in p UE = UV. in p bo ha UEbh l in p ng vi dng IE = 50mA v in p UBB = 10v.
6.4.4. ng dng.
Ngi ta thng s dng on c tuyn in tr m to cc mch dao ng . Cho nn UJT thng c dng trong cc mch phng np to xung, trong mch nh thi cc mch bo ng v quan trng nht l dng kch khi cho n chnh lu Silic c iu khin hot ng. V d: UJT s dng trong mch dao ng phng np (hnh 6- 11) Trong s c ngun cung cp U1, ti RT, t phng np CT, trn R1 ta ly xung ra, R2 l in tr b nhit. Ta c th tnh in tr R2 theo cng thc sau: 0,7 R BB (6. 7) R2 = U1 Ngoi ra, in tr R2 cn c nhim v gii hn dng khi in p U1 qu ln.
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UE UP UEmin UB1
T CT np
t T1 T2
t UB2
t a/ b/
Hnh 6- 12 : a- S mch to dao ng phng np dng UJT. b- Dng sng ti cc chn cc E, B1 v B2 .
(6. 8)
(v T1 >> T2) T1 - thi gian UJT ngng dn (thi gian t CT np in) T2 - thi gian UJT dn in (thi gian t CT phng in)
iu kin mch hot ng tt nh sau: + ng ti RT phi ct c tuyn ti mt im vng in tr m hay ni cch khc dng in chy qua UJT phi c tr s: IV > I > IP U BB U P U BB U V > RT > hoc ti c gi tr l IP IV + khng lm gim UE cn c CT 0,01F + Nu CT > 1F, nn thm in tr ni tip vi CT bo v cc pht.
TM TT NI DUNG Thyristo l cc cu kin c 4 lp bn dn c sp xp theo trt t P-N-P-N. Chng l cu kin c 2 chn cc, 3 chn cc hoc 4 chn cc; c kh nng dn in mt chiu hoc hai chiu. y l cc cu kin in t ng ngt mch m hai trng thi ng v ngt mch ca n ph thuc vo tnh hi tip dng ca 4 lp bn dn trn. H thyristo gm c cc cu kin nh chnh lu silic c iu khin (SCR), triac, diac, chuyn mch silic c iu khin
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Chnh lu silic c iu khin (SCR) l cu kin c 4 lp bn dn c sp xp theo th t P1-N1-P2-N2 v hai ba chn cc: A-nt u vo bn dn P1, Ka-tt u vo bn dn N2, cc iu khin G u vo bn dn P2. SCR ch dn in mt chiu khi cp in p thun vo gia 2 cc A-K (UAK>0). Ty vo dng in iu khin IG ln hay nh m vng chn thun c cc gi tr khc nhau. Nu IG cng ln th gi tr in p nh khuu (hay in p khi ng) ca SCR cng nh. c tuyn Vn-Ampe ca SCR c on chn thun v on chn ngc. Nu in p t ln SCR bng hoc vt vng chn ngc th cu kin b nh thng v b hng; cn bng hoc vt vng chn thun th cu kin s dn in v SCR c kch khi ng, dng in chy qua SCR tng vt v n ch b khng ch bi in tr mc mch ngoi. iu kin SCR dn in l h s nhn thc l 12=1. Khi SCR dn in nu ta ngt dng iu khin th n vn dn in. SCR ch ngng dn khi in p ngun chuyn sang na chu k m hoc dng in gim xung di gi tr dng in duy tr IH. Khi mun SCR dn in ta li phi kch cho n dn in. Triac l cu kin cng c 3 chn cc nhng dn in hai chiu. Cc chn cc c gi l cc u ra MT1, MT2 v cc iu khin G. Triac c cu to t 5 lp bn dn sp xp theo trt t N-P-N-P-N sao cho to ra c cu trc nh l 2 SCR u song song v ngc chiu nhau. Vic kch cho triac dn in c th c thc hin bng 4 cch nhng thng thng ngi ta s dng 2 cch nhy nht l MT2 dng hn MT1 v cc G dng hn MT1 hoc MT2 v cc G cng m hn MT1. Khi triac dn in, mun n ngng dn ta phi gim dng in qua n xung di gi tr dng in duy tr IH hoc dng ci ngt in. Vic cho triac ngng dn kh khn hn so vi SCR v n dn in c hai chiu. Tranzito n ni (UJT) l tranzito ch c mt lp tip xc P-N v ba chn cc l cc Pht (E), Nn 1 (B1)v Nn 2 (B2). Nguyn l hot ng ca UJT khc hn vi cc tranzito khc hc. Khi in p t ln cc pht phi bng hoc ln hn gi tr in p nh (UP) th UJT mi dn in, nhng st p trn n gim v c tuyn Vn-Ampe c on in tr m. in p nh UP = UBB +0,7V; trong l h s thun khit, UBB l in p gia Nn2 v Nn1. Khi dng in t n gi tr IV dng in trng th st p trn UJT gim n tr s in p trng UV. T gi tr ny UJT chuyn sang vng in tr dng ca c tuyn. Ngi ta s dng on in tr m lp cc mch to xung phng np. CU HI N TP 1. Trnh by cu to, k hiu v nguyn l hot ng ca SCR? 2. Hy gii thch v c tuyn Vn-Ampe ca SCR? 3. Trnh by v iu kin SCR dn in? 4. Trnh by v cu to v nguyn l hot ng ca triac? 5. Hy v c tuyn Vn-Ampe v ch ra cc vng kch nhy nht cho triac trn th? 6. Trnh by v cu to, k hiu v c tuyn Vn-Ampe ca diac? 7. Trnh by v cu to v nguyn l hot ng ca UJT? 8. Nu cc tham s ca UJT v ng dng ca n? 9. K hiu sau y l ca cu kin no? a. SCR; 10. K hiu sau y l ca cu kin no? b. Triac; c. Diac; d. UJT
c. UJT;
d. FET
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TI LIU THAM KHO 1- Gio trnh Cu kin in t v quang in t Trn Th Cm, Hc vin CNBCVT, nm 2002. 2- Cc linh kin bn dn thng dng- Nguyn Nh Anh v nhm tc gi, NXB KHKT, nm 1988.
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CHNG 7 VI MCH TCH HP GII THIU CHNG Cc it v tranzito tuy rt nh nhng khi ghp vi nhiu linh kin th ng thc hin mt chc nng no th n vn thnh mt khi ln. Ngoi ra, do ch to ri rc nn cc tham s ca tranzito cng khng ging nhau tuy cng k hiu. Do , khi ghp nhiu linh kin ri rc s khng bo m tin cy cao v khng kinh t. V vy hng pht trin ca k thut in t sau bn dn l k thut vi in t. Chng 7 ny s gii thiu v khi nim v phn loi vi mch tch hp, v cc phng php ch to mch tch hp bn dn nh qui trnh quang khc, qui trnh plana v qui trnh cng ngh epitaxi-plana. Trong chng ny cng trnh by v cc phng php ch to cc cu kin in t trong vi mch bn dn: in tr, t in, cun cm, tranzito v it cng nh cc chi tit khc.ng thi, chng 7 cng trnh by v c im v cc tnh cht ca mt s loi vi mch tch hp hin ang c s dng rng ri trong lnh vc k thut in t nh vi mch tuyn tnh, vi mch s. NI DUNG: 7.1. KHI NIM V PHN LOI VI MCH TCH HP 7.1.1. nh ngha vi mch v cc u khuyt im. a. nh ngha: Mt vi mch tch hp bao gm mt chip n tinh th silic c cha cc linh kin tch cc v linh kin th ng cng dy ni gia chng. Cc linh kin ny c ch to bng cng ngh ging nh cng ngh ch to it v tranzito ring r. Qu trnh cng ngh ny gm vic nui cy lp epitaxi, khuch tn tp cht mt n, nui cy lp oxit, v khc oxit, s dng nh in li t nh r cc gin ... Vy, vi mch tch hp (Integrated circuits - vit tt l IC) l sn phm ca k thut vi in t bn dn. N gm cc linh kin tch cc nh tranzito, it..., cc linh kin th ng nh in tr, t in, cun cm, v cc dy dn, tt c c ch to trong mt qui trnh cng ngh thng nht, trong mt th tch hay trn mt b mt ca vt liu nn. Mi mt loi vi mch tch hp ch gi mt hoc vi chc nng nht nh no . b. u nhc im ca vi mch in t: So vi cc mch ri rc vi mch tch hp c nhiu u im, tuy nhin cng c mt s nhc im. u im: Vi mch tch hp c tin cy rt cao, kch thc nh, cha c nhiu phn t (IC bc 1 cha 10 linh kin, IC bc 2 cha 11 100 linh kin, IC bc 3 cha 101 1000 linh kin, IC bc 4 cha n 10000 linh kin hoc ln hn), gi thnh h, tiu th t nng lng in. Nhc im: - Do s dng nng lng nh nn hn ch tc lm vic. - Yu cu v n nh ngun cung cp cao. 141
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7.1.2. Phn loi vi mch tch hp. Mch t hp, hay cn gi l vi mch tch hp, l mt bc tin vt khc hn vi cc mch ri rc, cc linh kin ca mch c kt hp vi nhau tu theo cc phng php ch to. C rt nhiu cch phn loi vi mch tch hp. Ta xt mt s cch phn loi vi mch thng dng: a. Phn loi theo tnh cht d liu c x l bng IC : chia thnh 2 loi sau: - IC tuyn tnh: L loi IC c kh nng x l cc d liu xy ra lin tc. - IC s: L loi IC c kh nng x l cc d liu xy ra ri rc. b. Phn loi theo cng ngh ch to: chia thnh 4 loi sau: - Vi mch bn dn (hay cn gi l vi mch n khi): Trong cc vi mch bn dn, cc phn t tch cc v th ng c ch to trn mt n tinh th bn dn (Si (N) hoc Si (P)) lm cht nn. Vic ch to vi mch bn dn ch yu da trn qu trnh quang khc theo cc phng php Plana, Plana- epitaxi hay siloc. - Vi mch mng mng: Trong ch tch hp cc linh kin th ng trn l thy tinh cch in hay Ceramic bng phng php bc hi v lng ng trong chn khng, cn cc phn t tch cc c hn gn vo mch nh cc linh kin ri rc. u im ca loi ny l ch to c cc in tr v t in c cht lng cao v sai s nh. - Vi mch mng dy: Trong ch tch hp cc linh kin th ng trn l cht bn dn bng phng php quang khc qua khun cn cc linh kin tch cc c hn vo nh linh kin ri rc. - Vi mch lai: Trong tch hp c cc linh kin tch cc v cc linh kin th ng trn mt l thu tinh hoc Ceramic theo c hai cng ngh ch to vi mch bn dn v vi mch mng mng. Vi mch lai c tin cy cao hn loi vi mch bn dn. Tuy nhin, cng ngh ch to vi mch lai cn phc tp nn gi thnh ca n cao hn, iu ny hn ch vic s dng cng ngh ny. c. Phn loi theo loi tranzito c trong IC: chia thnh 2 loi nh sau: - Vi mch lng cc: Trong cc tranzito c tch hp l cc tranzito lng cc. Vi mch lng cc c tc chuyn mch cao (c 5 ns n 20 ns), cng sut tiu tn nhit t vi W n vi trm mW, nhng mc tch hp thp khong 100 phn t trong mt vi mch v kch thc ca cc tranzito v cc phn t th ng ln. - Vi mch MOS: L cc vi mch, trong cc tranzito c tch hp l loi tranzito trng, thng thng l cc tranzito trng loi MOS. Vi mch MOS c tch hp bc 3, bc 4 (c 10000 phn t hoc hn na trong mt IC). Cc vi mch MOS khng cn tch hp in tr v c th dng tranzito MOS lm in tr. Vi mch MOS c kh nng chng nhiu cao nhng thi gian chuyn mch chm, cng sut tiu th thp hn IC lng cc nhiu d. Da theo s phn t c tch hp trong IC: chia thnh 4 loi sau: Vi mch loi SSI: s phn t c tch hp < 12 Vi mch loi MSI: s phn t c tch hp t 12 100 Vi mch loi LSI: s phn t c tch hp t 100 1000 142
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Vi mch loi VLSI: s phn t c tch hp > 1000 Trong cc loi vi mch ny th vi mch n khi c sn xut v s dng nhiu nht do cng ngh ch to n gin, gi thnh r, thi gian chuyn mch nhanh v s phn t tch hp kh cao. 7.2.CC PHNG PHP CH TO MCH TCH HP BN DN
7.2.1. Qu trnh quang khc. Trc tin ta phi to mt khun gi l khun nh sng. Sau trn b mt tm bn dn Si ta to mt lp oxit silic SiO2 bng phng php gia cng nhit nhit 10000C n 12000C trong hi nc. Tip theo l ph lp cm quang v sau t khun nh sng ln trn lp cm quang, ri chiu nh sng vo khun nh sng. nh sng s tc ng ln lp cm quang theo ng cu hnh ca khun nh sng. Sau b khun nh sng ra v tin hnh hin hnh v nh hnh. Tip theo l qu trnh n mn bng cc dung dch ha hc nhng ch c nh sng chiu vo. Sau ta loi b lp cm quang v kt qu c tm bn dn trn c ph mt lp bo v bng SiO2 theo cu hnh yu cu. Mi lp ph bo v bng SiO2 theo cu hnh yu cu c gi l mt mask (mt n), mi ln to ra mt mask phi c lp li y cc bc nu trn, nn khi ch to vi mch in t m s mask cng gim th s cng kinh t. 7.2.2. Qu trnh plana. y l loi cng ngh cho php gia cng cc phn t ca mch in t trn b mt ca mt phin n tinh th bn dn silic. Cng ngh plana l cng ngh kt hp hai qu trnh quang khc v khuch tn. Sau khi to ra mask ta s tin hnh khuch tn tp cht vo bn dn theo cu hnh ca mask. Khi ch to tranzito lng cc th s mt n (mask) s nhiu nht. Cc it, in tr, t in cng c ch to ng thi cng vi qu trnh ch to tranzito. Trnh t ca qu trnh plana nh sau (xem hnh 7-1): 1. Gia cng tm bn dn silic tinh khit: T mt cht silic t nhin qua cng ngh lm sch to ra mt cht silic tinh khit c sch t nht t 99,99999%. Tm silic c ca ct ng kch thc v gia cng b mt. Tm bn dn ny c dng lm v thng c b dy khong 100m. 2. Oxy ha tm bn dn : hnh 7-1a Qua qu trnh oxy ha to ra trn hai mt ca tm silic hai lp SiO2. B dy lp SiO2 c th khng ch mt cch chnh xc nh thi gian oxy ha, nng oxy thi vo l v tc di chuyn ca tm bn dn trong l.
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nh sng SiO2 Si a/ Khuch tn SiO2 N Si(P) d/ e/ Si(P) b/ C B E Mt n Cm quang SiO2 Cm quang SiO2 Si(P) N+ c/ SiO2 P N Si(P)
Hnh 7 - 1 : Trnh t ca cng ngh Plana 3. Cho n mn lp SiO2 pha di tin hnh khuch tn tp cht vo (v d loi P), v l bn dn tinh khit. 4. Ph lp cm quang: hnh 7-1b,c Cht cm quang l mt hp cht ha hc c c im l n s tr nn bn vng hoc khng bn vng trong mt dung mi c xc nh trc khi n c chiu sng. 5. Quang khc v n mn chn lc lp SiO2 theo cu hnh ca khun nh sng, ta s thu c mt n u tin. Xem hnh 7-1c. Tip tc cho n mn bng cch ngm vo dung dch axit flohydric HF, sau b lp cm quang i ta s to ra c mt l thng qua lp SiO2 n tinh th silic. Kch thc ca l thng tu thuc vo mt n. 6. Khuch tn tp cht loi N (nguyn t nhm 5 - tp cht cho) vo to vng colect khi ch to tranzito loi N-P-N. Xem hnh 7-1d 7. Sau oxy ha ln th hai to lp SiO2. 8. Ph lp cm quang, che mt n, chiu sng v cho n mn ta thu c mt n th hai. 9. Khuch tn bn dn loi P (nguyn t nhm 3- tp cht nhn) to vng baz 10. Oxy ha to lp SiO2. 11. Quang khc v n mn chn lc ta thu c mt n th ba v tin hnh khuch tn to vng N+ ca Emit. 12. Oxy ha + quang khc v n mn ta c mt n th t gn cc in cc E,B,C. Xem hnh 7-1e 7.2.3. Quy trnh cng ngh epitaxi- plana.
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a/
b/
Hnh 7 - 2 : a- Mt mch in gm mt in tr, hai it v mt tranzito. b- Mt ct ca vi mch th hin s mch (a). Cng ngh epitaxi- plana tng t nh cng ngh plana. Epitaxi l qu trnh nui mt lp n tinh th mng bn trn mt tinh th khc. Lp n tinh th mng ny c gi l lp epitaxi. Qu trnh cng ngh epitaxi- plana c m t qua v d mt mch tch hp nh hnh 7-2a,b. a. Nui lp epitaxi: Mt lp epitaxi loi N dy khong 25 micron (1 micron = 104 Angstrom) c nui bn trn mt lp nn bn dn loi P. Lp bn dn nn ny c in tr sut khong 10.cm, tng ng NA = 1,4.1015 nguyn t/cm3. Lp epitaxi loi N c th chn in tr sut t 0,1 n 0,5 .cm. Trn lp epitaxi ph mt lp cch in SiO2 mng khong 0,5micron. Lp SiO2 c to nn nh qu trnh oxy ha trong l nung nng khong 10000C. (Xem hnh 7- 3a). b. Khuch tn cch ly:
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c/
in tr P N
Ant ca it P N P
Phn gc B P N
d/
Catt ca it (N+) P N P N P
Cc pht E (N+) P N
Bn dn nn loi P
Hnh 7 - 3 : Qu trnh cng ngh epitaxi - plana ch to vi mch theo s hnh 7-2. Trong hnh 7 - 3b ch ra kt qu ca qu trnh khuch tn cch ly. Bng phng php quang khc v n mn lp SiO2 4 v tr, to ra ba vng cch in nhau. Cc phn SiO2 cn li l mt mt n tin hnh khuch tn tp cht nhn vo. Cc vng N trong hnh 7- 3b c gi l cc o cch ly v chng c phn chia bng hai tip xc P-N kiu lng- i- lng. Cn ch l nng tp cht nhn NA khong 5.1020/cm3 trong vng gia cc o cch ly v ta s to c vng P+ c nng ht dn cao hn nhiu so vi nn P ngn chn vng ngho ht dn ca tip xc phn cc ngc gia nn v vng cch ly. c. Khuch tn phn gc B v phn pht E: Tip theo l cc qu trnh ca cng ngh plana to ra phn bn dn P ca in tr, ant ca it v cc gc ca tranzito. Cn ch l phn bn dn P ny c in tr sut ln hn nhiu in tr sut ca cc vng cch ly. to ra phn bn dn N+ ca phn pht ca tranzito, catt ca it th ta cho khuch tn tp cht loi N vi nng tp cht cao. d. Qu trnh kim loi ha nhm: Cc phn t ca s mch in hnh 7-2 c tch hp, chng hon ton cch ly nhau. By gi ta phi ni ghp chng theo s mch in yu cu. Lp u ni gia cc linh kin c thc hin bng vic lng ng trong chn khng mt mng mng kim loi nhm ln trn cng, sau s dng k thut quang khc loi b cc phn nhm khng cn ni gia in tr, it v tranzito. Cui cng l bc gn cc chn cc cho cc phn t ca IC. 7.2.4. Phng php ch to vi mch tch hp tranzito trng. 146
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Tranzito trng tch hp loi MOS ch chim khong 5% din tch b mt yu cu bi mt tranzito hai lp epitaxi trong cc mch tch hp thng thng. Ch cn mt bc khuch tn trong quy trnh ch to tranzito trng loi MOS knh cm ng. Trong bc ny hai vng bn dn loi N nng cao c khuch tn vo bn dn loi P c nng tp cht thp to cc ngun v cc mng. Mt lp cch in SiO2 c nui cy, v cc l h c khc axit gn in cc ngun v cc mng. Kim loi cho cc tip xc ny c bc hi ng thi cng vi cc ca hon thnh linh kin l tt nht. Xem hnh 7-4a,b.
Ngun S N+
Mng D N+
S N+
D N+
bn dn P a/
bn dn loi P b/
Hnh 7 - 4 : FET - MOS knh cm ng loi N. a- Cc ngun v cc mng c khuch tn vo bn dn . b- Linh kin hon thin. Ngoi ra, trong cc vi mch, tranzito MOS l mt in tr c tr s xc nh bng in p t ngang qua knh dn (R = 1/S c th ti hng trm K). Cng ngh ch to FET cng s dng hai cng ngh plana v epitaxi- plana. VD D G S R= 1/ S
Hnh 7 - 5:
Tranzito MOS nh mt in tr
7.2.5. Phng php cch in trong vi mch. Trong cc vi mch tch hp ngi ta thng dng 2 phng php cch in l cch in bng tip xc P-N v cch in bng in mi. a. Cch in bng tip xc P-N. Tip xc P-N khi c phn cc ngc th in tr ca n rt ln. Do vy, trong vi mch in t ngi ta s dng tip xc gp - phn cc ngc cch in 147
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b. Cch in bng cht in mi. Trong phng php ny cc phn t s cch in vi nhau bng lp in mi, lp in mi ny bao quanh phn gp ngn cch phn gp vi . Xem hnh 7-6a.
E P N
B SiO2
B P
N+ SiO2
N Si a tinh th Si b/
Hnh 7 -6 : Phng php cch in bng cht in mi: a- vi l tinh th Si; b- vi l a tinh th Si.
a/
Mt phng php cch in d dng hn l dng l bn dn a tinh th v qu trnh nui lp a tinh th khng i hi cht ch nh khi nui lp n tinh th. Xem hnh 7-6b. 7.3. CC CU KIN C TCH HP TRONG VI MCH 7.3.1. in tr. a. in tr bn dn - y l in tr n khi bn dn loi P hoc loi N. Gi tr in tr ca khi bn dn c xc nh bng in tr sut, di v din tch tit din ca vng vt liu: L (7.1) R = S Trong : L- di ca khi bn dn S- din tch tit din ca khi bn dn - in tr sut ca cht bn dn - in tr khuch tn l cc in tr c cy trn mt bn dn. in tr khuch tn c tnh theo cng thc( 7.2): Nu in tr khuch tn pha tp cht cho ND th in tr c xc nh:
RKT = Trong :
L q n N D S
( )
(7.2)
L- di ca lp in tr khuch tn S- Din tch tit din ca lp in tr. Nu in tr khuch tn c pha tp cht nhn NA th ta ch vic thay cc gi tr linh ng ca l trng v nng NA vo cng thc 7.2. Trong cc vi mch tranzito trng, ngi ta s dng in tr l tranzito trng vi tr s ph thuc vo in p t ln cc ca v cc mng.
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in tr mng mng c ch to bng phng php bc hi v lng ng trong chn khng nhit cao ln trn mt l cht in mi. Vt liu dng lm in tr thng dng l hp kim Nicrm. in tr ch to theo phng php ny c chnh xc rt cao (khong 1%). y l u im c bit ca linh kin mng mng.
7.3.2. T in trong vi mch. Trong vi mch tch hp s dng ba loi t in c bn sau: T in dng in dung ca tip xc P-N khi phn cc ngc T in dng ba lp Kim loi- Oxit- bn dn, gi l t in MOS T in mng mng a. T in dng tip xc P-N. T in dng tip xc P-N c ch to ng thi cng vi qu trnh ch to tranzito. Gi tr in dung ca loi t ny khi in p t ln nh c tnh theo cng thc 7.3: 0 S (7. 3) C = d Trong : S- din tch mt tip xc d- b dy lp tip xc Tuy vy, trong cng ngh ch to vi mch ngi ta rt hn ch ch to t in v n chim din tch ln trn b mt silic. b. T in MOS. T c hnh thnh t ba lp: Kim loi- Oxit (SiO2) - Bn dn c nng tp cht cao. Thng thng lp in mi SiO2 dy c 0,08 n 0,1m cho tr s in dung nh nhng in p nh thng ln: Tr s in dung khong t 300 650pF/mm2 vi in p nh thng khong t 7v n 50v. c. T in mng mng. T in mng mng c ch to theo cng ngh mng mng. T gm hai m l kim loi v lp in mi mng gia, tt c c t ln mt l cht in mi. B dy ca lp in mi khong t 100 n 200 Angstrom. Gi tr in dung c th tnh theo cng thc 7.3 vi S l din tch m t v d l b dy ca cht in mi. 7.3.3. Cun cm trong vi mch.
Trong vi mch bn dn cc mch thng c thit k khng c cun cm tr trng hp khng th b qua c. Trong trng hp bt buc phi c cun cm th dng loi it c bit gi l it cm ng hoc loi cun cm mng mng.
a. Cun cm l it cm ng.
Loi it ny cho in cm khong vi milihenry (mH). it cm ng gm c vng bn dn P c nng pha tp ln hn, cn vng bn dn N c nng tp cht rt nh, gn nh bn dn nguyn tnh (xem hnh 7-7a). Khi t ln it mt in p thun, cc l trng phun 149
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vo bn dn N, mt s t b ti hp, s cn li s cn mt khong thi gian khuch tn tip vo bn dn N. Nh th dng in thun c xu hng chm pha so vi in p. Do vy, n thc hin chc nng ca mt cun cm. Vng bn dn N cng di th dng ht dn bay qua n cng lu v tr s in cm cng ln.
b. Cun cm mng mng. Cun cm mng mng c ch to di dng ng xon trn hoc xon vung mng mng. Xem hnh 7-7b. Cun cm ny c th t gi tr c 0,1mH khi h s phm cht Q = 10.
P+
a/ b/
Hnh 7-7 :
Trong vi mch tch hp ngi ta dng tt c cc loi tranzito thng s dng trong mch ri. Hai loi thng dng nht l tranzito lng cc v tranzito trng.
a. Tranzito lng cc. Trong vi mch tch hp ngi ta thng dng tranzito loi N-P-N v: - Khi khuch tn tp cht loi N th n rt d ha tan vo silic. - linh ng ca in t ln gp hai ln linh ng ca l trng. V vy thi gian tc ng ca vi mch nhanh hn. b. Tranzito trng. Trong vi mch tch hp thng dng JFET v MOSFET knh c sn trong k thut tng t nh to ra tng khuch i vi sai, cc tng ti Emit... Cn MOSFET knh cm ng thng c dng trong k thut s. Khi ch cn dng MOSFET mt loi knh th ngi ta thng dng loi knh P v n cho tin cy cao hn, tnh chng nhiu cao hn v n ch s dng logic m. Khi yu cu dng c hai loi knh P v knh N, phi ch to chng trn cng mt silic v c gi l MOSFET kiu b v k hiu l CMOSFET. 7.3.5. it trong vi mch
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Trong cc mch vi in t thng khng ch to trc tip it m thng ch to tranzito ri sau ni tt cc chn cc to ra it. Thng thng c hai cch ni tt tranzito thnh it sau y.
a. Ni tt tranzito thnh it trong mch cch in bng cht in mi. C 5 cch ni tt tranzito thnh it, xem hnh 7-8a,b,c,d,e. Mi cch ni s cho mt loi it vi cc tham s ring ca n.
C B E
N+
P N a/ b/ c/ d/ e/
Hnh 7- 8 : Cc cch ni tranzito thnh it trong mch cch in bng in mi b. Ni tt tranzito thnh it trong mch cch in bng tip xc P-N. Tranzito trong mch vi in t cch in bng tip xc P-N l cu trc 4 lp bn dn nn c th ly bn u ra: E,B,C v . V ta c 5 cch u ni tranzito thnh it. Xem hnh 79a,b,c,d,e.
N+ P N Pa/
N+ P N P b/
N+ P N P c/
N+ P N P d/
N+ P N P e/
N+ P N P
Hnh 7-9 : Cc cch ni tranzito thnh it trong mch cch in bng tip xc P-N 7.4. VI MCH TUYN TNH 7.4.1. Gii thiu chung v phn loi vi mch tuyn tnh Vi mch tuyn tnh c hiu l cc t hp vi mch c cc tn hiu trn li ra t l vi tn hiu trn li vo theo quy lut ng thng. Cc vi mch tuyn tnh thng i hi cc phn t mc thm mch ngoi nhiu hn so vi cc IC s hon thnh mt chc nng no . iu ny khin cho cc s s dng vi mch tuyn tnh nhy cm vi nhiu bn ngoi hn v bi vy kh s dng hn. Vi mch tuyn tnh thng c phn thnh 2 loi chnh l: t hp vi mch tranzito-it v vi mch s dng chuyn dng, v vi mch khuch i thut ton. a. T hp vi mch tranzito - it v vi mch s dng chuyn dng: Gm t hp cc it hay tranzito c nhng ch tiu k thut ging nhau. V d: t hp it CA3039, t hp tranzito CA3813B, t hp hn hp tranzito it CA3093E - ta c th s dng nh cc it v tranzito ri rc.
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Loi vi mch ny c s dng trong cc b khuch i trung tn trong my thu hnh, thu thanh v cc my thu pht chuyn dng khc, trong cc b iu khin ca h thng iu khin t ng, trong cc b khuch i m tn, cc mch n p v mch iu chnh cng sut, loi vi mch ny c th dng lm mt chc nng hoc nhiu chc nng. b. Vi mch khuch i thut ton: Mch khuch i thut ton l mch khuch i tn hiu in thc hin cc php tnh v thut ton khc nhau trn cc i lng tng t, trong s mch c hi tip m su. Hin nay cc b khuch i thut ton ng vai tr quan trng v c ng dng rng ri trong k thut khuch i, to tn hiu hnh sin v xung, trong b n p v b lc tch cc,v.v... Tuy nhin, trong cc b khuch i thng thng nhng tnh cht v tham s hon ton c xc nh bi s mch ca n, cn trong b khuch i thut ton th cc tnh cht v tham s ca n c xc nh bi cc tham s ca mch hi tip. Cc b khuch i thut ton c thc hin theo s khuch i dng mt chiu vi gi tr thin p vo ra bng khng. Chng cng c c trng bi h s khuch i ln, tr khng vo cao v tr khng ra thp. Mt b khuch i thut ton l tng phi t c cc tiu chun sau: - H s khuch i in p Ku - Tr khng vo Zvo - Tr khng ra Zra 0 - Di tn s lm vic f
7.4.2. Cu trc bn trong ca vi mch khuch i thut ton: a. Cu trc ca vi mch khuch i thut ton - S khi ca b khuch i thut ton tch hp: Hnh 7-12 trnh by s khi ca b khuch i thut ton.
Vo vi sai
m v dch mc
Tng ra ti Emito
Ngun dng c nh
Tng bo v
B khuch i thut ton bao gm tng vo khuch i vi sai m bo c h s khuch i cao, sau l mch dch mc v mch ra cho php nhn c tn hiu ra cn thit v tr khng ra yu cu. + Tng vo vi sai: Cu trc in hnh ca mt tng khuch i vi sai lm vic theo nguyn l cu cn bng song song m t trong hnh 7 -13: Hai nhnh cu l RC1 v RC2, cn hai nhnh kia l cc tranzito T1 v T2 c ch to trong cng mt iu kin sao cho RC1 = RC1 v hai tranzito T1, T2 c cc tham s ging ht nhau. in p ra Ura ly trn mt cc gp, cn IK l ngun dng n 152
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nh c th to ra t mt in tr u vi m ngun, hoc to ra nh cc tranzito u theo mch ngun dng. Nh vy IK = IE1 + IE2 = const. +ECC
IC1
IC2 T2
RC2 Ura
IE1 IK -ECC
IE2
Trong hnh, tranzito T2 c mc theo s cc pht chung, do Uvo1 s l li vo o ca mch khuch i thut ton; cn tranzito T1 c mc theo s cc gp chung nn Uvo2 s l li vo khng o (hay li vo thun) ca mch khuch i thut ton. H s khuch i in p ca tng vo vi sai: KU =
U ra U vo2 U vo1
(7. 4)
H s KU rt ln, khong t 104 n 105. Cng thc tnh tr khng vo: Zvo =
U vo I vo2 I vo1
(7. 5)
Do vy, khi Zvo = th Ivo = 0, v nh vy ta c Ivo2 = Ivo1 m bo Ivo2 = Ivo1 th IE1 = IE2 = Ik/2 v Ik phi n nh nn phi chn hai tranzito T1 v T2 ging ht nhau. + Ngun dng n nh : IK n nh thng dng mt ngun dng n nh. + Tng ra mc ti Emit (cc gp chung). B khuch i thut ton yu cu c tr khng ra Zra nh, ngha l dng in ra l ln nht, nn tranzito tng ra phi mc theo s cc gp chung. Nh vy, h s khuch i in p ca tng ra KU 1. V iu ny c ngha l h s khuch i ca b khuch i thut ton ch yu tng vo vi sai v cc tng trung gian. + Tng m v dch mc: T u vo ti u ra, ngoi tng vo vi sai cn c cc tng khuch i trung gian khuch i cng sut cho tng ra. S lng cc tng khuch i trung gian ny tu thuc vo h s khuch i ca b khuch i thut ton. + Tng bo v:
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Khi b khuch i lm vic vi dng in ln tng ra, s d lm hng cc tranzito, do phi dng tng bo v phn dng cho tng cui. + B bin i dng gng: B bin i dng gng dng bin i mt ngun dng n nh thnh nhiu ngun dng n nh nhm cung cp cho cc tng khc. Mch ny thng dng cc mch c yu cu cht lng cao. + Hai ngun nui (gi l ngun lng cc) ECC: Cc IC khuch i thut ton tiu chun lm vic vi in p ngun nui bng 15V. b. K hiu ca IC khuch i thut ton trong s mch: Xem hnh 7-14. +ECC Uvo o (UN) Uvo thun (UP) -ECC Ura
Hnh 7 - 14 : K hiu b khuch i thut ton c. Cc tham s v c tuyn ca b khuch i thut ton. 1. c tuyn truyn t in p: c tuyn truyn t in p l c tuyn quan trng nht ca b khuch i thut ton biu th mi quan h gia in p ra v in p vo ca mch : Ura = f(UP, UN)
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c tuyn truyn t in p c biu din bng hai ng ng vi cc li vo o v li vo khng o. Mi ng c tuyn gm c cc on nm ngang v mt on dc. Xem hnh (7 - 15). - on nm ngang tng ng vi ch tranzito tng ra thng bo ha hoc ngt dng. Ti y, khi thay i in p tn hiu trn li vo th in p ra khng i v c xc nh bng cc gi tr Ura max gi l gi tr in p ra cc i. Trong cc IC khuch i thut ton gi tr Ura max thp hn in p ngun cung cp ECC khong t 1vn n 3vn. - on dc ca c tuyn truyn t biu th s ph thuc t l ca in p ra vi in p vo. y l mt ng thng vi gc nghing xc nh h s khuch i ca b khuch i thut ton khi khng c hi tip ngoi. ng c tuyn l tng s i qua gc ta , tc l khi Uvo = 0 th Ura = 0 v c gi l trng thi cn bng ca b khuch i thut ton. Trn thc t trng thi cn bng kh thc hin hon ton, c ngha l khi Uvo = 0 th Ura 0. V vy, mun cho in p ra bng khng, ta cn phi t ti li vo b khuch i thut ton mt hiu in p no gi l thin p khng U0 (khong vi mV). 2. H s khuch i in p vi sai c tnh theo cng thc: KU =
U ra = 10 4 10 5 U vo
(7. 6)
Gi tr ca KU ln cho php thc hin hi tip m su nhm ci thin nhiu tnh cht quan trng ca b khuch i thut ton. Trong gii hn min khuch i, in p ra t l vi in p vo theo cng thc: U ra = KU . UV = KU ( UP - UN ) (7. 7) H s khuch i ng pha: Nu trn u vo thun v o t cng mt in p UG1 ng pha th Uvo = 0, v nh vy in p Ura cng cn phi bng khng. Nhng thc t iu ny khng hon ton ng, tc l h s khuch i tn hiu ng pha KG1 khng bng 0 . KG 1 =
U ra 0. U G 1
i vi mt b khuch i thut ton tt th cn phi c KU ln v KG nh. S ph thuc vo nhit ca cc tham s ca b khuch i thut ton s gy nn tri thin p u vo v in p u ra theo nhit . cn bng ban u cho b khuch i thut ton, ngi ta a vo mt trong cc u vo ca n mt in p ph thch hp hoc mt in tr iu chnh dng thin p mch vo.
3. Tr khng ra: Tr khng ra l mt trong cc tham s quan trng ca b khuch i thut ton n c tr s nh (khong t vi chc n vi trm ). 4. Tr khng vo ca b khuch i thut ton: Tr khng vo ca b khuch i thut ton thng c phn bit tr khng vo i vi tn hiu vi sai v tr khng vo i vi tn hiu ng pha. i vi cc b khuch i thut ton dng tranzito lng cc li vo, tr khng vo i vi tn hiu vi sai RV vo khong vi M, cn tr khng vo i vi tn hiu ng pha RG1
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bng vi G. Dng vo ban u ca cc b khuch i thut ton lng cc tiu chun gii hn t 20 n 200 nA, cn cc b khuch i thut ton dng tranzito trng khong vi nA. 5. c tuyn tn s : c tnh tn s biu th s ph thuc ca h s khuch i vo di tn s lm vic. Hnh 7 - 16 ch ra c tuyn bin tn s ca b khuch i thut ton KU = (f). KU Khi khng c mch hi tip m KU0 Khi c mch hi tip m K 2
U0
KU
KU
fC0
fT fC
f (Hz)
Qua th hnh (7 -16) ta thy h s khuch i in p KU b gim xung khi tn s cao. Bt u t tn s ct fC vi dc u -20dB/decac ca trc tn s. Tn s fT ng vi trng hp khi h s khuch i ca b khuch i thut ton bng 1 nn gi l tn s khuch i n v. Tn s ct fC (hay tn s bin) ng vi trng hp khi h s khuch i in p b gim i 2 ln so vi h s khuch i tn s thp v c gi l di thng tn. Khi khng c mch hi tip m th fC rt thp, c vi chc Hz.
8
1 2 3 4 8 7 6 5 2 3 4
Hnh 7 - 17 : S chn ca b khuch i thut ton 741
7 6 5
1. iu chnh in th khng 2. Li vo o 3. Li vo thun 4. in p ngun m 5. iu chnh in th khng 6. Li ra S chn ca b khuch i thut ton loi 741 vi cc loi v khc nhau c m t hnh 7 -17. 156
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Nhm tng tr khng vo ln ti hng chc M ngi ta thng dng tng vo vi sai l cc tranzito trng, v tr khng ra nh nh tng ra u theo s aling- tn, v d nh b khuch i thut ton kiu LF356. 6. Mt s ng dng ca b khuch i thut ton Mt s mch ng dng c bn dng b khuch i thut ton lm vic trong min tuyn tnh ca c tuyn truyn t v c s dng hi tip m iu khin cc tham s c bn ca mch. + B khuch i o. B khuch i o cho trn hnh 7 - 18. If I1 NI0 UV R1 U0 Ura Rf
B khuch i o trong hnh c hi tip m in p song song qua in tr hi tip Rf. u vo khng o ni vi t. Tn hiu vo qua R1 t ln li vo o. Nu coi b khuch i thut ton l l tng th in tr vo v cng ln v dng in vo v cng b: ZVo I0 0 Khi , ti nt N trong s c phng trnh nt dng in v ta c: I1 I f (7. 9) Khi h s khuch i K th in p li vo U0 =
U ra 0, do : K
(7. 10)
UV R1
KU =
= -
U ra Rf = Rf R1
T y c h s khuch i in p ca b khuch i o:
U ra UV
(7. 11)
Du "-" trong biu thc biu th tn hiu vo v ra ngc pha nhau. + B khuch i khng o. S b khuch i khng o m t trong hnh 7 -19. B khuch i khng o gm c mch hi tip m in p t vo li vo o, cn tn hiu vo t ti li vo khng o ca b khuch i thut ton.
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V in p gia cc u vo ca b khuch i thut ton U0 = 0 nn quan h gia in p UV v Ura c xc nh bng cng thc sau: UV = Ura
R1 R1 + R f
(7 - 12)
U ra R + Rf R = 1 = 1+ f U vao R1 R1
(7. 13)
Khi s dng b khuch i thut ton khuch i tn hiu ngi ta thng dng b khuch i o v mch n nh hn.
UV
U0 If I1 Rf R1
Ura
Hnh7 - 19 : B khuch i khng o. 7.4.3.Vi mch n p Vi mch n p nhn li vo mt in p khng n nh v to ra li ra mt in p n nh. Vi mch n p gm c 2 loi l vi mch cho in p ra n nh c nh v vi mch n p cho in p ra n nh c th iu chnh c. - Vi mch n p in p ra n nh c nh thng c 2 h thng dng: H 78XX n nh in p dng; H 79XX n nh in p m. V d: 7805: in p ra c nh + 5V, 7905 c in p ra c nh 5V 7812: in p ra c nh + 12V, 7909 c in p ra c nh 9V 7809: in p ra c nh + 9V, 7912 c in p ra c nh 12V - Vi mch n p c in p ra n nh c th iu chnh c nh: LM317: in p ra iu chnh t 1,2V n 37V LM337T: in p ra iu chnh t - 1,2V n - 37V A723C: in p ra iu chnh t 2V n 37V V d: B n p t 1,25vn n 25vn: Vi mch LM 317 c th cung cp cho u ra mt dng in n 15A trong di in p t 1,2vn n 37vn. Vi mch LM c chn s 1 l u vo, chn s 2 l chn iu chnh v v l chn th 3 v l u ra. Trong hnh 7 -20, in p vo cn phi lc trc khi a vo LM 317. C th b t C1 nu in p vo c cung cp t mt ngun t rt gn LM 317. in tr R1 dng iu chnh in p ra.
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Hnh 7 - 20 : Vi mch n p loi LM 317 7.5. VI MCH S 7.5.1. Gii thiu v phn loi vi mch s a. Gii thiu. Vi mch s gm cc mch lgc c bn thc hin cc thut ton logic v cc hm logic khc nhau. Cc vi mch s l cc thit b 2 trng thi, mt trng thi gn vi 0 vn hoc t (gi l mc thp hoc k hiu l L), v trng thi kia gn vi in p cung cp cho mch (gi l mc cao hoc k hiu l H). Cc mch tch hp s c th x l cc bit nh phn ring l hoc cc t nhiu bit nh phn. Hu ht cc vi mch s c s dng hin nay l cc vi mch s ch to trn c s cc tranzito lng cc v tranzito trng. Mi mt vi mch s hu nh u c th thc hin c mt chc nng hon chnh, nn chng cn rt t linh kin mc thm bn ngoi.
Cc tham s c bn ca vi mch s: - Mc logic: mc logic 0 v mc logic 1 Cc mc logic ny l cc tr s in p tng ng vi mc logic thp v mc logic cao, ty tng loi m n c tr s in p khc nhau - Ngun nui: ngun cung cp phi m bo n nh cao. - Kh nng ghp ti: biu th kh nng ghp c bao nhiu li vo ca cng logic ti mt li ra ca mt cng cho trc. - Tc chuyn mch hay cn gi l tc ng nhanh ca vi mch: Loi cc nhanh ttb 5 nsec Loi nhanh ttb = 5 10 nsec Loi trung bnh ttb = 10 100 nsec Loi chm ttb > 100 nsec - Cng sut tiu th: cng sut tiu th ca vi mch s ph thuc vo tn hiu t ln n. - Di nhit lm vic: mi hng sn xut c mt ch tiu nhit khc nhau. b. Phn loi Cc vi mch hm logic c bn trn tranzito lng cc v tranzito trng gm cc loi: Tranzito logic vi lin kt trc tip (TL); in tr - tranzito logic (RTL); it - tranzito logic (DTL); Tranzito - tranzito logic (TTL); Logic MOS; Logic CMOS (complementary MOS).
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Hai h vi mch s quan trng nht v c s dng nhiu nht l h TTL/LS v h CMOS. H TTL l cc vi mch trong tch hp cc tranzito lng cc vi mt tranzito nhiu tip xc gc- pht. Mi mt tip xc BE l mt li vo. Cn h CMOS trong tch hp cc tranzito trng MOS knh cm ng loi P v N u b nhau. H TTL c tc chuyn mch cao (ttb = 6 15 nsec), cng sut tiu th thp (45 15 W) v kh nng chu ti ln (h s ti n > 10) Dng vo ca MOS rt nh v th in tr li vo ca tranzito MOS rt ln cho php ch to vi mch c kh nng chu ti cao (n = 10 20), c chng nhiu cao v cng sut tiu th rt nh.
7.6. VI MCH NH 7.6.1. Gii thiu v phn loi b nh. a. nh ngha: B nh l cu kin c kh nng lu tr d liu v cc chng trnh iu khin di dng s nh phn (0;1). Kh nng nh d liu c th lu di (b nh c nh) nhng cng c th tm thi (b nh tm thi). Phn t nh nht nh c 1 bit nh phn gi l t bo nh (memory ceel). Tin tc tr trong b nh gm mt s bit gi l T nh. T nh c di 8 bit gi l 1 byte; di 16bit gi l 1 t na li; di 32 bit gi l T mt li. Qu trnh a d liu vo b nh gi l vit; qu trnh ly d liu ra gi l c. Thao tc Vit v c c tin hnh tng T c di ty vo tng loi my theo mt chu k khp kn gi l Chu k vit hoc Chu k c. Thi gian truy cp b nh l khong thi gian k t lc bt u chu k vit hoc c n khi d liu c ghi vo t bo nh hoc xut hin trn u ra. B nh ch vit mt ln gi l b nh ch c. B nh c th vit i vit li nhiu ln gi l b nh vit v c. b. Phn loi b nh Ty theo vt liu, cu trc, cng ngh m b nh c chia lm nhiu loi. Da vo vt liu ch to ta c b nh bn dn v b nh t. B nh bn dn rt thng dng hin nay v c thi gian truy cp nh, hay ni cch khc l tc c-vit cao. B nh t c tc truy cp thp nhng kh nng tr d liu ln, khng tiu th nng lng trong qu trnh tr tin. 7.6.2. Cc tham s chnh ca b nh. - Dung lng b nh (C): biu th kh nng tr tin ca b nh tnh bng bits, bytes, Kbytes, Mbytes, hoc theo s T, KT trn mt chip nh. Dung lng b nh lin quan n s li vo a ch. Dung lng b nh c tnh theo cng thc: C = 2 ly tha N, trong N- s bit ca li vo a ch V d: B nh c dng lng 64 x 4bit ngha l b nh cha 64 T 4 bit. B nh 2K x 8bit ngha l b nh cha 2Kbyte. - Thi gian truy cp (ta): c trng cho tc hot ng ca b nh tnh theo n v ns. Thng thng ta c tr s t vi chc n 1000ns ty loi b nh. - Cng sut tiu th (Po): c trng mc tiu th cng sut ca b nh tnh theo w/bit. Tham s ny ch c i vi b nh bn dn.
160
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Vi mch tch hp
Gi thnh: tnh theo n v tin/bit. in th ngun nui (ECC hoc VDD): h TTL c ECC = +5V; h CMOS c VDD = 3V n 15V.
7.6.3. Vi mch nh. a. nh ngha Vi mch nh l cc b nh bn dn, trong cc t bo nh c to ra t cc linh kin bn dn hoc mch c kh nng tch tr in tch. b. Phn loi vi mch nh. - Phn loi theo cng ngh ch to: vi mch nh chia lm 2 loi l b nh lng cc v b nh MOS/CMOS. + B nh lng cc: cc t bo nh c to thnh t cc tranzito lng cc. + B nh MOS/CMOS: cc t bo nh c to thnh t cc tranzito trng MOS. - Phn loi theo c th lu tr d liu: vi mch nh chia lm 2 loi chnh l b nh c nh- ROM v b nh tm thi- RAM. + ROM (Read Only Memory) l b nh ch c, ngha l ch c th ly d liu ra. y cc d liu c lu tr vnh vin mi t bo nh, nn khi mt ngun in cng khng mt d liu. Vic ghi d liu vo do nh sn xut thc hin. Ngoi ra, b nh c nh cn c PROM, EPROM v EAPROM. PROM ging nh ROM, d liu ch c ghi vo mt ln nhng do ngi s dng thc hin. EPROM l b nh c th xa i v vit li. Mun xa ta dng tia cc tm. EAPROM l b nh c nh c th xa v vit li. Vic xa c thc hin nh dng in. + RAM (Random Access Memory)- b nh tm thi, l b nh c/vit. Mi t bo nh l mt Flip-Flop nn khi mt ngun in cung cp th tin tc trong RAM b xa ngay. RAM c 2 loi l RAM tnh (SRAM) v RAM ng (DRAM). SRAM: T bo nh l Flip-Flop (tranzito lng cc hoc tranzito MOS). D liu c ghi vo SRAM s c duy tr trong n chng no cn ngun cung cp cho chip. DRAM: Dng in tch np vo linh kin MOS nh 1 bit tin trong t bo nh. V in tch np vo khng duy tr c lu nn nh k phi np li in tch gi l lm ti b nh (refresh). C hai loi SRAM v DRAM u thuc loi b nh xa ngay khi mt ngun in cung cp. d. Cu trc v hot ng ca RAM: - Cu trc ca RAM: cc t bo nh c b tr di dng ghp ma trn m x n (m hng v n ct) v c b gii m a ch xc nh v tr nh. Xem hnh 7-21. B gii m a ch c K bit, do vy s c 2 ly tha k a ch hay dung lng b nh l 2 ly tha k. Cc d liu vo v ra c a qua cc b m vo/ ra iu khin vic vit v c ca b nhthng qua chn iu khin R/W; chn CS l chn chn chip. - Nguyn l hot ng: Khi CPU a ti mt t hp a ch, b gii m a ch xc nh v tr ca T nh, sau ch tc ng ca cc li vo R/W v CS, b nh s thc hin chc nng c hoc vit. + c: t R/W = 1 v CS = 1: B m vo c kha li, b m ra c m. Nh vy d liu a ch chn s i qua b m ra ra BUS d liu. + Vit: t R/W = 0 v CS = 1: B m vo m, b m ra b kha. Cc d liu vo t BUS d liu s i qua b m vo n v tr nh c xc nh.
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Cc b m thng l cc cng logic 3 trng thi. Khi khng c tc ng c hoc vit, nh logic li vo CS cc b m u trng thi tr khng cao (Zcao). Cc li vo CS cn gip ta ghp nhiu chp nh vi nhau tng dung lng nh.
B gii m a ch
mxn
CS
B m ra D liu ra
Hnh 7 21: Cu trc ca RAM d. Cu trc ca ROM bn dn ROM l b nh cha sn d liu, khi cn ta ch c m khng vit ngay vo c. Trong ROM bn dn mi t bo nh c th s dng it hoc tranzito tr d liu. Thi gian truy cp ca b nh lng cc khong 50ns 90ns, cn i vi MOSFET th chm hn 10 ln. V d: Ta c cu trc ca ROM dng it: trn giao im ca ng T (hng) v ng Bit (ct) nu c it th tng ng l bit 1, nu khng c it th tng ng l bit 0. Xem hnh7-22.
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8 ng T
B 3 bit a ch gii m a ch
0 1 2 3 4 5 6 7
A B C ng bit d liu (4 bit) D
PROM: l b nh ROM ch vit mt ln do ngi s dng thc hin. Trong PROM tt c cc giao im gia ng T v ng Bit ngi ta u ni tip mt it vi mt cu ch. Khi vit d liu vo b nh ngi ta ch cn phng vo b nh mt dng in ln lm t cu ch ti giao im chn v nh vy giao im ny c vit bit 0. Cn cc giao im no khng b t cu ch s l bit 1. Su khi vit xong khng thay i c na.
Cc vi mch c s dng rt rng ri trong k thut tng t (vi mch tuyn tnh) v k thut s (vi mch s). Khi s dng vi mch tch hp cn lu mt s im chnh sau: - Phi c c k hiu ca vi mch: Trn thn vi mch thng ghi tn hng sn xut, k hiu chc nng ca vi mch, k hiu sn phm c l thng phm, ngy thng nm sn xut. - Bit tra cu vi mch trong s tra cu bit chc nng IC v chc nng cc chn ca IC. - Ch chn ngun cung cp cho IC lm vic. - Khi u vo mch phi u chn ngun cung cp trc, sau mi cho tn hiu vo mch. - Ngun cung cp phi c n nh cao. - Hn ni IC vo mch phi ch dng m hn nhn, c cng sut thp khong 30w n 60w, trnh lm nng IC. c bit i vi cc IC s cn ch mt s im sau: Cc vi mch s thng gp l cc h vi mch TTL, CMOS, MOS, v.v.. y l cc IC thc hin mt chc nng hon chnh nh cng, h m, gii m, ghi dch, h nh, h vi x l. - Khi chn mt vi mch cn quan tm ti cc tham s sau: cng sut tiu th, kh nng chu ti, thi gian chuyn mch, kh nng chng nhiu, in p ngun nui, mc logic... 163
CU KIN IN T
Vi mch tch hp
Xung nhp: tc chuyn mch ca vi mch s cn ln. mch in lm vic n nh th xung nhp cn c dc sn 400 ns, nu khng t tiu chun ny cn to li dng xung nhp. - Bt k ch lm vic no, in p ti li vo ca vi mch khng c cao hn in p ca chn ngun (VCC hoc VDD) v khng thp hn t