Professional Documents
Culture Documents
The Is Designed For General Purpose Amplifier and Switching Applications
The Is Designed For General Purpose Amplifier and Switching Applications
The Is Designed For General Purpose Amplifier and Switching Applications
A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004 1/1
CHARACTERISTICS T = 25
C
TRANS1.SYM
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
= 10 mA -60 V
BV
CBO I
= 10 A -60 V
I
CBO
V
= -50 V T
= 25
C
T
= 150
C
0.01
10
A
I
CEX
V
= -30 V V
= 0.5 V 50 nA
I
B
V
= -30 V V
= 0.5 V 50 nA
BV
EBO I
= 10 A -5.0 V
h
FE
V
= -10 V I
= 100 A
I
= 1.0 mA
I
= 10 mA
I
= 150 mA
I
= 500 mA
75
100
100
100
50
300
---
V
CE(SAT)
I
= 150 mA I
= 15 mA
I
= 500 mA I
= 50 mA
-0.4
-1.6
V
V
BE(SAT)
I
= 150 mA I
= 15 mA
I
= 500 mA I
= 50 mA
-1.3
-2.6
V
SILICON PNP TRANSISTOR
DESCRIPTION:
The 2N2907A is Designed for
General Purpose Amplifier and
Switching Applications.
MAXIMUM RATING:
I
600 mA
V
-60 V
P
1.8 W @ T
= 25
C
T
-65
C to +200
C
T
-65
C to +200
97
C/W
PACKAGE STYLE TO-18
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004 2/2
2N2907A
DYNAMIC CHARACTERISTICS T = 25
C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
f
t
V
= -20 V I
= -30 V I
= 150 mA I
= 15 mA 45 nS
t
d
V
= -30 V I
= 150 mA I
= 15 mA 10 nS
T
r
V
= -30 V I
= 150 mA I
= 15 mA 40 nS
t
off
V
= -6.0 V I
= 150 mA I
=I
= 15 mA 100 nS
t
s
V
= -6.0 V I
= 150 mA I
=I
= 15 mA 80 nS
t
f
V
= -6.0 V I
= 150 mA I
=I
= 15 mA 30 nS