1.

explain the principle and operation of device structure of enhancement n and p tansistor
2.derive the relationship bt id vd char of nmos transistor according to a.channel lnght modulation
b.their respective region
3.explain finite output resistance in saturation with necessary derivation according to the large sgnl
equivalnt model
4.shrt notes on common gate,drain,srce,amp wrt small sgnl analysis and derive neccessary eqs
5.cmpre bjt fet according to nmos and npn transistor
6.xplain inverting and non inverting configuration amp according to a. effect of open loop gain b.input
and output resistance
7.with necessary derivation xplain the working principle of instrumentation amp
8.xplain working principle of non linear func operation with neccesary derivation a.log amp b.antilog
amp c.sample and hold ckt
9.problems 4.1,4.3,4.5,4.9(egs)