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Unit IV
Unit IV
Unit IV
Design principles
Generic FET Oscillator
Feedback Approach
Negative Resistance Method
Active Device Technology for CAD
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(i) GaAs MESFET:
- ion implantation
- good noise figure
- low power and good performance
(ii)HEMT(high electron mobility transistor)
- operating frequency 100ghz
- not suitable for high volume manufacturing
(iii)HBT(Hetero junction bipolar transistor)
- high gain device
- suffer by parasitic capacitance
Remaining devices having good noise figure and low power and
performances.
Phase noise
VCO CIRCUIT DIAGRAM
Varactor Diode VCO
VCO Characteristics
MMIC VCO Chip
Mixers
MMIC- Injected locked oscillator
design
PLL, Frequency Synthesizers, Frequency
modulation subsystems, adaptive phase
arrays.
Locking Bandwidth:
Oscillator able to lock the injection signal
over one B.W
MIXERS
Analysis
Mixer Analysis
General Analysis
Restricted Analysis
Mixer Circuit Analysis:
Analysis of a simple
Single loop Circuit
General Non-Linear
Analysis
Diode Mixers
Single-ended diode mixer
Single balanced mixer
Single balanced mixer using baluns
Double balanced diode mixer