SPICE ()

SPICE (Simulation Program with Integrated Circuit Emphasis) ..-.:.

.: . ...: (netlist) : .cir
1 asas+ea
::+ title line : .END .::..: element line :
control line (.~._:. spice .) .
THIS IS TITLE LINE Title line ..
EXAMPLE OF .CIR FILE ( +.. comment line)
R1 11 12 34K element line
(element line . control line)
.OPTION NOPAGE NODE control line
.MODEL MYMOS W=10U L=10U
+LD=1.234U
..
.END ..
element line . control line .. .-. + +.. spice
:..
2 ou:e element line
~..-
F = 1E-15 P = 1E-12 U = 1E-6 M = 1E-3
MIL = 25.4E-6 K = 1E3 MEG = 1E6 G = 1E9 T = 1E12
element line :+~.
C : Capacitor D : Diode E : VCVS
F : CCCS G : VCCS H : CCVS
I : Independent Current Source J : JFET K : mutual inductance
L : Inductor M : MOSFET Q : BJT
R : Resistor T : Transmission line V : Independent Voltage Source
X : Subcircuit
...
2.1 Resistors
N1 N2
RXXXXXX N1 N2 val < TC = TC
1
<, TC
2
>>
XXXXXX : ~. ( 6 ) . R
N1, N2 : ++ node .
1
val : -+ R T
nom
TC (Temperature coefcient) +
val(T) = val

1 +TC
1
(T T
nom
) +TC
2

T T
nom

:.- T
nom
.option
2.2 Capacitors
n+ n-
CXXXXXX N+ N- val < IC=INCOND >
CXXXXXX N+ N+ POLY C
0
C
1
C
2
< IC=INCOND >
XXXXXX : .+ R
N+, N- : node +:+ C
val : -+ C
IC : :- INCOND . initial condition .-.: transient
POLY : : - C = C
0
+C
1
V +C
2
V
2
V - Voltage -. C
2.3 Inductors
n+ n-
LXXXXXX N+ N- VALUE < IC=INCOND >
LXXXXXX N+ N- POLY L
0
L
1
L
2
< IC=INCOND >
IC : :.- INCOND .:: L N+ N- initial condition
POLY : L = L
0
+L
1
I +L
2
I
2
I -.:: L
2.4 Mutual Inductance
NP+
i1 i2
+
-
+
-
v2 L1 v1 L2
NP-
NS+
NS-
M
KXXXXXX LYYYYYY LZZZZZZ VALUE
LYYYYYY : LZZZZZZ - inductors -- . KXXXXXX -
VALUE .: 0 : 1 VALUE - Coefcient of Coupling
2
2.5 Independent Sources
+
-
N+
N-
N+
N-
Voltage : Current
?XXXXXX N+ N- < < < DC > DC/TRAN-VALUE >
+ < < AC < ACMAG < ACPHASE > > > < Type(TPAR1 TPAR2 . . . ) > >
? :. Voltage source .~. V -. ? : Current source .~. I ?
N+ N- + node :. V N+ node + N- + .::
voltage source N+ N- :- . I .:: N+ N-
:-
DC : :: dc source : DC/TRAN-VALUE ++ source :.
.-.: DC/Transient
AC : ::. ac source ACMAG :: ACPHASE
-: 1 0 -
Type : option .::-.-.: transient spice Type 5 .:

(a) PULSE(V
1
V
2
T
D
T
R
T
F
P
W
T)
V
D
T
V
T
R
T
F
P
W
T
2
1
3
parameter default value unit
V
1
initial value none volt or amp
V
2
pulsed value none volt or amp
T
D
time delay 0.0 seconds
T
R
rise time TSTEP seconds
T
F
fall time TSTEP seconds
P
W
pulse width TSTOP seconds
T period TSTOP seconds
- TSTEP, TSTOP .TRAN control line
(b) SIN(V
o
V
a
f T
d
)
V
o
T
D
a
V
parameter default value unit
V
o
offset value none volt or amp
V
a
amplitude none volt or amp
f frequency 1/TSTOP Hertz
T
d
time delay 0.0 seconds
damping factor 0.0 1/seconds
output :- . 0 t TSTOP, u(t) - unit step
Output(t) = V
o
+V
a
exp

(t T
D
)

sin (2f(t TD)) u(t T

D
)
(c) EXP(V
1
V
2
T
D1

1
T
D2

2
)
4
T
V
1
V
2
D1
T
D2
parameter default value unit
V
1
initial value none volt or amp
V
2
pulsed value none volt or amp
T
D1
rise delay time 0.0 seconds

1
rise time constant TSTEP seconds
T
D2
fall delay time T
D1
+ TSTEP seconds

2
fall time constant TSTEP seconds
output :- . 0 t TSTOP
Output(t) = V
1
+(V
2
V
1
)

1e
(tT
D1
)/
1

u(tT
D1
)+(V
1
V
2
)

1e
(tT
D2
)/
2

u(tT
D2
)
(d) PWL( T
1
V
1
< T
2
V
2
< . . . >>) (PWL : Piece-Wise Linear)
V3 V4
V2
v,i
t(s)
V0
T0 T1 T2 T3 T4 T5 T6 T7
V1 V5 V6
V7
5
T
n
: n V
n
: ++ Source T
n
.
Output(t) = V
n
+

V
n+1
V
n

t T
n
T
n+1
T
n
; T
n
t T
n+1
(e) SFFM(V
o
V
a
f
c
M f
s
) (SFFM : Single Frequency FM)
parameter default value unit
V
o
offset none volt or amp
V
a
amplitude none volt or amp
f
C
carrier frequency 1/TSTOP Hertz
M modulation index none
f
S
signal frequency 1/TSTOP Hertz
Output(t) = V
o
+V
a
sin

2f
c
t +M sin(2f
s
t)

; 0 t TSTOP
2.6 Dependent Source
linear : non-linear
2.6.1 Linear Dependent Source
VCCS GXXXXXX N+ N- NC+ NC- VALUE
NC+
NC-
+
-
V1
V0 = EV1
N+
N-
N+ N- : node .::
NC+ NC- : node .--.::
VALUE : transconductance siemens
VCVS EXXXXXX N+ N- NC+ NC- VALUE
NC+
NC-
+
-
V1
N+
N-
I1
I0 = G*V1
6
N+ N- node ..--. node NC+ NC-
.+. - VALUE
CCCS FXXXXXX N+ N- VNAME VALUE
NC+
NC-
+
-
V1
N+
N-
I1
I0 = F*I1
= F*I(Vsense)
Vsense
VNAME ..:::--.:: VALUE -
.+.::
CCVS HXXXXXX N+ N- VNAME VALUE
NC+
NC-
+
-
V1
N+
N-
I1
+
-
= H*I(Vsense)
V0 = H*I1
Vsense
. CCCS - VNAME ..:::--
. node N+ N- - tranresistance VALUE
2.6.2 Non-Linear Dependent Source
:. non-linear source -+ :.
:. -.
f(x) = a
0
+a
1
x +a
2
x
2
+a
3
x
3
+. . .
:.:
f(x, y) = a
0
+a
1
x +a
2
y

+a
3
x
2
+a
4
xy +a
5
y
2

+a
6
x
3
+a
7
x
2
y +a
8
xy
2
+a
9
y
3

+. . .
:.: :+ -.+:.
f(x, y, z) = a
0
+a
1
x +a
2
y +a
3
z +
a
4
x
2
+a
5
xy +a
6
xz +a
7
y
2
+a
8
yz +a
9
z
2
+
a
10
x
3
+a
11
x
2
y +a
12
x
2
z +a
13
xy
2
+a
14
xyz +a
15
xz
2
+a
16
y
3
+a
17
y
2
z +a
18
yz
2
+a
19
z
3
+
a
20
x
4
+. . .
7
:. Non linear Dependent Source .
?XXXXXX N+ N- < POLY(ND) > NC1+ NC1- < NC2+ NC2- > P0 P1 < IC = >
? : G,E,F,H dependent source
N+ N- node source
POLY(ND) :.-:r : ND = 1
P0 P1 P2 :.::r+:.
NCk+ NCk- node . k :-- source
IC -. source ..-.: transient
3 Semiconductor Devices
. element line .:.: control line .MODEL
: :. :: .:.
3.1 Diode
n- n+
I
DXXXXXX N+ N- MODNAME < AREA > < OFF> <IC=VD>
N+ : N- node :-r+
MODNAME .++.: .MODEL control line
AREA +.::.+ . Saturation current
OFF initial condition + +:.-.: DC
IC :.- VD initial condition +-:
.-.: transient
.MODEL MODNAME D<(PAR1=PVAL1 PAR2=PVAL2)>
MODNAME ..: diode element line
D .
PARn - parameter + PVALn -+ parameter
8
3.2 BJT
E
C
B
E
C
B
PNP NPN
QXXXXXX NC NB NE < NS > MODNAME <AREA> <OFF> <IC=VBE,VCE>
NC NB NE node collector, base : emitter + BJT
NS node substrate :: node 0
IC=VBE,VCE :.- initial condition .-.: transient -
:
:. .MODEL control line +:
.MODEL MODNAME NPN <(PAR1=PVAL1 PAR2=PVAL2)> :. npn
.MODEL MODNAME PNP <(PAR1=PVAL1 PAR2=PVAL2)> :. pnp
3.3 JFET
S
D
NJF PJF
G
G
S
D
JXXXXXX ND NG NS MODNAME <AREA> <OFF> <IC=VDS,VGS>
ND NG NS node drain gate : source + JFET + JFET :.
.MODEL MODNAME NJF <(PAR1=PVAL1 PAR2=PVAL2)>:. N-channel
.MODEL MODNAME PJF <(PAR1=PVAL1 PAR2=PVAL2)> :. P-channel
3.4 MOSFET
S
D
G
substrate
D
S
G
substrate
PMOS NMOS
9
MXXXXXX ND NG NS NB MODNAME <L=VAL> <W=VAL> <AD=VAL> <AS=VAL>
+ <PD=VAL> <PS=VAL> <NRD=VAL> <NRS=VAL> <OFF> <IC=VDS,VGS,VBS>
ND NG NS NB - node drain, gate, source : bluk(substrate)
MODNAME -.+ MOSFET :.: .model line
L --+ channel .
W --+ channel .
AD + drain diffusion ..
AS + source diffusion ..
PD perimeter + drain junction .
PS perimeter + source junction .
NRD equivalent number of squares of drain diffusion
NRS equivalent number of squares of source diffusion
OFF ..: initial condition +.. -.: DC
IC .-. drain-source voltage, gate-source voltage : substrate-
source voltage ..-.: transient
:. .model line + MOSFET :
.MODEL MODNAME NMOS<(PAR1=PVAL1 PAR2=PVAL2)> :. N-channel
.MODEL MODNAME PMOS<(PAR1=PVAL1 PAR2=PVAL2)> :. P-channel
PARn - parameter 42 .
3.5 Transmission line
:-
TXXXXXX NA+ NA- NB+ NB- Z0=ZVAL F=FREQ <NL=NLENGTH> <IC=VA,IA,VB,IB>
TXXXXXX NA+ NA- NB+ NB- Z0=ZVAL TD=TVALUE <IC=VA,IA,VB,IB>
NA+ NA- NB+ NB- node +: A : B
Z0 - characteristic impedance
IC ..:. initial condition .- transient VA IA --
:.:: A VB IB -:.:: B
F --+- NL -+ transmission line .:+
-- -
TD - transmission delay time + transmission line TD = NL/F
4 ou:e control line
control line ::_ -. analysis . +
output . option
10
4.1 Dc Analysis
.DC SRC START STOP INCR <SCR2 START2 STOP2 INCR2>
SRC .+ independent voltage/current source :.-
START STOP step : INCR :.
4.2 AC Analysis: control line
.AC LIN NP FSTART FSTOP
.AC DEC ND FSTART FSTOP
.AC OCT NO FSTART FSTOP
FSTART FSTOP -.:-: +.-.:
LIN NP :.-.: NP -. FSTART FSTOP step .:

DEC ND :.- decade : decade : ND -

OCT NO :.- octave : octave : NO -
4.3 Transient Analysis
.TRAN TSTEP TSTOP <TSTART <TMAX> > <UIC>
TSTEP --+:+.- :-.
TSTOP -:.- transient
TSTART -..-(:- )
TMAX --:.- :-. : (TSTOP-
TSTART)/50 :
UIC -.. initial condition .- - initial condition
.IC control line .IC control line :- element
line .
4.4 Operation point Analysis
.OP
.- : .:.:.
4.5 Transfer Function Analysis
.TF OUTPUTVAR INPUTSRC
OUTPUTVAR -.r.: INPUTSRC -. input +. .
-.::.: small signal analysis
11
4.6 Sensitivity Analysis
.SENS OV1 <OV2>
OV1 - output .: spice :.-.: DC-small signal sensitivity + OV1 parameter
.
4.7 Distortion Analysis
.DISTO RLOAD INTER <SKW2 <REFPWR <SPW2> > >
.. .AC RLOAD -.+ element :- distortion power
INTER -.:.:+.- :- -.
:
SKW2 +: --+ AC Analysis - ::-
distortion - 0.9
REFPWR .:+ power ..- - default - 1mW
SPW2 Amplitude +-: ( SKW2*-.) defaults=1.0
4.8 Noise Analysis
.NOISE OUTPUTV INPUTSRC NUMSUM
.. .AC OUTPUTV - output
INPUTSRC -.+ independent source noise input reference NUMSUM -..:
.-
4.9 Fourier Analysis
.FOUR FREQ OV1 <OV2 OV3>
.- .TRAN FREQ - fundamental frequency (- 1/-+:__)
OVn - output .-.: :: amplitude +-.: 10 -
(- DC : 9 a.-)
4.10 Analysis at Different Temperatures
.TEMP T1 <T2 <T3> >
Tn -.-.: -: :. 27 -:
5 Formatting Output: control line oueeo
5.1 .PRINT control line
.PRINT ANALTYPE OV1 <OV2 OV3>
OVx - output . format + OV :+ ANALTYPE .:
12
5.1.1 DC and Transient Analysis
output :. node ground . node ..::
voltage source .
.PRINT DC V(1) I(VSENS) V(2,3)
V(1) - node 1, V(2,3) - node 2 node 3 I(VSENS) -.::
VSENS .:: ..- .: voltage source + 0
5.2 AC Analysis
.-.: :.: output :.:: :
V . VM I(VXXXXXX) . IM(VXXXXXX) ++..::
VR IR(VXXXXXX) :.+..::
VI II(VXXXXXX) :+..::
VP IP(VXXXXXX) :+..::
VDB IDB(VXXXXXX) ++..::
5.3 Noise and Distortion Analysis
output +.-.::+
- ONOISE output noise
- INOISE equivalent input noise
- HD2 2*f1 (-.:a.-:)
- HD3 3*f1 (-.:a.-:)
- SIM2 f1+f2 component
- DIM2 f1-f2 component
- DIM3 2*f1-f2 component
: output :. :::
R : real part I : imaginary part M : magnitude
P : phase DB : decibel
::+ (magnitude) .
.PRINT NOISE INOISE ONOISE(DB) .
.PRINT DISTO HD2 HD3(DB) SIM2 DIM2
5.4 .PLOT ANALTYPE OV1 <(PLO1, PHI1)>OV8 <(PLO8, PHI8)> >
:. .PLOT control line ANALTYPE : OVn : .PRINT ::
(PLOn, PHIn) :.+++ OVn . PLOn PHIn .
.PLOT AC VDB(2,3) (0,20) IP(VSENS)
(PLOn, PHIn) spice :
13
5.5 .WIDTH control line
.WIDTH IN=COLNUMIN OUT=COLNUMOUT
COLNUMIN --: spice :.: COLNUMOUT --
+ output le :-- 80 133
5.6 .OPTIONS control line
.OPTIONS OPT1 OPT2 (or OPT=OPTVAL)
.:. option :: option 32
option effect
ACCT ..: accounting : run time
LIST . list + input data
NOMOD . parameter + model
NOPAGE header +: (:.:.:~)
NODE node table
OPTS - option
GMIN=x - conductance : (default = 1.0e-12)
RELTOL=x - relative error tolerance (default = 0.1%)
ABSTOL=x - absolute error tolerance +.:: (default = 1e-12 A)
VNTOL=x - absolute error tolerance + (default = 1e-6 V)
TRTOL=x - transient error tolerance (default = 7.0)
CHGTOL=x - charge tolerance (default = 1e-14)
PIVTOL=x - :+:.+. . pivot point (default = 1e-13)
PIVREL=x - relative ratio .:-+:._: column - pivot (default = 1e-3)
NUMDGT=x ++:-_ 0 < x < 8 ; default = 4
TNOM=x - nominal temperature (default = 27 degree C)
ITL1=x - dc iteration limit (default = 100)
ITL2=x - dc transfer curve iteration limit (default = 50)
ITL3=x - lower transient analysis iteration limit (default = 4)
ITL4=x - transient analysis time point iteration limit (default = 10)
ITL5=x - transient analysis total iteration limit (default = 5000)
CPTIME=x cpu time ::+
LIMTIM=x - cpu time . plot graph (default = 2 sec)
LIMPTS=x print . plot (default = 201)
LVLCOD=x . CDC Computer x=2 :: machine code + matrix solution
LVLTIM=x x=1 :. iteration time step control x=2 :. truncation time step control (default = 2)
METHOD=name r.. name : Gear . trapizoidal (default)
MAXORD=x - maximum order +.. ( METHOD=Gear) 2 x 6 (default = 2)
DEFL=x -- channel + MOS (default = 100 micrometers)
DEFW=x -- channel + MOS (default = 100 micrometers)
DEFAD=x - MOS drain diffusion area (default = 0)
DEFAS=x - MOS source diffusion area (default = 0)
14
5.7 .NODESET control line
.NODESET V(NODENUM1)=VAL1 V(NODENUM2)=VAL2
NODENUM + node . node 0 VAL -- node spice :.-
-..-.: bias .- DC . transient
5.8 .IC control line
.IC V(NODENUM1)=VAL1 V(NODENUM2)=VAL2
NODENUM + node VAL -- node -:. transient initial condition
6 o+ss subcircuit
.-. ::+.~:: .+ input +
.::.++. subcircuit
6.1 Subcircuit control line
.SUBCKT SUBNAME N1 <N2 N3>
.::~:..+.
.ENDS <SUBNAME>
SUBNAME -.... subcircuit N1 N2 N3 - node + subcircuit :
node +.
6.2 Subcircuit element line
XYYYYYY N1 <N2 N3> SUBNAME
YYYYYY -...:.::
N1 N2 N3 - node subcircuit
SUBNAME -.+ subcircuit + Subcircuit control line
7 e Semiconductor Device
:.+ Diode, JFET, BJT : MOS . spice : :+-~

8 a+vsuTransformer : Switch
..::.. spice ..:. +
.
15
8.1 Ideal Transformer
Ideal Transformer
N -++ /+ = 1/turn ratio
EPRI-SEC - VCVS - N*primary voltage
FSEC-PRI - CCCS - secondary current/N
V-ISEC ..:..::+
8.2 Ideal Transformer, with Inductors
Ideal transformer with inductors
N - 1/turn ratio
LPRI, LSEC ---++ : ::-:r
:. LSEC = LPRI N
2
K - coefcient of coupling - 1 :
16
8.3 Switch
switch
spice + switch . .- dependent source
switch .:+ GSWITCH - nonlinear VCCS --
VPULSE independent source .: PULSE : input le : VPULSE :-
1 .: 1 : GSWITCH VCCS order 2 1E6 : transconductance
-_ resistance
17
name parameter units default area
IS saturation current A 1.0E-14
RS ohmic resistance 0
N emission coef cient - 1
TT transit time sec 0
CJO zero-bias junction capacitor F 0
VJ junction potential V 1
M grading coef cient - 0.5
EG activation energy ev 1.11
XTI saturation-current temperatur exponent - 3.0
KF icker noise coef cient - 0
AF icker noise exponent - 1
FC coef cient for forward-bias depletion capacitance formula - 0.5
BV reverse breakdown voltage V +
IBV current at BV A 1E-3
Table 1: Diode Parameter ( indicates that this value is effected by AREA)
name parameter unit default area
VTO threshold voltage V -2.0
BETA transconductance parameter A/V
2
1.0E-4
LAMBDA channel length modutation parameter 1/V 0
RD drain ohmic resistance 0
RS source ohmic resistance 0
CGS zero-bias G-S junction capacitance F 0
CGD zero-bias G-D junction capacitance F 0
PB gate junction potential V 1
IS gate junction saturation current A 1.0E-14
KF icker noise coef cient - 0
AF icker noise coef cient - 1
FC coef cient for forward-bias depletion capacitance formula - 0.5
Table 2: JFET Parameter ( indicates that this value is effected by AREA)
18
name parameter units default example area
IS transport saturation current A 1E-16 1E-15
BF ideal maximum forward beta 100 100
NF forward current emission coef cient 1 1
VAF forward Early voltage V 200
IKF corner for forward beta high current roll-off A 0.01
ISE BE leakage saturation current A 0 1E-13
NE BE leakage emission coef cient 1.5 2
BR ideal maximum reverse beta 1 0.1
NF reverse current emission coef cient 1 1
VAR reverse Early voltage V 200
IKF corner for reverse beta high current roll-off A 0.01
ISC BC leakage saturation current A 0 1E-13
NC BC leakage emission coef cient 2 1.5
RB zero bias base resistance 0 100
IRB current where base resistance falls halfway to its min value A 0.1
RBM minimum base resistance at high current RB 10
RE emitter resistance 0 1
RC collector resistance 0 10
CJE BE zero bias depletion capacitance F 0 2pF
VJE BE built-in potential V 0.75 0.6
MJE BE junction exponential factor 0.33 0.33
TF ideal forward transit time sec 0 0.1n
XTF coef cient for bias dependence of TF 0
VTF voltage describing VBC dependence of TF V
ITF high current parameter for effect on TF A 0
PTF excess phase at f = 1/(2TF) Hz deg 0
CJC BC zero bias depletion capacitance F 0
VJC BC built-in potential V 0.75 0.5
MJC BC junction exponential factor 0.33 0.5
XCJC fraction of BC depletion capacitance connected to internal base node 1
TR ideal reverse transit time sec 0 10n
CJS zero-bias collector-substrate capacitance F 0 2p
VJS substrate junction builtin potential V 0.75
MJS substrate junction exponential factor 0 0.5
XTB forward and reverse beta temperature exponent 0
EG energy gap for temperature effect of IS eV 1.11
XTI temperature exponent for effect on IS 3
KF icker noise coef cient - 0
AF icker noise coef cient - 1
FC coef cient for forward-bias depletion capacitance formula - 0.5
Table 3: Modied Gummel-Poon BJT Parameter ( indicates that this value is effected by AREA)
19
name parameter units default example
LEVEL model index 1
VTO zero-bias threshold voltage V 0 1
KP transconductance parameter A/V
2
2E-5 3.1E-5
GAMMA bulk threshold parameter

V 0 0.37
PHI surface potential V 0.6 0.65
LAMBDA channel length modulation (2,3) 1/V 0 0.2
RD drain ohmic resistance 0 1
RS source ohmic resistance 0 1
CBD zero-bias BD junction capacitance F 0 4E-11
CBS zero-bias BS junction capacitance F 0 4E-11
IS bulk junction saturation current A 1E-14 1E-15
PB bulk junction potential V 0.8 0.87
CGSO G-S overlap capacitance per meter channel width F/m 0 4E-11
CGDO G-D overlap capacitance per meter channel width F/m 0 4E-11
CGBO G-B overlap capacitance per meter channel width F/m 0 2E-10
RSH D-S diffusion sheet resistance /sq 0 10
CJ zero bias bulk junction bottom cap. per m
2
of junction area F/m
2
0 2E-4
MJ bulk junction bottom grading coef. 0.5 0.5
CJSW zero bias bulk junction sidewall cap. per meter of junction perimeter F/m 0 1E-9
MJSW bulk junction sidewall grading coef. 0.3 0.3
JS bulk junction saturation current per m
2
of junction area A/m
2
1E-8
TOX oxide thickness m 1E-7 1E-7
NSUB substrate doping 1/cm3 0 4E15
NSS surface state density 1/cm3 0 1E10
TPG type of gate material: 1 (opp. to substrate), -1 (same as substrate), 0 (Al) 1
XJ metallurgical junction depth m 0 1
LD lateral diffusion m 0 0.8
UO surface mobility cm
2
/V-s 600 700
UCRIT critical eld for mobility degradation (2 Only) V/cm 1E4 1E4
UEXP critical eld exponent in mobility degradation (2 Only) 0 1
UTRA transverse eld coef (mobility) (deleted for 2) 0 0.3
VMAX maximum drift velocity of carries m/s 0 5E4
NEFF total channel charge ( xed and mobile) coeff. (2 Only) 1 5
XQC thin-oxide cap. model ag and coeff. of channel 1 0.4
charge share attributed to drain
KF icker noise coef cient 0 1E-26
AF icker noise exponent 1 1.2
FC coef cient for forward-bias depletion cap. formula 0.5
DELTA width effect on threshold voltage (2, 3 only) 0 1
THETA mobility modulation (3 only) 1/V 0 1
ETA static feedback (3 only) 0.0 1.0
KAPPA saturation eld factor (3 only) 0.2 0.5
Table 4: MOSFET Model Parameters
20