EEE 533 Semiconductor Device and Process Simulation

Introduction to Silvaco ATHENA Tool and

Basic Concepts in Process Modeling
Part - 3
Instructor: Dragica Vasileska
Department of Electrical Engineering
Arizona State University
EEE 533 Semiconductor Device and Process Simulation
8. Fabrication of a MOSFET device description
In the following set of slides, a set of statements and the accompanying
intermediate results are given in the process of fabrication of a MOSFET
device
electrical characterization is performed afterwards.
MESH SETUP:
go athena
#
line x loc=0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.5 spac=0.01
#
line y loc=0.00 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
# initialize orientation, background doping and save results
init orientation=100 c.phos=1e14 space.mul=2
structure outf=structure_1.str
EEE 533 Semiconductor Device and Process Simulation
OXIDE GROWTH AND ETCHING:
#pwell formation including masking off of the nwell
diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
structure outf=structure_2.str
#
etch oxide thick=0.02
structure outf=structure_3.str
EEE 533 Semiconductor Device and Process Simulation
P-WELL FORMATION AND OXIDE GROWTH AND ETCHING:
# P-well Implant
implant boron dose=8e12 energy=100 pears
diffus temp=950 time=100 weto2 hcl=3
structure outf=structure_4.str
#
# N-well implant not shown -
#
# welldrive starts here
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
diffus time=220 temp=1200 nitro press=1
diffus time=90 temp=1200 t.rate=-4.444 nitro press=1
structure outf=structure_5.str
#
etch oxide all
#
# sacrificial "cleaning" oxide
diffus time=20 temp=1000 dryo2 press=1 hcl=3
#
etch oxide all
#
EEE 533 Semiconductor Device and Process Simulation
EEE 533 Semiconductor Device and Process Simulation
GATE OXIDE GROWTH AND VT-ADJUST IMPLANT:
# gate oxide grown here:-
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
structure outf=structure_6.str
# extract gate oxide thickness
extract name="gateox" thickness oxide mat.occno=1 x.val=0.50
#
# vt adjust implant
implant boron dose=9.5e11 energy=10 pearson
structure outf=structure_7.str
EEE 533 Semiconductor Device and Process Simulation
POLYSILICON DEPOSITION AND ETCHING:
# Polysilicon deposition
depo poly thick=0.2 divi=10
structure outf=structure_8.str
#
# from now on the situation is 2-D
#
etch poly left p1.x=0.35
structure outf=structure_9.str
EEE 533 Semiconductor Device and Process Simulation
N
+
- REGIONS FORMATION AND FIELD OXIDE GROWTH:
method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
#
implant phosphor dose=3.0e13 energy=20 pearson
structure outf=structure_10.str
#
depo oxide thick=0.120 divisions=8
structure outf=structure_11.str
#
etch oxide dry thick=0.120
EEE 533 Semiconductor Device and Process Simulation
ARSENIC IMPLANTATION AND OXIDE ETCHING:
implant arsenic dose=5.0e15 energy=50 pearson
#
method fermi compress
diffuse time=1 temp=900 nitro press=1.0
structure outf=structure_12.str
#
etch oxide left p1.x=0.2
structure outf=structure_13.str
EEE 533 Semiconductor Device and Process Simulation
METAL DEPOSITION AND ETCHING:
deposit alumin thick=0.03 divi=2
structure outf=structure_14.str
#
etch alumin right p1.x=0.18
structure outf=structure_15.str
EEE 533 Semiconductor Device and Process Simulation
EXTRACTION OF DEVICE DESIGN PARAMETERS:
# extract final S/D Xj...
extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1
# extract the long chan Vt...
extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49
# extract a curve of conductance versus bias....
extract start material="Polysilicon" mat.occno=1 \
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name="sheet cond v bias" curve(bias,1dn.conduct \
material="Silicon" mat.occno=1 region.occno=1) outfile="extract.dat
# extract the N++ regions sheet resistance...
extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 \
x.val=0.05 region.occno=1
# extract the sheet rho under the spacer, of the LDD region...
extract name="ldd sheet rho" sheet.res material="Silicon" mat.occno=1 \
x.val=0.3 region.occno=1
# extract the surface conc under the channel....
extract name="chan surf conc" surf.conc impurity="Net Doping" \
material="Silicon" mat.occno=1 x.val=0.45
EEE 533 Semiconductor Device and Process Simulation
ELECTRODES SPECIFICATION AND MIRROR IMAGE STRUCTURE:
structure mirror right
electrode name=gate x=0.5 y=0.1
electrode name=source x=0.1
electrode name=drain x=0.9
electrode name=substrate backside
structure outfile=mos1ex02_0.str
# plot the structure
tonyplot -st mos1ex02_0.str -set mos1ex02_0.set
EEE 533 Semiconductor Device and Process Simulation
ELECTRICAL CHARACTERIZATION:
go atlas
# define the Gate workfunction
contact name=gate n.poly
# Define the Gate Qss
interface qf=3e10
# Use the cvt mobility model for MOS
models cvt srh print numcarr=2
# set gate biases with Vds=0.0
solve init
solve vgate=1.1 outf=solve_tmp1
solve vgate=2.2 outf=solve_tmp2
solve vgate=3.3 outf=solve_tmp3
# load in temporary files and ramp Vds
load infile=solve_tmp1
log outf=mos1ex02_1.log
solve name=drain vdrain=0 vfinal=3.3 vstep=0.3
load infile=solve_tmp2
log outf=mos1ex02_2.log
solve name=drain vdrain=0 vfinal=3.3 vstep=0.3
load infile=solve_tmp3
log outf=mos1ex02_3.log
solve name=drain vdrain=0 vfinal=3.3 vstep=0.3
# extract max current and saturation slope
extract name="nidsmax" max(i."drain")
extract name="sat_slope" slope(minslope(curve(v."drain",i."drain")))
tonyplot -overlay -st mos1ex02_1.log mos1ex02_2.log mos1ex02_3.log -set
mos1ex02_1.set
quit
EEE 533 Semiconductor Device and Process Simulation
OBTAINED SIMULATION RESULTS:
Content of the results.final file:
gateox=100.164 angstroms (0.0100164 um) X.val=0.5
nxj=0.174465 um from top of first Silicon layer X.val=0.1
n1dvt=0.59203 V X.val=0.49
n++ sheet rho=29.0223 ohm/square X.val=0.05
ldd sheet rho=2149.79 ohm/square X.val=0.3
chan surf conc=3.90871e+16 atoms/cm3 X.val=0.45
nidsmax=0.000563816
sat_slope=1.94223e-05
EEE 533 Semiconductor Device and Process Simulation
9. Additional Silvaco ATHENA examples
go athena
# TITLE: Comparison of Gauss, Pearson and SVDP method
line x loc = 0.0 spacing=0.25
line x loc = 0.25 spacing=0.25
line y loc = 0 spacing = 0.01
line y loc = 0.50 spacing = 0.01
#initialize the mesh
init silicon
# Gauss (symmetrical) implant (parameters are in std_tables)
moments std_tables
implant phos dose=1e14 energy=40 gauss
struct outf=aniiex01_0.str
line x loc = 0.0 spacing=0.25
line x loc = 0.25 spacing=0.25
line y loc = 0 spacing = 0.01
line y loc = 0.50 spacing = 0.01
# initialize the mesh
init silicon
# Use single Pearson (parameters are in std_tables)
moments std_tables
implant phos dose=1e14 energy=40 pearson print.mom
struct outf=aniiex01_1.str
EEE 533 Semiconductor Device and Process Simulation
line x loc = 0.0 spacing=0.25
line x loc = 0.25 spacing=0.25
line y loc = 0 spacing = 0.01
line y loc = 0.50 spacing = 0.01
# initialize the mesh
init silicon
# Use SVDP method (default)
moments svdp_tables
implant phos dose=1e14 energy=40 print.mom
struct outf=aniiex01_2.str
tonyplot -overlay aniiex01_*.str -set aniiex01.set
quit
EEE 533 Semiconductor Device and Process Simulation
go athena
# Retrograde Well Formation Using High Energy Phosphorus Implants
# the x dimension definition
line x loc = 0.0 spacing=0.25
line x loc = 0.25 spacing=0.25
# the vertical definition
line y loc = 0 spacing = 0.02
line y loc = 5 spacing = 0.05
# initialize the mesh
init silicon c.boron=1e15
deposit oxide thick=0.01
# perform high energy phosphorus implants
implant phos dose=5e13 energy=2000 print.mom
implant phos dose=5e12 energy=750 print.mom
# subsequent anneal
diffuse time=60 temp=1100
struct outf=aniiex06_0.str
tonyplot aniiex06_0.str -set aniiex06.set
quit
EEE 533 Semiconductor Device and Process Simulation
go athena
TITLE: Doping Dependent Oxidation Example
# Create the initial mesh
line x loc=-0.30 spac=0.03
line x loc=0.30 spac=0.03
line y loc=0.00 spac=0.02
line y loc=0.50 spac=0.1
init orientation=100 c.boron=1e15
# Mask part of the surface with nitride
deposit nitride th=.3 div=4
#
etch right nitride p1.x=0.0
#
# Implant with very high dose to dope part of the silicon
implant boron dose=3e15 energy=20
#
etch nitride all
#
# Oxidize and observe thicker oxidation on doped material
# Specify grid.ox to enhance the mesh in the growing oxide
method fermi compress grid.ox=0.03
diff time=5 temp=1000 weto2
extract name="toxlow" thickness material="SiO~2" mat.occno=1 x.val=-0.25
extract name="toxhigh" thickness material="SiO~2" mat.occno=1 x.val=0.25
# save it and plot it
structure outfile=anoxex03.str
tonyplot anoxex03.str -set anoxex03.set
quit
EEE 533 Semiconductor Device and Process Simulation
go athena
# TITLE: Oxide Profile Evolution Example
# Substrate mesh definition
line y loc=0 spac=0.05
line y loc=0.6 spac=0.2
line y loc=1
line x loc=-1 spac=0.2
line x loc=-0.2 spac=0.05
line x loc=0 spac=0.05
line x loc=1 spac=0.2
init orient=100
# Anisotropic silicon etch
etch silicon left p1.x=-0.218 p1.y=0.3 p2.x=0 p2.y=0
# Pad oxide and nitride mask
deposit oxide thick=0.02
deposit nitride thick=0.1
etch nitride left p1.x=0
etch oxide left p1.x=0
# Field oxidation with structure file output for movie
diffuse tim=90 tem=1000 weto2 dump=1 dump.prefix=anoxex01m
tonyplot -st anoxex01m*.str
structure outfile=anoxex01_0.str
quit
EEE 533 Semiconductor Device and Process Simulation
EEE 533 Semiconductor Device and Process Simulation