SB12H30 ...

SB12H40
SB12H30 ... SB12H40
High temperature schottky barrier diodes
Hochtemperatur-Schottky-Dioden
Version 2013-02-25
Dimensions - Mae [mm]
Nominal current
Nennstrom
12
!e"etiti#e "ea$ re#erse #olta%e
&erio'isc(e S"it)ens"errs"annun%
30...40 V
&lastic case
*unststo++%e(,use
- 5.4 . /.5 [mm]
0ei%(t a""ro..
1e2ic(t ca.
1.0 %
&lastic material (as 34 classi+ication 54V-0
1e(,usematerial 3454V-0 $lassi+i)iert
Stan'ar' "ac$a%in% ta"e' in ammo "ac$
Stan'ar' 4ie+er+orm %e%urtet in mmo-&ac$
Maimum ratings !ren"#erte
67"e
67"
!e"etiti#e "ea$ re#erse #olta%e
&erio'isc(e S"it)ens"errs"annun%
V!!M [V]
Sur%e "ea$ re#erse #olta%e
Stos"it)ens"errs"annun%
V!SM [V]
8or2ar' #olta%e
Durc(lass-S"annun%
V8 [V]
1
9
:8 ; 5 :8 ; 12
SB12H30 30 30 < 0.51 < 0.55
SB12H40 40 40 < 0.51 < 0.55
Ma.. a#era%e +or2ar' recti+ie' current= !-loa'
Dauer%ren)strom in >in2e%sc(altun% mit !-4ast
6 ; 50?@ :8V 12
2
9
!e"etiti#e "ea$ +or2ar' current
&erio'isc(er S"it)enstrom
+ A 15 H) :8!M 55
2
9
&ea$ +or2ar' sur%e current= 50 H) (al+ sine-2a#e
Stostrom +Br eine 50 H) Sinus-HalC2elle
6 ; 25?@ :8SM 250
!atin% +or +usin% D 1ren)lastinte%ral= t < 10 ms 6 ; 25?@ i
2
t 312
2
s
Eunction tem"erature D S"errsc(ic(ttem"eratur
in D@ +or2ar' mo'e D Cei 1leic(strom-Durc(lassCetrieC
6F
6F
-50...G1/5?@
H 200?@
Stora%e tem"erature D 4a%erun%stem"eratur 6S -50...G1/5?@
1 6F ; 25?@
2 Vali'= i+ lea's are $e"t at amCient tem"erature at a 'istance o+ 10 mm +rom case
1Blti%= 2enn 'ie nsc(luss'r,(te in 10 mm Cstan' #om 1e(,use au+ 3m%eCun%stem"eratur %e(alten 2er'en
I Diotec Semicon'uctor 1 (tt"JKK222.'iotec.comK 1
6
7
"
e
-
L0.05
1.2

-
L0.1
5.4

M
2
.
5


L
0
.
5
/
.
5

L
0
.
1
SB12H30 ... SB12H40
$haracteristics %enn#erte
4ea$a%e current
S"errstrom
6F ; 25?@
6F ; 125?@
V! ; V!!M
V! ; V!!M
:!
:!
< 100 N
< 15 m
6(ermal resistance Function to amCient air
0,rme2i'erstan' S"errsc(ic(t D um%eCen'e 4u+t
!t( < 14 *K0
1
9
6(ermal resistance Function to lea's
0,rme2i'erstan' S"errsc(ic(t D nsc(luss'ra(t
!t(4 < 4 *K0
1 Vali'= i+ lea's are $e"t at amCient tem"erature at a 'istance o+ 10 mm +rom case
1Blti%= 2enn 'ie nsc(luss'r,(te in 10 mm Cstan' #om 1e(,use au+ 3m%eCun%stem"eratur %e(alten 2er'en
2 (tt"JKK222.'iotec.comK I Diotec Semicon'uctor 1
120
100
O0
M0
40
20
0
[P]
:
8V
!ate' +or2ar' current #ersus amCient tem"erature 9
Qul. !ic(tstrom in C(. #on 'er 3m%eCun%stem". 9
1
1
[?@] 6

150 100 50 0
10

10
1
10
10
2
-1
-2
[]
:
8
8or2ar' c(aracteristics Rt7"ical #alues9
Durc(lass$ennlinien Rt7"isc(e 0erte9
6 ; 25?@
F
250a-R12a-0./5V9
V
8
0.4 0.5 0.M 0./ [V] 0.5 0.2