Nguyn Hu Phc - Khoa KT in t 2

2.1 Tm gi tr R1 v R2 im Q ca mch hnh P2.1(a) nm gia ng ti DC

(DCLL). Bit rng: Vcc=-25V, Rc=2k, RE=1k, c cc gi tr sau:
a. =150
b. =100
c. =50
2.2 Cho gi tr Ipp ca dng ic trong hnh P2.1(b) t maximum. Cho Vcc=24V,
Rc=2k, RE=400, v =100. V ng ti DC khi:
a. R1=1k, R2=7k.
b. R1=1k, R2=35k.
c. R1=1k, R2=3k.
-Vcc

Vcc

Rc

R2

Rc

R2
+

Vbe=0.7V

Vbe=-0.7V
R1

R1

Vo
Re

Vi

Re

Vi

Vo

Hinh P2.1a

Hinh P2.1b

2.3 Cho mch khuch i nh hnh P2.2, vi =100. Tm:

a. Gi tr R1 v R2 ICQ=10mA.
b. Tnh cc gi tr nh ca ng ra vi gi tr tm c cu a.
c. V ng ti DC (DCLL) v ng ti AC (ACLL).
d. V dng sng ic v vce.

Nguyn Hu Phc - Khoa KT in t 2

Vcc=20V

300

R2

+
C-->

Vbe=0.7V

Vo

200

C-->

R1

Vi

Hinh P2.2

2.4 Cho mch khuch i nh hnh P2.2, vi =100.

a. Tm gi tr R1 v R2 mch t max-swing
b. Tnh cc gi tr nh ca ng ra vi gi tr tm c cu a.
c. V ng ti DC (DCLL) v ng ti AC (ACLL).
d. V dng sng ic v vce.
2.5 Tm gi tr nh nh ca ic trong mch hnh P2.3 vi R1=5k, R2=50k,
Vcc=12V, VBE=0.7V, RE=300, =200 v Rc=RL=5k.
Vcc

Rc

R2

C-->

C-->

+
RL

R1

Vi

Re

Hinh P2.3

Nguyn Hu Phc - Khoa KT in t 2

2.6 Cho mch nh hnh P2.5, vi =100, tm gi tr R1 v R2 dng ic t maxswing. V cc ng ti.
-12V

Rc

9k

C-->

+
C-->

Vbe=-0.7V

Vo
1k

Vi

100

C-->

1k

Hinh P2.5

2.7 Cho mch khuch i nh bi 2.5, tnh ton cc gi tr sau:

a. Cng sut ca ngun
b. Cng sut tiu tn trn R1, R2, Re, Rc.
c. Cng sut tiu tn trn transistor.
2.8 Cho mch khuch i nh bi 2.6, tnh ton cc gi tr sau:
a. Cng sut ca ngun
b. Cng sut tiu tn trn R1, R2, Re, Rc.
c. Cng sut tiu tn trn transistor.
So snh vi bi 2.7
2.9 Cho mch khuch i nh hnh 2.3, trong : R1=3k, R2=20k,
Rc=RL=1k, Re=200, =200, Vcc=20V, tm v tr im Q. Thay th transistor
ny bng transistor khc c khc. Tm gi tr va thay vo (gi tr nh nht)
ICQ thay i khng qu 10% gi tr va tm.
2.10 Cho mch khuch i nh hnh P2.4, vi =100.
a. Tm gi tr R1, R2 ICQ=8mA.
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Nguyn Hu Phc - Khoa KT in t 2

b. Xc nh bin nh ca Vo, vi gi tr cu a.
c. V DCLL, ACLL.
d. Xc nh cng sut tiu tn trn transistor v trn RL.
Vcc=20V

2k
C-->

R2

+
C-->

Vbe=0.7V

Vo
2k

R1

Vi

200

Hinh P2.4

2.11 Cho mch khuch i nh hnh P2.4, vi =100.

a. Tm gi tr R1, R2 ICQ=4mA.
b. Xc nh bin nh ca Vo, vi gi tr cu a.
c. V DCLL, ACLL.
d. Xc nh cng sut tiu tn trn transistor v trn RL.
2.12 Cho mch khuch i nh hnh P2.4, vi =100.
a. Tm gi tr R1, R2 ng ra t max swing
b. Xc nh bin nh ca Vo, vi gi tr cu a.
c. V DCLL, ACLL.
d. Xc nh cng sut tiu tn trn transistor v trn RL.

Nguyn Hu Phc - Khoa KT in t 2

2.13 Xc nh Rc mch hnh P2.5, vi =100 c ng ra t max swing.
Transistor c dng l pnp. V DCLL v ACLL. Xc nh gi tr nh-nh ca
ng ra Vo.
2.14 Cho mch nh hnh P2.6, vi =200, xc nh ICQ, VCEQ ng ra t max
swing.
a. Xc nh R1, R2 mch hot ng ng im chn.
b. Tm bin ca p ng ra khi t max swing.
c. Xc nh cng sut tiu tn trn transistor v ti.
12V

4k
C-->

R2

+
C-->

Vbe=0.7V

+
4k

Vi

300

Vo

R1

C-->
300

Hinh P2.6

2.15 Cho mch nh hnh P2.7, vi =200,

a. Tm ICQ, VCEQ .
b. Xc nh khong thay i ca m mch khuch i vn n nh. Bit
150<<250.
c. V cc ng ti.
d. Xc nh bin in p ng ra.

Nguyn Hu Phc - Khoa KT in t 2

0
1k

16k

C-->

+
C-->

Vbe=-0.7V

Vo
2k

4k
200

C-->

Vi

+20V

Hinh P2.7

2.16 Mt ngun AC ni trc tip vo Base ca transistor npn nh hnh P2.8. in

tr ni ca ngun AC l Ri. Xc nh ICQ, VVEQ, v Vo khi tn hiu AC ng vo l
zero. (Bit: =100, VBE=0.7V).
+5V

1k

Vo
Ri
2k

Vi

2k

0
+
-5V

Hinh P2.8

2.17 Vi bi 2.16, gi tr ca in tr thm vo in tr ngun Ri bng bao nhiu

ng ra c Vo=3V khi ng vo Vi=0V.
2.18 Phn tch mch hnh P2.9, xc nh:
(VBE=0.7V, =100)
a. ICQ , VCEQ.
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Nguyn Hu Phc - Khoa KT in t 2

b. Bin in p ng ra.
c. Cng sut ngun.
d. Cng sut ng ra.
e. Cc ng ti trong mch khuch i.
+5V

5k
C-->

C-->

12k

5k

Vi

Vo
-

500

2k

-5V

Hinh P2.9

2.19 Thit k mch khuch i CE dng mch hnh P2.10 sao cho in p ng ra
t max swing. Thit k n nh phn cc DC. Dng VBE=-0.6V v =200.
Xc nh:
a.
b.
c.
d.
e.

ICQ, VCEQ
R1 v R2
Gi tr in p ng ra t max swing.
Cng sut transistor
Cng sut ng ra ca mch khuch i.

2.20 Thit k mch khuch i CE, phn cc DC cho transistor dng mch hnh
P2.11. Bit ng ra Vop=1V (Dng VBE=0.7V, =200). Mch khuch i tiu tn
cng sut nh nht. Xc nh:
a. ICQ v VCEQ.
b. R1 v R2.

Nguyn Hu Phc - Khoa KT in t 2

-6V

2k

R2

C-->

+
C-->

Vo

1k

Vi
100

R1

0
0

C-->
100

+6V

Hinh P2.10
+6V

2k

R2

C-->

+
C-->

Vo

5k

Vi
R1

0
0

C-->
200

-6V

Hinh P2.11

2.21 Cho mch nh hnh P2.12 vi =100.

a. Tm R1 v R2 ICQ=6mA.
b. V DCLL, ACLL.
c. Xc nh in p ng ra.
d. Tm cng sut tiu tn trn transistor, cng sut tiu th ca ti.
2.22 Cho mch nh hnh P2.12 vi =100.
a. Tm R1 v R2 ICQ=10mA.
b. V DCLL, ACLL.
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Nguyn Hu Phc - Khoa KT in t 2

c. Xc nh in p ng ra.
d. Tm cng sut tiu tn trn transistor, cng sut tiu th ca ti
Vcc=24V

Vbe=0.7V

C-->

C-->

R2

R1

Vi

2k

Vo
2k
-

Hinh P2.12

2.23 Cho mch nh hnh P2.12, =100.

a. Tm R1, R2 ng ra t max swing.
b. V DCLL, ACLL.
c. Xc nh in p max swing ng ra.
d. Tm cng sut tiu tn trn transistor, cng sut tiu th ca ti.
2.24 Cho mch khuch i emitter-follower nh hnh P2.13, =300:
a. Xc nh VCEQ, ICQ
b. Tm in p ng ra.
c. Tm cng sut tiu tn trn ti v cng sut cung cp cho transistor.
+20V

25k

C-->

+
C-->

Vbe=0.6V

Vo
2k
1k

C-->

8k

Vi

Hinh P2.13

Nguyn Hu Phc - Khoa KT in t 2

2.25 Cho mch khuch i emitter-follower nh hnh P2.14, =80:
a. Xc nh ICQ, VCEQ.
b. V DCLL, ACLL.
c. Xc nh in p ng ra.
d. Nu R=1k b bypass bi t. Cho bit nhng thay i trong hot ng
ca mch.
0

1k

Vbe=-0.7V

C-->

C-->

12k

3k

Vi

2k

Vo
2k
-

+25V

Hinh P2.14

2.26 Xc nh in p max swing ng ra cho mch hnh P2.14 c =80, vi gi

tr R1 v R2 mi (gi tr c l 3k v 12k). Tnh cc gi tr R1 v R2 mi ny.
V cc ng ti mi.
2.27 in tr Rc ( gi tr bng 1k) hnh P2.14 c =80, b bypass bi t Cc mc
song song vi n. Xc nh in p max swing ng ra vi gi tr R1 v R2 mi (gi
tr c l 3k v 12k). Tnh cc gi tr R1 v R2 mi ny. Tm cng sut tiu tn
trn ti v cng sut tiu th ca transistor.
2.28 Chn R1 v R2 mi cho mch hnh P2.12 vi =100. Xc nh in p max
swing ng ra nu in tr ti gim xung cn 500. Tm cng sut tiu tn trn ti
v transistor.
2.29 Thit k mch emitter-follower dng transistor npn, mch t max swing
ng ra vi cc thng s nh sau: RB=250, Vcc=12V, RE=RL=8, VBE=0.7V,
=200. Xc nh Po(AC), cng sut ngun cung cp, cng sut transistor.
2.30 Phn tch mch hnh P2.15 v xc nh cc thng s sau khi =200,
VBE=0.7V:
a. ICQ v VCEQ
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Nguyn Hu Phc - Khoa KT in t 2

b. in p ng ra.
c. Cng sut ngun.
d. Cng sut ng ra (ac).
e. Hiu sut ca mch.
10V
10k
1k

C-->

0
C-->

Vi

10k

400

Vo
400

C-->

200

10V

Hinh P2.14

Answers:2.1 (a) R1=19k, R2=70.9k; (b)R1=12.7k, R2=47.3k; (c)R1=6.34k,

R2=23.6k. 2.4 (a)R1=2.9k, R2=6.45k; (b) 15V. 2.7 (a)Pvcc=17.1mW, (b)
PR1=0.238W, PR2=2.38mW, PRE=0.439mw, PRC=7.32mW, (c) Ptrans=6.75mW. 2.10 (a)
R1=2.28k, R2=16.3k, (b)4.8V, (d)Ptrans=19.2mW, PL=1.44mW. 2.13 Rc=1863,
vo=5.97Vpp. 2.16 ICQ=2.13mA, VCEQ=3.61V, Vo=2.87V. 2.19 (a)ICQ=-4.04mA, VCEQ=3.10V, (b)R1=4.57k, R2=32.2k; (c) 5.39V, (d) Ptrans=12.5mW, (e)Po=3.62mW. 2.22
(a)R1=369k, R2=21.1k, (c) 8V, (d) Ptrans=40mW, PL=4mW. 2.25 (a) ICQ=-2.12mA,
VCEQ=-18.6V, (c)-4.24V, (d) Vcc decreases to -20.8V and Vo stays the same. 2.28
Ptrans=40mW, PL=16mW.

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