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  • QC Bicmos For Sub 3V Digital Circuits

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    Archana Rk
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    The document discusses different approaches to designing quasi-complementary (QC) Bipolar-CMOS (BiCMOS) circuits for sub-3V digital applications. It describes four QC BiCMOS circuit designs - a, b, c, and d. QC BiCMOS-d is identified as the most suitable approach for circuits operating below 2.5V as it has the smallest delay, which scales with the square root of the supply voltage rather than the cube root for conventional designs. This allows for lower power consumption at reduced voltages.

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    qcbicmos

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    The document discusses different approaches to designing quasi-complementary (QC) Bipolar-CMOS (BiCMOS) circuits for sub-3V digital applications. It describes four QC BiCMOS circuit designs - a, b, c, and d. QC BiCMOS-d is identified as the most suitable approach for circuits operating below 2.5V as it has the smallest delay, which scales with the square root of the supply voltage rather than the cube root for conventional designs. This allows for lower power consumption at reduced voltages.

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    17 views21 pages

    QC Bicmos For Sub 3V Digital Circuits

    Uploaded by

    Archana Rk
    The document discusses different approaches to designing quasi-complementary (QC) Bipolar-CMOS (BiCMOS) circuits for sub-3V digital applications. It describes four QC BiCMOS circuit designs - a, b, c, and d. QC BiCMOS-d is identified as the most suitable approach for circuits operating below 2.5V as it has the smallest delay, which scales with the square root of the supply voltage rather than the cube root for conventional designs. This allows for lower power consumption at reduced voltages.

    Copyright:

    © All Rights Reserved
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    of 21

    QC BICMOS FOR SUB

    3V DIGITAL CIRCUITS
    Two approaches to QC BiCMOS design:


    separation between pull up bipolar and quasi
    pnp.
    Design of discharging circuit.

    QC BiCMOS a(direct
    connection)
    0

    0
    VDD
    VDD-Vbe
    Slower than other QC Bicmos circuits
    Node N1 common to pull up and pull
    down sections.
    Introduce larger parasitic capacitance

    QC BiCMOS a
    0

    1
    VDD
    VDD-Vbe
    QC BiCMOS a
    1

    0
    VDD
    VDD-Vbe
    QC BiCMOS a
    1

    1
    VDD
    0V
    QC BiCMOS-b(shared type)
    VDD
    VDD-Vbe
    0

    0
    Pull up and pull down sections are
    separated
    Discharging capacitance through N4 is
    not affected by N3
    Larger capacitance slows down the
    operation
    QC BiCMOS-b
    VDD
    VDD-Vbe
    0

    1
    QC BiCMOS-b
    VDD
    VDD-Vbe
    1

    0
    QC BiCMOS-b
    VDD
    0V
    1

    1
    QC BiCMOS-c (separate type)
    VDD
    VDD-Vbe
    0

    0
    Cap W
    Reduced W
    is applied.
    Small
    capacitance
    reduced
    delay.

    QC BiCMOS-c
    VDD
    VDD-Vbe
    0

    1
    QC BiCMOS-c
    VDD
    1

    0
    VDD-Vbe
    QC BiCMOS-c
    VDD
    0V
    1

    1
    QC BiCMOS-d (latching type)
    VDD VDD-Vbe
    0

    MN4
    OFF

    MN4
    ON
    Delay Vs supply voltage
    QC bicmos-d suitable for operation below
    2.5v
    Smaller delay is associated with QC
    bicmos-d.
    Tdis_conventional
    3VDD

    Tdis QC BICMOS
    2VDD
    Conventional BiCMOS
    QC-BICMOS
    3 i/p NAND gate
    FC-EPD BI-CMOS
    CPL circuit

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