Models of BJT and Analysis

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Models of BJT and Analysis

So far
The basic construction, appearance,
and characteristics of the transistor
were introduced.

BJTs in CE configuration
The dc biasing of the device was then
examined in detail.

We now begin to examine the small-signal ac
response of the BJT amplifier by reviewing the
models most frequently used to represent the
transistor in the sinusoidal ac domain.

One of our first concerns in the
sinusoidal ac analysis of transistor
networks is the magnitude of the input
signal.
It will determine whether small-signal or
large signal techniques should be
applied.
There is no set dividing line between the
two, but the applicationand the
magnitude of the variables of interest
relative to the scales of the device
characteristicswill usually make it quite
clear which method is appropriate.

The small-signal technique is
introduced in this chapter, and large-
signal applications are examined in
next Chapter .
Two models are commonly used in the
small-signal ac analysis of transistor
networks:
1.The re model and
2. The hybrid equivalent model.


A model is the combination of
circuit elements, properly chosen,
that best approximates the actual
behavior of a semiconductor device
under specific operating conditions.
Once the ac equivalent circuit has
been determined, the graphical
symbol of the device can be replaced
in the schematic by this circuit and the
basic methods of ac circuit analysis
(mesh analysis, nodal analysis, and
Thvenins theorem) can be applied to
determine the response of the circuit.
1. Setting all dc sources to zero and
replacing them by a short-circuit
equivalent
2. Replacing all capacitors by a short-
circuit equivalent
3. Removing all elements bypassed by
the short-circuit equivalents introduced
by steps 1 and 2
4.Redrawing the network in a more
convenient and logical form

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