HOMEWORK 3

PART A
Q1. Compare the characteristics of silicon, germanium and gallium arsenide diode and determine
which you would prefer to use for most practical applications. Refer to manufacturers listing
and compare the characteristics of a germanium and silicon diode of similar maximum ratings.
Q.!etermine Vo and I for the networ"s of #ig.

Fig 2
Q$.%a& 'i(en Pmax = 1) m* for each diode of #ig. $, determine the maximum current rating of
each diode %using the approximate e+ui(alent model&.
%,& !etermine Imax for Vimax = 1-. /.
%c& !etermine the current through each diode at Vimax using the results of part %,&.
%e& 0f only one diode were present, determine the diode current and compare it to the maximum
rating.

Fig 3
PART 1
Q).!etermine the current I for each of the configurations of figure shown ,elow using the
approximate e+ui(alent model for the diode.
Q5. !etermine Vo for the negati(e logic 2R gate of #ig. )

Fig 5
Q6. !etermine vo for each networ" of #ig. 3 for the input shown
Fig 6