2N/PN/SST4391 Series

Vishay Siliconix
Document Number: 70241
S-04028Rev. F, 04-Jan-01
www.vishay.com
7-1
N-Channel JFETs
2N4391 PN4391 SST4391
2N4392 PN4392 SST4392
2N4393 PN4393 SST4393
PRODUCT SUMMARY
Part Number V
GS(off)
(V) r
DS(on)
Max (W) I
D(off)
Typ (pA) t
ON
Typ (ns)
2N/PN/SST4391 4 to 10 30 5 4
2N/PN/SST4392 2 to 5 60 5 4
2N/PN/SST4393 0.5 to 3 100 5 4
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 4391<30 W
D Fast Switchingt
ON
: 4 ns
D High Off-Isolation: I
D(off)
with Low
Leakage
D Low Capacitance: < 3.5 pF
D Low Insertion Loss
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible Off-Error, Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally On Switches
D Current Limiters
D Commutators
DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.
The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
2N4391
2N4392
2N4393
1
2 3
TO-226AA
(TO-92)
Top View
PN4391
PN4392
PN4393
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236
For applications information see AN104 and AN106
.
2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70241
S-04028Rev. F, 04-Jan-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) 40 V . . . . . . . . . . . . . . . . . . .
(SST Prefix) 35 V . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300 _C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) 65 to 200 _C . . . . . . . . . . . . . . . . . .
(PN/SST Prefixes) 55 to 150 _C . . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix) 55 to 200 _C . . . . . . . . . . . . . . . . . .
(PN/SST Prefixes) 55 to 150 _C . . . . . . . . . . .
Power Dissipation : (2N Prefix)
a
(T
C
= 25_C) 1800 mW . . . . . . . . . .
(PN/SST Prefixes)
b
350 mW . . . . . . . . . . . . . . .
Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391 4392 4393
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1 mA, V
DS
= 0 V 55 40 40 40
Gate-Source
V
DS
= 20 V 2N/PN: I
D
= 1 nA
V
Gate-Source
Cutoff Voltage
V
GS(off)
V
DS
= 15 V SST: I
D
= 10 nA
4 10 2 5 0.5 3
2N 50 150 25 75 5 30
Saturation Drain
Current
b
I
DSS
V
DS
= 20 V, V
GS
= 0 V PN 50 150 25 100 5 60 mA
Current
b DSS DS GS
SST 50 25 5
V
GS
= 20 V
2N/SST 5 100 100 100
V
GS
= 20 V
V
DS
= 0 V
PN 5 1000 1000 1000
pA
Gate Reverse Current I
GSS
2N: T
A
= 150_C 13 200 200 200
GSS
PN: T
A
= 100_C 1 200 200 200
nA
SST: T
A
= 125_C 3
Gate Operating Current I
G
V
DG
= 15 V, I
D
= 10 mA 5
2N: V
GS
= 5 V 5 100
2N: V
GS
= 7 V 5 100
pA
2N: V
GS
= 12 V 5 100
V
DS
= 20 V
PN: V
GS
= 5 V 0.005 1
PN: V
GS
= 7 V 0.005 1 nA
PN: V
GS
= 12 V 0.005 1
SST V
DS
= 10 V, V
GS
= 10 V 5 100 100 100 pA
Drain Cutoff Current I
D(off) 2N: V
GS
= 5 V 13 200
V
DS
= 20 V
T = 150_C
2N: V
GS
= 7 V 13 200
T
A
= 150_C
2N: V
GS
= 12 V 13 200
PN: V
GS
= 5 V 1 200
nA
V
DS
= 20 V
T = 100_C
PN: V
GS
= 7 V 1 200
nA
T
A
= 100_C
PN: V
GS
= 12 V 1 200
V
DS
= 10 V
T
A
= 125_C
SST: V
GS
= 10 V 3
I
D
= 3 mA 0.25 0.4
Drain-Source
On-Voltage
V
DS(on)
V
GS
= 0 V I
D
= 6 mA 0.3 0.4 V
On-Voltage
DS(on) GS
I
D
= 12 mA 0.35 0.4
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA 30 60 100 W
Gate-Source I
G
= 1 mA
2N 0.7 1 1 1
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 1 mA
V
DS
= 0 V
PN/SST 0.7
V
2N/PN/SST4391 Series
Vishay Siliconix
Document Number: 70241
S-04028Rev. F, 04-Jan-01
www.vishay.com
7-3
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391 4392 4393
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance
g
fs
6 mS
Common-Source
Output Conductance
g
os
V
DS
= 20 V, I
D
= 1 mA, f = 1 kHz
25 mS
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz 30 60 100 W
2N 12 14 14 14
Common-Source
Input Capacitance
C
iss
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
PN 12 16 16 16
Input Capacitance
iss
f = 1 MHz
SST 13
2N: V
GS
= 5 V 3.3 3.5
2N: V
GS
= 7 V 3.2 3.5
2N: V
GS
= 12 V 2.8 3.5
PN: V
GS
= 5 V 3.5 5
pF
Common-Source
Reverse Transfer C
rss
V
DS
= 0 V
f = 1 MHz
PN: V
GS
= 7 V 3.4 5
Capacitance
rss
f = 1 MHz
PN: V
GS
= 12 V 3.0 5
SST: V
GS
= 5 V 3.6
SST: V
GS
= 7 V 3.5
SST: V
GS
= 12 V 3.1
Equivalent Input
Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
3
nV
Hz
Switching
2N/PN 2 15 15 15
t
d(on)
SST 2
Turn-On Time
2N/PN 2 5 5 5
t
r
V
DD
= 10 V SST 2
V
GS(H)
= 0 V
See Switching Circuit
2N/PN 6 20 35 50
ns
t
d(off)
See Switching Circuit
SST 6
Turn-Off Time
2N/PN 13 15 20 30
t
f
SST 13
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v300 ms duty cycle v3%.
2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70241
S-04028Rev. F, 04-Jan-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current
100
0 10
0
200
160
0
r
DS
I
DSS
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 20 V, V
GS
= 0 V
100
0
1 10 100
On-Resistance vs. Temperature
200
55 25 125
0
15 85
I
D
= 1 mA
r
DS
changes X 0.7%/_C
Turn-On Switching
5
0 10
4
3
2
1
0
S
w
i
t
c
h
i
n
g

T
i
m
e

(
n
s
)
t
d(on)
@
I
D
= 3 mA
t
d(on)
@
I
D
= 12 mA
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50 W
V
GS(L)
= 10 V
Turn-Off Switching
30
0 10
24
18
12
6
0
V
GS(off)
= 2 V
V
GS(off)
= 8 V
t
d(off)
independent of device V
GS(off)
V
DD
= 5 V, V
GS(L)
= 10 V
Capacitance vs. Gate-Source Voltage
30
20
24
18
12
6
0
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
f = 1 MHz
V
DS
= 0 V
0
V
GS(off)
Gate-Source Cutoff Voltage (V)
T
A
Temperature (_C)
V
GS
Gate-Source Voltage (V)
V
GS(off)
Gate-Source Cutoff Voltage (V)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
2 4 6 8
35
120
80
40
5 45 65 105 2 4 6 8
2 4 6 8 4 8 12 16
S
w
i
t
c
h
i
n
g

T
i
m
e

(
n
s
)
V
GS(off)
= 2 V
4 V
8 V
T
A
= 25_C
t
r
V
GS(off)
= 2 V
4 V
8 V
t
d(off)
C
iss
C
rss
t
f
r
D
S
(
o
n
)

D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e

(

)
r
D
S
(
o
n
)

D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e

(

)
r
D
S
(
o
n
)

D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e

(

)
I
D
S
S

S
a
t
u
r
a
t
i
o
n

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
2N/PN/SST4391 Series
Vishay Siliconix
Document Number: 70241
S-04028Rev. F, 04-Jan-01
www.vishay.com
7-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
10
1
10 100 1 k 100 k 10 k
V
DS
= 10 V
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
50
0
0
2 10
500
200
0
g
fs
and g
os
@ V
DS
= 20 V
V
GS
= 0 V, f = 1 kHz
Gate Leakage Current
0 30
T
A
= 125_C
T
A
= 25_C
Common-Gate Input Admittance
100
10
1
0.1
100 1000 200 500
(
m
S
)
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
Common-Gate Forward Admittance Common-Gate Reverse Admittance
100
10
1
0.1
100 1000 200 500
(
m
S
)
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
10
1.0
0.1
0.01
100 1000 200 500
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
(
m
S
)
V
DG
Drain-Gate Voltage (V)
V
GS(off)
Gate-Source Cutoff Voltage (V) f Frequency (Hz)
f Frequency (MHz)
f Frequency (MHz) f Frequency (MHz)
40
30
20
10
4 6 8
I
GSS
@ 125_C
6 12 18 24
400
200
100
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
I
D
= 1 mA
I
D
= 10 mA
g
fs g
os
1 mA
I
GSS
@ 25_C
I
D
= 10 mA
g
ig
b
ig
g
fg
b
fg
g
fg
g
rg
b
rg
+g
rg
10 mA
I
G(on)
@ I
D
1 mA
e
n

N
o
i
s
e

V
o
l
t
a
g
e


n
V
/




H
z
g
o
s

O
u
t
p
u
t

C
o
n
d
u
c
t
a
n
c
e

(

S
)
g
f
s

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
I
G

G
a
t
e

L
e
a
k
a
g
e
)
51
51
1 k
V
IN
Scope
V
DD
R
L
OUT
V
GS(H)
V
GS(L)
2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-6
Document Number: 70241
S-04028Rev. F, 04-Jan-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
10
1
0.1
100 1000 200 500
(
m
S
)
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
f Frequency (MHz)
Transfer Characteristics
100
0 5
80
60
40
20
0
V
GS
Gate-Source Voltage (V)
1 2 3 4
V
DS
= 20 V
T
A
= 55_C
25_C
Transconductance vs. Drain Current
100
10
1
0.1 1.0 10
I
D
Drain Current (mA)
V
GS(off)
= 2 V
Output Characteristics
100
0 10
80
60
40
20
0
V
DS
Drain-Source Voltage (V)
2 4 6 8
125_C
g
og
b
og
T
A
= 55_C
125_C
V
GS
= 0 V
0.5 V
1.0 V
1.5 V
2.0 V
2.5 V
V
GS(off)
= 4 V
25_C
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 4 V
g
f
s

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
I
D

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
SWITCHING TIME TEST CIRCUIT
4391 4392 4393
V
GS(L)
12 V 7 V 5 V
R
L
* 800 W 1600 W 3000 W
I
D(on)
12 mA 6 mA 3 mA
*Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.