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9.6 STRESS AND STRAIN ANALYSIS OF A QUANTUM DOT HETEROSTRUCTURE 225

Figure 9.20. 3D mesh of the matrix.
Figure 9.21. 3D mesh of the island.
Therefore, to work on a more manageable problem, a quarter of the model is being modelled
using mirror symmetry. Note that it is also possible to use a one-eighth model, which then
requires the use of Multi-Point Constraints (MPC) equations (see Chapter 11).
Proper meshing in this case is very important, as it has been found that a poor mesh
usually yields bad results. The 3D mesh of the heterostructure is shown in Figures 9.20
and 9.21. The model is generally divided into two main parts geometrically for the analysts
to distinguish them more conveniently. The parts of the heterostructure comprising the
substrate and the cap layer, as shown in Figure 9.19, is grouped together as the matrix;
and the parts of the heterostructure comprising the wetting layer and the quantum dot itself
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226 CHAPTER 9 FEM FOR 3D SOLIDS
30 nm
30 nm
Z
Y
X
Figure 9.22. Plan view of nite element mesh of quantum dot heterostructure.
Table 9.1. Material properties of
GaAs and InAs
Material E (Gpa)
GaAs 86.96 0.31
InAs 51.42 0.35
are grouped together as the island. Figure 9.22 also shows a plan view of the mesh of the
island (or matrix). It can be seen how smaller elements are concentrated at and around the
pyramidal quantum dot. To generate the mesh here, the analyst has employed the aid of
automatic mesh generators that can still mesh the relatively complex shape of the pyramid
with hexahedron elements. Some mesh generators may not be able to achieve this, and
one may end up with either tetrahedron elements or a mixture of both hexahedron and
tetrahedron elements.
Material properties
In this case study, the heterostructure system of Indium Arsenide (InAs) quantum dots
embedded in a GalliumArsenide (GaAs) substrate and cap layer is analysed. Therefore, the
matrix part of the model will be of the material GaAs and the island part of the model will be
of the material InAs. This is an example of the convenience of dividing the model into these
two parts. It is assumed here that the materials have isotropic properties, listed in Table 9.1.