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PNP General Purpose Amplifier: Absolute Maximum Ratings
PNP General Purpose Amplifier: Absolute Maximum Ratings
N
5
4
0
0
PNP General Purpose Amplifier
2N5400
This device is designed for use as general purpose amplifiers
and switches requiring high voltages.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 120 V
V
CBO
Collector-Base Voltage 130 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 600 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 C
Symbol Characteristic Max Units
2N5400
P
D
Total Device Dissipation
Derate above 25C
625
5.0
mW
mW/C
RJC
Thermal Resistance, Junction to Case 83.3 C/W
RJA
Thermal Resistance, Junction to Ambient 200 C/W
C
B
E
TO-92
2001 Fairchild Semiconductor Corporation 2N5400, Rev A
2
N
5
4
0
0
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0 120 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100 A, I
E
= 0 130 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 A, I
C
= 0 5.0 V
I
CBO
Collector Cutoff Current V
CB
= 100 V, I
E
= 0
V
CB
= 100 V, I
E
= 0, T
A
= 100 C
100
100
nA
A
I
EBO
Emitter Cutoff Current V
EB
= 3.0 V, I
C
= 0 50 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
V
CE
= 5.0 V, I
C
= 50 mA
30
40
40
180
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.5
V
V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
1.0
1.0
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance V
CB
= 10 V, f = 1.0 MHz 6.0 pF
f
T
Current Gain - Bandwidth Product I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
100 400
h
fe
Small-Signal Current Gain I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
30 200
NF Noise Figure V
CE
= 5.0 V, I
C
= 250 A,
R
S
= 1.0 k,
f = 10 Hz to 15.7 kHz
8.0 V
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
Typical Characteristics
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
B
V
-
B
R
E
A
K
D
O
W
N
V
O
L
T
A
G
E
(
V
)
C
E
R
Typical Pulsed Current Gain
vs Collector Current
0.0001 0.001 0.01 0.1 1
0
50
100
150
200
I - COLLECTOR CURRENT (A)
h
-
T
Y
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
F
E
- 40 C
25 C
C
V = 5V
CE
125 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA) V
-
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
C
E
S
A
T
C
= 10
125 C
- 40 C
25 C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
125 C
- 40 C
25 C
C
V = 5V
CE
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT ( mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
B
E
S
A
T
C
= 10
125 C
- 40 C
25 C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
V = 100V
CB
C
B
O
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