The document outlines an assignment on MOS transistor fundamentals and the IC design flow. It includes questions about: 1) explaining the structure and operation of MOS transistors, deriving expressions for depletion region depth and threshold voltage. 2) Deriving drain current equations for different regions of operation. 3) Explaining channel length modulation and two downscaling techniques. 4) Comparing FPGA and ASIC design flows. 5) Explaining Moore's Law effects on power, area and speed with technology scaling. 6) Describing the stages of the IC design flow. 7) Defining macros, bond pads, die size, wafers, yield, vias and routing layer patterns.
The document outlines an assignment on MOS transistor fundamentals and the IC design flow. It includes questions about: 1) explaining the structure and operation of MOS transistors, deriving expressions for depletion region depth and threshold voltage. 2) Deriving drain current equations for different regions of operation. 3) Explaining channel length modulation and two downscaling techniques. 4) Comparing FPGA and ASIC design flows. 5) Explaining Moore's Law effects on power, area and speed with technology scaling. 6) Describing the stages of the IC design flow. 7) Defining macros, bond pads, die size, wafers, yield, vias and routing layer patterns.
The document outlines an assignment on MOS transistor fundamentals and the IC design flow. It includes questions about: 1) explaining the structure and operation of MOS transistors, deriving expressions for depletion region depth and threshold voltage. 2) Deriving drain current equations for different regions of operation. 3) Explaining channel length modulation and two downscaling techniques. 4) Comparing FPGA and ASIC design flows. 5) Explaining Moore's Law effects on power, area and speed with technology scaling. 6) Describing the stages of the IC design flow. 7) Defining macros, bond pads, die size, wafers, yield, vias and routing layer patterns.
The document outlines an assignment on MOS transistor fundamentals and the IC design flow. It includes questions about: 1) explaining the structure and operation of MOS transistors, deriving expressions for depletion region depth and threshold voltage. 2) Deriving drain current equations for different regions of operation. 3) Explaining channel length modulation and two downscaling techniques. 4) Comparing FPGA and ASIC design flows. 5) Explaining Moore's Law effects on power, area and speed with technology scaling. 6) Describing the stages of the IC design flow. 7) Defining macros, bond pads, die size, wafers, yield, vias and routing layer patterns.
ASSIGNMENT_1 [IC Design Flow & CMOS FUNDAMENTALS: MOS Transistor]
1. Explain about MOS Structure.
2. Explain the behavior of MOS System under external bias in different regions with its cross sectional view and energy band diagram. Derive the expression for maximum depth of depletion region. 3. Explain the Energy-Band Diagram for a MOS Structure Derive the expression for Threshold Voltage. 4. Derive the expression for drain current Id as a function of VGS and VDS for all three region of operation of MOSFET. 5. Explain Channel-Length Modulation. 6. Explain two different down scaling techniques for MOSFET. Which technique is preferable? 7. Explain the FPGA and ASIC Design flow along with the advantages and disadvantages of each. 8. What is Moores law? Which effects occurs in terms of power, area and speed if technology shrinks towards lower nodes? 9. Explain the different stages involved in IC design flow and explain each stage in brief. 10. What is Macro? 11. Explain the fabrication process of nMOS. 12. What is bond pad and why it is needed? 13. What is die size? 14. What is wafer and how it is made? 15. What is yield? 16. What is Via? 17. Why there is a need of routing the consecutive layers horizontally and vertically? What is the disadvantage if we route all the layers in one pattern either horizontal or vertical?