CMOS Assignment 1

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ASSIGNMENT_1 [IC Design Flow & CMOS FUNDAMENTALS: MOS Transistor]

1. Explain about MOS Structure.


2. Explain the behavior of MOS System under external bias in different regions with its
cross sectional view and energy band diagram. Derive the expression for maximum
depth of depletion region.
3. Explain the Energy-Band Diagram for a MOS Structure Derive the expression for
Threshold Voltage.
4. Derive the expression for drain current Id as a function of VGS and VDS for all three
region of operation of MOSFET.
5. Explain Channel-Length Modulation.
6. Explain two different down scaling techniques for MOSFET. Which technique is
preferable?
7. Explain the FPGA and ASIC Design flow along with the advantages and disadvantages of
each.
8. What is Moores law? Which effects occurs in terms of power, area and speed if
technology shrinks towards lower nodes?
9. Explain the different stages involved in IC design flow and explain each stage in brief.
10. What is Macro?
11. Explain the fabrication process of nMOS.
12. What is bond pad and why it is needed?
13. What is die size?
14. What is wafer and how it is made?
15. What is yield?
16. What is Via?
17. Why there is a need of routing the consecutive layers horizontally and vertically? What
is the disadvantage if we route all the layers in one pattern either horizontal or vertical?

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