ECD 442 Power Electronics 1

Power MOSFETs
Two Types
Depletion Type
Channel region is already diffused between the
Drain and Source
Deplete, or pinch-off the Channel
Enhancement Type
No channel region exists between the Drain and
Source
Invert the region between the Drain and Source
to induce a channel

ECD 442 Power Electronics 2
Depletion MOSFET
ECD 442 Power Electronics 3
N-Channel Depletion MOSFET
Normally Reverse-Bias the Gate-Source Junction
ECD 442 Power Electronics 4
Enhancement MOSFET
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N-Channel Enhancement MOSFET
The Gate-Source Junction will be Forward-Biased
The bias voltage must be greater than a threshold voltage
A Channel region is induced between the Drain and Source
ECD 442 Power Electronics 6
Drain Characteristics
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Steady-State Characteristics
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Switching Characteristics
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Equivalent Circuit
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Switching Model
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Switching Waveforms and Times
ECD 442 Power Electronics 12
Turn-on Delay, t
d(on)
= time to charge the input
capacitance to V
T

Rise time, t
r
= Charging time to charge the input
capacitance to the full gate voltage, V
GSP
in order to drive
the transistor into the linear region of operation
ECD 442 Power Electronics 13
Turn-off delay time, t
d(off)
= time for the input capacitance to
discharge from overdrive voltage V
1
to pinch-off.
V
GS
must decrease significantly for V
DS
to rise.
Fall time, t
f
= time for the input capacitance to discharge
from pinch-off to the threshold voltage.