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  • Working Principle of A Semiconductor Based Solar Cell: Band Gap II - Electrons in Molecular Bonds

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    The document discusses the molecular bonding structure of silicon that gives rise to its semiconductor properties. It explains how silicon atoms bond by hybridizing their 3s and 3p orbitals into sp3 orbitals. This leads to the formation of bonding and anti-bonding molecular orbitals that make up the valence and conduction bands, giving silicon its characteristic band gap. Different semiconductor materials have different band gap energies depending on their crystal lattice structure and bonding properties.

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    ET3034TUx-2.2.2-slides

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    The document discusses the molecular bonding structure of silicon that gives rise to its semiconductor properties. It explains how silicon atoms bond by hybridizing their 3s and 3p orbitals into sp3 orbitals. This leads to the formation of bonding and anti-bonding molecular orbitals that make up the valence and conduction bands, giving silicon its characteristic band gap. Different semiconductor materials have different band gap energies depending on their crystal lattice structure and bonding properties.

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    © All Rights Reserved
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    Download as pdf or txt
    12 views17 pages

    Working Principle of A Semiconductor Based Solar Cell: Band Gap II - Electrons in Molecular Bonds

    Uploaded by

    pfyl
    The document discusses the molecular bonding structure of silicon that gives rise to its semiconductor properties. It explains how silicon atoms bond by hybridizing their 3s and 3p orbitals into sp3 orbitals. This leads to the formation of bonding and anti-bonding molecular orbitals that make up the valence and conduction bands, giving silicon its characteristic band gap. Different semiconductor materials have different band gap energies depending on their crystal lattice structure and bonding properties.

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    © All Rights Reserved
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    of 17

    Arno Smets

    Working Principle of a
    Semiconductor Based Solar Cell
    Band Gap II - Electrons in Molecular Bonds
    Week 2.2.2
    Bonding of electrons in Si network
    3s
    3p
    Bonding of electrons in Si network
    3s
    3p
    Molecular description of band gap
    sp
    3
    sp
    3
    Bonding
    Anti-Bonding
    Molecular description of band gap
    Bonding
    Anti-Bonding
    sp
    3
    sp
    3
    Molecular description of band gap
    sp
    3
    sp
    3
    Bonding
    Anti-Bonding
    conduction
    valence
    Band gap
    Band gap
    Molecular description of band gap
    conduction
    valence
    Band gap
    LUMO
    HOMO
    Semiconductor Materials
    IV semiconductors: Si, Ge
    Carbon, silicon and Germanium
    L
    a
    t
    t
    i
    c
    e

    c
    o
    n
    s
    t
    a
    n
    t
    Lattice constant
    =
    Bond Length
    4
    3

    Semiconductor Materials
    IV semiconductors: Si, Ge
    III-V semiconductors:
    GaAs:
    Semiconductor Materials
    IV semiconductors: Si, Ge
    III-V semiconductors:
    II-VI semiconductors
    CdTe:
    GaAs:

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