Etch Rates Table1

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c
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Etch Rates for Micromachining and IC Processing (A/min)
v. 4.4 29 July 1996
c
c
U.C.
Berkeley
Microfabrication
Laboratory
/
Berkeley
Sensor
& Actuator Center / Kirt R. Williams
c
c
The top etch rate was measured by the author with fresh solutions, clean chambers, etc.
c
c
c
The center and bottom values are the low and high etch rates observed by the author and others in the UCB Microlab using fresh and used solutions, clean and "dirty" chambers, etc.
c
c
c
cc
MATERIAL
c
c ETCHANT
c
c ciiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiii
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
EQUIPMENT
TARGET c c SC Si c Poly c Poly c Wet c Dry c LTO c PSG c PSG c Stoic c Low- c Al/ c Sput c Sput c Sput c OCG c Olin c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
+
c
undop
Ox
Ox
undop
unanl
annld
Nitrid
Nitrid
2%
Si
Tung
Ti
Ti/W
820PR
HntPR
CONDITIONS
MATERIAL
<100>
n
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c Concentrated HF (49%)
c
cc
Silicon
- c
0 c
- c 23k c
F c >14k c
F c 36k c
140 c
52 c
42 c <50 c
F c
- c
P 0 c
P 0 c
c
c
c
cc
c
c
c 18k c
c
c
c
c
c
c
c
c
c
Wet Sink
oxides
30 c
0 c
c
c
c
cc
c
c
c 23k c
c
c
c
c
c
c
c
c
c
Room Temperature
52 c
42 c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c 10:1 HF
Silicon
- c
7 c
0 c 230 c 230 c
340 c 15k c 4700 c
11 c
3 c 2500 c
0 c 11k c <70 c
0 c
0 c
c
cc
c
c
Wet Sink
oxides
c
cc
c
c
c
c
c
c
c
c
c
c 2500 c
c
c
c
c
c
c
c
cc
Room Temperature
12k c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
Silicon
- c
0 c
0 c
97 c
95 c
150 c
W c 1500 c
6 c
1 c
W c
0 c
- c
- c
0 c
0 c
c 25:1 HF
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Wet Sink
oxides
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Room Temperature
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c 5:1 BHF
c
cc
Silicon
- c
9 c
2 c 1000 c 1000 c 1200 c 6800 c 4400 c
9 c
4 c 1400 c <20 c
F c 1000 c
0 c
0 c
c
c
c
c
c
c
c
c 900 c
c
c
c 3500 c
c
c 0.25 c
c
c
c
Wet Sink
oxides
3 c
c
c
c
cc
c
c
c 1080 c
c
c
c 4400 c
c
c
c
c
c
Room Temperature
4 c
20 c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c Phosphoric Acid (85%)
Silicon
7
0.7
0.8
<1
37
24
28
19
9800
550
390
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Heated Bath with Reflux
nitrides
9
28
19
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
160C
24 c
42 c
42 c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Silicon
1500 c 3100 c 1000 c
87 c
W c
110 c 4000 c 1700 c
2 c
3 c 4000 c 130 c 3000 c
- c
0 c
0 c
c Silicon Etchant (126 HNO3 : 60 H2O : 5 NH4F)
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Wet Sink
1200
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Room Temperature
c
cc
c 6000 c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
<100> Silicon
14k c >10k c
F c
77 c
- c
94 c
W c 380 c
0 c
0 c
F c
0 c
- c
- c
F c
F c
c KOH (1 KOH : 2 H2O by weight)
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Heated Stirred Bath
41
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
80C
77 c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
- c <10 c
<9 c
0 c
0 c
0 c
- c <10 c
0 c
2 c 6600 c
- c
0 c
- c
0 c
0 c
c Aluminum Etchant Type A (16 H3PO4 : 1 HNO3 : 1 HAc : 2 H2O) c Alumnium c c
c
c
c
c
c
c
c
c
c
c 2600 c
c
c
c
c
Heated Bath
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
50C
c
cc
c
c
c
c
c
c
c
c
c
c 6600 c
c
c
c
c
c Titanium Etchant (20 H O : 1 H O : 1 HF)
c
c
c
Titanium
- c
12 c
- c 120 c
W c
W c
W c 2100 c
8 c
4 c
W c
0 c 8800 c
- c
0 c
0 c
2
2 2
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Wet Sink
0 c
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Room Temperature
<10
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c H O (30%)
c
c
c
Tungsten
0
0
0
0
0
0
0
0
0
<20
190
0
60
<2
0
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c 2 2
c
cc
c
c
c
c
c
c
c
c
c
c
c 190 c
c
c
Wet Sink
60 c
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c 1000 c
c 150 c
c
Room Temperature
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c Piranha (50 H SO : 1 H O )
Cleaning
off
0
0
0
0
0
0
0
0
1800
2400
F
F
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
2
4
2 2
c
c
c metals and c c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Heated Bath
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
120C
organics
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c Acetone
- c
0 c
0 c
0 c
0 c
0 c
- c
0 c
0 c
0 c
0 c
- c
0 c
- c >44k c >39k c
c Photoresist c c
c
c
cc
c
Wet Sink
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Room Temperature
c
c
cc
c
Silicon
W c 1900 c 2100 c 4700 c
W c 4500 c 7300 c 6200 c 1800 c
1900 c
- c
W c
W c
W c 2200 c 2000 c
c CF4+CHF3+He (90:30:120 sccm)
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Lam 590 Plasma
oxides
cc
c
c 1400 c 1500 c 2400 c
c
c 3000 c 2500 c
c
c
c
c
c
c
c
c
c
cc
c
450W, 2.8T, gap=0.38cm, 13.56MHz
c 1900 c 2100 c 4800 c
c
c 7300 c 7200 c
c
c
c
c
c
c
c
c
c
cc
c
Silicon
W c 2200 c 1700 c 6000 c
W c 6400 c 7400 c 6700 c 4200 c
3800 c
- c
W c
W c
W c 2600 c 2900 c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Lam 590 Plasma
oxides
cc
c
c 2200 c 1700 c 2500 c
c 6000 c 5500 c 5000 c 4000 c
c
c
c
c
c 2600 c 2900 cc
c
cc
c
850W, 2.8T, gap=0.38cm, 13.56MHz
c 2700 c 2100 c 7600 c
c 6400 c 7400 c 6700 c 6800 c
c
c
c
c
c 6700 c 7200 c
c
cc
c
Silicon
300 c 730 c
670 c 310 c 350 c
370 c 610 c 480 c
820 c
620 c
- c
W c
W c
W c
690 c
630 c
c SF6+He (13:21 sccm)
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Technics PE II-A Plasma
nitrides
300 c 730 c
670 c
550 c
690 c
cc
c
c
c
c
c 230 c
c
c
c
c
c
c
c
100W, 250mT, gap2.6cm, 50kHz sq. wave
760 c
800 c
830 c
c c 1000 c 800 c
c
c
c
c
c 480 c
c
c
c
c
c
c
c
c c 1100 c 1900 c
c
Silicon
W c 730 c 710 c
730 c
W c 900 c 1300 c
1100 c
- c
W c
W c
W c
690 c
600 c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
nitrides
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
c
Thin
W c 6400 c 7000 c 300 c
W c
280 c 530 c 540 c 1300 c
870 c
- c
W c
W c
W c 1500 c 1400 c
c SF6+He (175:50 sccm)
cc
c
c
c 2000 c 220 c
c
c
c
c
c
c
c
c
c
c 1300 c
Lam 480 Plasma
silicon
830
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
150W, 375mT, gap=1.35cm, 13.56MHz
nitrides
cc
c
c
c 7000 c 400 c
c
c
c
c 2300 c
c
c
c
c
c 1500 c
c SF +He (175:50 sccm)
cc
c
Thick
W c 8400 c 9200 c 800 c
W c
770 c 1500 c 1200 c 2800 c
2100 c
- c
W c
W c
W c 3400 c 3100 c
6
c
c
cc
c
c
c
c
c
c
c
c
c 2100 c
c
c
c
c
c 3100 c
Lam 480 Plasma
silicon
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
250W, 375mT, gap=1.35cm, 13.56MHz
nitrides
4200
3400
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c SF (25 sccm)
cc
c
Thin
W c 1700 c 2800 c 1100 c
W c 1100 c 1400 c 1400 c 2800 c
2300 c
- c
W c
W c
W c 3400 c 3100 c
6
c
c
c
c
c
c
c
c 1100 c
c
c
c
c 2800 c
c
c
c
c
c 2900 c
Tegal Inline Plasma 701
silicon
c
c
cc
c
c
c
c 1600 c
c
c
c
c 2800 c
c
c
c
c
c 3400 c
125W, 200mT, 40C
nitrides
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c CF +CHF +He (45:15:60 sccm)
Si-rich
W c 350 c
360 c 320 c
W c
320 c 530 c 450 c
760 c
600 c
- c
W c
W c
W c
400 c
360 c
cc
c
4
3
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
silicon
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
100W, 300mT, 13.56MHz
nitrides
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c Cl +He (180:400 sccm)
Silicon
W c 5700 c 3200 c
8 c
- c
60 c 230 c 140 c
560 c
530 c
W c
W c
- c
- c 3000 c 2700 c
cc
c
c
c 2
c
c
c
c
c
c
c
c
c
c
c
c
c 2400 c
Lam Rainbow 4420 Plasma
5000 c 3400 c 3200 c
8 c
c
c
c c 5000 c 6300 c 3700 c 380 c
c
c
c
c
c
c
c
c
c
c
c 3000 c
275W, 425mT, 40C, gap=0.80cm, 13.56MHz
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c HBr+Cl2 (70:70 sccm)
Silicon
W c 450 c
460 c
4 c
- c
0 c
0 c
0 c
870 c
26 c
W c
W c
- c
- c
350 c
300 c
cc
c
c
c
c
c
c
c 450 c
c
c
c
c
c
c
c
c
c
c
c
Lam Rainbow 4420 Plasma
4 c
350 c
c
c
cc
c
c 740 c
c
c
c
c
c
c
c
c
c
c
c
200W, 300mT, 40C, gap=0.80cm, 13.56MHz
10 c
500 c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c Cl2+BCl3+CHCl3+N2 (30:50:20:50 sccm)
Aluminum
W
4500
W
680
670
750
W
740
930
860
6000
W
6300
6300
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Lam 690 RIE
c
c
c
c
c
c
c
c
c
c 1900 c
c
c
c 3700 c 3300 cc
c
cc
c
c
c
c
c
c
c
c
c
c
c 6400 c
c
c
c 6300 c 6100 c
250W, 250mT, 60C, 13.56MHz
cc
c
Tungsten
W c 5800 c 5400 c 1200 c
W c 1200 c 1800 c 1500 c 2600 c
2300 c
- c 2800 c
W c
W c 2400 c 2400 c
c SF6 (80 sccm)
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
1900 c
c
c
c 2000 c
c
c
c
c
c
c 2800 c
c
c 2400 c
c
c
c
cc
c
c
c 2000 c
c
c
c
c
c
c
c 4000 c
c
c 4000 c
200W,
150mT,
40C,
13.56MHz
2300
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Descumming
0
0
0
0
0
0
0
0
0
0
0
0
350
300
c
c O2 (51 sccm)
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c photoresist c c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Ashing
- c
0 c
0 c
0 c
0 c
0 c
0 c
0 c
0 c
0 c
0 c
0 c
0 c
- c 3400 c 3600 c
c O2 (51 sccm)
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c Photoresist c c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Silicon
- c
0 c
0 c 660 c
W c
780 c 2100 c 1500 c
10 c
19 c
A c
0 c
A c
- c
P 0 c
P 0 c
c HF Vapor
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
1 cm over plastic dish
oxides
c
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
Room temperature and pressure
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c XeF
c
c
c
Silicon
4600
1900
1800
0
0
0
0
120
2
0
800
290
0
0
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
2
c
c
c c 2900 c 1100 c 1100 c
c
c
c
c
c
c
c 440 c
c
c
Simple custom vacuum chamber
120 c
0 c
50 c
c
c
cc
c
c 2500 c 2300 c
c
c
c
c
c
c
c
c 1000 c 380 c
c
c
Room temperature, 2.6 Torr
100k
180
2
c
cc
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
c
.
.
Notation: - =test not performed; W=not performed, but known to Work ( >
100 A/min); F=not performed, but known to be Fast ( >
10 kA/min);
P=some of film Peeled during etch or when rinsed; A=film was visibly Attacked and roughened.
Rates measured are rounded to two significant figures.
Etch areas are all of a 4-inch wafer for the transparent films and half of the wafer for single-crystal silicon and the metals.
Etch rates will vary with temperature and prior use of solution or plasma chamber, area of exposure of film, other materials present (e.g., photoresist), film impurities and microstructure, etc. Some variation should be expected.

Etch Rates Table1

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Etch Rates Table1

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