Design and Simulation of A Carbon Nanotube-Based Adjustable Nano-Electromechanical Shock Switch

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Design and simulation of a carbon nanotube-based adjustable

nano-electromechanical shock switch


S.E. Khadem

, M. Rasekh, A. Toghraee
Department of Mechanical Engineering, Tarbiat Modares University, P.O. Box 14115-177, Tehran, Iran
a r t i c l e i n f o
Article history:
Received 27 September 2010
Received in revised form 13 August 2011
Accepted 16 August 2011
Available online 23 August 2011
Keywords:
Nano-switch
Nano-electromechanical systems (NEMS)
Carbon nanotubes
Mechanical shock
a b s t r a c t
In this paper, design and simulation of a carbon nanotube-based nano-electromechanical
shock switch is reported. The switch is represented by a carbon nanotube placed over a
ground electrode. Response of the nano-switch based on nonlinear beam theory is studied
using Galerkins method. Up to ve mode shapes have been utilized to capture the
response of system and results are validated by comparing with Molecular Dynamics
(MD) simulation. Due to their high stiffness, CNTs cannot be actuated to pull-in (switch
ON) state by conventional mechanical shocks in range of 101000 g under one-step volt-
age. Here, a multi-steps voltage modication is applied to enhance the actuation. Employ-
ing this method, a nano-switch with xed geometry can be adjusted to be triggered by
wide rang of mechanical shocks (101000 g).
2011 Elsevier Inc. All rights reserved.
1. Introduction
The rapid growth of micro/nano scale fabrication technologies in recent years has led to the development of various
micro/nano-electromechanical systems (MEMS/NEMS). Several CNT-based NEMS have already been demonstrated, logical
nanodevices [1], nanotweezers [2], a random access memory [3], sensors [48], nano relay [9] and nano-switches
[1014]. Even though NEMS can be designed using a number of materials, carbon nanotube based NEMS are attractive
due to their remarkable properties including small size, low density, high stiffness, exibility and strength, as well as excel-
lent electronic properties and unique coupled electromechanical behaviors [10,15]. Nanotubes have the potential to enhance
the development of unique nano-electromechanical systems (NEMS). Carbon nanotube based nano-switches have the capa-
bility to offer very high resonant frequencies in the gigahertz range because of their high stiffness [14]. In addition, they have
advantage of very low energy consumption [16]. Electromechanical nano-switches, can be designed by suspending a nano-
tube over a ground electrode. When a nanotube undergoes electrostatic and inter-atomic (van der Waals) forces, it deects.
This displacement is proportional to these forces and when forces are large enough, the tube sticks to the ground. However,
the potential difference (electrostatic force) can be exerted in a way that brings the tube close to the ground electrode but it
does not stick to the ground. This way, any other external load like a mechanical shock can move the beam toward the
ground and actuate the tube to pull-in state. This is the theoretical basis for simulation of switches detecting mechanical
shocks.
Studies have been done investigating microstructure-switches sensing mechanical shocks. They have used different
methods to simulate the behavior of a switch. Jia et al. [17] have analyzed the response of the micro-cantilever shocking-
acceleration switches using single degree of freedom (SDOF) method. Coster et al. [18] studied the effect of shock on RF
0307-904X/$ - see front matter 2011 Elsevier Inc. All rights reserved.
doi:10.1016/j.apm.2011.08.029

Corresponding author.
E-mail address: khadem@modares.ac.ir (S.E. Khadem).
Applied Mathematical Modelling 36 (2012) 23292339
Contents lists available at SciVerse ScienceDirect
Applied Mathematical Modelling
j our nal homepage: www. el sevi er . com/ l ocat e/ apm
MEMS. Younis et al. [1921] have investigated combined effect of shock and electrostatic forces and compared the reduced-
order model and FE method.
Besides, researchers have addressed studies on nano-switches behavior and characteristics. Ramezani et al. [22,23] have
introduced closed-form solutions for nano-cantilever beams under electrostatic and interatomic forces with help of Greens
function. In their studies, they have reported the effect of van der Waals, beam length and initial gap on pull-in instability.
Wang et al. [2] have studied pull-in instability of carbon nanotube tweezers under the inuence of van der Waals forces.
They have considered only van der Waals interactions and the inuence of nanotube parameters such as the interior radius,
gap distance between the two nanotubes, etc., on the pull-in instability. Lin and Zhao [24] have addressed the Casimir effect
on the pull-in parameters of nano-switches using perturbation theory to nd an approximate analytical expression for the
critical pull-in gap. Kang et al. [3] used nite element method (FEM) to study currentvoltage (IV) curves and geometrical
parameters of nano-electromechanical carbon nanotube random access memories (NRAM) in order to obtain structural con-
ditions for the nonvolatile NRAMs. Dequences et al. [11,12] have addressed static and dynamic analysis of carbon nanotube-
based switches. They have applied Molecular Dynamic (MD) and MD/FE methods for their simulations. In their works, they
have employed detailed van der Waals forces and graphite layers for modeling.
Although Molecular Dynamic simulations can be used to simulate the performance of NEMS more accurately, studies
have conrmed that continuum methods can also be applied on nano devices under specic geometrical circumstances
[25]. In addition, continuum models can also be used for large deformation analysis of irregular-shaped carbon nanotubes
[26]. A geometric assumption allows the use of one-dimensional theory for capturing the dominant displacement. This
assumption is valid when the aspect ratio of nanotube (the diameter to length) is much less than unity. In this study, one
may use Galerkins method based on continuum theory to investigate the response of carbon nanotube-switches under
the effect of electrostatic force, van der Waals interaction and mechanical shock. The effect of shock on a nano-tube switch
has not been studied yet. Development of nano-switches sensing shock is of great importance, since nano-switches have
merits of very small size, very low energy consumption and ease of fabrication. Fabrication of nanostructures by means
of self-assembly instead of photolithography and etch steps will reduce fabrication complexity and costs signicantly
[16]. Consequently, nano-switches sensing mechanical shocks can be used widely in various applications and replaced
the complicated sensorcontrolleractuator systems instead.
Due to their very high stiffness, carbon nanotubes cannot be excited by shocks even in range of 50,000 g. Here, we have
introduced a modied stepped voltage which can bring the beam very close to pull-in state so that the switch can be acti-
vated by shocks even in range of 10 g. Using this approach, a nano-switch with xed geometry that is capable of being trig-
gered by wide rang of shocks (101000 g) is simulated.
2. Modeling of the nano-switch
The carbon nanotube based switch has been made of two main elements which are the movable inertial element and the
xed element. Here, a carbon nanotube plays role of the movable component of the switch and the xed ground is graphite
layers. There are three sources for external forces acting on nanotube; electrostatic, van der Waals forces and mechanical
shock.
When there is a potential difference between the ground and the tube, it creates an electrical eld that exerts attraction
force between the tube and the ground (like two plates of a capacitor). In addition, since the dimensions of system are in
nano scale, molecular interactions should be taken into consideration. One of these forces is the van der Waals force, which
has dominant effects when the distance between ground and tube becomes less than 2 nm. Both of these forces tend to move
the nanotube from its original position toward the ground. On the other hand, there is the elastic property of nanobeam
which resists to this movement and acts against these forces and tries to bring the tube to its initial position. When the po-
tential difference is below a specic amount, there is a position where electrostatic, van der Waals and elastic forces are in
equilibrium and as a result the nanotube is in equilibrium position. But when the applied potential difference between the
tube and the ground plate goes beyond a certain potential, elastic forces fail to eliminate the effect of external forces (elec-
trostatic and van der Waals) and the tube becomes unstable and moves toward the ground plate and sticks to it. This is called
the pull-in state and the potential which causes the tube to collapse onto the ground plate is called the pull-in voltage. When
the applied voltage is larger than pull-in voltage, the nanotube touches the ground plate and can close a circuit and give a
signal; here the switch is in ON state. When the potential is removed, elastic forces restore the beam to its rst position, and
nanotube loses its contact with the ground, now the switch is in the OFF state.
As mentioned before, two types of forces act on nano-switch as external forces: electrostatic and van der Waals. In order
to simulate the response of a nano-switch, mathematical models and relations for these forces are required.
2.1. van der Waals interactions
The van der Waals forces between ground and nanotube can be obtained from the LennardJones potential which
describes potential between two atoms as follows:
/
ij

c
12
r
12
ij

c
6
r
6
ij
; 1
2330 S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339
where r
ij
is the distance between atoms i and j and C
6
, C
12
are van der Waals constants.
These constants vary for different interactions between different materials. For carboncarbon interaction these values
are C
6
= 15.2 eV
6
and C
12
= 2.42 keV
12
[12]. These interactions are between atoms of carbon nanotube and layers of
graphite in the ground plate. Consequently, to have the total van der Waals (vdW) forces acting on tube, interactions
between nanotube and each layer should be added together. In the next step, the layers far from tube are modeled as a bulk
mass and the effect of the bulk mass is added to previous terms. However, when the tube has been placed far from the
ground, the effect of van der Waals forces becomes very weak and can be ignored comparing to the electrostatic forces.
LeonardJones relation gives the potential energy, thus to calculate the vdW forces one should differentiate with respect
to displacement. Differentiating Eq. (1) with respect to r and integrating over the whole graphite plate the expression for the
vdW forces exerting on an atom on the carbon nanotube and a single graphene layer is obtained Fig. 1.
F
graphite
2pr
c
12
r
11
a

c
6
r
5
a
_ _
; 2
where r
a
is the distance between the atom on the nanotube and the graphene layer and r = 38 nm
2
is the graphene surface
density [12]. Relation (2) gives the interactions between one atom and one layer. In order to have the force per unit length of
tube this equation should be integrated for a circular section of CNT and layers of graphite. By integrating Eq. (2) over a ring
of the nanotube, and considering N layers of graphite (Fig 2), the distributed vdW load can be obtained.
q
vdW

N
n1
_
p
p
2pr
c
12
n 1d r R Rsinh
11

c
6
n 1d r R Rsinh
5
_ _
rRdh: 3
2.2. Electrostatic interactions
The combination of nanotube and the ground form a capacitor, so the electrostatic forces can be calculated by nding the
relation for capacitance of the capacitor, the capacitance per unit length for the cylindrical beam over a conductive ground
plate is given by
Cg
2pe
0
arccosh 1
g
R
_ _ ; 4
where g, gap, is the distance between the tube and the ground plate, and e
0
8:854 10
12
C
2
N
1
m
2
is permittivity of
vacuum. So, the electrostatic force per unit length, q
elec
, is then given by
q
elec

d
1
2
CgV
2
_ _
dg

pe
0
V
2

gg 2R
_
arccosh
2
1
g
R

; 5
where g = r + w(x, t) with w being the bending deection, r initial gap, and V the applied voltage.
2.3. Governing equation for continuum modeling
In this paper, the deformation of a nanobeam without considering the effect of mechanical shock is modeled by a
well-known nonlinear beam equation
Fig. 1. Model of nano-switch.
S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339 2331
EI
@
4
w
@x
4
c
@w
@t
qA
@
2
w
@t
2

EA
2L
_
L
0
@w
@x
_ _
2
dx
_ _
@
2
w
@x
2
q
vdW
q
elec
; 6
where w is the transverse deection of the nanotube, q is the density, A is the cross-sectional area, E is the elastic modulus, I
is the moment of inertia, c is the damping coefcient and L is length of beam. The integral term in Eq. (6) represents the non-
linear stretching. This term should be taken into consideration when beam has xedxed boundary conditions. Conse-
quently, the term is zero for xedfree (cantilever) nanobeam.
3. Solving equations and verication of results
As an enhancement and to reduce computational errors, nondimensional variables have been used as follows:
~
t

qAL
4
EI

;
^
x
x
L
;
^
t
t
~
t
;
^
w
w
r
: 7
Next, a reduced-order model is established by discrediting Eq. (6) into a nite-degree-of-freedomsystem including ordinary-
differential equations in time. The linear mode shapes of free vibration of beam which satisfy all boundary conditions can be
used as shape functions in Galerkins method. To this end, the deection of nano beam is described using functions in time
and space as follows:
wx; t

N
i1
q
i
t/
i
x; 8
where q
i
(t) is the ith generalized coordinate and /
i
(x) is the ith mode shapes of the free vibration of nanobeam with similar
boundary conditions. Multiplying Eq. (6) by /
i
(x), substituting Eq. (8) into the resulting equation and integrating from x = 0
to 1 (0 to L) gives the reduced-order model. The behavior of the nanobeam can be simulated by solving the obtained set of
ordinary differential equations of the reduced-order model in time. Studies have shown that using more than three modes
are required to capture the dynamic response of beam [21]. Hence, in this work up to 5 mode shapes have been used. As a
verication and comparison with Molecular Dynamics method, the response of a xedxed carbon nanotube with the same
geometrical and physical properties which have been reported in MD method [12] is studied. The physical properties of the
single wall carbon nanotube (SWCNT) are listed in Table 1 [14].
To demonstrate the accuracy of the present work, the dynamic and static simulation results are compared with MD sim-
ulation [12]. Figs. 3 and 4 show the gap versus applied voltage for the initial gap of 1 and 2 nm, respectively. A good agree-
ment in static pull-in analysis is realized from Figs. 3 and 4. In addition, Table 2 shows a good agreement for reported static
and dynamic pull-in voltage in different initial gaps.
Fig. 2. van der Waals interaction of a SWCNT over a graphite electrode.
2332 S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339
Table 1
SWCNT properties.
SWCNT properties Symbol Value Unit
Density q 1330 kg/m
3
Cross sectional area A 1.024 10
18
m
2
Radius R 0.68 10
9
m
Length L 20.7 10
9
m
Moment of inertia I 2.134 10
37
m
4
Yongs modulus E 1054 10
9
Pa
Applied voltage (V)
G
a
p
,
g
(
n
m
)
0 0.5 1 1.5 2
0.4
0.5
0.6
0.7
0.8
0.9
1
molecular dynamic
nonlinear simulation
Initial gap=1 nm
Fig. 3. Gap vs. applied voltage for initial gap 1 nm.
Applied voltage (V)
G
a
p
,
g
(
n
m
)
0 2 4 6 8 10
0.5
1
1.5
2
molecular dynamic
nonlinear simulation
Initial gap=2 nm
Fig. 4. Gap vs. applied voltage for initial gap 2 nm.
Table 2
Static and dynamic pull-in voltages for different initial gaps.
Initial gap, r (nm) Static pull-in voltage (V) Dynamic pull-in voltage (V)
MD [12] Present work MD [12] Present work
1 1.89 1.83 1.64 1.59
2 10 10.12 9 9.08
3 19.7 20.31 17.8 18.05
S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339 2333
Fig. 5. Sample response of nano-switch under mechanical shock which shows the distance between steady state and pull-in limit (over-shoot),
shock = 50,000 g, L = 1000 nm, V = 0.005 V.
Fig. 6. (a) Applied voltage. (b) Time history of nano-switch with L = 500 nm, shock = 300 g.
2334 S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339
4. Mechanical shock effects and modied voltage method
The pattern of shock force is assumed to be a half-sine shock pulse, which is expressed as
gt sin p
t T
0
T
sh
_ _
ut T
0
ut T
0
T
sh
; 9
where T
0
is the start time of shock, T
sh
is duration of shock and u(t) is the step (Heaviside) function. We assume that the shock
acts like a distributed load all over the beam and makes it move with acceleration. In order to calculate the applied force due
Fig. 7. (a) Modied stepped voltage. (b) Time history of nano-switch with L = 1000 nm, shock = 90 g (switch OFF). (c) Shock = 100 g (switch ON).
S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339 2335
Fig. 8. Time history of nano-switch with L = 1250 nm and shock = 10 g (switch ON).
Fig. 9. The effect of time shifting in switch with zero damping which results to violate switch. At right hand shocks with identical amplitudes but shift in
time (T
0
) and at left hand corresponding time response have been shown. (a) Maximum of shock and electrostatic forces may occur at the same time which
intensies the deection and triggers the switch (switch ON). (b) Maximum of shock may not occur at maximum of electrostatic forces (switch OFF).
Fig. 10. Variation of pull-in voltage vs. length of nanotube for different initial gaps. The arrow shows increment of the damping coefcient.
2336 S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339
to a known acceleration we should simply use the Newtons second law of motion to make a relation between acceleration
and force, and to evaluate the distributed load one should use the mass per unit length of the beam. Considering the mechan-
ical shock effect, transverse equation of motion of beam is
EI
@
4
w
@x
4
c
@w
@t
qA
@
2
w
@t
2

EA
2L
_
L
0
@w
@x
_ _
2
dx
_ _
@
2
w
@x
2
q
tot
q
sh
; 10
where q
sh
F
0
gt and F
0
indicates the amplitude of the shock.
Using the nondimensional variables we have:
@
4
w
@x
4

~
c
@w
@t

@
2
w
@t
2
j
1
_
1
0
@w
@x
_ _
2
dx
_ _
@
2
w
@x
2
j
2
q
tot
j
3
gt; 11
where:
j
1

Ar
2
2I
j
2

L
4
EIr
j
3

L
4
F
0
EIr
~
c
cL
4
EI
~
t
; 12
j
3
indicates that the length of the beam has a signicant function on the mechanical shock effect and the effect of shock
increases as the L increases and decreases as the stiffness of beam (EI) increases. As it is illustrated in Fig. 5, a very high accel-
eration (shock) is needed to excite the beam to pull-in (switch ON) state after it reaches its steady state, due to the high stiff-
ness of nanotube.
When voltage is applied in one step, there is a relatively large gap after nanobeam returns back to its steady state position
after passing its overshoot (maximum deection). This gap should be compensated by the mechanical shock to bring the
switch to pull-in state. Since the stiffness of nanotube is very high, very intense shocks must be exerted. This would be a
problem since we want the switch to be activated in lower rang of shocks (below 1000 g). In order to make the switch be
activated in lower shock amplitudes, the nanotube should be taken as close as possible to its pull-in state with out experi-
encing pull-in state. To this end, a step-by-step voltage applying has been introduced in this study. In this technique, voltage
levels are applied in different steps and in each step, a DC voltage is added to previous level after beam reaches its steady
state. Using this method, the beamcan be taken very close to the ground with out passing the pull-in state. Consequently, the
beam can be activated by lower rang of shocks. The modied stepped voltage and the responses of the nano-switch under
mechanical shock have been depicted in Figs. 68.
Since the objective of this work is studying and simulating the switch for different applications, the response of the sys-
tem has been investigated in different conditions. To have a better view, parameters affecting the system including geomet-
rical (length, gap) and physical (damping, shock amplitude) have been changed and the responses of the nano-switch were
obtained. As a signicant parameter, the length of the tube was changed and pull-in voltage and the maximum deection of
nanotube were calculated. Results show that the pull-in voltage varies dramatically as the length of tube changes while the
maximum deection remains almost constant. In addition, as the length of tube reduces the response (the deection) of
Fig. 11. Variation of pull-in voltage and tip displacement vs. damping coefcient (c) for different lengths of nanotubes.
S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339 2337
beam to mechanical shock decreases and bigger shocks are needed to activate the switch and this put limits for adjusting the
switch for lower shocks. As a result, longer tubes are better for lower shock (below 50 g) and shorter ones for higher shock
amplitudes (400 g).
The effect of damping coefcient has not been mentioned in previous studies or has been set to zero under the assump-
tion of working in vacuum [20,21]. However, ignoring damping does not seem rather logical, since the acting time (T
0
) of
shock is not known. The start time of shock is usually so very large comparing to beam oscillation period that the beam
would reach to its steady state. In addition, it should be considered that the applied voltage is DC and other forms of damping
act on the beam. Considering the damping is of importance since assuming zero damping alters the effect of mechanical
shock and corresponding voltage based on the acting time of shock and not its amplitude (Fig. 9). This is not desirable be-
cause the switch would show different responses for shocks with the same amplitude (F
0
) but different starting time (T
0
).
Considering the importance of damping, the effect of damping on pull-in voltage and time response of nano-switch was
studied. Fig. 10 indicates that, as the length of tube increases the pull-in voltage decreases signicantly, but for a specic
Fig. 12. Response of nano-switch with xed geometries for various shock amplitudes, L = 1250 nm. (a-1,2) Nine steps for 10 g shock, (a-1) shock = 8 g
(switch OFF), (a-2) shock = 10 g (switch ON). (b-1,2) Eight steps for 100 g shock, (b-1) shock = 95 g (switch OFF), (b-2) shock = 100 g (switch ON). (c-1,2)
Seven steps for 1000 g shock, (c-1) shock = 900 g (switch OFF), (c-2) shock = 1000 g (switch ON).
2338 S.E. Khadem et al. / Applied Mathematical Modelling 36 (2012) 23292339
length the pull-in voltages are not sensitive to damping coefcient and remain constant for different damping coefcients. As
a result, having the damping coefcient the pull-in voltage can be determined for a specic length.
In the next step, we have utilized the advantage of stepped voltage method to develop a nano-switch capable of covering
wide range of shocks (101000 g). Fig. 11 shows the effect of beamlength on the pull-in voltage and maximumtip deection.
In previous studies, different geometries have been used for different rang of shocks (longer beams for lower shocks). Using
presented stepped voltage method, we would be able to design a nano-switch with xed geometry but for different shock
amplitudes. This method is useful because it removes changing geometry for different rang of shocks. This could have dif-
ferent applications, for example, using these switches in airbags, one can adjust the sensitivity of airbags to different shock
amplitudes for different driving conditions.
When the switch has to be activated by lower shock amplitudes (<10 g) the tube has to be taken close enough to the
ground that permits weak shocks trigger the switch to pull-in state. This can be accomplished using four and ve steps. Here
nine steps have been used for 10 g shock. Simulations show that three rst steps should be used for rough adjustments and
positioning the tube in 0.350.45 of initial gap. Then, three second steps for moderate adjustment and bringing tube as far as
0.5 of initial gap. Finally, last steps can be utilized for ne adjustment and setting the switch for desired thresholds. For
example, last step(s) can be eliminated and/or modied for stronger shocks. As a result, the tube would be shifted a little
bit far from the ground and consequently higher shocks are required to activate the switch. For instance, here the nano-
switch has been designed in a way that eight steps are required to active the switch by 100 g shocks and seven steps for
1000 g shocks. Fig. 12 illustrates the steps and corresponding shock required to trigger the switch.
5. Summary and conclusion
The behavior of carbon nanotube-based switches under effect of shock was presented. We used beam theory to simulate
the nano-switch and results were in good agreement with MD, which validated our method. The effect of geometrical
parameters were investigated and results showed that pull-in voltage increases meaningfully as the length of nanotube de-
creases but remains almost constant as damping coefcient changes. Also, investigations showed that the start time of shock
(T
0
) will be effective if we ignore the damping and to avoid this, damping should be taken into account and shock should be
applied after switch reaches its steady state. The effect of mechanical shock found to be weak when the switch is under elec-
trostatic force with one-stepped voltage as the stiffness of carbon nanotubes is very high. In this case, the distance between
steady state position of nanotube and the ground electrode is not short enough when voltage is applied only in one step. This
problem was solved using multi-stepped voltage tuning which shortens the distance between steady state situation of nano-
beam and the ground as much as possible and intensies the effect of shock. Introducing this approach and by modifying last
steps of applied voltages, we presented a nano-switch with single geometry, which can be adjusted to be triggered by shocks
having different amplitudes. This would have useful applications including airbags and fall detectors and give you the capa-
bility of adjusting your switches for different trigger thresholds.
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