ADVANCE TECHNICAL INFORMATION

HiPerFETTM
Power MOSFETs

VDSS = 200 V
= 60 A
ID25

RDS(on) = 33 m

IXFH 60N20
IXFT 60N20

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt

Symbol

Test Conditions

VDSS

TJ = 25C to 150C

VDGR
VGS

trr 250 ns

Maximum Ratings
200

TJ = 25C to 150C; RGS = 1 M

200

Continuous

20

VGSM

Transient

30

ID25

TC = 25C

60

IDM

TC = 25C, pulse width limited by TJM

240

IAR

TC = 25C

60

EAR

TC = 25C

50

mJ

EAS
dv/dt

IS IDM, di/dt 100 A/s, VDD VDSS,

TJ 150C, RG = 2

PD

TC = 25C

2.5

V/ns

300

-55 to +150

150

Tstg

-55 to +150

300

TJ

1.6 mm (0.063 in) from case for 10 s

Md

Mounting torque

Weight

TO-247
TO-268

(TAB)

TO-268 ( IXFT) Case Style

G
S

TJM
TL

TO-247 AD (IXFH)

G = Gate
D
= Drain
S = Source TAB = Drain

1.13/10 Nm/lb.in.
6
4

g
g

Features
l
l
l

Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min.
typ.
max.

VDSS

VGS = 0 V, ID = 250A

200

VGS(th)

VDS = VGS, ID = 4 mA

2.0

IGSS

VGS = 20 VDC, VDS = 0

IDSS

VDS = VDSS
VGS = 0 V

RDS(on)

International standard packages

Low RDS (on)
Rated for unclamped Inductive load
switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification

Advantages

4.0

100

nA

TJ = 25C
TJ = 125C

25
1

A
mA

VGS = 10 V, ID = 0.5 ID25

Pulse test, t 300 s, duty cycle d 2 %

33

2001 IXYS All rights reserved

(TAB)

Easy to mount
Space savings
High power density

98845 (6/01)

IXFH 60N20
IXFT 60N20
Symbol

Test Conditions

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

gfs

VDS = 10 V; ID = 0.5 ID25, pulse test

30

40

5200

pF

880

pF

Crss

260

pF

td(on)

38

ns

Ciss
Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

tr

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

63

ns

td(off)

RG = 2.5 (External),

85

ns

26

ns

155

nC

38

nC

55

nC

tf
Qg(on)
Qgs

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

Qgd
RthJC
RthCK

0.42
(TO-247)

Source-Drain Diode

0.25

K/W

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

Symbol

Test Conditions

IS

VGS = 0 V

ISM

Repetitive; pulse width limited by TJM

VSD

IF = IS, VGS = 0 V,
Pulse test, t 300 s, duty cycle d 2 %

trr
QRM
IRM

K/W

IF = 25A, -di/dt = 100 A/s, VR = 50 V

60

240

1.5

250

ns
C
A

0.7
8

TO-247 AD (IXFH) Outline

Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain

Dim.

Millimeter
Min.
Max.

Inches
Min.
Max.

A
A1
A2

4.7
2.2
2.2

5.3
2.54
2.6

.185
.087
.059

.209
.102
.098

b
b1
b2

1.0
1.65
2.87

1.4
2.13
3.12

.040
.065
.113

.055
.084
.123

C
D
E

.4
20.80
15.75

.8
21.46
16.26

.016
.819
.610

.031
.845
.640

e
L
L1

5.20
19.81

5.72
20.32
4.50

0.205
.780

0.225
.800
.177

P
Q

3.55
5.89

3.65
6.40

.140
0.232

.144
0.252

R
S

4.32
6.15

5.49
BSC

.170
242

.216
BSC

TO-268 Outline

Terminals: 1 - Gate
3 - Source

2 - Drain
Tab - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592
4,850,072

4,881,106
4,931,844

5,017,508
5,034,796

5,049,961
5,063,307

5,187,117
5,237,481

5,486,715
5,381,025