Practice T1

EEL 3396

Spring 2004

Note due to the fact that we switch books from time to time, only study the problems that
apply to Streetman chapters 1-3. Hence omit diffusion for this test.
Name
Closed book, no notes.

PIN(4 digits)..

Note c= 3x108m/s, h=6.63x10-34 J-s, mo=9.11x10-31 kg, q=1.6x10-19 C, niSi=1.5x1010/cm3,

o=8.85x10-12 F/m, rSI=11.8, k=1.38x10-23 J/K, rSIO2=3.9, T=300K, 1 eV=1.6x10-19 J.
1. An IC circuit requires that we design a 50 n-type resistor in a p-type Si wafer. The
acceptor doping is 1014/cm3, the donor implant depth is 5m, the length of the resistor is
20 m, and the maximum width allowed is 15 m. Calculate the required donor density.
Assume n=1000cm2/Vs, p=300 cm2/Vs.

2. A silicon sample is doped with 10 14 donors/cm3 and 1014 acceptors/cm3 at level EA and
1015 acceptors/cm3 at level EB. Assume all dopants to be ionized at T=300K.
2a. Calculate no and po.
2b. Calculate EF with respect to Ei
2. A silicon sample is doped with 1018 donors/cm3 and 1014 acceptors/cm3. T=300K.
2a. Calculate no and po.
2b. Calculate EF with respect to Ei
Try-out test problems for test I in EEL 3396 Fall 2202
Prove that from an electrical point of view holes have an effective charge of +q.
Calculate the Fermi level position relative to Ei for a room temperature p-type silicon
device with p0= 2x1017/cm3. Express your answer in eV
2. A silicon sample is doped with 1015 donors/cm3.
2a. Calculate for T =100, 200, 300, and 400K the position of E F with respect to Ei
(answers in eV). Assume all donors to be ionized and neglect the temperature dependence
of Nc and Nv.
2b. Plot EF and Ei in the following energy versus temperature band diagram.