ELEC 310

Homework # 3

1. The drain characteristics of a short-channel MOSFET are shown below.

(a) Find the transconductance gm in S and the output resistance ro in k at

operating point A.
(b) Find the transconductance gm in S and the output resistance ro in k at
operating point B.
2. A two-port device is characterized by the following equations

I 1 = 10 e

V1
)
4

+ 20 (V2 3) 3

I 2 = 12 V1 V2

(a) Determine the quiescent currents I1 and I2 if V1Q = 0.5V and V2Q = 4V
(b) Determine the small- signal model of the device at the operating point defined
in part (a)

3. Problem E4.19 of Howe & Sodini. Note comment before exercise E4.1 in page
246 of Howe & Sodini.
See page 3-5 for this problem

4. (a) Determine the small- signal parameters of an NMOS transistor biased in the
triode region
(b) Compare the transconductance ( I DS / VGS ) of a transistor biased in the triode
region with one biased in saturation
(c) Use SPICE to plot the transconductance of the transistor below as VDS is
sweeped from 0V to 3V. Does it agree with your hand-calculated results from
parts (a) and (b)?

(W/L) = 10

1.8V

+
-

+
-

Vto = 0.8 V
n Cox = 60 A/V^2

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