2SC5287

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)

Application : Switching Regulator and General Purpose

100max

VCEO

550

IEBO

VEB=7V

100max

V(BR)CEO

5(Pulse10)

hFE

IC

IC=10mA

550min

VCE=4V, IC=1.8A

10 to 25

IB

2.5

VCE(sat)

IC=1.8A, IB=0.36A

0.5max

PC

80(Tc=25C)

VBE(sat)

IC=1.8A, IB=0.36A

1.2max

Tj

150

fT

VCE=12V, IE=0.35A

6typ

MHz

55 to +150

COB

VCB=10V, f=1MHz

50typ

pF

Tstg

VBB1
(V)

VBB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

250

139

1.8

10

0.27

0.9

0.7max

4.0max

0.5max

1.4

Weight : Approx 6.0g

a. Part No.
b. Lot No.

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)

I C V BE Temperature Characteristics (Typical)

400 mA

250 mA
3

150 mA
2

I B =50mA

1.0
V B E (sat)

0.5

0
0.03 0.05

0.1

0.5

25C

Switching T im e

55C
10

10

tf

0.5
t on
0.1
0.2

0.5

50

10

0.5

0.3

10

P c T a Derating

fin
ite
he

40

at
si
nk

0.1

0.1

Without Heatsink
Natural Cooling
IB2=1.0A
L=3mH
Duty:less than 1%

In

0.5

ith

60

Without Heatsink
Natural Cooling

20

0.05

0.05
100

Collector-Emitter Voltage V C E (V)

500

1000

80

0.5

100
Time t(ms)

10

134

Reverse Bias Safe Operating Area

Collecto r Cur rent I C (A)

1.0

Collector Current I C (A)

20

50

0.5

j-a t Characteristics

20

10

Base-Emittor Voltage V B E (V)

Safe Operating Area (Single Pulse)

0.03
10

t s tg

V C C 250V
I C :I B1 :I B 2 =1:0.15:0.5

Collector Current I C (A)

5 7

6
5

t on t s t g t f ( s)

125C

0.5

t on t stg t f I C Characteristics (Typical)

(V C E =4V)

0.1

Collector Current I C (A)

h FE I C Characteristics (Typical)

0.05

Collector-Emitter Voltage V C E (V)

5
4
0.02

V C E (sat)

j - a ( C/W)

Transient Thermal Resistance

I C /I B =5 Const.

Maxim um Power Dissi pation P C (W)

1.5

Collector Current I C (A)

Collector-Emitter Saturation Voltage V C E (s at) (V )

Base-Emitter Saturation Voltage V B E (s at) (V)

600mA

mA

4
Collector Current I C (A)

(V CE =4V)
0
70

D C Cur r ent Gai n h F E

0.65 +0.2
-0.1

5.450.1
B

IC
(A)

Collecto r Cur rent I C (A)

2
3

5.450.1

RL
()

40

3.20.1

1.05 +0.2
-0.1

VCC
(V)

2.00.1

Typical Switching Characteristics (Common Emitter)

I C V CE Characteristics (Typical)

4.80.2

20.0min

VEBO

15.60.4
9.6

1.8

Unit

VCB=800V

Symbol

5.00.2

Ratings

ICBO

2.0

Conditions

4.0

Unit

900

19.90.3

Ratings

VCBO

Symbol

External Dimensions MT-100(TO3P)

(Ta=25C)

4.0max

Electrical Characteristics

Absolute maximum ratings (Ta=25C)

0.03
50

Without Heatsink
100

500

Collector-Emitter Voltage V C E (V)

1000

3.5
0

25

50

75

100

125

Ambient Temperature Ta(C)

150