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3001 Elecs Summary
3001 Elecs Summary
3001 Elecs Summary
Hans Oersted
Michael Faraday
James Maxwell
Andre Ampere
Kamerlingh Onnes
Superconductivity
Faradays Law
Childs Law
Wiedmann-Franz
Law
Curies Law
Curie-Weiss Law
Ewings theory of
Ferromagnetism
Amperes Theorem
End Rule
south pole
Helix Rule
Unit Pole
A pole which when placed in air from a similar and equal pole
repels it with a force of 1/4pi newtons
Magnetic Pole
Magnetic Axis
Dia
Para
Ferro
10^-10 m
Diameter of atom
10^-15 to 10^-16
m
1.1 x 10^-8 cm
Permeance
Coercivity
Leakage Factor
Ratio of flux in iron to flux in air (iba iba yung tawag sa book at
sa coaching)
Intensity
Magnetism
Hysteresis
Ferrites
Air Gap
Keeper
Moving electrical
charge
Stationary Electrical
Charges
Uniform
Current Carrying
Wire Loop
North
revolution
Domain
Toroid
Hall effect
Edison effect
Wiegand effect
Wall Effect
Bridgman effect
Hydrogen
Germanium
Atomic Mass
Atomic Number
# of protons or # of electrons
72.6
28.09
# of protons
Copper
34n
Metallic bonding
Motor Action
Flux linkages
= flux x # of turns
Joule, Watt-sec,
KW-h
KW-h
Ion
Thermionic
emission
Amber
Plasma
Charged Gases
Exclusion Principle
Pauli Exclusion
Principle
Radio Freq
Ohms Law
Crystalline Solid
Amorphous
Permits mechanical
Clearance
Atomic Packing
Factor
Madelung Constant
Creepage
Aurora
Corona discharge
1.15 to 1.25
Astrionic
Air
Soft iron
Silicon steel
Unlimited
# of compounds in nature
Ohm-m
Siemens / Mhos
Siemens/m
SI for conductivity
Resistivity
Temperature
For Conductors
2 Wb/m^2
insulators
semiconductors
conductors
Temp coefficient
resistance
+ temp coef
- temp coef
Electrolytes, carbon
.0034
.0038
.0039
Almost 0
Silicon Carbibe
10x
Neutral
Dielectric constant
or
Specific Inductive
Capacity
Breakdown
Volatage
Magnetic
conductivity
1/(oo) = c2
1 and 10
Mica
Porcelain
Earphones
Motors
+ to -
Conventional Flow
- to +
Electron Flow
P true power
VAR
Q reactive power
VA
S apparent power
Power factor
Cos = P/S
Reactive factor
Sin = Q/S
Voltage
Magnification Factor
Current
Magnification Factor
Voltage Resonance
Series Resonance
Current Resonance
Parallel Resonace
Ionization Current
ELI
ICE
ELI by exactly 90
deg
Pure inductance
ICE by exactly 90
deg
Pure capacitance
RL
CHAPTER2
RC
Reactance = 0
0.707
Gang Capacitor
Trimmer Capacitor
55 ohm-cm
60 ohm-cm
55 ohm-cm
Leading or Lagging
Leading pf
Capacitive Load
Lagging pf
Inductive Load
Separation of the
half power points
Effective Value
Faradic current
Stray Capacitance
1.73
Triangular Wave
Peakiest waveform
Independent to
each other
Appliances have
different current
ratings
Sinusoidal
Square wave
Ideal Current
Source (parallel r)
Ideal Voltage
Source
(series r)
Ideal Ammeter
(in series to the
circuit)
R is 0
Ideal Voltmeter
(in // to the circuit)
R is infinite
Resonance Curve
Frequency VS Current
Reactance Chart
Internal Heating
Phase
3.7K
It has a varying
magnetic field
Exponential Law
Sinewaves
Joule
Breakdown Voltage
Blocks DC current
Capacitor
47 ohms
Electrolytic
capacitor
Variable Capacitor
Barium Strontium
Titanite Dielectric
Surge Voltage
Voltage
It has reactance in
radio freq circuits
Manganin
Temp coef
Rate at which
electrons pas a
given point
Q of 10
Means that the energy stored in the magnetic field of the coil is
10x the energy wasted in the resistance
770V
Anticapacitance
Switch
Bifilar Resistor
Alloy
Vpeak
Vrms
Maximum
capacitance
Thevenins Theorem
Phasor
8 e-
32 p+
More slowly
Intrinsic
semiconductor
Pure Semiconductor
Extrinsic
semiconductor
Doped semiconductor;
2 Ohm-cm = resistivity
2mV/C
Piecewise Linear
Model
Diffusion
Drift Current
Carrier Drift
Zener Breakdown
Avalanche
Breakdown
Avalance effect
Diffusion or Storage
CHAPTER3
Capacitance
Lifetime
Recombination
Transit time
Reverse recovery
time
Insulator
Compound Semicon
Increase electric
conductivity
Ptype semicon
Ntype semicon
Trivalent Atom
Acceptor Atom;
Boron, Indium, Gallium,
Pentavalent Atom
Donor Atom;
Phosphorus, Arsenic, Antimony, Bimsuth
N type
P Type
PN crystal
Dipole
Barrier Potential
Intensity of electric
field
Forward current
Reverse Breakdown
Voltage
Esaki Diode
Tunnel Diode;
Principal char is that it has negative resistance region;
Shocklet Diode
No depletion layer
Bulk resistance
VAristors
Varactor Diode
PIN diode
Bulk resistance
decreases in
semiconductors
High Resistance
Transition region
capacitance
LED
Equivalent to a optocoupler ;
Typical operating current is 10mA;
Voltage drop is 1.5V;
Constructed using Gallium Arsenide;
Gives light when FB
LAD
IR emitters
Solid state GaAs devices that emit a beam of radiant flux when
FB
Optocoupler
Second
approximation
Third approximation
Negative voltage
supplies
16.7 ms
8.33 ms
40.6%
81.2
MOSFET
Highest Zin;
Sometimes called Insulated Gate FET
FET
uA
Ohms
Resistance of a FB PN jxn
Derating Factor
Shown on a data sheet that tells how much you have to reduce
the power of a device
Dember Effect
Or Photodiffusion effect;
The creation of voltage in a conductor or semicon by
illumination of one surface
Bulk Effect
Skin Effect
Anotron Diode
BARITT Diode
Spacistor
Zener Diode
Voltage multiplier
Photoconductive
Cell
Or Photoresitive device
Emitter Resistor
Silicon
% Ripple
Ripple Voltage
= (rZ / (rZ+rS)) x V
Holes
Isotopes
Series Capacitors
Emitter Follower
Circuit
Ai is High;
input is in-phase with output;
Employs 100% negative feedback;
Used for impedance matching;
Equivalent to CC amplifier
BJT / transistors
FET
Transistors
Power Transistors
Power amplifiers
Input is DC
Oscillators
Ohmic
IGFET
CMOS
Saturation region
10uF
Qpoint /
OperatingPoint
Luminous Efficacy
Scale Current
RC coupling
Transformer
Coupling
1.12eV(Si) and
0.72eV(Ge)
From these conditions, it can be said that less # of electronhole pair will be generated in Si than in Ge
0.135 m2/V-s
Harold Black
Always points to N
and away from P
CE circuit
Conventional amplifier
Threshold Voltage
Turns on an enhancement-device
DMOSFET
EMOSFET
Heat dissipation
Collector Efficiency
Drift transistor
Has a high frequency cut off due to its low inherent internal
capacitance and low electron transit time
Poor frequency
response
Fission
Neutrino
EG => 5eV
EG = 1.1eV
EG => 0.67eV
Bound Electrons
25mV
Boltzman constant
VGS(OFF) = VGS(ON)
Beta
CE gain
= IC/IB
Alpha
CB gain
= IC/IE
CHAPTER4
Collector has reverse
bias
Gain-BW product
Logic probe
Logic analyzer
Oscillators
Biasing
AF transformer
fields
Amplitude Distortion
Or harmonic distortion
Frequency
RC coupling
Transformer coupling
DC coupling
Klystron Oscillator
Step Down
Transformer
Gives distorted
output
10Khz
Coupling Capacitor
Bigger
At least 2 transistors
Generator Output
level is kept constant
Relaxation oscillator
GPS
1/( 4(LC) )
The better!
Thin base
Darlington Pair
Independent
Feedback Networks
Positive Feedback
Employed by Oscillators;
Negative Feedback
Employed by amplifiers
Reduces distortion;
Reduces gain;
Increases BW of an amplifier;
The sacrifice factor is (1+A)
Feedback factor ()
Approx gain of an
amplifier with
negative feedback
(Af)
(A) in negative
feedback
= Av x Ai;
Main consideration in the output stage of an amplifier
Crossover network
Armstrong circuit
10uF
50uF
Re, re and
Zero
Increase Av
LC oscillator
RC Oscillator
Hartley Oscillator
Crystal Oscillator
Tuned Amplifier
Operated in Class C;
Low Output
High Q
Typical Q of a crystal
X axis
Y axis
+ temp coef
- temp coef
More battery
consumption
Buffer Amplifier
Hand capacitance
Ic becomes maximum
Maximum voltage
appears across
transistor
At minimum
AC load line
Power stage
DC
Sum of AC and DC
CMRR = infinity
To set up an
operating point
Collector Supply
Low
25%
amp
50%
RF amplifiers
Driver stage
1NPN, 1PNP
transistor
Complementary-symmetry amplifier
Increases Input
Impedance,
Decreases Output
Impedance
Decreases Input
Impedance,
Increases Output
Impedance
ID
AND gate
CHAPTER 6
DArsnoval
Wattmeter
Dynamometer
Most expensive;
Mainly used as wattmeter;
Can be used for AC or DC works
Permanent Magnet
Moving Coil
Instruments
Moving Iron
instruments
Induction watt-hr
meter
Watt-hour meter
Rest
Deflecting force
(for analog ins) Causes the moving system to deflect from its
zero position
Controlling force
(for analog ins) Ensures that the deflection of the pointer for
Damping and
Controlling Torques
Damping torque is
zero
Thermocouple
Thermistor
Never
Pulse width
Pulse delay
Period
CRT
Wheatstone Bridge
Potentiometer Bridge
Maxwell Bridge
Wien Bridge
Measures capacitance
Electrostatic
voltmeter
1V at 10mW
0.1nW to 10mW
0.1 to 100mW
0.1uW to 100mW
Horizontal Scale
Vertical Center
Vertical Scale
measurements.
Grid-dip meter
Milliamter
Multimeter
Kelvin electrostatic
meter
Negligible
Manganin
Aluminum
Zero adjust
DMM
Sensitivity
RSH
Lissajous Pattern
At half of full
At far right
Resolution
Rm = internal resistance
CHAPTER 7
Inductor
Cannot be fabricated in IC
To produce change in
output when an input
voltage equals a
reference voltage
OP-AMP
uA741C OP-AMP
Voltage follower
Summing Point in an
OP-AMP
Negative
Power BW
Less than 1W
2 mega ohms
555 timer
RC synthesis
Single-Stone
Monos / Lithos
SSI
Up to 9 gates
MSI
10 to 100 gates
LSI
VLSI
BIFET
Relaxation oscillator
Digital IC
Linear IC
We can use ____ and _____ if higher power ICs are needed.
Industrial IC
Commercial IC
DIP packaging
Low in cost;
Tiniest packaging known;
Ruggedly resists vibration
Lower cost;
High reliability;
Smaller in size
VCO
Av = Rc / 2Re
manufacturer
Packaging type
D, J, N
P,N
It has an inherent
current limiting
Flat response
Single RC circuit
Stray wiring
capacitance
1M transistors
Trip point
Virtual ground
Type of ground that appears at the inverting input of an OPAMP that used negative feedback
CCD (charge-coupled
Capacitor)
0.5 to 15GHz
Ground
Czochralsky Pulling
technique
Compensating
Capacitor