KTDDT08

K THUT IN IN T CHNG 8
257
CHNG 08
DIODEVCCMCHNGDNG
8.1.TNG QUAN V CHT BAN DN:
8.1.1.TM TT V CU TRC NGUYN T
Theo l thuyt c in, nguyn t l thnh phn
nh nht ca phn t cn duy tr c c tnh ca phn
t . Mu nguyn t theo Borh bao gm: nhn cha cc
ht mang in tch dng c gi l proton v cc ht
mang in tch m l electron chuyn ng trn cc qu o
bao quanh nhn. Vi cc nguyn t khc loi s lng
electron v proton trn mi nguyn t c gi tr khc nhau,
xem hnh H8.1.
Cc nguyn t c sp xp th t trn bng phn
loi tun hon tng ng vi nguyn t s (atomic
number). Nguyn t s c xc nh theo s lng proton
cha trong nhn. Trong iu kin bnh thng cc nguyn
t trng thi trung ha, mi nguyn t c s lng electron
v proton bng nhau.
HNH H 8.1
Cc in t chuyn ng trn cc tng qu o

quanh nhn vi cc khong cch khc nhau. Mi tng qu
o in t tng ng vi mc nng lng khc nhau. Qu o in t cng gn nhn in
t c mc nng lng thp v khi qu o cng xa nhn mc nng lng in t cao hn.
Trong nguyn t nhng qu o c ghp thnh
nhm trong cc bng nng lng (energy bands) c gi l
shell. Tng ng vi nguyn t chn trc s lng shells c
nh. Mi shell c s in t ti a c nh ti cc mc nng
lng cho php. Mc nng lng chnh lch gia cc qu
o trong cng mt shell phi nh hn mc nng lng
chnh lch gia hai shell k cn nhau. Cc shell c nh
s th t 1, 2 , 3 ..t trong nhn ra ngoi , xem hnh H 8.2.
Cc in t cng xa nhn c mc nng lng cng
cao nhng km lin kt cht vi nguyn t so vi cc in t
nm gn nhn. Lp shell nm ngoi cng c gi l
valence shell (lp v ha tr) v cc in t trong tng ny
c gi l in t ha tr. Cc in t ha tr tham gia vo cc
phn ng ha hc, kt ni trong cu trc vt liu cng nh cc
tnh cht v in ca vt liu.
Khi nguyn t hp thu nhit nng hay quang nng,
HNH H 8.2
nng lng ca cc in t gia tng. Cc in t ha tr c
kh nng nhy n tng qu o c mc nng lng cao hn trong shell ha tr. Khi cc
in t ha tr hp th nng lng ngoi thot khi lp shell ngoi cng ca nguyn t, by
gi nguyn t mang in tch dng do s lng proton by gi nhiu hn lng electron. Qu
trnh mt cc in t ha tr c gi l s ion ha v nguyn t by gi c gi l ion
dng. Cc in t ha tr thot ra khi nguyn t c gi l electron t do. Khi cc
electron ha tr mt nng lng v tr v tng qu o trn shell ngoi cng ca nguyn t
trung ha cho ta ion m.
Tng s lng in t ti a trn mt shell ca nguyn t c xc nh theo quan h:
Ne 2n2
(8.1)
Trong , l s th t ca shell tnh t trong nhn ra pha ngoi.

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009
258
8.1.2.CHT DN IN, CHT CCH IN V CHT BN DN:

Tt c vt liu c to thnh t cc nguyn t. Nhng
nguyn t ny c lin quan n c tnh in bao gm c tnh
dn in ca vt liu.
HNH H 8.3
Vi mc tiu kho st cc tnh cht in ca vt liu,

nguyn t c biu din bi cc in t ha tr v phn
li bao gm nhn v cc shell bn trong. Carbon l loi vt
liu c dng lm in tr c nguyn t bao gm 4 electrons
ha tr trn shell ha tr v 2 electron trn tng trong cng, nhn
bao gm 6 protons v 6 neutrons. Ta ni phn li (core) ca
nguyn t c tng in tch l +4 (do 6 protons v 2 electrons
to nn, xem hnh H8.3.
8.1.2.1.CHT DN IN (CONDUCTOR)
Cht dn in l vt liu cho php dng in i qua mt cch d dng. Cc cht dn in

rt tt l vt liu n nguyn t nh : ng, bc, vng , nhm. Nguyn t hnh thnh cc vt liu
ny l loi nguyn t ch c mt electron ha tr v electron ny d dng thot khi nguyn t
thnh electron t do. Nh vy vt dn l vt liu c kh nng cha nhiu electrons t do.
8.1.2.2.CHT CCH IN (INSULATOR)
Cht cch in l vt liu khng cho dng in i qua trong iu kin bnh thng ca mi
trng. Hu ht cht cch in l hp cht khng thuc dng vt liu n nguyn t. Cc in t
ha tr lin kt cht vi phn li ca nguyn t. Trong cht cch in rt him cc in t t do.
8.1.2.3.CHT BN IN (SEMICONDUCTOR)
Cht cch in l vt liu trung gian gia cht dn in v cht cch in. Cht bn dn
thun khng phi l cht dn in tt cng khng phi l cht cch in tt. Cht bn dn n
nguyn t thng thng bao gm: Si (Silicon) ; Ge (germanium); C (Carbon). Hp cht bn dn
nh l: Gallinium Asernide. Vi cc cht bn dn n nguyn t ta c c 4 in t ha tr
trn shell ha tr .
8.1.3.DY NNG LNG (ENERGY BANDS):
Vi shell ha tr ca
nguyn t biu din mc ca
dy nng lng dng km gi
cc in t ha tr trn shell
ha tr. Mc nng lng ny
c gi l dy ha tr (valence
band).
Khi cc in t hp thu
c nng lng that
khi shell ha tr tr thnh in
t t do v tip tc duy tr trng
thi ny trong dy nng lng
khc c gi l dy dn
(conduction band) xem hnh
H8.4. Khong chnh lch nng
HNH H 8.4
lng gia dy ha tr v dy
dn c gi l khe nng lng
(energy gap). Khi in t hp thu nng lng bng mc khe nng lng n dy dn,
in t di chuyn t do trong vt liu v khng lin kt vi bt k nguyn t no khc.
259
Trong hnh H8.4 trnh by gin phn b nng lng ca vt liu cho thy kt qu sau:
Vi cht cch in: khe nng lng rt rng, cc in t ha tr khng th nhy n dy
dn tr khi c thm cc iu kin ph hy trng thi nh trng hp t in p c gi tr rt cao
(cao p) ngang qua lp vt liu.
Vi cht bn dn khe nng lng hp hn so vi trng hp cht cch in. Khi khe
nng lng hp li vi in t ha tr c th nhy sang dy dn tr thnh cc in t t do.
Vi cht dn in cc dy ha tr v dy dn ph chng ln nhau, nh vy trong vt dn
c rt nhiu in t t do.
8.1.4.SO SNH CU TRC NGUYN T CA CHT DN IN V CHT BN DN:
Trong hnh H8.5
trnh by nguyn t
ca ng l cht
dn in v nguyn
t Silicon ca cht
bn dn.
Phn li ca
nguyn t Silicon c
in tch tng l +4
(14 ptotons v 10
electrons).
Phn li ca
nguyn t ng c
in tch tng l +1
(29 protons v 28
electrons).
HNH H 8.5
4 in t ha tr trn
lp shell ngoi cng
Phn li l vt
th loi tr cc
in t ha tr.
in t ha tr
trong nguyn t ng
cm nhn lc hp
dn do in tch +1
ca phn li nguyn
t, trong khi in t
ha tr trong nguyn
t Silicon cm nhn
lc hp dn do in
tch +4 t phn li
nguyn t. Ta ni lc
hp dn ln in t
HNH H 8.6
ha tr trong nguyn
t Silicon gp 4 ln
lc hp dn ln in t ha tr trong nguyn t ng. Hn na in t ha tr ca ng trn lp
shell th 4 v in t ha tr ca Silicon trn lp shell th 3, in t ha tr ca ng xa nhn hn
so vi in t ha tr ca Silicon nn nng lng ca in t ha tr ca nguyn t ng cao hn
so vi nng lng ca in t ha tr ca nguyn t silicon.T cc nhn xt trn cho thy in t
ha tr ca ng d dng hp thu nng lng nhy n dy dn thnh in t t do khi so
snh vi in t ha tr ca nguyn t Silicon.
Thc t ti iu kin nhit mi trng bnh thng bntrong ng c cha rt nhiu
in t t do.
260
8.1.5.SO SNH CU TRC NGUYN T CA CHT BN DN SILICON V GERMANIUM:

Trong hnh H8.6. trnh by cu trc nguyn t ca cc cht bn dn Silicon v Germanium.
Silicon l cht bn dn c s dng rng ri ch to cc linh kin: diode, transistor, mch tch
hp (IC intergrated circuit) . Cc nguyn t Silicon v Germanium c cng s lng in t ha
tr ( 4 in t ha tr).
Tuy nhin cc in t ha tr ca Germanium lp shell th 4 trong khi cc in t
ha tr ca Silicon lp shell th 3 gn nhn hn. iu ny cho thy kh nng hp thu nng
lng tr thnh in t t do ca cc in t ha tr trong nguyn t Germanium d
dng hn cc in t ha tr trong nguyn t Silicon. Do tnh cht ny Germanium thng
khng n nh ti nhit cao , y l l do c bn khin Silicon c dng rng ri hn .
8.1.6.NI CNG HA TR (COVALENT BONDS):
Khi cc nguyn t
t hp to thnh vt rn,
tinh th vt liu, chng t
sp xp theo m hnh i
xng. Cc nguyn t
trong cu trc tinh th ni
kt vi nhau bng ni
cng ha tr, kt ni ny
c hnh thnh do s
tng tc gia cc in
t ha tr trong cc
nguyn t. Silicon l loi
vt liu tinh th (crystalline
material). Trong hnh H8.7
trnh by cu trc ca tinh
th Silicon to bi cc
HNH H 8.7
nguyn t Silicon.
Mt nguyn t Silicon s chia x cc in
t ha tr vi 4 nguyn t Silicon khc ln cn
hnh thnh 4 ni cng ha tr.
Sau cng trn tng ngoi cng ca cc
nguyn t c 8 in t, t trng thi cn bng
ha hc. S chia x cc in t ha tr to thnh 4
ni cng ha tr c tnh cht lin kt cc nguyn t
vi nhau, tinh th thun nht (intrinsic crystal)
khng tp cht (no impurities) ca silicon to bi
ni cng ha tr trnh by trong hnh H.8.8. Tinh
th Germanium cng c kt cu tng t v c 4
in t ha tr trn lp shell ngoi cng.
HNH H8.8
8.1.8.TNH DN IN TRONG VT LIU BN DN:

Phng thc dn dng in qua vt liu l kin thc quan trng dng gii thch nguyn l
hot ng ca linh kin in t.
Nh trnh by, cc in t trong nguyn t ch c th thot ra trong v n nh trong cc
dy nng lng nh trc. Mi shell quanh nhn tng ng vi dy nng lng no v cch
bit vi cc shell khc ln cn bng cc khe nng lng.
Trong hnh H8.9 trnh by gin ca cc dy nng lng ca cc nguyn t trong tinh th silicon
thun khit khng c kch thch (khng c nng lng bn ngoi nh nh sng tc ng vo nguyn t).
261
iu kin ny ch xy ra ti nhit tuyt i 0o Kelvin.

8.1.8.1.TNH DN CA ELECTRONS V L TRNG:
Mt tinh th silicon thun khit ti nhit mi

trng c nhit nng vi in t ha tr nhy qua
khe nng lng t dy ha tr n dy dn tr
thnh in t t do. Cc in t t do c gi l cc
in t dn (conduction electrons). S kin ny c
trnh by trong gin nng lng (energy diagram)
v gin ni cng ha tr (bonding diagram) trong
hnh H8.10.
Khi in t nhy sang dy dn to s khim
khuyt trong dy ha tr ca tinh th. V tr khim
khuyt ny gi l l trng (hole). Vi mi in t hp
thu nng lng ngoi v nhy n dy dn s hnh
thnh l trng trong dy ha tr, ti lc ny ta c mt
cp in t v l trng, xem hnh H8.10.
HNH H8.9
HNH H8.10
Ti nhit bnh thng ca mi trng,

trong mt tinh th Silicon qu trnh hnh thnh
cp in t t do v l trng to ra mt cch
ngu nhin, xem hnh H8.11.
8.1.8.2.DNG IN TO BI CA ELECTRONS
V L TRNG:
Khi cp in p mt chiu ngang qua hai

u ca ca mt tm tinh th Silicon, xem
hnh H.8.12. , cc in t t do trong dy dn
s di chuyn t do mt cch ngu nhin trong
cu trc tinh th v d dng i v pha cc
dng (+) ca ngun p cung cp.
HNH H8.11
262
S chuyn ng ca cc
in t t do trong tinh th bn
dn hnh thnh mt loi dng
in qua cht bn dn c gi
l dng in to bi cc in t
(electron current).
Mt loi dng in khc
xut hin trong dy ha tr khi l
trng c sinh ra . Cc in t
HNH H8.12
cn li trong dy ha tr vn cn
lin kt vi cc nguyn t ca
chng v khng th di chuyn t do mt cch ngu nhin trong cu trc tinh th nh cc in t
t do. Tuy nhin, in t ha tr c th di chuyn n cc l trng ln cn vi s thay i rt t
nng lng ca n v to thnh l trng khc khi in t ha tr ny di chuyn. Nh vy l trng
xem nh di chuyn mt cch thc s t v tr ny sang v tr khc trong tinh th cht bn dn. S
di chuyn ca cc l trng hnh thnh dng in l trng ( holes current), xem hnh H..8.13.
in t ha tr di
chuyn n l
trng th 4 v
to l trng th 5
in t ha tr di
chuyn n l trng th
5 v to l trng th 6
in t ha tr di chuyn
n l trng th 2 v to
l trng th 3
in t ha tr di
chuyn n l trng th
3 v to l trng th 4
in t t
do ri l
trng trong
shell ha tr
in t ha tr di
chuyn n l
trng th 1 v
to l trng th 2
Khi in t ha tr di chuyn t tri sang phi lp y l trng v to ra l trng khc, th l trng xem nh di
chuyn ngc li t phi sang tri. Mi tn mu xm ch hng chuyn ng thc s ca cc l trng.
HNH H8.13
8.1.9.BN DN LOI N V BN DN LOI P:

Cc vt liu bn dn khng dn in tt v c gii hn ti trng thi thun khit, do s
lng rt t cc in t t do trong dy dn v l trng trong dy ha tr. Silicon thun khit (hay
germanium) phi c ci thin bng cch gia tng lng in t t do hay l trng gia tng
tnh dn to thnh cc linh kin in t hu ch.
Cng vic ny c thc hin bng cch thm tp cht vo vt liu thun khit. C hai loi
vt liu bn dn khng thun khit (extrinsic semiconductor) l bn dn loi n v bn dn loi p.
Tnh dn ca silicon v germanium c th c gia tng mt cch mnh m bng cch kim sot
tp cht thm vo vt liu bn dn thun khit. Phng thc ny gi l ph gia lm tng cc ht
ti : in t hay l trng.
263
8.1.9.1.BN DN LOI N:
gia tng lng in t trong dy dn

ca silicon thun khit, mt nguyn t c ha tr
5 c thm vo. Cc nguyn t c 5 in t
ha tr chng hn nh : As (arsenic); P
(phosphorus) ; Bi (bismuth) v Sb (antimony).
Trong hnh H8.14 trnh by lin kt cng
ha tr ca mt nguyn t Sb vi 4 nguyn t Si
ln cn. Bn in t ha tr ca Sb dng to ni
cng ha tr vi 4 nguyn t Si v mt in t
tha tch ly thnh in t t do khng lin kt
vi cc nguyn t. Nguyn t c ha tr 5 dng
lm tng in t t do c gi l nguyn t
cho (donor atom).
HNH H8.14
S lng in t t do c kim sot

bi s lng nguyn t tp cht thm vo.
HT TI A (MAJORITY CARRIERS) V HT TI THIU (MINORITY CARRIERS)
Phng php to ra cc in t t do theo phng thc ny khng hnh thnh l trng

trong dy ha tr. Bn dn to nn t Silicon (hay Germanium) lin kt vi nguyn t ha tr 5
c gi l bn dn loi n v dng ti c to nn do cc in t.
Trong trng hp ny cc in t c gi l ht ti a (majority carriers) trong bn dn
loi n. Mc d dng ti ch yu l do cc in t nhng cng c mt s l trng c to ra khi c
in t tha khi tng ha tr do tc dng nhit. Cc l trng ny khng c to thnh do s
thm vo cu trc nguyn t tp cht ha tr 5. L trng trong cht bn dn n c gi l ht ti
thiu (minority carriers).
8.1.9.2.BN DN LOI N:
gia tng lng l trng trong bn dn silicon

thun khit, mt nguyn t c ha tr 3 c thm vo.
Cc nguyn t c 3 in t ha tr chng hn nh : B
(boron); In (indium) v Ga (gallium).
Trong hnh H8.15 trnh by lin kt cng ha tr
ca mt nguyn t B vi 4 nguyn t Si ln cn. Ba
in t ha tr ca B dng to ni cng ha tr vi 4
nguyn t Si v thiu mt in t nn to thnh l
trng. Nguyn t c ha tr 3 c th ly thm mt in
t nn c gi l nguyn t nhn (acceptor atom).
S lng l trng c kim sot bi s lng
nguyn t tp cht thm vo v cc l trng c to
bi phng thc trn khng i cng vi in t t do.
HNH H8.15
HT TI A (MAJORITY CARRIERS) V HT TI THIU (MINORITY CARRIERS)
Dng in ti trong trng hp ny l do cc l trng, cht bn dn silicon (hay

germanium) lin kt vi nguyn t ha tri 3 cho bn dn loi p.
L trng c th hiu l in tch dng; v khi nguyn t thiu i mt in t, in tch ton
phn ca nguyn t mang gi tr dng. L trng xem l ht ti a trong bn dn loi p. Mc d
dng dn trong bn dn p ch yu l do cc l trng, nhng cng vn c mt s in t t do sinh
ra khi c s tc ng ngun nhit bn ngoi. Cc in t t do ny khng c to do s thm
vo tp cht l nguyn t ha tr 3. in t trong cht bn dn p l ht ti thiu.
264
8.2.DIODE:
8.2.1.NH NGHA V CU TO:
Bn dn p
Tip gip pn
Bn dn n
Khi to thnh mi ni pn gia khi bn

dn loi n v khi bn dn p ta c diode c bn.
Diode l linh kin bn dn ch cho php
dng in qua n theo mt hng nh trc.
Trong hnh H8.16 trnh by cu to c bn
ca mi ni pn, trong vng p c nhiu l trng
(ht ti a) v c vi in t t do (ht ti thiu)
sinh ra do tc dng nhit.
L trng
Trong vng n cha nhiu in t t do

(ht ti a) v mt s rt t l trng (hat ti thiu).
in t t do
HNH H8.16
Nh trnh by trong cc mc trn, bn dn loi p to nn t nguyn t silicon kt hp vi

tp cht l nguyn t c ha tr 3 nh boron. Cc l trng hnh thnh khi c cc ni cng ha tr
gia nguyn t boron v nguyn t silicon. Tuy nhin tng s proton v tng s in t bng nhau
trong vt liu; nn vt liu c tnh trung ha v in.
Tng t , bn dn loi n to nn t nguyn t silicon kt hp vi tp cht l nguyn t c
ha tr 5 nh antimony. Cc in t hnh thnh khi c cc ni cng ha tr gia mt nguyn t tp
cht vi bn nguyn t silicon. Tuy nhin tng s proton v tng s in t (bao gm cc in t
t do) bng nhau trong vt liu; nn vt liu c tnh trung ha v in.
8.2.2.VNG NGHO (DEPLETION REGION):
Vi cu to ca mi ni pn trong hnh H8.16, cc in t t do trong vng n di chuyn mt
cch ngu nhin theo mi hng. Khi to thnh mi ni pn, cc in t t do gn mi ni trong
vng n bt u khuch tn sang vng p, ti dy chng ti hp vi cc l trng gn mi ni, xem
hnh H.8.17.
Tip gip pn
Vng ngho (deplete region)
in th ro cn (Barrier Voltage)
a./ Ti lc hnh thnh mi ni pn, cc in t t

do trong vng n bt u khuch tn sang mi ni
v ti hp vi cc l trng nm gn mi ni trong
vng p
HNH H8.17
b./ Vi mi in t t o khuch tn sng mi ni v ti hp

vi l trng, in tch dng li trong vng n v in tch
m hnh thnh trong vng p. Cc in tch ny to thnh
in th ro cn. Tc ng ny din tin tip tc cho n khi
in th ro cn ngn c qu trnh khuch tn
HNH H8.18
265
Khi hnh thnh mi ni pn, vng n mt i in t khi khuch tn sang mi ni. S kin ny
sinh ra lp in tch dng gn mi ni.
Khi in t di chuyn sang mi ni, vng p s mt i cc l trng do s ti hp. S kin
ny sinh ra lp in tch m gn mi ni.
Hai lp in tch dng v m to thnh vng ngho (depletion region), xem hnh H8.17.
Danh t ngho c s dng cho vnbg gn tip gip pn do s thit ht cc ht ti ty thuc
vo qu trnh khuch tn ti mi ni. Cn nh rng, vng ngho hnh thnh rt nhanh v c dy
rt mng so vi dy ca cc lp bn dn p v n.
Qu trnh khuch tn chm dt khi vng ngho to thnh ro cn ngn cn cc in t i
qua mi ni.
8.2.3.IN TH RO CN (BARRIER POTENTIAL):
Ti bt k lc no c in tch dng v in tch m t gn nhau th c lc tng tc
gia cc in tch theo lut Coulomb. Trong vng ngho c nhiu in tch dng v in tch m
xp i din nhau ti tip gip pn. Lc tng tc gia cc in tch tri du hnh thnh in
trng, xem hnh H8.18 .
in trng ny c khuynh hng ngn cn cc in t t do trong vng n vt qua tip
gip pn v mc nng lng phi c dng n di chuyn in t qua khi vng ngho. Nh
vy cn cp nng lng ngoi in t di chuyn ngang qua vng c in trng ro cn trong
vng ngho.
in th chnh lch to bi in trng ngang qua vng ngho l lng in p cn thit
di chuyn in t t do qua kh in trng ro cn. in th chnh lch ny gi l in th
ro cn c tnh bng Volt. Ni mt cch khc,cn mt lng in p no bng in th ro
cn vc cc tnh tng ng c t ngang qua tip gip pn trc khi cc in t t do hnh
thnh dng ngang qua mi ni. Qu trnh ny c gi l phn cc.
in th ro cn ph thuc vo mt s cc h s bao gm loi vt liu bn dn, hm lng
tp cht v nhit . Vi Silicon in th ro cn c gi tr khong 0,7 V v vi Germanium in
th ro cn c gi tr khong 0,3 V ti nhit mi trng 25oC.
8.2.4.GIN NNG LNG TI MI NI PN V VNG NGHO
2
Ht ti thiu
Ht ti a
Dy dn
Dy dn
Dy
ho tr
Dy
ho tr
Ht ti a
Ht ti thiu
Vng ngho
a./ Ti lc hnh thnh tip gip pn
b./ Ti trng thi cn bng
HNH H8.19
Cc dy ha tr v dy dn trong vt liu n c cc mc nng lng hi thp hn so vi

mc nng lng ca cc dy ha tr v dy dn trong vt liu p. iu ny l do s khc bit tnh
cht nguyn t gia cc nguyn t tp cht ha tr 3 v ha tr 5 to nn. Gin phn b nng
lng ca mi ni pn trnh by trong hnh H8.19.
266
Cc in t t do trong cht n chon y vng trn ca dy dn ti mc nng lng

khuch tn d dng qua mi ni, cc in t ny khng cn tch ly thm nng lng. Sau khi
khuch tn qua mi ni, cc in t ny thi ra nhanh chng nng lng v ri vo cc l trng
trong vng p trn dy ha tr (xem hnh H8.19 a).
Khi s khuch tn din tin tip tc bt u to thnh vng ngho, mc nng lng ca
dy dn trong vt liu n gim dn. S gim thp mc nng lng trong dy dn trong vt liu n
ty thuc nng lng thi ra ca cc in t t do khi thc hin qu trnh ti hp khi chng
khuch tn sang vt liu p. Khi khng cn cc in t t do ri khi dy dn trong vng n sang
mi ni pn mc trn ca dy dn vng n v mc di ca dy dn vng p thng hng vi nhau.
Ti lc ny mi ni t trng thi cn bng v vng ngho c hnh thnh. Ngang qua vng
ngho c mt mc chnh lch nng lng tc ng mt i nng lng ( energy hill) ngn cn
cc in t t do tng vng n leo sang vng p.
Cn ch khi mc nng lng ca dy dn trong vng n h thp th mc nng lng ca
dy ha tr cng gim thp.
8.2.5.PHN CC DIODE:
8.2.5.1.PHN CC THUN:
Phn cc diode l cp in p mt chiu (DC) ngang

qua hai u diode.
Phn cc thun l s phn cc to iu kin thun li
cho dng i ngang qua mi ni pn. in p phn cc ngoi
c k hiu l VBIAS , cn ni tip diode vi in tr ngoi
gii hn dng c gi tr qu ln qua diode, c th lm hng
mi ni pn.
HNH H8.20
Khi phn cc thun, cn nh:

u () ca ngun p VBIAS ni n lp bn dn n ca diode .
u (+) ca ngun p VBIAS ni n lp bn dn p ca diode .
Gi tr ca in p VBIAS phi ln hn gi tr ca in th ro cn.
HNH H8.21
Hnh H8.21 trnh

by qu trnh hnh thnh
dng qua diode lc
phn cc thun. Qu
trnh ny c hnh
dung nh l qu trnh
y cc in t t do l
cc ht ti chnh t
vng n qua mi ni pn
n vng p. V ngun p
phn cc c cp lin
tc, duy tr dng in t
qua mch ngoi sau khi
qua vng p.
Nh trnh by trong cc mc trn, sau khi cc in t n vng p thi bt cc nng

lng v ri vo dy ha tr vng p, trong dy ny hin cc l trng l cc ht ti a. Lc ny qu
trnh ti hp s khng din ra v tc dng ca cc (+) ngun p VBIAS c khuynh hng tc ng
ko cc in t i v pha ngun. Cc l trng trong vng p to thnh mi trng hay ng dn
(path way) cc in t ha tr i ngang qua vng ny, in t t l trng ny sang l trng k
tip i n cc dng ca ngun p phn cc. Chng ta c th xem nh l trng lm thnh
phng tin cc in t i ngang qua vng p.
267
Khi cc in t qua khi vng p, cc in t tr thnh cc in t dn trong vt dn. Hn

na vi vt dn in do dy ha tr v dy dn nm chng ln nhau nn cc in t trong vt dn
tr thnh in t t do d dng hn so vi trng hp bn dn.
NH HNG CA S PHN CC THUN LN VNG NGHO
Khi c nhiu in t i ngang qua vng ngho, s lng ion dng gim xung, tng t
khi c nhiu l trng i ngang qua vng ngho s lng ion m gim xung. Qu trnh gim thp
cc ion dng v ion m trong vng ny lm thu hp vng ngho.
NH HNG CA S PHN CC THUN LN IN TH RO CN
Theo phn tch trn chnh cc ion dng v ion m trong vng ngho phn b hai pha mi
ni pn to thnh i nng lng ngn cn cc in t t do khuch tn sang mi ni ti trng
thi cn bng. i nng lng ny chnh l in th ro cn.
Khi phn cc thun, cc in t t do c cung cp nng lng do ngun p phn
cc ngoi vt qua in th ro cn leo qua i nng lng i ngang qua vng ngho. Nng
lng cn cung cp cho cc in t bng vi nng lng ca in th ro cn. Ni cch khc cc
in t nhn c nng lng ngoi bng vi in th ro cn v i qua vng ngho.
8.2.5.2.PHN CC NGHCH:
Phn cc nghch l iu kin cn thit ngn cn

dng in i qua diode. Trong hnh H8.22 trnh by
ngun DC cp vo diode theo trng thi to phn cc
nghch: u (+) ca p phn cc VBIAS c ni n
vng n ca diode v u () c ni n vng p ca
diode. Vng ngho s tng rng hn so vi trng thi
phn cc thun hay trng thi cn bng.
u (+) ca ngun p phn cc ko cc in t
HNH H8.22
t do l cc ht ti a trong vng n ra xa khi mi ni pn.
Khi cc in t di chuyn v pha u (+) ca ngun p s to ra cc ion dng trong vng ngho
m rng vng ngho lm gim cc ht ti a, xem hnh H8.23.
Trong vng p, cc
in t t u () ca
ngun p i vo nh l cc
in t ha tr di chuyn t
l trng ny n l trng
khc ln cn n vng
ngho to thnh cc ion m.
Hin tng ny lm m
rng vng ngho. Dng in
t ha tr c th xem tng
ng nh dng l trng
c ko v pha u ()
HNH H8.23:
ca ngun p phn cc.
Qu trnh qu ca cc ht ti din ra v kt thc trong khong thi gian rt ngn ngay
sau khi cp in p phn cc vo diode. Khi vng ngho m rng v gim nhanh cc ht ti a,
in trng to bi cc ion dng v ion m gia tng cho n khi to thnh in p ngang qua
vng ngho c gi tr bng in p phn cc.Ti lc ny dng qu chm dt v cho dng phn
cc ngc c gi tr rt b.
DNG PHN CC NGC
Dng in phn cc ngc c gi tr rt b xut hin ngay sau khi dng qua kt thc,
dng in ny c to nn do cc ht ti thiu trong vng n v p to ra, y l cc cp in t l
trng to ra do nh hng ca nhit .
268
Mt lng nh ca cc in t t do trong vng p c y n mi ni pn do tc dng

ca u () ca ngun p phn cc. n vng ngho cc in t thi ra nng lng v kt hp
vi cc ht ti thiu trong vng n nh cc in t ha tr v i n u (+) ca ngun p phn cc
to thnh dng l trng rt b.
V dy dn trong
vng p c mc nng
lng cao hn dy dn
trong vng n, do cc
in t l cc ht ti
thiu d dng i ngang
qua vng ngho vi chng
khng cn thm tch ly
thm nng lng. Dng
in ngc trong diode
khi phn cc ngc
c
trnh by trong
HNH H8.24:
hnh H8.24.
PH V PHN CC NGC (REVERSE BREAKDOWN)
Dng in phn cc nghch thng c gi tr rt nh v c th b qua. Mc d vy, khi
in p ngoi phn cc ngc c gia tng n gi tr c gi l in p ph v (breakdown
voltage), dng in ngc gia tng mt cch mnh lit.
Vi gi tr cao ca in p phn cc ngc mang n nng lng cho cc in t ti
thiu, lm tng tc cho chng i qua vng p va chm cc nguyn t vi mc nng lng ln
lm bt ra cc in t ha tr khi qu o trong dy dn. Cc in t ha tr b nh bt khi qu
o tng nhanh s lng, khi cc in t c mc nng lng cao qua c vng ngho chng c
nng lng n vng n nh cc in t dnv khng thc hin qu trnh ti hp vi l
trng. Qu trnh nhn cc in t dn nh va trnh by c gi l hin tng avalanche v
to ra dng in ngc c gi tr rt ln c th ph hy diode do qu trnh nhit tiu tn trong
diode tng qu mc.
8.2.6.C TUYN VOLT AMPERE CA DIODE:
8.2.6.1.C TUYN VOLT AMPERE KHI PHN CC THUN (FORWARD BIAS):
a./ in p phn cc thun thp VF < 0,7 V

dng in phn cc thun rt b.
b./ in p phn cc thun t n v duy tr VF = 0,7 V

Dng in phn cc tip tc gia tng khi p phn cc
VBIAS gia tng.
HNH H8.25
269
c tuyn Volt Ampere l th hay ng biu din m t quan h in p gia hai u

diode vi dng in qua diode. Thc hin mch th nghim theo hnh H8.25 xc nh c tuyn
Volt Ampere cho diode lc phn cc thun, gi:
VF : in p t ngang qua hai u diode lc phn cc thun.

VBIAS : in p phn cc cp vo mch diode.
IF : dng in qua diode lc phn cc thun.
Kt qu th nghim ghi nhn nh sau:
Khi VF 0 V khng c dng qua diode IF 0 A . Khi gia tng in p ngoi phn cc VBIAS
in p VF gia tng v dng phn cc thun IF gia tng dn.
Khi in p VBIAS n mc in p VF 0,7 V , xp x bng in th ro cn t ngang
qua vng ngho ca mi ni pn, dng in IF gia tng nhanh.
Khi tip thc gia tng in p VBIAS
, dng in IF cng gia tng nhng in p ngang qua
hai u diode hi gia tng trong phm vi 0,7 V .
IF
IF
VF
a./ c tuyn Volt Ampere lc
phn cc thun diode.
VF
b./ M rng c tuyn trong hnh a . in tr ng rd gim

dn gi tr khi im lm vic di chuyn ln pha trn
HNH H8.26: c tuyn Volt Ampere phn cc thun ca diode

8.2.6.2.IN TR NG (DYNAMIC RESISTANCE):
Khi m rng (hay khuch i) c tuyn Volt Ampere ca diode lc phn cc thun nh
trong hnh H8.26 b, in tr ng ca diode c nh ngha nh sau:
r 'd
VF
IF
(8.2)
in tr ng lc phn cc thun diode khng l hng s v c gi tr thay i dc theo

c tuyn. in tr ng cn c gi l in tr AC. Ch theo l thuyt ca linh kin bn dn
cc in tr ni bn trong cc linh kin in t c k hiu bng cc k t thng nh l r thay
v dng k hiu R. Gi tr in tr ng bt u gim trong vng khuu (knee) ca c tuyn v c
gi tr nh hn trn vng cao hn im khuu.
270
8.2.6.3.C TUYN VOLT AMPERE KHI PHN CC NGHCH (REVERSE BIAS):
Khi cp in p ngoi phn cc nghch ngang qua hai u diode, ta ch nhn c dng
in ngc IR c gi tr rt nh i ngang qua mi ni pn. Vi in p ngang qua diode l 0V s
khng to thnh dng in ngc IR 0 A .
Gia tng dn in p phn cc nghch, ta nhn
c dng in ngc rt b v in p ngc VR
t ngang qua hai u diode.
Khi in p phn cc nghch gia tng n mc
cao hn, p ngc VR t trn hai u diode t n
mc bng p ph v phn cc nghch VBR dng in
ngc gia tng rt nhanh.
Nu tip tc gia tng in p phn cc ngc,
dng in tip tc gia tng rt nhanh, nhng p ngc
trn diode ch hi gia tng so vi gi tr VBR . Trng thi
HNH H8.27: c tuyn Volt Ampere
phn cc nghch ca diode
ph v vi cc trng hp ngoi l khng l trng thi

lm vic bnh thng ca hu ht cc mi ni bn dn
pn.
c tuyn volt Ampere ca diode lc phn cc nghch trnh by trong hnh H8.27
8.2.6.4. C TUYN VOLT AMPERE CA DIODE:
c tuyn Volt Ampere tng

hp ca diode cho cc trng thi
phn cc thun v phn cc
nghch trnh by trong hnh H8.28.
Cn ch thang o dng IF tnh
theo [mA] ; trong khi thang o ca
dng IR Itnh theo [A].
NH HNG NHIT
Khi nhit gia tng, trn
c tuyn phn cc thun dng IF
gia tng khi xt ti in p VF nh
HNH H8.28: c tuyn Volt Ampere tng hp cc trng thi
phn cc thun v phn cc nghch ca diode
trc. Ngc li tg ng vi gi
tr dng phn cc thun IF chn
trc p phn cc thun VF gim.
in th ro cn gim thp gi tr khi nhit gia tng.

Vi c tuyn phn cc nghch khi nhit gia tng dng phn cc nghch IR gia tng.
S khc bit gia cc c tuyn Volt Ampere v ti 25oC v ti nhit cao hn trnh by
trong hnh H8.28.
iu quan trng cn nh, dng phn cc nghch trc khi xy ra hin tng ph v phn
cc nghch (breakdown) c gi tr rt thp khng ng k c th b qua.
271
8.2.6.5. PHNG TRNH C TUYN VOLT AMPERE CA DIODE THEO SCHOCKLEY:
Theo l thuyt Vt Liu Bn Dn, p dng hm xc sut theo Fermi-Dirac tin on

s trung ha in tch ta c c phng trnh tnh (khng thay i theo thi gian) ca
dng in qua mi ni pn ca diode xc nh theo William Bradford Schockley:
v.VD
iD Io . e T 1
(8.3)
Trong :
VT
kT
[V] , vi hng s Boltzmann k = 1,38.10-23 [J/oK] v T [oK] l nhit tuyt i
q
ti mi ni pn ca diode .
iD [A] : dng tc thi qua diode.
vD [V] : in p tc thi t ngang qua hai u diode.
q [C] : in tch ca electron (m in t); q = 1,6.10-19 C.
: hng s ti hn ( = 1 cho Ge v = 2 cho Si )

Io [A] : dng in bo ha ti trng thi phn cc nghch.
TH D 8.1:
Ti nhit mi trng 27oC xc nh gi tr p VT trong quan h (8.3).
GII
Ta c nhit tuyt i ng vi 27oC xc nh theo quan h:
T o K 273 o C
(8.4)
Nn:
T = 273 + 27 = 300oK
Suy ra:
VT
kT 1,38.10 23.300
258,75.10 4 V
q
1,6.10 19
Nh vy:
VT = 25,875 mV
Vi diode loi Si ta suy ra quan h sau
vD
.VT
vD
2.0,025875
19,3237.vD
Phng trnh c tuyn Volt Ampere ca diode Si ti nhit 27oC c vit li nh sau:
iD Io . e19,3237.vD 1
(8.5)
V e19,3237.vD 1 ta vit li dng gn ng cho quan h (8.5) nh sau:
iD Io . e19,3237.vD
(8.6)
Tng t quan h (8.3) c vit li theo dng gn ng nh sau:
iD Io .e
vD
.VT
(8.7)
T quan h (8.2) nh ngha cho in tr ng ca diode, da vo quan h (8.7) ta suy ra

biu thc xc nh in tr ng ca diode lc phn cc thun theo quan h sau:
r 'D
dvD
diD
(8.8)
272
Vit li quan h (8.7) theo dng sau:
i
vD .VT .Ln. D
Io
Suy ra:
r 'D
(8.9)
dvD .VT
diD
iD
(8.10)
Ti nhit mi trng 27oC (tng ng 300oK) quan h (8.10) c vit li nh sau:
r 'D
.0,0258
iD
(8.11)
Vi diode thuc loi Ge hng s ti hn = 1 , in tr ng ca diode Ge ti nhit

27oC c xc nh theo quan h:
r 'D Ge
0,026
iD
(8.12)
Tng t vi diode thuc loi Si hng s ti hn = 2 , in tr ng ca diode Si ti nhit

27oC c xc nh theo quan h:
r 'D Si
0,052
iD
(8.13)
8.3.CAC M HINH CUA DIODE:

Trong hnh
H8.29 trnh by
hnh dng ca
cc diode dng
trong thc t.
Mc tiu
chnh ca diode
dng thc hin
mch chnh lu.
A
HNH H8.29: Hnh dng ca mt s mu diode thc.
Vng n ca
mi
ni
pn
c gi l
cathod, k hiu
l K v vng n
c gi l
anod, k hiu l
A
8.3.1.M HNH DIODE L TNG:

M hnh diode l tng c xem tng ng nh kha in.
Khi diode phn cc thun, n tc ng nh kha in ng kn mch.
Khi diode phn cc nghch, n tc ng nh kha in lm h mch.
in th ro cn, in tr ng v dng in ngc c b qua khng xt n.
273
RLIMIT : in tr gii hn dng trong mch diode

Diode l tng
Diode l tng
a./ Phn cc thun diode
b./ Phn cc nghch diode
c./ c tuyn Volt Ampere

ca diode l tng
HNH H8.30
Trong hnh H8.30 trnh by c tuyn Volt Ampere ca diode l tng. Khi b qua in
th ro cn v in tr ng ca diode khi phn cc thun diode in p t ngang qua 2 u
diode l VF 0 V . Dng in phn cc thun c xc nh theo nh lut Ohm nh sau:
IF
VBIAS
(8.14)
RLIMIT
Khi b qua dng in ngc, IR 0 A , in p phn cc ngc bng gi tr p VBIAS.

M hnh diode l tng thng c p dng trong trng hp cn xc nh nguyn
tc hot ng ca mch in t (xc nh nh tnh) v cha cn quan tm n cc gi tr
chnh xc ca p v dng trong mch (cha cn thit xc nh nh lng mt cch chnh xc).
8.3.2.M HNH THC NGHIM CA DIODE:
M hnh thc nghim ca diode chnh l m hnh l tng ca diode c thm vo
in th ro cn.
Khi diode phn cc thun, n tc ng nh kha in ng kn mch. Trong trng
thi ny mch tng ng bao gm kha in ni tip vi ngun p ro cn VF 0,7 V . in p
ny duy tr gi tr trong sut qu trnh phn cc thun
Khi diode phn cc nghch, n tc ng nh kha in lm h mch. in th ro
cn khng nh hng trng thi phn cc nghch.
in tr ng v dng in ngc c b qua khng xt n.
Diode thc nghim
Diode thc nghim

ca diode thc nghim
HNH H8.31
274
Dng phn cc thun xc nh theo inh lut K2 nh sau, xem hnh H8.31 a:
VBIAS VF RLIMIT .IF

Suy ra:
IF
VBIAS VF
(8.15)
RLIMIT
Dng in ngc qua diode l IR 0 A , in p phn cc ngc bng gi tr p VBIAS.

8.3.3.M HNH HON CHNH CA DIODE:
Diode hon chnh
Diode hon chnh
dc ph
thuc vo
gi tr in
tr thun
Dng in ngc
nh ty thuc vo
in tr ngc c
gi tr ln

ca diode hon chnh
HNH H8.32
M hnh hon chnh ca diode bo gm: m hnh ca diode l tng thm vo in

th ro cn, in tr ng phn cc thun c gi tr nh r 'd v in tr ni phn cc nghch
r 'R c gi tr ln.
Khi diode phn cc thun, n tc ng nh kha in ng kn mch. Trong trng
thi ny mch tng ng bao gm kha in ni tip vi ngun p ro cn 0,7 V v ni tip vi
in tr ng r 'd .
Khi diode phn cc nghch, n tc ng nh kha in h mch, u song song vi
in tr ni phn cc nghch r 'R . in th ro cn khng nh hng trng thi phn cc nghch.
c tuyn Volt Ampere ca diode hon chnh trnh by trong hnh H8.32c.
in p xut hin ngang qua hai u diode lc phn cc thun xc nh theo quan h sau:
VF 0,7 V r 'd .IF
(8.16)
Dng qua diode ti trng thi phn cc thun xc nh theo quan h:
IF
VBIAS 0,7 V
RLIMIT r 'd
(8.17)
Dng in ngc ti trng thi diode phn cc nghch :
IR
VBIAS
RLIMIT r 'R
(8.18)
275
TH D 8.2:
a./ Xc nh in p v dng
phn cc thun qua diode trong
hnh H8.33a. Suy ra p t
ngang qua hai u in tr hn
dng RLIMIT. Gi s in tr
ng ca diode r 'd 10 ti
dng phn cc thun ca diode
cn tm.
HNH H8.33
b./ Tm p v dng phn cc ngc ca diode trong hnh H8.33b theo tng dqng mu ca diode.
Suy ra in p t ngang qua hai u in tr RLIMIT . Gi s dng phn cc ngc IR 1 A
GII:
a./ Vi mu diode l tng:
VF 0 V
IF
VR
LIMIT
VBIAS
RLIMIT
10 V
10 mA
1k
IF RLIMIT 10 mA 1k 10 V
Vi mu thc nghim ca diode
VF 0,7 V
IF
VR
LIMIT
VBIAS VR
RLIMIT
10 V 0,7 V
9,3mA
1k
IF RLIMIT 9,3mA 1k 9,3 V
Vi mu diode hon chnh
IF
VBIAS 0,7
RLIMIT r 'd
10 V 0,7 V
9,3 V
0,00921 A 9,21mA
1k 10 1010
9,21mA 1k 9,21V
VF 0,7 V r 'd .IF 0,7 V 10 9,21mA 792 mV

VR
LIMIT
IF RLIMIT
a./ Vi mu diode l tng:
IR 0 A
VR VBIAS 5 V
VR
0V
VR VBIAS 5 V
VR
0V
LIMIT
Vi mu thc nghim ca diode
IR 0 A
LIMIT
Vi mu diode hon chnh
IR 1A
VR
LIMIT
IR RLIMIT 1A 1k 1mV
VR VBIAS VR
LIMIT
5 V 1mV 4,999 V
276
8.4.CHINH LU BAN KY (HALF-WAVE RECTIFIERS) :

Do kh nng dn dng theo mt hng v khng dn dng theo hng ngc li, cc
diode c dng trong cc mch chnh lu bin i p AC thnh p DC. Mch chnh lu c tm
thy trong cc b ngun DC hot ng khi c cp ngun AC. B ngun cung cp l b phn
cn thit cho h thng mch in t n gin cng nh phc tp.
8.4.1.B NGUN DC C BN:
B ngun DC bin i ngun p xoay chiu 220 V 50 Hz ca ngun li 1 pha sang
ngun p DC c gi tr n nh. S khi c bn ca mch chnh lu v b ngun hon chnh
trnh by trong hnh H8.34.
Ngun p 1 pha 220V - 50Hz
in p ca chnh lu bn k
Chnh Lu
RECTIFIER
MCH CHNH LU BN K
Ngun p 1 pha 220V - 50Hz
Chnh Lu
RECTIFIER
in p chnh lu c lc phng
B lc
FILTER
in p c n p
Mch n p
REGULATOR
S KHI CA B NGUN DC HON CHNH: CHNH LU, LC V N NH IN P
HNH H8.34: S khi ca mch chnh lu v b ngun cung cp c lc phng v n nh in p
Trong s khi ca b ngun DC hon chnh, b lc c cng dng kh i s nhp nh

ca in p in p sau khi chnh lu nhn c tn hiu p ng ra tng i phng hn.
B n p c cng dng duy tr khng i gi tr p DC ra khi in p ngun thay i hay
khi ti thay i gi tr. B n p c th l linh kin n hay cc mch in t tch hp phc tp ty
thuc vo ln ca dng ti hay phm vi bin thin in p ca ngun AC cung cp.
277
8.4.2.MCH CHNH LU BN K:
Trong hnh H8.35, trnh
by mch in bao gm: ngun
p xoay chiu hnh sin, 1 diode v
1 in tr ti RL to thnh mch
chnh lu bn k.
a./ Trong sut bn k dng ca p vo xoay chiu, p ng ra c dng
ging nh p xoay chiu cp vo. Dng i qua dioode v quay v ngun
Cn ch trong mch ti
cc v tr v theo k hiu ni t l
cc nt chun ng th vi nhau,
ti cc v tr ny c in th l 0V.
p ngun Vin cp n
ng vo mch chnh lu c dng
sin, khi Vin 0 V (tng ng bn
b./ Trong sut bn k m ca p vo xoay chiu, dng qua diode bng

0A nn p ng ra mch chnh lu cng bng 0 V
c./ p chnh lu bn k trn ng ra, v trong 3 chu k ca p vo
HNH H8.35: Hot ng mch chnh lu bn k vi diode l tng.
k dng) diode phn cc thun

v cho dng i qua in tr ti.
Dng in ny hnh thnh p trn
ti RL c cng dng vi p Vin .
khi Vin 0 V (tng ng
bn k m) diode phn cc
nghch khng cho dng i qua
nn p trn ti bng 0V.
Tm li p trn ti ng dng vi p Vin bn k dng v bng 0V khi Vin xut hin

bn k m.
8.4.3.GI TR TRUNG BNH CA P CHNH LU BN K:
Vi tn hiu hnh sin cp vo mch chnh
lu bn k c dng tc thi:
v(t) Vmax sin t V

in p tc thi trn in tr ti c
xc nh theo quan h sau:
HNH H8.36:
t 0
khi 0 t
khi t 2
vout t Vmax .sin t

vout
(8.19)
Gi VP l in p nh ca tn hiu p chnh lu, ta c : VP Vmax

Gi VAVG l in p trung bnh ca p chnh lu, gi tr ny c o trc tip bng Volt k
mt chiu (hay bng my o VOM thang o Volt DC). Theo ton hc ta c nh ngha ca p
trung bnh nh sau:
VAVG
1 T
v t .dt
T 0
(8.20)
Trong T l chu k ca hm v(t).

278
Vi p chnh lu trn ng ra c dng (8.19), gi tr trung bnh xc nh theo quan h sau:
VAVG
0
Vm
1
cos t
V
sin
t
.d
t
2 0 m
2
Thu gn, ta c:
VAVG
Vm
Vp
(8.21)
Gi VRMS l gi tr hiu dng ca p cp vo mch chnh lu, quan h (8.21) c vit li

theo dng sau:
VAVG
VRMS 2
0,45.VRMS
(8.22)
TH D 8.3:
Cho mch chnh lu bn k vi in tr ti RL 24 v p tc thi ng vo l:
v t 12 2.sin 100.t V . Khi xem nh diode l l tng, xc nh nh p, dng trung bnh

v cng sut mt chiu PDC trn ti.
GII
p hiu dng ng vo mch chnh lu l: VRMS 12 V .

p trung bnh trn ti c xc nh theo quan h (8.22):
VAVG 0,45.VRMS 0,45.12 5,4 V

Dng trung bnh qua ti c xc nh theo nh lut Ohm:
IAVG
VAVG
RL
5,4
0,225 A 225 mA
24
Cng sut mt chiu tiu th trn ti:
PDC VAVG.IAVG 5,4 0,225 1,215 W

8.4.5.NH HNG CA IN TH RO CN LN TN HIU RA CA MCH CHNH LU:
Khi p dng m hnh thc nghim ca diode vi in th ro cn l 0,7 V. Trong sut
bn k dng ca p ng vo diode s phn cc thun khi vin t 0,7V . iu ny dn n

in p nh ca p trn ng ra chnh lu s thp hn gi tr p nh ca p ng vo l 0,7 V.
nh hng ca in th ro cn trn p ng ra mch chnh lu c xt n khi bin
ca p ng vo mch chnh lu c gi tr thp. Trong mt s ti liu khi bin ca p ng vo
nh hn 10V ta cn ch n n nh hng trn.
Trong trng hp tn hiu c bin ln hn, nh hng ca in th ro cn c
b qua, xem nh diode chnh lu l l tng.
TH D 8.4:
Cho mch chnh lu bn k vi p ng vo c dng sin tn s 50 Hz, bin l 5V, xem
hnh H8.37. Xc nh p ng ra ca mch chnh lu.
279
GII
Khi p dng m hnh thc nghim ca
diode, p dng nh lut K2 ta c phng trnh
cn bng p nh sau:
vin t VF 0,7V vL t
Trong 0,7V l in th ro cn v
VF l in p t ngang qua hai u diode, vi

diode l l tng. Tm li quan h xc nh p
tc thi trn ti c dng sau:
HNH H8.37
vL t vin t VF 0,7 V
Khi diode phncc thun VF 0 v p vo tc thi c dng v t 5.sin 100.t V p

tc thi trn ng ra c dng:
vL t 5 sin 100.t 0,7 V
Cc dng p tc thi vin t v vL t c trnh by trong hnh H8.38 nh sau:
p trn ng ra
mch chnh lu
p vo mch
chnh lu
HNH H8.38: p tc thi ng vo v ng ra mch chnh lu khi xt n nh hng ca in th ro cn.
280
8.4.6.IN P NGC NH TRN DIODE (PIV - PEAK INVERSE VOLTAGE):

in p ngc nh l gi tr ti a ca in p ngc t ln hai u diode lc phn
cc nghch. Gi tr ny bng vi bin ca p sin trn ng vo ca mch chnh lu.
K hiu cho in p ngc nh l PIV, gi s p tc thi trn ng vo mch chnh lu c
dng vin t Vm .sin t V , ta c:
PIV Vm
(8.23)
8.4.7.CHNH LU BN K PHI HP VI BIN P CCH LY GIM P:

My bin p 1 pha vi dy qun
s v th cp c lp cn c gi l
bin p cch ly hay bin p 1 pha hai
dy qun.
V1
V2
Ngun p xoay chiu c cp

vo s cp ca bin p, p xoay chiu
trn th cp bin p c cp vo
mch chnh lu, xem hnh H8.39.
Khi s dng phi hp bin p vi
mch chnh lu, chng ta c c cc
li im nh sau:
HNH H8.39
C th iu chnh tng hay gim in p cp vo mch chnh lu.

Ngun p xoay chiu c cch ly vi mch chnh lu m bo c cc s c nguy him
trn pha th cp bin p.
Cc thng s tnh ton cho mch chnh lu trong trng hp ny thc hin theo cc ni dung
trn, tuy nhin cn ch thm thng s t s bin p phi hp cc gi tr tnh ton. Vi cc
mch chnh lu c cng sut thp, trong cc trng hp tnh ton ta gi thit bin p 1 pha c
hiu sut 100 % (bin p l tng); p th cp lc khng ti v khi mang ti xem nh khng thay
i gi tr. Vi nhng bi ton thc t cn phi hp kin thc ca my bin p hiu chnh cc
gi tr tnh ton c bit l trong cc trng hp mch chnh lu c cng sut ln.
TH D 8.4:
Cho mch chnh lu bn
k lp ti th cp ca my bin
p 1 pha c t s bin p v p
ng vo s cp theo hnh
H8.40. Gi s khng quan
tm n thay i p th
cp khi mang ti, xc nh cc
thng s ca ti trn ng ra
ca mch chnh lu.
HNH H8.40
GII
Theo gi thit ta c t s bin p l : Kba
E1
E2
Bin p ng vo bin p :
V1m 156 V
Bin p ng ra th cp:
V2m
V1m
Kba
V1dm
V2dm
2
2
1
156
78 V
2
281
V2m
78
24,83 V
24,83 V
24,83mA
1K
in p trung bnh trn ti:
VAVG
Dng trung bnh qua ti:
IAVG
Cng sut DC tiu th trn ti:
PDC VAVG IAVG 24,83 0,02483 0,616 W
in p ngc nh trn diode:
PIV V2m 78 V
VAVG
RL
8.5.CHINH LU TOAN KY (FULL- WAVE RECTIFIERS) :

8.5.1.TNG QUAN:
Mc d chnh lu bn k cng c mt s ng dng nhng chnh lu ton k (chnh lu hai
bn k) thng c s dng nhiu hn trong cc b ngun DC. Chnh lu ton k c hai dng:
chnh lu dng hai diode phi hp my bin p c im gia v chnh lu cu Graetz.
Chnh lu ton k cho php dng in qua ti ch theo duy nht mt hng trong sut
chu k ca p ng vo hnh sin, trong khi chnh lu bn k ch cho dng qua ti theo hng
nh trc ch trong bn k dng ca in p ng vo chnh lu.
Mch chnh lu ton k cho p ng ra c tn s cao hn 2 ln tn s ca p ng vo.
CHNH LU
TON K
HNH H8.41
Vi p xoay chiu vin (t) Vmax sin t V sin cp vo mch chnh lu ton k cho p tc
thi trn in tr ti c xc nh theo quan h sau, xem hnh H8.41:
vout (t) Vmax sin t V
0 t
vi chu k T 2
(8.24)
p dng quan h (8.20) gi tr trung bnh p trn ng ra chnh lu ton k l:
VAVG
0
Vm
2V
1
cos t m
V
sin
t
.d
t
0 m

Hay:
VAVG
2Vm
(8.25)
Tng t gi VRMS l p hiu dng ca p ng vo ta vit li quan h (8.25) nh sau:
VAVG
2 2.VRMS
0,9.VRMS
(8.26)
282
8.5.2.CHNH LU TON K DNG 2 DIODE V MY BIN P C IM GIA:

My bin p c im
gia l my bin p 1 pha
cch ly, dy qun s v th
cp c lp nhau; dy qun
th cp c 3 u ra dy : a,n
v b . S vng dy qun t a
n n bng s vng dy qun
t n n b.
im n l trung im
ca on ab, cc b dy an
v nb c cng chiu qun.
Mch chnh lu ton
k dng 2 diode phi hp vi
bin p c im gia trnh by
trong hnh H8.42.
v an t
a
n
vbn t
-n
vL t
HNH H8.42
Gi p tc thi pha th cp bin p l: v 2 t v ab t V2m .sin t V in p tc thi

ca cc on dy qun an v nb c xc nh nh sau:
v an t vnb t
v2 t
2
sin t
2
2m
(8.27)
Suy ra:
V
vbn t vnb t 2m sin t
2
(8.28)
NGUYN L HOT NG
Ti bn k
dng ca p cp vo
s cp bin p , vi
cc tnh ca cc b
dy s v th cp theo
hnh H8.43, p th cp
a
n
v ab t cng xy ra bn
b
n
a./ Trong sut bn k dng, D1 phn cc thun v D2 phn cc nghch.
th ny ln lt t ln
cc u A v K ca cc
diode D1 v D2. Ta rt
ra nhn xt sau:
a
n
v a vn D1 dan
b
n
b./ Trong sut bn k m, D1 phn cc nghch v D2 phn cc thun.
HNH H8.43
k dng . Ni khc
hn in th ti cc
im a, n v b c gi tr
tng ng nh sau:
vb vn v a . Cc in
vn vb D2 ngng dan
Nh vy dng in t a
qua D1 n ti RL v
theo n v th cp.
283
in p trn ti trong sut giai on diode D1 dn l bn k dng ca p v an t
Ti bn k m ca p cp vo s cp bin p , p th cp v ab t cng xy ra bn k m.
Ni khc hn in th ti cc im a, n v b c gi tr tng ng ti lc ny l: vb vn v a . Ta
v a vn D1 ngng dan v vn vb D2 dan . Nh vy dng in t b qua
rt ra nhn xt sau:
D2 n ti RL v theo n v th cp.
t din ra bn k m th p v t ang
in p trn ti trong sut giai on diode D2 dn l bn k dng ca p vbn t . Ch
v cc p v an t v vbn t o pha nhau, nn lc v an
bn
din ra bn k dng.
Vi qu trnh hot ng va trrnh by, ta c th thy mch chnh lu ton ky dng 2
diode xem tng ng hai mch chnh lu bn k vn hnh lch pha nhau 180o theo thi gian.
Mi na b dy th cp ch hot ng trong mi bn k ca p cp vo s cp bin p.
Nguyn l hot ng ca mch chnh lu ton k va trnh by gi thit cc diode
l l tng. Trng hp p dng m hnh thc nghim ca diode; cc diode ch bt u dn
khi cc p ti th cp: v an t hay vbn t
c gi tr ln hn in th ro cn 0,7V; phng php
tnh ton c thc hin tng t nh trng hp chnh lu bn k.

P NGC NH TC DNG LN DIODE LC NGNG DN:
Trong hnh H8.43 lc diode D2 ngng dn, ta c phng trnh cn bng p sau:
vnb t vL t vR t
(8.29)
D2
Trong vL t l p tc thi t ngang qua hai u ti RL.

Tng t lc diode D1 ngng dn, ta c phng trnh cn bng p sau:
vna t vL t vR t
(8.30)
D1
T cc quan h (8.29) v (8.30) gi tr in p ngc nh tc ng ln mi diode lc

ngng dn xc nh theo quan h sau:
PIV
D1
PIV
D2
V
2. 2m V2m
2
(8.31)
Quan h (8.31) xc nh theo m hnh diode l tng. Trong trng hp xt theo m
hnh thc nghim ca diode bin ca p vL t nh hn bin ca cc p vnb t
vna t mt gi tr bng in th ro cn 0,7V; ti lc ny ta c:

PIV
D1
PIV
D2
V
2. 2m 0,7 V V2m 0,7 V
2
(8.32)
TH D 8.5:
Cho mch chnh lu ton k dng 2 diode v bin p c im gia pha th cp, vi in
p xoay chiu cp vo s cp v t s bin p nh trong hnh H8.44. Xc nh:
a./ p v dng trung bnh trn ti, cng sut DC tiu th trn ti khi xem cc diode l l tng.
b./ p ngc nh tc ng ln cc diode lc phn cc nghch.
284
GII
Bin p s cp: V1m 100 V
p hiu dng s cp:
V1
V1m
2
100
2
50 2 V
T s bin p : Kba
HNH H8.44
V2
p hiu dng th cp bin p:
V1
Kba
Khi xem diode l tng, p cc i trn ti l: VL max

p trung bnh trn ti:
VAVG
IAVG
E1
E2
V1
V2
50 2
25 2 35,36 V
2
V2 . 2
2
2.VL max
25 2 . 2
25 V
2
2 25
15,915 V
V
15,916 V
AVG
1,59 mA
RL
10 k
PDC VAVG.IAVG 15,915 V 1,59 mA 25,33 mW
p ngc nh tc ng trn mi diode lc phn cc nghch:
PIV V2m V2 2 25 2 2 50 V
Nu p dng m hnh thc nghim, p ngc nh xc nh theo quan h sau:
PIV V2m 0,7V 49,3 V

8.5.3.CHNH LU TON K DNG MCH CU DIODE (CU GRAETZ) :
Gi p tc thi s cp bin p
a
n
l: v1 t V1m .sin t V v p
tc thi pha th cp bin p l:
v 2 t v ab t V2m .sin t V .
b
a./ Trong bn k dng, diode D1 v D2 dn, diode D3 v D4 ngng dn
a
c
n
b
b./ Trong bn k m, diode D1 v D2 ngng dn, diode D3 v D4 dn
Ti bn k dng ca p
th cp , ta c in th ti cc nt
a v b l: Va Vc Vn Vb suy ra
diode D1 v D2 phn cc thun, hay
cc diode D1 v D2 dn v cc
diodeD3 v D4 ngng dn.
Dng in t nt a th cp
qua diode D1 n c qua ti n n
qua diode D2 n nt b quay v th
cp, xem hnh H8.45. Ta c phng
trnh cn bng lc ny l:
HNH H8.45
285
v 2 t v ac vL t vnb VF
Trong , vL t
D1
vL t VF
(8.33)
D2
l p tc thi t ngang qua hai u ti, VF
D1
v VF
D2
l cc in p t
ngang 2 u mi diode lc phn cc thun.

Vi m hnh diode l tng, quan h (8.33) vit li l:
vL t v 2 t
(8.34)
Tm li ti bn k dng ca p th cp , p trn ti cng dng vi p th cp bin p.

Vi m hnh thc nghim ca diode quan h (8.33) vit li l:
vL t v2 t 2 0,7 V v 2 t 1,4 V
(8.35)
Ti bn k m ca p th cp , ta c in th ti cc nt a v b l: Va Vc Vn Vb suy ra
diode D1 v D2 phn cc nghch v cc diode D3 v D4 dn.
Dng in t nt b th cp qua diode D4 n c qua ti n n qua diode D3 n nt a quay
v th cp, xem hnh H8.45. Ti lc ny dng qua ti khng i hng khi so vi trng hp
phn tch trn.
v 2 t vbc vL t vna VF
Trong , vL t
D4
vL t VF
l p tc thi t ngang qua hai u ti, VF
(8.36)
D3
D3
v VF
D4
l cc in p t
ngang 2 u mi diode lc phn cc thun.

Vi m hnh diode l tng, quan h (8.36) vit li l:
vL t v 2 t
(8.37)
Tm li ti bn k dng ca p th cp , p trn ti cng dng vi p th cp bin p.

Vi m hnh thc nghim ca diode quan h (8.36) vit li l:
vL t v2 t 2 0,7 V v 2 t 1,4 V
(8.38)
Vi cc quan h (8.37) v (8.38) cho thy khi ti bn k m in p trn ti vn c gi tr
dng, ni khc hn dng p trn ti lun mang gi tr dng khi p v 2 t
din ra bn k
dng ln bn k m.
P NGC NH TC DNG LN MI DIODE LC DIODE NGNG DN:
Ti bn k dng ca p th cp , ta c in th ti cc nt a v b l: Va Vc Vn Vb .
Lc cc diodeD3 v D4 ngng dn ta c phng trnh cn bng p nh sau:
(8.39)
(8.40)
v an VR
D3
VF
D1
vL t
vCB VR
D4
VF
D2
vL t
V:
Vi m hnh diode l tng in p trn cc diode khi phn cc thun c gi tr l 0V, t

cc quan h (8.39) v (8. 40) suy ra p ngc t ln cc diode ang phn cc nghch l:
VR
D3
VR
D4
vL t
max
v2 t
max
V2m
(8.41)
286
Vi m hnh thc nghim ca diode in p trn cc diode khi phn cc thun c gi tr l

0,7V ; p ngc t ln cc diode ang phn cc nghch l:
VR
D3
VR
D4
vL t
max
0,7V
(8.42)
(8.43)
Th (8.35) vo (8.42) suy ra:
PIV VR
D3
VR
D4
v2 t
max
1,4 0,7 V2m 0,7V
Tng t ti bn k m ca p th cp, in th ti cc nt a v b l: Va Vc Vn Vb .
Lc cc diode D1 v D2 phn cc nghch ta c cc phng trnh cn bng p nh sau:
(8.44)
(8.45)
vca VR
D1
VF
D3
vL t
vbn VR
D2
VF
D4
vL t
V:
Vi m hnh diode l tng in p trn cc diode khi phn cc thun c gi tr l 0V, t

cc quan h (8.44) v (8. 45) suy ra p ngc t ln cc diode ang phn cc nghch l:
VR
D3
VR
D4
vL t
max
v2 t
max
V2m
(8.46)
Vi m hnh thc nghim ca diode in p trn cc diode khi phn cc thun c gi tr l

0,7V ; p ngc t ln cc diode ang phn cc nghch l:
VR
D3
VR
D4
vL t
max
0,7V
(8.47)
Th (8.38) vo (8.47) suy ra:
PIV VR
D3
VR
D4
v2 t
max
1,4 0,7 V2m 0,7V (8.48)
TH D 8.6:
Cho mch chnh lu ton k
dng mch cu vi m hnh
diode l tng; bit p hiu dng
th cp bin p l V2 12 V .
V2
Xc nh :
VL
a./ p v dng trung bnh, cng

sut tiu th trn ti.
b./ p ngc tc ng ln mi
diode trong s cu khi p
dng m hnh thc nghim diode
HNH H8.46
GII
Bin p th cp: V2m 12 2 V 16,97 V
Khi xem diode l tng , p trung bnh trn ti: VAVG 0,9 V2 0,9 12 10,8 V
IAVG
VAVG
RL
10,8 V
1,08 mA
10 k
PDC VAVG.IAVG 10,8 V 1,08 mA 11,66 mW
287
p ngc nh tc ng trn mi diode l tng lc phn cc nghch :
PIV V2m 16,97 V

Nu p dng m hnh thc nghim, p ngc nh xc nh theo quan h sau:
PIV V2m 0,7V 16,97 0,7 16,27 V

Dng tn hiu p tc thi ti th cp bin p v trn ti trnh by trong hnh H8.47.
VAVG
p trn ti
vL t
p tc thi
v2 t
ti th
cp bin p
HNH H8.47: p tc thi trn ti v ti th cp bin p khi p dng m hnh thc nghim ca diode.
8.6. MACH LOC (FILTER):

Vi b ngun DC l tng, yu cu kh nhp nh trn p ng ra t cc mch chnh
lu bn k hay ton k c quan tm n t c p DC trn ng ra ca b ngun c
dng hon ton phng. Trong trng hp ny chng ta cn dng cc mch lc, v cc mch in
t cn c cung cp p v dng DC phng n nh cung cp cng sut v phn cc cho cc
linh kin in t khc hot ng theo yu cu ring.
Mch lc n gin ch bao gm t in. Trong trng hp mun n nh mt cch tuyt
i p DC trn ng ra , cn s dng thm mch tch hp (IC) n nh in p . S khi tng
qut ca b ngun trnh by trong hnh H8.34.
8.6.1.NGUYN L HOT NG CA MCH LC:
Trong hnh H8.48 trnh by mch chnh lu bn k phi hp vi b lc t in trc khi
cp n ti.
Trong sut bn k dng ca in p xoay chiu vin t Vm .sin t
cp vo mch
chnh lu, diode phn cc thun cho php t lc np in trong phm vi 0,7V vin t Vin max .
288
Gi p t ngang qua hai
u t C l vC t ; khi p vo t
n gi tr nh vin t Vm p
trn t l vC t Vm 0,7V (khi

a./ Khi diode phn cc thun, t bt u np in tch v tng dn in p
b./ Khi p vo t n gi tr cc i, diode b phn cc nghch ngng dn.

T phng in qua in tr ti RL
c./ Khi gi tr tc thi p vo cao hn p VC, diode phn cc thun tr li.

T np in tr li
HNH H8.48
p dng m hnh thc nghim

ca diode). Cn ch trong
khong thi gian ny, p tc
thi trn ti v p tc thi trn
t hon ton ging nhau.
Sau khi t n mc nh
p vo bt u gim thp gi tr
( na giai on cn li trong
bn k dng). By gi p trn
t C cao hn p vo, diode b
phn cc ngc; t ngng np
in. V t u song song vi
in tr ti, in tch ang tch
trn cc cc dng ca t s i
qua ti n cc m ca t
trung ha cc in tch cc m;
qu trnh ny c gi l qu
trnh phng in ca t. Thi
gian phng in nhanh hay chm
ph thuc vo gi tr in dung C
v tr s in tr ti RL.
Ti bn k m ca p vo, nu t cha x ht in tch trn cc bn cc, p trn t ln

hn p vo nn diode vn tip tc phn cc nghch. T tip tc duy tr qu trnh phng in.
Khi p vo bt u bn k dng k tip diode tip tc phn cc nghch ; khi p vo
tc thi ln hn p tc thi trn t C 0,7V t chm dt qu trnh phng in v diode bt u
phn cc thun. Qu trnh np in tch cho t tip din.
8.6.2. P TC THI TRN TI KHI CHNH LU TON K C MCH LC T :
Vi mch chnh lu ton k c mch lc t
in, nguyn l hot ng c gii thch tng t
nh trng hp chnh lu bn k. Cho mch chnh
lu dng cu diode theo hnh H8.49.
Ti bn k dng ca p vo v1 t gi s t
cha np in tch ban u, cc diode D1 v D2
dn cp dng np in tch cho t v ng thi cp
dng qua ti R1. Trong khong thi gian ny p
trn hai u ti cng l p trn hai u t C1 ; in
p ny c dng ging nh in p v1 t (khi xem

HNH H8.49
cc diode D1 v D3 l l tng). Nu p dng m

hnh thc nghim ca diode , p trn ti v t c
dng ging nh p v 1 t 1,4V .
Xem hnh H8.50, on t gc ta n a.

289
vC t
c
a
T np in
T phng in
v1 t
HNH H8.50
Ti v tr a, p vo v1 t t cc i v ang trn gim bin , lc p ngang qua hai
u t v ti t n gi tr V1m 1,4V . Trong V1m l bin p v1 t . By gi cc diode D1

v D2 phn cc ngch. T C1 bt u phng in sang ti tr R1, in p trn hai u ti by gi
c xc nh theo quan h (8.51) sau y. Ti lc t bt u phng in, xt mt li cha t v
in tr ti ta c quan h:
vC t R1.ip t
(8.49)
Vi dng phng in ip t xc nh theo quan h nh sau:
ip t C1
dvC t
(8.50)
dt
Suy ra:
vC t R1C1.
dvC t
dt
(8.51)
Gii phng trnh vi phn bc nht ta c nghim nh sau:
vC
K.e
t
R1C1
(8.52)
Ti lc t bt u phng in, t thi im ban u ng vi t = 0 p ang c trn t l
V1m 1,4V , ta suy ra hng s K c gi tr nh sau:
K V1m 1,4V
(8.53)
290
T (8.52) v (8.53), suy ra p tc thi trong khong thi gian t phng in, giai on t a
n b l:
vC t (V1m 1,4).e
t
R1C1
(8.54)
Ti b, in p v1 t bn k m nhng v diode D3 v D4 trng thi phn cc thun

v bt u dn cp p n ti v t C1. T lc bt u np in tch tr li dng in p trn ti
c dng ca in p ngun v 1 t 1,4V . Giai on ny xy ra trong khong t b n c.
Ti c cc diode D2 v D3 b phn cc nghch v t C phng in qua t nh qu trnh

din ra trong khong thi gian t a n b. Qu trnh tip tc din tin c tnh cht tun hon qua
cc giai on nh va trnh by.
8.6.3. H S NHP NH IN P TRN TI :
Qua cc ni dung phn tch trn, tn
hiu trn ti ca mch chnh lu c dng
phng hn khi dng thm mch lc. Ty
thuc vo gi tr in dung ca t lc phm
vi chnh lch gia gi tr p cao nht v
thp nht trn ti s thay i. Khong
chnh lch gia mc thp nht v cao
nht trn p ti gi l nhp nh
(Ripple). Gi : r l h s nhp nh.
nhp nh (Ripple)
nhp nh (Ripple)
Vrpp l phm vi chnh lch gia mc

cao nht v thp nht ca p trn ti.
VP l p nh hay gi tr cao nht ca p
trn ti.
HNH H8.51: nhp nh trn p ti
VAVG l p trung bnh hay p DC trn ti
Vrpp
VP
VAVG
HNH H8.52: nh ngha h s nhp nh trn p ti.
Theo ton hc vi p trn ti l vL t c tnh tun hon. Ta c th khai trin p vL t theo
Fourier. Lc vL t c xem nh tng hp t nhiu p hnh sin thnh phn khc tn s v
bin . Tn s ca tn hiu sin thnh phn bng tn s vi p vL t gi l tn s c bn v cc

tn hiu sin thnh phn khc c tn s cao hn c gi l sng bc cao.
Theo phng php ny h s nhp nh c gi xc nh theo quan h sau
Gia tr hieu dung cua cac thanh phan xoay chieu

VAVG
(8.55)
291
Mch lc c cht lng cng cao, p trn ng ra ra cng phng . Gi tr ca h s

nhp nh ph thuc vo gi tr in tr ti RL v in dung C ca t lc. Tng ng vi mi
gi tr in tr ti v nhp nh nh trc, ta c mt gi tr in dung C tng ng.
Ni khc i, vi tr s in dung ca t lc chn trc, khi ti thay i gi tr h s
nhp nh thay i theo gi tr in tr ti. C nhiu ti liu trnh by cc phng php xc nh
in dung t lc theo h s nhp nh chn trc, ta kho st mt phng php n gin nh sau.
PHNG PHP TNH :
Khi p dng phng php ny, chng ta gi s:

Diode chnh lu l l tng, b qua nh hng in th ro cn khi diode dn thun.
Dng p trn ti ng dng vi p ng vo chnh lu bn k dng.
p tc thi ng vo chnh lu ton k l: vin t Vin max .sin t V .

Dng p trn t v ti khi dng mch lc t c dng rng ca tam gic thay v c dng t
hp hm sin v hm m i vi thi gian tha cc gi thit trn trnh by trong hnh H8.53.
vL t vC t Vin max .e
t
RL .C
Vrpp
VP Vin max
VL min
HNH H8.53: Xc nh biu thc tnh h s nhp nh.
Trong , UDCVrpp : khong chnh lch p trn ti gia mc cao nht n thp nht.
Qu trnh tnh ton c trnh by nh sau:
in tch Qnp trn t trong cc qu trnh diode chnh lu dn.
Qnap Vrpp.C
(8.56)
Lng in tch Qphng c x trong qu trnh cc diode ngng dn.
Qphong Iph .tdis
(8.57)
p dng nh lut bo ton in tch, in lng np v phng bng nhau; suy ra:
Vrpp.C Iph .tdis
(8.58)
Gi VP Vin max l gi tr nh ca p chnh lu cng chnh l mc p ti a t c trong

qu trnh np in tch, gi tdis l khong thi gian t x in tch qua ti, gi tr p trn t t c
cui qu trnh x in tch l VL min . Khi h s nhp nh r c gi tr cng thp, p nhp nh Vrpp
tin ti 0, thi gian tdis tin ti gi tr T (khong thi gian ca chu trnh np v phng in ca t),
292
VL min tin ti gi tr Vin max . Khi in p trn ti c lc phng, vi h s nhp nh trn ti thp
hn 10% v Tnp<< Tphng ta c tdis T . Quan h (8.58) c vit li nh sau:
Vrpp.C Iph .T
(8.59)
Khi tn hiu lc phng, dng Iph l dng phng in ca t qua ti cng chnh l dng trung
bnh qua ti, do :
Iph
VAVG
(8.60)
RL
T cc quan h (8.59) v (8.60) ta suy ra:
Vrpp
VAVG
T
RL .C
(8.61)
Mun xc nh mt cch n gin gi tr hiu dng ca cc thnh phn xoay chiu cha
trong khai trin Fourier ca p vL t
chng ta xem gn ng vL t
c dng p rng ca . Di
trc ta sao cho trc honh trng vi mc p trung bnh VAVG . Gi tr hiu dng ca thnh phn
t l dng p v t sau khi di trc.
xoay chiu vL t l gi tr hiu dng ca p hin c sau khi thc hin php di trc. Trong hnh
H8.54 , p vLAC
vLAC t
Vrpp
Vrpp
Vrpp
T1
T
sau khi di n h trc mi vi trc honh trng vi mc p V
HNH H8.54: p vL t
AVG
p tc thi vLAC t trong hnh H8.54 c xc nh nh sau:
V
T
vLAC t rpp . t 1
T
2
1
Vrpp
V
t T1 rpp
vLAC t
TT
2
1
(0 t T1)
(8.62)
(T1 t T)
Gi VLAC l p hiu dng ca vLAC t ta c:
V
LAC
2
2
T1
1 T
1 Vrpp T1
vLAC t .dt
t .dt Vrpp
T 0
T T1 0
2
1 t T
1
T1 2 T T .dt
1
Hay:
LAC
293
1
J J2
T 1
Trong :
1 V
J1 rpp
T T1
V:
J2
rpp
T1
(8.63)
2
T
t 1 .dt
2
(8.64)
1 t T
T1 2 T T1 .dt
1
(8.65)
Thc hin cc php tnh v thu gn ta c kt qu sau:
LAC
Suy ra:
VLAC
1T
1 . Vrpp
T 12
V
2
rpp
Vrpp
T T1

12
12
Vrpp
(8.66)
2 3
Tm li:
VLAC
VAVG
1 Vrpp
2 3 VAVG
(8.67)
H s nhp nh c xc nh theo quan h sau khi th (8.61) vo (8.67):
VLAC
VAVG
1 T
2 3 RL .C
(8.68)
Gi f l tn s ngun p cp vo chnh lu, i vi chnh lu ton k thi gian T trong

quan h (8.68) ch bng na chu k ca ngun p sin cp vo mch chnh lu. Trong trng
hp chnh lu bn k thi gian T trong quan h (8.68) bng chu k ca ngun p sin cp vo
mch chnh lu. T ta suy ra cc quan h sau:
Chnh lu ton k r
Chnh lu bn k r
(8.69)
4 3.f.RL .C
VLAC
VAVG
1
2 3.f.RL .C
(8.70)
p DC trn ti c xc nh theo quan h sau:
VAVG Vin max
Vrpp
2
(8.71)
Thay th (8.61) vo (8.71) ta c quan h sau:
VAVG Vin max
1 T.VAVG
2 RL .C
(8.72)
294
Suy ra:
T
VAVG. 1
Vin max
2.R
.C
L
Hay:
(8.73)
VAVG. 1 r 3 Vin max

Tm li:
VAVG
Vin max
1 r 3
(8.74)
TH D 8.7:
Cho mch chnh lu ton k
nh trong hnh H8.54, ti RL 20 .
V2
V1 110 V / 50Hz
Mun p trn ti t h s nhp nh

yu cu ryc 3,5% tnh in dung C
ca t lc. Suy ra cc thng s dng p
DC trn ti
HNH H8.54
GII
u tin xc nh cc s liu cho trong th d:
p hiu dng pha s cp bin p : V1 110 V .
Khi b qua thay i p th cp khi mang ti, p hiu dng pha th cp l:
V2
V1
Kba
110
11V
10
Chnh lu dng cu diode, chnh lu ton k. Tn s ngun p cp vo chnh lu l: 50Hz.

H s nhp nh yu cu l ryc 3,5% .
p dng quan h (8.69), ta c: r
Suy ra:
1
4 3.50.20.0,035
1
4 3.f.RL .C
F hay

ryc
hay
1
4 3.f.RL .ryc
C 4123,93 F
Chn gi tr in dung C ph hp gi tr thc t. Ta chn C 4700 F .

Tnh li h s nhp nh vi gi tr in dung ca t lc va chn.
1
4 3.50.20.4700.106
0,0307
in p DC trn ti:
VAVG
Vin max
1 r 3
V2 max
1 r 3
11. 2
1 0,0307 3
14,77 V
295
8.7.DIODE ZENER:
8.7.1.TNG QUAN:
p dng chnh ca diode Zener dng n nh in p to thnh ngun
p tham chiu n nh dng trong b ngun, volt k hay cc thit b o lng.
Diode Zener c kh nng duy tr c in p DC gn nh khng i trong cc
iu kin hot ng ring. Tuy nhin vic p dng diode zener c gii hn v cn
tha cc iu kin ring. K hiu ca diode Zener trnh by trong hnh H8.55.
HNH H8.55
Diode Zener l linh kin bn dn loi Silicon c mi ni pn c thit k hot ng vng

phn cc nghch. in th ph v phn cc nghch ca diode Zener c chnh mt cch cn
thn bng cch kim sot mc ca cc ht ti trong qu trnh sn xut.
Nh bit, trn c tuyn phn cc nghch ca diode khi gn t n mc ph v phn
cc nghch, in p trn diode c duy tr hu nh khng i ngay khi dng in phn cc
nghch thay i mt cch t ngt. Trong hnh H8.56 trnh by cc vng hot ng bnh thng
(c t mu xm) ca cc loi diode chnh lu v diode Zener. Diode Zener khi c phn cc
thun hot ng nh diode chnh lu thng thng.
Vng phn
cc thun
Vng phn
cc nghch
Vng phn
cc nghch
a./ Cc vng hot ng bnh thng ca diode chnh lu
b./ Vng hot ng bnh thng ca diode Zener
HNH H8.56: c tuyn Volt Ampere tng qut ca diode thng v diode Zener.
PH V PHN CC NGHCH ZENER:
C hai loi ph v phn cc nghch trong diode Zener l: hin tng thc v zener.
Qu trnh thc (avalanche breakdown) c trnh by trong mc 8.2.5.2 xy ra trong
cc loi diode chnh lu cng nh diode zener khi cp p ngoi phn cc nghch c gi tr ln.
Hin tng ph hy phn cc nghch Zener xy ra trong diode Zener lc phn cc nghch
vi in p phn cc nghch c gi tr thp. Diode Zener c ch to vi mc p ph v trng
thi phn cc nghch c gi tr thp, vng ngho trong diode zener rt hp ch l mt lp mng.
Gi tr in p ph v phn cc nghch mc thp gi l in p Zener, k hiu l VZ .
Tm li vi cc diode Zener c mc p ph v phn cc nghch t 5V tr xung, in p ny
c gi l VZ p Zener; vi cc diode Zener c in p ph v phn cc nghch cao hn 5V (c
th ln n 200V) c gi l p ph v pphn cc nghch VBR .
Sai s ca cc p: VZ v VBR t 1% n 2 %.
296
C TUYN VOLT AMPERE PHN CC NGHCH CA DIODE ZENER:
Dng Zener ti
im khuu
Dng Zener
th nghim
Dng Zener
cc i
HNH H8.57: c tuyn Volt Ampere phn cc nghch

Ca diode Zener.
Trong hnh H8.57 trnh by vng

phn cc nghch trn c tuyn volt
ampere ca diode Zener. Khi p phn
cc nghch VR gia tng, dng phn cc
nghch IR duy tr gi tr rt thp cho n
im khuu trn c tuyn. Dng in
phn cc ngc cn c gi l dng
Zener IZ .
Ti ngay im bt u xy ra
qu trnh ph v phn cc ngc, in
tr ni hay tng tr Zener ZZ bt u
gim nhanh v dng phn cc ngc
tng gi tr nhanh chng .
Ti v tr bn di im khuu
p Zener VZ duy tr gn nh khng i
(hi tng rt t) khi dng IZ gia tng .
TNH IU HA P CA DIODE ZENER:

Khi diode Zener hot ng trong vng phn cc ngc, c kh nng duy tr p ngc t
ngang qua hai u diode c gi tr hu nh khng i khi dng phn cc nghch thay i trong
phm vi rng, ta ni diode Zener c tnh iu ha hay n nh in p.
Ga tr nh nht ca dng in phn cc ngc l IZK phi c duy tr diode Zener
hot ng nh b n p. Khi dng qua diode Zener c gi tr thp hn mc IZK tnh n p ca
Zener s bin mt. Ga tr ln nht ca dng in phn cc ngc l IZM cng cn c duy tr, khi
dng qua diode Zener c gi tr cao hn mc IZM diode b hng do cng sut tiu tn nhit trn
diode qu ln. Mt cch c bn, diode Zener c kh nng duy tr in p t ngang qua hai u
diode hu nh khng i khi dng in ngc thay i trong phm vi t IZK n IZM . Trong cc ti
liu trnh by c tnh k thut ca diode Zener cho bi cc nh sn xut, p nh mc ca diode
Zener VZT c cho theo dng in phn cc nghch th nghim IZT . Gi tr ca dng IZT thng
l trung im ca phm vi dng in t IZK n IZM .
8.7.2.MCH TNG NG CA DIODE ZENER:
Trong hnh H8.58a trnh by mu diode l tng
ca diode Zener trong trng thi phn cc nghch. Gi
tr ca ngun p khng i VZ bng gi tr nh mc ca
diode Zener. Nn nh, ngun p ny ch c gi tr biu
din trng thi hot ng ca diode v bn thn ca
diode khng to ra sc in ng.
a./ L tng
HNH H8.58:
b./ Thc nghim
Trong hnh H8.5b trnh by mu thc nghim

ca diode Zener trong trng thi phn cc nghch bao
gm tng tr ni VZ ca diode zener. c tuyn Volt
ampere thc t khng hon ton thng ng trong on
lm vic.
297
Trong hnh H8.59, vi s thay i dng

in Zener IZ trong phm vi IZ to ra mt
khong thay i p zener VZ . Theo nh
lut Ohm ta c tng tr ni ca diode
Zener nh ngha nh sau:
ZZ
VZ
IZ
(8.75)
Thng thng gi tr ZZ c xc
nh ti im c gi tr dng zener bng
dng th nghim IZT v gi l ZZT : tng tr
ni th nghim. Trong hu ht cc trng
hp gi tr ZZT l hng s trong dy gi tr
lm vic ca dng in zener v c th
xem ZZT l in tr thun.
HNH H8.59
TH D 8.8:
Cho diode Zener 1N4736 c ZZT 3,5 . Cc s liu cho trong ti liu k thut l:
VZT 6,8 V ; IZT 37 mA v dng IZK 1mA . Xc nh in p ngang qua hai u diode Zener khi
c dng qua diode ln lt l: 25 mA v 50 mA
GII
Thng s k thut ca diode
cho trong ti liu k thut gm:
VZT 6,8 V ; IZT 37 mA ; ZZT 3,5 .
VZT 6,8 V
VZ
IZK 1mA
Khi dng qua diode IZ 50 mA

gi
IZT
IZT 37mA
tr
ny tng cao hn
37 mA mt khong l:
dng
IZ IZ IZT 50 37 13mA
IZ 50 mA
in p t ngang qua hai u

tng tr ni ca diode l VZ .
VZ VZT VZ
VZ ZZT .IZ 3,5 13mA 45,5mV
IZ
in p t ngang qua hai u

Diode Zener ti dng IZ 50 mA l:
VZ VZT VZ 6,8 0,0455 6,85 V

Tng t khi dng qua diode zener l IZ 25 mA , p ngang qua hai udiode Zener l:
VZ VZT ZZ . IZ IZT 6,8 3,5 0,025 0,037 6,76 V

298
8.7.3.CC NH HNG CA NHIT LN DIODE ZENER:

8.7.3.1.H S NHIT (TEMPERATURE COEFFICIENT):
H s nhit ca diode Zener c nh ngha l phn trm thay i in p zener khi

nhit mi trng thay i 1oC. H s nhit c k hiu l TC . Gi VZ l thay i p
zener khi khong nhit mi trng thay i l T v VZ l p zener nh mc (thng c
xc nh ti nhit 25oC). Ta c quan h sau:
VZ VZ TC T
(8.76)
n v ca cc i lng trong quan h (8.75) l: VZ VZ V ; TC v

oC
T o C . H s nhit TC c th c gi tr dng hoc m. Vi h s nhit dng, khi

nhit gia tng p zener tng; ngc li vi h s nhit m khi nhit gia tng p zener gim.
mV
Trong mt s cc ti liu k thut , n v ca h s nhit c tnh theo

, trong
o
C
trng hp ny quan h (8.75) c vit li nh sau:
VZ TC T
(8.77)
TH D 8.9:
Cho diode Zener c p zener l VZ 8,2 V ti nhit mi trng l 25oC, bit h s nhit
ca diode Zener l TC 0,05 % o . Xc nh p zener ti 60oC.
GII
VZ 8,2
p dng quan h (8.76) ta c:

o
0,05
60 25 0,1435 V
100
p zener ti 60 C l:
VZ
60o C
VZ
25o C
VZ 8,2 0,1435 8,34 V
8.7.3.2.CNG SUT TIU TN (POWER DISSIPATION):
Cng sut tiu tn cc i l cng sut tiu th ti a cho php khi diode zener hot
ng. Gi PD max l cng sut tiu tn ti a cho php v PD l cng sut tiu tn trn diode zener
ti im lm vic bt k. Ta c quan h sau:
PD VZ IZ
(8.78)
Gi tr PD max ca mi diode zener c xc nh bi nh sn xut ti nhit chun

nh trc (gi s ti 50oC). Khi nhit mi trng thay i , gi tr PD max cho php gim
xung khi nhit gia tng. Gi KDP l h s gim cng sut tiu tn (Derating Power
mV
Coefficient) cc i; n v ca h s ny l KDP
. Ta c quan h sau:
oC
PD
PD KDP T
(8.79)
299
TH D 8.10:
Cho diode Zener c PD max 400 mW ti 50oC, bit h s KDP 3,2 mV o . Tm cng
sut tiu tn cc i cho php ti nhit 90oC .

GII
p dng quan h (8.79) ta c:
PD
90o C
PD
50o C
KDP T 400 3,2 90 50 272 mW
8.7.4.CC P DNG CA DIODE ZENER:

8.7.4.1.DNG DIODE ZENER IU HA P NG RA KHI P NG VO THAY I:
Trong hnh H8.60 trnh by phng php

p dng diode zener iu ha in p khi p
DC ng vo thay i. Khi in p ng vo thay
i trong phm vi nh trc, diode zener duy tr
in p t ngang qua hai u ca n gn nh
khng i. Khi p vo VIN thay i, dng IZ thay
B NGUN DC
Dng I tng
Z
a./ Khi p vo tng, p ra khng i ( IZK < IZ < IZM )

B NGUN DC
i t l vi in p ng vo trong phm vi xc
nh trc.
Tng ng vi phm vi thay i in p
vo nu trn, dng qua diode zener thay i
trong phm vi t: IZK (dng cc tiu qua diode
zener) n IZM (dng cc i qua diode zener).
Dng I gim
Z
in tr R ni trn ng vo, c gi l
in tr gii hn. m t r rng hn tnh iu
ha in p ca diode zener chng ta kho st
th d 8.11 sau y :
TH D 8.10:
b./ Khi p vo gim, p ra khng i ( IZK < IZ < IZM )
HNH H8.60
Cho diode zener c m s 1N4740, xem

hnh H8.61 c th iu ha p khi dng qua
zener thay i trong phm vi t : IZK 0,25 mA
n IZM 100 mA . T ti liu ca nh sn xut
ta c cc thng s khc l : PD max 1W v VZ 10 V

GII
u tin cn ch s liu sau:
IZM
HNH H8.61
PD max
VZ
1W
0,1A 100 mA
10 V
Tng ng vi dng nh nht qua diode zener, in p t ngang qua hai u in tr

gii hn R 200 l :
VR min R.IZK 220 0,25 mA 55 mV

Gi tr thp nht ca p ng vo l :
Vin min VR min VZ 10 V 55mV 10,055 V

300
Tng ng vi dng ln nht qua diode zener, in p t ngang qua hai u in tr gii
hn R 200 l :
VR max R.IZK 220 100 mA 22 V

Gi tr cao nht ca p ng vo l :
Vin max VR max VZ 22 V 510 V 32 V

Trong qu trnh tnh ton ny chng ta b qua nh hng ca tng tr ni zener , thc
cht in p ng ra hi thay i khc gi tr 10 V khi p vo thay i trong phm vi t 10,055 V
n 32 V.
TH D 8.11:
Cho mch iu ha in p dng
diode zener c m s 1N4733, xem hnh
H8.62. T ti liu k thut ta c cc thng s:
VZ 5,1V ;
IZT 49 mA ;
IZK 1 mA ;
PD max 1W
v ZZ 7 . Xc nh gi tr
min v max ca p ng vo Vin diode
HNH H8.62
zener iu ha in p trn ng ra.
GII
Gi s gi tr tng tr ni ca diode
zener c gi tr khng i trong phm vi
dng in qua zener c kho st, mch
in tng ng ca didode zener c
v li trong hnh H8.63.
Ti lc dng in qua diode zener c
gi tr nh nht IZK 1 mA , in p ra VOUT
o trn hai u diode zener c xc nh
theo quan h sau:
HNH H8.63
VOUT min VZ ZZ IZK IZT 5,1 7 0,001 0,049 4,764 V

Dng ti a cho php qua diode zener:
IZM
PD max
VZ
1
0,196 A
5,1
p VOUT o trn hai u diode zener lc dng IZM qua mch:
VOUT max VZ ZZ IZM IZT 5,1 7 0,196 0,049 6,129 V

p VIN trn ng vo lc dng qua mch l IZK :
VINmin R.IZK VOUT min 100 0,001 4,764 4,964 V

p VIN trn ng vo lc dng qua mch l IZM :
VINmax R.IZM VOUT max 100 0,196 6,129 25,729 V

Tm li in p ng vo cho php thay i trong phm vi: 4,96 V n 25,73V iu ha
p ng ra trong phm vi : 4,76 V n 6,13 V.
301
8.7.4.2.DNG DIODE ZENER IU HA P NG RA KHI TI THAY I:
Trong hnh H8.64 trnh by mch iu

ha in p dng diode zener khi in tr ti RL
thay i gi tr. Diode zener duy tr in p t
ngang qua hai u in tr ti RL co gi tr gn
nh khng i khi dng qua diode zener c gi
tr trong phm vi IZK IZ IZM .
HNH H8.64
Khi in tr ti RL , ti h mch, dng qua ti bng 0, tt c dng in u qua diode

zsener; ta ni mch iu ha in p ang hot ng ti trng thi khng ti.
Khi in tr RL c u song song vi diode zener, trn cc nhnh ca zener v RL c
cc dng in i qua. Dng in tng qua in tr gii hn R cn c gi tr khng i din p

trn hai u diode zener c n nh.
Khi gi tr RL gim, dng qua ti IL tng v dng qua IZ gim, diode zener tip tc iu ha
p cho n khi dng IZ t n gi tr thp nht l IZK . Ti lc ny dng qua ti t gi tr ln nht
v xc nh iu kin y ti. S kin ny c m t c th bng s trong th d 8.12.
TH D 8.12:
Xc nh gi tr cc tiu v cc i ca
dng qua ti khi diode zener trong hnh H8.65
iu ha in p. Xc nh gi tr cc tiu v
cc i ca in tr ti RL c s dng. Cho
VZ 12 V ; IZK 1 mA ; IZM 50 mA . Gi s
tng tr ni ca diode zener ZZ 0 v VZ
duy tr khng i gi tr 12 V trong khong gi tr
dng qua zener nu trn .
HNH H8.65
GII
Khi dng qua ti IL 0 A ; dng qua diode zener t gi tr ti a l IZ(max) :
IZ(max)
Vin VZ
R
24 12
0,02553 A 25,53mA
470
V gi tr ti a ca dng qua diode zener l IZ(max) IZM , nn gi tr RL l gi tr

cc i ca in tr ti v dng IL 0 A l gi tr cc tiu cho php qua ti.
Gi tr ti a ca dng qua ti xy ra khi dng qua diode zener t gi tr thp nht l
IZK 1 mA ; ta c:
IL(max) IT IZK IZ(max) IZK 25,53 1 24,53 mA

Dng IT l dng tng qua in tr gii hn R 470 , gi tr ny bng gi tr dng cc
i qua diode zener lc khng ti.
Gi tr cc tiu ca in tr ti: RL(max)
VZ
IL(min)
12 V
0,48919 k 489,2
24,53mA
302
TH D 8.13:
Cho mch in hnh H8.66, trong diode zener
1N4744 c cc thng s k thut nh sau: VZ 15 V ti
dng
IZT 17 mA ;
IZK 0,25 mA ;
ZZ 14 ;
PD(max) 1W . Xc nh:
a./ p VOUT ti dng IZK v IZM .
b./ Gi tr in tr gii hn R .
c./ Gi tr cc tiu ca in tr ti RL .
HNH H8.66
GII
a./ p VOUT vi dng in cc tiu qua diode, ta c:
VOUT VZ VZK ZZ IZ 15 14 0,00025 0,017 14,7655 V

Dng cc i cho php qua diode zener:
IZM
PD(max)
VZT
1
0,06667 A 66,67 mA
15
p VOUT vi dng in cc i qua diode :
VOUT VZ VZK ZZ IZ 15 14 0,06667 0,017 15,695 V

b./ Tnh ton gi tr in tr gii hn theo dng in cc i qua diode zener lc khng ti. Ta c:
VIN VOUT max

IZM
24 15,695
124,57
0,06667
Khi in tr gii hn R l in tr than; chn in tr c gi tr tiu chun gn gi tr tnh

ton l: 130 .
c./ Gi tr cc tiu ca in tr ti RL .
Dng qua in tr gii hn R khi dng qua diode zener c gi tr cc tiu:
IT
VIN VOUT(min)
R
24 14,76
0,071 mA
130
Dng qua in tr ti RL khi dng qua diode zener c gi tr cc tiu:
IL IT IZK 0,071 0,00025 0,07075 A 70,75 mA

Gi tr in tr ti ti thiu cho php p ng ra c n nh:
RL min
VOUT min
IL
14,76
208,62 209
0,07075
303
8.7.4.3.MCH GII HN DNG DIODE ZENER MCH XN:
Diode zener c th dng trong cc mch xoay chiu gii hn in p ti cc mc gii

hn cho trc. Chng ta c ba phng php gii hn p dng diode zener.
Trong hnh H8.67, trnh by mch
gii hn p xoay chiu. Tng ng bn k
dng ca p VIN diode zener gii hn bn
k dng bng vi mc p VZ ca diode
zener. Trong sut bn k m, zener tc
ng nh diode phn ccv thun v gii
hn mc p m trong phm vi 0,7V.
HNH H8.67
Khi u o cc ca zener, ta c
mch gii hn p theo hnh H8.68, mch
gii hn nh p xoay chiu trong bn k
m theo tc ng ca zener v trong bn
k dng ca p VIN in p trn diode
zener c gii hn to mc + 0,7V.
Trng hp th ba ca mch gii
HNH H8.68
hn in p dng hai diode zener u

ni tip ngc cc tnh nh trong hnh
H8.69. Ti bn k dng, diode zener
D1 tc ng nh diode thng thng
trng thi phn cc thun v diode
zener D2 tc ng nh b gii hn.
Khi p ng vo bn k m tc ng
ca cc diode ngc li. Gi s cc
diode zener D1 v D2 c cng mc p
VZ , cc mc in p gii hn c gi
HNH H8.69
tr nh trong hnh v.
TH D 8.14:
Cho mch gii hn in p xoay chiu nh
trong hnh H8.70 , xc nh dng p trn ng ra.
GII
Tng ng vi bn k dng ca p xoay
chiu trn ng vo VIN , diode zener pha trn phn cc
HNH H8.70
thun v diode zener bn di phn cc nghch.

in p trn ng ra xc nh nh sau:
VOUT 0,7 5,1 5,8 V

Ti bn k m diode pha trn tc ng nh
b gii hn v diode zener bn di phn cc
thun, ta c p ng ra xc nh theo quan h:
VOUT 0,7 3,3 4 V

HNH H8.71
p ng ra trnh by trong hnh H8.71.
304
BI TP CHNG 8
BI TP 8.1
Cho mch chnh lu ton k vi mch lc dng t cung cp in p DC 26 V cho ti in
tr 3,3 k . Gi thit diode l l tng, xc nh :
a./ Gi tr cc tiu cho t lc bit in p tc thi trn ti c gi tr nhp nh trong phm vi 0,5 V.
Chn gi tr in dung gn dy gi tr thc t (10 ; 22 ; 33 ; 47 ; 100 ; 220 ; 330 ; 470 . . .) .
Tnh li h s nhp nh vi gi tr t lc c chn.
b./ p hiu dng cp vo mch chnh lu
P S:
a./ r = 0,01923 ; C = 45,49 F chn C = 47 F r = 1,86 %

b./ Vin = 18,97 19 V
BI TP 8.2
Cho mch chnh lu ton k khng mch lc lp th cp bin p cch ly, bit p hiu
dng ng vo bin p l 110 V 50Hz v p ng ra ca mch chnh lu c gi tr nh l 15 V .
in tr ti RL 700 . Khi lp thm mch lc t in p DC trn ng ra l 14 V. Khi xem cc
diode chnh lu l tng, xc nh h s nhp nh trn ti suy ra in dung ca t lc.
P S:
D1
r = 4,12% ; C = 100 F
D3
RL
BI TP 8.3
Thit k mch chnh lu ton k c mch lc
dng t, dng bin p cch ly th cp c im gia.
p hiu dng th cp bin p l 18 V 0 18 V.
in tr ti RL 680 . Bit rng cc diode chnh
lu l tng, tn s ngun in cp vo bin p l
50 Hz v h s nhp nh trn ti khng vt qu 5%.
Vab 12 V
P S:
Vbc 12 V
C
D4
HNH H8.72
D2
RL
C = 84,9 F chn C= 100 F ,

r = 4,25% ; VDC = 23,7 V
BI TP 8.4
Tm hiu v gii thch nguyn l hot ng
ca mch chnh lu trong hnh H8.72. Kho st mch
theo cc trng hp :
a./ TH 1 : Khng dng cc t lc C.
b./ TH2 : C dng t lc C.
BI TP 8.5
HNH H8.73
V dng sng ca in p ra VOUT ca cc mch (a) ; (b); (c) trong hnh H8.73. Xt cc
trng hp diode l l tng v diode c dng thc nghim.
305
BI TP 8.6
HNH H8.74
V dng sng ca in p ra VOUT trn in tr ti RL ca cc mch (a) ; (b); (c) trong hnh
H8.74. Xt cc trng hp diode l l tng v diode c dng thc nghim.
BI TP 8.7
HNH H8.75
V dng sng ca in p ra VOUT ca cc mch (a) ; (b) trong hnh H8.75. Xt cc

trng hp diode l l tng v diode c dng thc nghim.
BI TP 8.8
HNH H8.76
V dng sng ca in p ra VOUT ca cc mch (a) ; (b) ; (c) v (d) trong hnh H8.76.
Xt cc trng hp diode l l tng v diode c dng thc nghim.
306

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K THUT IN IN T CHNG 8

Cc in t chuyn ng trn cc tng qu o

Trong , l s th t ca shell tnh t trong nhn ra pha ngoi.

8.1.2.CHT DN IN, CHT CCH IN V CHT BN DN:

Vi mc tiu kho st cc tnh cht in ca vt liu,

Cht dn in l vt liu cho php dng in i qua mt cch d dng. Cc cht dn in

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

8.1.5.SO SNH CU TRC NGUYN T CA CHT BN DN SILICON V GERMANIUM:

8.1.8.TNH DN IN TRONG VT LIU BN DN:

iu kin ny ch xy ra ti nhit tuyt i 0o Kelvin.

Mt tinh th silicon thun khit ti nhit mi

Ti nhit bnh thng ca mi trng,

Khi cp in p mt chiu ngang qua hai

8.1.9.BN DN LOI N V BN DN LOI P:

gia tng lng in t trong dy dn

S lng in t t do c kim sot

HT TI A (MAJORITY CARRIERS) V HT TI THIU (MINORITY CARRIERS)

Phng php to ra cc in t t do theo phng thc ny khng hnh thnh l trng

gia tng lng l trng trong bn dn silicon

HT TI A (MAJORITY CARRIERS) V HT TI THIU (MINORITY CARRIERS)

Dng in ti trong trng hp ny l do cc l trng, cht bn dn silicon (hay

Khi to thnh mi ni pn gia khi bn

Trong vng n cha nhiu in t t do

Nh trnh by trong cc mc trn, bn dn loi p to nn t nguyn t silicon kt hp vi

Vng ngho (deplete region)

a./ Ti lc hnh thnh mi ni pn, cc in t t

b./ Vi mi in t t o khuch tn sng mi ni v ti hp

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

a./ Ti lc hnh thnh tip gip pn

b./ Ti trng thi cn bng

Cc dy ha tr v dy dn trong vt liu n c cc mc nng lng hi thp hn so vi

Cc in t t do trong cht n chon y vng trn ca dy dn ti mc nng lng

Phn cc diode l cp in p mt chiu (DC) ngang

Khi phn cc thun, cn nh:

Hnh H8.21 trnh

Nh trnh by trong cc mc trn, sau khi cc in t n vng p thi bt cc nng

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

Khi cc in t qua khi vng p, cc in t tr thnh cc in t dn trong vt dn. Hn

Phn cc nghch l iu kin cn thit ngn cn

Mt lng nh ca cc in t t do trong vng p c y n mi ni pn do tc dng

a./ in p phn cc thun thp VF < 0,7 V

b./ in p phn cc thun t n v duy tr VF = 0,7 V

c tuyn Volt Ampere l th hay ng biu din m t quan h in p gia hai u

VF : in p t ngang qua hai u diode lc phn cc thun.

Khi tip thc gia tng in p VBIAS

, dng in IF cng gia tng nhng in p ngang qua

hai u diode hi gia tng trong phm vi 0,7 V .

b./ M rng c tuyn trong hnh a . in tr ng rd gim

HNH H8.26: c tuyn Volt Ampere phn cc thun ca diode

in tr ng lc phn cc thun diode khng l hng s v c gi tr thay i dc theo

8.2.6.3.C TUYN VOLT AMPERE KHI PHN CC NGHCH (REVERSE BIAS):

ph v vi cc trng hp ngoi l khng l trng thi

c tuyn Volt Ampere tng

in th ro cn gim thp gi tr khi nhit gia tng.

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

8.2.6.5. PHNG TRNH C TUYN VOLT AMPERE CA DIODE THEO SCHOCKLEY:

Theo l thuyt Vt Liu Bn Dn, p dng hm xc sut theo Fermi-Dirac tin on

: hng s ti hn ( = 1 cho Ge v = 2 cho Si )

V e19,3237.vD 1 ta vit li dng gn ng cho quan h (8.5) nh sau:

Tng t quan h (8.3) c vit li theo dng gn ng nh sau:

T quan h (8.2) nh ngha cho in tr ng ca diode, da vo quan h (8.7) ta suy ra

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

Vit li quan h (8.7) theo dng sau:

Ti nhit mi trng 27oC (tng ng 300oK) quan h (8.10) c vit li nh sau: