Triacs BT136 Series: General Description Quick Reference Data

Philips Semiconductors
Product specification
Triacs
BT136 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated triacs in a plastic envelope,

intended for use in applications requiring
high bidirectional transient and blocking
voltage capability and high thermal cycling
performance. Typical applications include
motor control, industrial and domestic
lighting, heating and static switching.
SYMBOL
PARAMETER
BT136BT136-
VDRM
PIN
DESCRIPTION
main terminal 1
main terminal 2
gate
PIN CONFIGURATION
600
4
25
A
A
SYMBOL
tab
T2
tab
UNIT
600
600F
Repetitive peak off-state

voltages
RMS on-state current
Non-repetitive peak on-state
current
IT(RMS)
ITSM
PINNING - TO220AB
MAX.
T1
1 23
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state

voltages
IT(RMS)
ITSM
RMS on-state current

Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing

Repetitive rate of rise of
on-state current after
triggering
Peak gate current

Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
CONDITIONS
full sine wave; Tmb 107 C

full sine wave; Tj = 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/s
T2+ G+
T2+ GT2- GT2- G+
over any 20 ms period
MIN.
MAX.
UNIT
6001
25
27
3.1
A
A
A2s
-40
-
50
50
50
10
2
5
5
0.5
150
125
A/s
A/s
A/s
A/s
A
V
W
W
C
C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/s.
June 2001
Rev 1.400
Triacs
BT136 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
60
3.0
3.7
-
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL
PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
MIN.
BT136VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 C
VD = VDRM(max);
Tj = 125 C
TYP.
MAX.
UNIT
...
...F
5
8
11
30
35
35
35
70
25
25
25
70
mA
mA
mA
mA
7
16
5
7
5
20
30
20
30
15
20
30
20
30
15
mA
mA
mA
mA
mA
0.25
1.4
0.7
0.4
1.70
1.5
-
V
V
V
0.1
0.5
mA
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL
PARAMETER
dVD/dt
Critical rate of rise of

off-state voltage
dVcom/dt
Critical rate of change of

commutating voltage
tgt
Gate controlled turn-on

time
June 2001
CONDITIONS
BT136VDM = 67% VDRM(max);
Tj = 125 C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 95 C;
IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
ITM = 6 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/s
...
100
...F
50
250
V/s
50
V/s
Rev 1.400
Triacs
BT136 series
Ptot / W
Tmb(max) / C
101
IT(RMS) / A
104
7
6
= 180
107 C
107
120
5
110
90
60
113
30
3
116
119
122
3
IT(RMS) / A
125
5
0
-50
Fig.1. Maximum on-state dissipation, Ptot, versus rms

on-state current, IT(RMS), where = conduction angle.
1000
50
Tmb / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,

versus mounting base temperature Tmb.
ITSM / A
12
IT(RMS) / A
ITSM
IT
10
T
time
Tj initial = 25 C max
100
6
dIT /dt limit
4
T2- G+ quadrant
2
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.
30
ITSM / A
BT136
1.4
time
Tj initial = 25 C max
1.2
15
10
0.8
0.6
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
June 2001
VGT(Tj)
VGT(25 C)
I TSM
IT
20
10
Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 107C.
1.6
25
0.1
1
surge duration / s
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25C), versus junction temperature Tj.
Rev 1.400
Triacs
BT136 series
IGT(Tj)
IGT(25 C)
12
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- GT2- G+
2.5
2
typ
10
max
Vo = 1.27 V
Rs = 0.091 ohms
8
6
1.5
1
0.5
0
-50
50
Tj / C
100
150
0.5
1.5
VT / V
2.5
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IT / A
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)

unidirectional
2.5
bidirectional
1
2
1.5
0.1
P
D
tp
0.5
0
-50
50
Tj / C
100
0.01
10us
150
1ms
10ms
0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-mb, versus

pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25C),

versus junction temperature Tj.
0.1ms
dVcom/dt (V/us)
IH(Tj)
IH(25C)
1000
off-state dV/dt limit
2.5
BT136 SERIES
100
BT136...F SERIES
1.5
10
1
0.5
0
-50
dIcom/dt = 5.1 3.9

A/ms
0
50
Tj / C
100
150
Fig.9. Normalised holding current IH(Tj)/ IH(25C),

versus junction temperature Tj.
June 2001
50
2.3
1.8
100
1.4
150
Tj / C
Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
Rev 1.400
Triacs
BT136 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 2001
Rev 1.400
Triacs
BT136 series
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2
PRODUCT
STATUS3
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
June 2001
Rev 1.400

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Philips Semiconductors

QUICK REFERENCE DATA

Passivated triacs in a plastic envelope,

Repetitive peak off-state

Repetitive peak off-state

RMS on-state current

I2t for fusing

Peak gate current

full sine wave; Tmb 107 C

over any 20 ms period

Gate trigger current

Off-state leakage current

Critical rate of rise of

Critical rate of change of

Gate controlled turn-on

Fig.1. Maximum on-state dissipation, Ptot, versus rms

Fig.4. Maximum permissible rms current IT(RMS) ,

Fig.2. Maximum permissible non-repetitive peak

Fig.3. Maximum permissible non-repetitive peak

Fig.5. Maximum permissible repetitive rms on-state

Fig.6. Normalised gate trigger voltage

Fig.10. Typical and maximum on-state characteristic.

Fig.7. Normalised gate trigger current

Zth j-mb (K/W)

Fig.11. Transient thermal impedance Zth j-mb, versus

Fig.8. Normalised latching current IL(Tj)/ IL(25C),

dIcom/dt = 5.1 3.9

Fig.9. Normalised holding current IH(Tj)/ IH(25C),

Fig.12. Typical commutation dV/dt versus junction

0,9 max (3x)

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

This data sheet contains data from the preliminary specification.

LIFE SUPPORT APPLICATIONS

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