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The Gunn Diode
The Gunn Diode
The Gunn Diode
Department of ECE
University of California
Myung-ha Kuh
Contents
• Overview of The Gunn Diode
• Gunn Effect
• Two-Valley Model Theory
• Gunn-Oscillation
• Gunn Oscillation Modes
• Fabrication
• Summary
• Reference
Overview of The Gunn Diode
• What is it?
– The Gunn diode is used as local oscillator covering the microwave
frequency range of 1 to 100GHz
• How it works?
– By means of the transferred electron mechanism, it has the negative
resistance characteristic
http://www.slac.stanford.edu/grp/kly/
Gunn Effect
• Gunn effect was discovered by J.B Gunn in IBM : 1963
“Above some critical voltage, corresponding to an electric field of
High-field domain
→ v = 105 m/s
Cathod -
+ Anode
Metal-coated contact
0.222ns ≈ 4.5GHz
5ns
10ns
3 10
Electric field [KV/cm]
K=0
Two-Valley Model Theory
• So that, the mobility of electron in upper valley is less due to the higher
effective mass
)
eτ Valley Effective mass Me Mobility u Cm2/V.s
J = e(µ n + µ n ) E
l l u u µ >µ
l u
Two-Valley Model Theory
σ = e(µ n + µ n )
l l u u
nl , u : Electron density in lower/upper valley
dσ dnl dnu d µl d µu
= (
e µ l + µ u )+ (
e nl + n u ) (1)
dE dE dE dE dE
Two-Valley Model Theory
2. The energy difference between the valleys must be smaller than the
bandgap energy (Eg)
• J =σE
ν >ν
1 2 → Domain(dipole) drift
ε
• τ = ≤ 0: The electric relaxation time
d
σ
Drift velocity
t t
− +
Q(t ) = Q 0e τd Q(t ) = Q 0e τd
Gunn-Oscillation
• How the NDR results in Gunn-Oscillation?(Summary)
– Above Eth, A domain will start to form and drift with the carrier stream. When E
increases, drift velocity decreases and diode exhibits negative resistance
– If more Vin is applied, the domain will increase and the current will decrease.
– A domain will not disappear before reaching the anode unless Vin is dropped
below Vth
– The formation of a new domain can be prevented by decreasing the E field below
Eth
•
Gunn-Oscillation
• The condition for the successful Domain(Dipole) drift
L ε ε
The transit time( ) > The electric relaxation time τ =
d =
vs σ eµ * n 0
vdomain
• The frequency of oscillation : f =
Leff
Gunn Oscillation Modes
• The Operation in Resonant Circuit
1. Stable domain mode(Without resonant circuit)
vs
ℇ > ℇth (Low efficiency less than 10%) f =
L
1
=τ =τt
fresonant
Gunn Oscillation Modes
3. Delayed mode :
- τ = τ (High efficiency up to 20%)
t
Electric field
T=0
T=5.6ps
T=10ps