Step

Schedule # Step Description

Tool

Week 1

Backside Scribe

NA

Week 1

Incoming Wafer Clean

8" Wet Bench

Week 1

Isolation Oxidation

Bruce Furnace

Week 2
Week 2

4
5

Resist Coat
Soft Bake

8" Headway
Hotplate

Week 2
Week 2
Week 2
Week 2
Week 2
Week 2

6
7
8
9
10
11

Exposure
Develop
Hard Bake
Oxide Etch
Resist Strip
Gate Ox Preclean

OAI
Develop Bench
Convection Oven
6" Wet Bench
Solvent Bench
--

Week 2
Week 2

12
13

Gate Oxidation
Polysilicon Deposition

Bruce Furnace
CVC Sputter

Week 3
Week 3

14
15

Resist Coat
Soft Bake

8" Headway
Hotplate

Week 3
Week 3
Week 3
Week 3
Week 3
Week 3

16
17
18
19
20
21

Exposure
Develop
Hard Bake
Polysilicon Etch
Post Etch Clean
Oxide Etch

OAI
Develp Bench
Convection Oven
Alcatel DRIE
6" Wet Bench
6" Wet Bench

Week 4
Week 4

22
23

Resist Coat
Soft Bake

8" Headway
Hotplate

Week 4
Week 4
Week 4
@ Vendor
Week 4/5
Week 4/5
Week 4/5
Week 4/5

24
25
26
27
28
29
30
31

Exposure
Develop
Hard Bake
S/D Implant
Resist Ash
Resist Strip
Post Strip Clean
Etch Sac Ox

OAI
Develp Bench
Convection Oven
-Alcatel DRIE
Solvent Bench
6" Wet Bench
6" Wet Bench

Process Details -NMOS Process Details - PMOS

RCA Clean
SC1 @ 70C / DHF (90s) / SC2 @70C
Thickness Target=1um
Dry/Wet/Dry @1000C
Shipley 1813
1.7um @ 3000RPM
100C for 60s
M1 Mask
First Level Align
AZ 300-MIF for 60s
120C for 30min
10:1 BOE, ~8.4 A/s Etch Rate
PRS-3000, 5min, 40C
RCA Clean
Thickness Target = 100nm
Dry @1000C
Thickness Target = 800nm
Shipley 1813
1.7um @ 3000RPM
100C for 60s
M2 Mask
Aligns to M1 Mask
AZ 300-MIF for 60S
120C for 30min
15s, SF6, w/ insitu O2 resist ash
Pirahna Clean
10:1 BOE, ~8.4 A/s Etch Rate
Shipley 1813
1.7um @ 3000RPM
100C for 60s
M3 Mask
Aligns to M2 Mask
AZ 300-MIF for 60S
120C for 30min
As / 150keV / 2e15
O2 Plasma Ash
PRS-3000, 5min, 40C
Pirahna Clean
10:1 BOE, ~8.4 A/s Etch Rate

RCA Clean
SC1 @ 70C / DHF (90s) / SC2 @70C
Thickness Target=1um
Dry/Wet/Dry @1000C
Shipley 1813
1.7um @ 3000RPM
100C for 60s
M1 Mask
First Level Align
AZ 300-MIF for 60s
120C for 30min
10:1 BOE, ~8.4 A/s Etch Rate
PRS-3000, 5min, 40C
RCA Clean
Thickness Target = 100nm
Dry @1000C
Thickness Target = 800nm
Shipley 1813
1.7um @ 3000RPM
100C for 60s
M2 Mask
Aligns to M1 Mask
AZ 300-MIF for 60S
120C for 30min
15s, SF6, w/ insitu O2 resist ash
Pirahna Clean
10:1 BOE, ~8.4 A/s Etch Rate
Shipley 1813
1.7um @ 3000RPM
100C for 60s
M3 Mask
Aligns to M2 Mask
AZ 300-MIF for 60S
120C for 30min
BF2 / 50keV / 2e15
O2 Plasma Ash
PRS-3000, 5min, 40C
Pirahna Clean
10:1 BOE, ~8.4 A/s Etch Rate

Week 5/6

32

ILD Preclean

8" Wet Bench

Week 5/6

33

AMAT P5000

Week 5/6

34

ILD Deposition
Activation and
Densification anneal

Bruce Furnace

Week 6/7
Week 6/7

35
36

Resist Coat
Soft Bake

8" Headway
Hotplate

Week 6/7
Week 6/7
Week 6/7
Week 6/7
Week 6/7
Week7/8
Week 7/8

37
38
39
40
41
42
43

Exposure
Develop
Hard Bake
ILD Etch
Resist Strip
Post Strip Clean
Oxide Etch

OAI
Develp Bench
Convection Oven
Plasmatherm
Solvent Bench
6" Wet Bench
6" Wet Bench

Week 7/8

44

Contact Sputter

CVC

Week 8/9
Week 8/9

45
46

Resist Coat
Soft Bake

8" Headway
Hotplate

Week 8/9
Week 8/9
Week 8/9

47
48
49

Exposure
Develop
Hard Bake

OAI
Develp Bench
Convection Oven

Week 8/9
Week 8/9

50
51

Metal Etch
Resist Strip

6" Wet Bench

Solvent Bench

Week 9/10
Week 9/10
Week 9/10
Week 9/10
Week 9/10

52
53
54
55
56

Resist Coat
Hard Bake
Oxide Etch
Backside Poly Etch
Oxide Etch

8" Headway
Convection Oven
6" Wet Bench
Plasmatherm
6" Wet Bench

Week 9/10
Week 9/10
Week 9/10
Week 10/11

57
58
59
60

Backside Sputter
Resist Strip
Sinter Anneal
Device Testing

CVC
Solvent bench
Bruce Furnace

RCA Clean
RCA Clean
SC1 @ 70C / DHF (4min) / SC2 @70C SC1 @ 70C / DHF (4min) / SC2 @70C
NMOS: Thickness Target= 1um
PMOS wafers: 100nm SiO2, 100nm
TEOS/O2, 350W, 390C,
Si3N4, 800nm SiO2
600C for 6hr in N2
600C for 6hr in N2
1000C for 20min in N2,
900C for 20min in N2,
Shipley 1813
Shipley 1813
1.1um @ 3000RPM
1.1um @ 3000RPM
100C for 60s
100C for 60s
M5 Mask
M5 Mask
Aligns to M2 Mask
Aligns to M2 Mask
AZ 300-MIF for 60S
AZ 300-MIF for 60S
120C for 30min
120C for 30min
CHF3 / O2, 30mTorr, 150W, 55min
CHF3 / O2, 30mTorr, 150W, 55min
PRS-3000, 5min, 40C
PRS-3000, 5min, 40C
Pirahna Clean
Pirahna Clean
10:1 BOE, ~14 A/s etch rate
10:1 BOE, ~14 A/s etch rate
Target Al w/ 1% Si
Target Al w/ 1% Si
Thickness = 3um
Thickness = 3um
2.5kW ---> 45nm/min Dep Rate
2.5kW ---> 45nm/min Dep Rate
Shipley 1813
Shipley 1813
1.1um @ 3000RPM
1.1um @ 3000RPM
100C for 60s
100C for 60s
M6 Mask
M6 Mask
Aligns to M5 Mask
Aligns to M5 Mask
AZ 300-MIF for 60S
AZ 300-MIF for 60S
120C for 30min
120C for 30min
Phosphoric:Nitric:Acetic:Water@ 50C
Phosphoric:Nitric:Acetic:Water@ 50C
17:1:1:1 by Volume
17:1:1:1 by Volume
~660nm/min Etch Rate
~660nm/min Etch Rate
PRS-3000, 10min, 60C
PRS-3000, 10min, 60C
Shipley 1813
Shipley 1813
1.1um @ 3000RPM
1.1um @ 3000RPM
120C for 30min
120C for 30min
10:1 BOE, 10s
10:1 BOE, 10s
SF6/O2, 150s
SF6/O2, 150s
10:1 BOE, ~8.4 A/s Etch Rate
10:1 BOE, ~8.4 A/s Etch Rate
Target Al w/ 1% Si
Target Al w/ 1% Si
Thickness = 3um
Thickness = 3um
2.5kW ---> 45nm/min Dep Rate
2.5kW ---> 45nm/min Dep Rate
PRS-3000, 10min, 60C
PRS-3000, 10min, 60C
400C in Forming Gas
400C in Forming Gas

Notes

19-Jan
26-Jan

2-Feb

Completed by MNCR Staff

16-Feb

Leave ~ 30nm of SiO2

23-Feb

2-Mar

9-Mar

9-Mar

16-Mar

16-Mar

23-Mar

23-Mar

30-Mar

30-Mar

6-Apr

6-Apr

13-Apr

13-Apr

20-Apr

RTA followed by 30 min @600 in N2 for

PMOS?

targeted 900nm, dep for 20 mins