2ND Semester B.E. / B.Tech.

First Internal Assessment Test Jan/Feb 2015

Sub. Title : Electronic Device

Date

: 20.02.2015

Sub. Code : EC6201

Branch

: ECE

Duration : 3 Hours

Max. Marks: 100

Answer all questions
Part A - (10 x 2 = 20)

1. State Mass action law.

2. Write the applications of PN diode.
3. What is diffusion capacitance
4. Draw V-I characteristics of pn diode
5. What is Reverse saturation current
6. What is Early effect in CB configuration and give its consequences?
7. Draw the h-parameter equivalent circuit of a CE ,CB &CC BJT configuration
8. Draw the symbol of multi emitter NPN Transistor
9.

In order to operate a transistor in the active region, what kind of biasing is given to
the junctions?

10. If a transistor has a of 0.97 find the value of . If =200, find the value of .
Part B - (5 x 16 = 80Marks)
11.a. Derive the PN Diode current equation from the quantitative theory of diode currents. (16)
OR
11 (b) (i) Explain the operation of PN junction under reverse bias condition with its characteristics.
(10)
(ii) The voltage across the silicon diode at room temperature 300K IS 0.71V and a current of
2.5mA flows through it.calculate the reverse saturation current. Assume =2 for silicon VT=26mV.
(6)

12. (a)

Explain the energy band diagram of PN junction diode under Zero Bias condition and
derive the expression for the diffusion potential.
(16)
Or
12 (b)i. Explain details about the switching characteristics on PN diode with neat Sketch.
(10)
ii. Explain the drift and diffusion currents for PN diode.
(6)
13. (a) Explain the principle and operation of CE transistor configurations. Compare CB,CC and
CB configuration.
(16)
OR
(b) Explain the operation of NPN transistor. With neat sketch explain the input and output
characteristics of CB configuration.
(16)

14. (a) Explain in detail about the Ebers Moll model

(16)

OR
14. (b) Explain in detail about the hybrid model.

(16)

15. (a)(i) With neat diagram explain the Junction Breakdown in PN junction Diode
(6)
(ii) Derive the Expression for Space charge width under forward bias condition and neatly
sketch the charge density, electric field intensity and potential energy barriers at the junction.
(10)
OR
15 (b) (i). Explain in detail about the Gummel Poon model.
(ii)Give the relationship between , and of a transistor

(10)
(6)