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1N4148 - 1N4448. Diode Data Scheet
1N4148 - 1N4448. Diode Data Scheet
DATA SHEET
M3D176
1N4148; 1N4448
High-speed diodes
Product data sheet
Supersedes data of 2002 Jan 23
2004 Aug 10
NXP Semiconductors
High-speed diodes
1N4148; 1N4448
FEATURES
Hermetically sealed leaded glass SOD27 (DO-35)
package
High switching speed: max. 4 ns
handbook, halfpage
k
General application
Continuous reverse voltage: max. 100 V
MAM246
Fig.1
APPLICATIONS
High-speed switching.
DESCRIPTION
MARKING
TYPE NUMBER
MARKING CODE
1N4148
1N4148PH or 4148PH
1N4448
1N4448
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
1N4148
DESCRIPTION
hermetically sealed glass package; axial leaded; 2 leads
1N4448
2004 Aug 10
VERSION
SOD27
NXP Semiconductors
High-speed diodes
1N4148; 1N4448
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
100
VR
100
IF
200
mA
IFRM
450
mA
IFSM
t = 1 s
t = 1 ms
t=1s
0.5
500
mW
Tamb = 25 C; note 1
Ptot
Tstg
storage temperature
65
+200
Tj
junction temperature
200
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
1N4148
IF = 10 mA
1N4448
IF = 5 mA
0.62
0.72
IF = 100 mA
reverse current
VR = 20 V; see Fig.5
25
nA
50
IR
Cd
diode capacitance
pF
trr
ns
Vfr
2.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-tp)
lead length 10 mm
240
K/W
Rth(j-a)
350
K/W
Note
1. Device mounted on a printed-circuit board without metallization pad.
2004 Aug 10
NXP Semiconductors
High-speed diodes
1N4148; 1N4448
GRAPHICAL DATA
mbg451
300
MBG464
600
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
(1)
100
(2)
(3)
200
0
0
100
Tamb (C)
200
VF (V)
Fig.2
Fig.3
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
101
1
10
102
103
tp (s)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Aug 10
104
NXP Semiconductors
High-speed diodes
1N4148; 1N4448
MGD004
mgd290
103
1.2
handbook, halfpage
IR
(A)
Cd
(pF)
102
1.0
(1)
(2)
10
0.8
1
0.6
101
102
0.4
0
100
Tj (C)
200
f = 1 MHz; Tj = 25 C.
Fig.5
Fig.6
2004 Aug 10
10
VR (V)
20
NXP Semiconductors
High-speed diodes
1N4148; 1N4448
tr
tp
t
D.U.T.
10%
IF
RS = 50
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50
V = VR I F x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
1 k
450
I
90%
R S = 50
D.U.T.
OSCILLOSCOPE
V fr
R i = 50
10%
MGA882
t
tr
input
signal
2004 Aug 10
tp
output
signal
NXP Semiconductors
High-speed diodes
1N4148; 1N4448
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
G1
b
max.
D
max.
G1
max.
L
min.
mm
0.56
1.85
4.25
25.4
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOD27
A24
DO-35
SC-40
2004 Aug 10
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
05-12-22
NXP Semiconductors
High-speed diodes
1N4148; 1N4448
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R76/05/pp9