(-482)

A. .
0 , VL ,
1 , VH.
, 0
, VH , 1 , VL.
(OR)
A
B
Y
0
0
0
0
1
1
1
0
1
1
1
1
(OR)

A
B
Y
VL
VL
VL
VL
VH
VH
VH
VL
VH
VH
VH
VH
(OR)

A
B
Y
VH
VH
VH
VH
VL
VL
VL
VH
VL
VL
VL
VL
(AND)
A
B
Y
0
0
0
0
1
0
1
0
0
1
1
1

C. C. Katsidis (ETY-482)

 (-482)
(AND)

A
B
Y
VL
VL
VL
VL
VH
VL
VH
VL
VL
VH
VH
VH
(AND)

A
B
Y
VH
VH
VH
VH
VL
VH
VL
VH
VH
VL
VL
VL
(OR)
A
B
Y
0
0
0
0
1
1
1
0
1
1
1
0
(OR)

A
B
Y
VL
VL
VL
VL
VH
VH
VH
VL
VH
VH
VH
VL
(OR)

A
B
Y
VH
VH
VH
VH
VL
VL
VL
VH
VL
VL
VL
VH

OXI (NOT)
A
0
1
C. C. Katsidis (ETY-482)

Y
1
0

 (-482)

OXI (NOT)

A
VL
VH

Y
VH
VL

OXI (NOT)

A
VH
VL

Y
VL
VH

(OR)
A
0
0
0
0
1
1
1
1

B
0
0
1
1
0
0
1
1

C
0
1
0
1
0
1
0
1

Y
0
1
1
1
1
1
1
1

OXI (NOR)
A
0
0
0
0
1
1
1
1

C. C. Katsidis (ETY-482)

B
0
0
1
1
0
0
1
1

C
0
1
0
1
0
1
0
1

Y
1
0
0
0
0
0
0
0

 (-482)

KAI (AND)
A
0
0
0
0
1
1
1
1

B
0
0
1
1
0
0
1
1

C
0
1
0
1
0
1
0
1

Y
0
0
0
0
0
0
0
1

OXI KAI (NAND)

A
0
0
0
0
1
1
1
1

B
0
0
1
1
0
0
1
1

C
0
1
0
1
0
1
0
1

Y
1
1
1
1
1
1
1
0

. , DL (DiodeLogic configuration) .

1. OR .

C. C. Katsidis (ETY-482)

 (-482)

OR, "1"
"1".
, "0"
"0".
1
"1" ( VL)
,

( "1").
( )
"1" :

= VR I on R = VR

VR (VA + VK )
R
Ri + rf + R

(1)

VK (0.2V
0.6V ) , rf,
.

R  Ri + rf

VA + VK = V ('1') + VK = VL + VK

(2)

"0"
( V) VR=VH,
= VR=VH,
"0".

C. C. Katsidis (ETY-482)

 (-482)

2. OR .
2 OR .

VR
"0"
, VL.
VH,
"1", , ,
( "1") .
VH
Ri
.
low, "0",

Y VR,
low, "0".

C. C. Katsidis (ETY-482)

 (-482)

3. AND .
H AND 3
OR
2.
AND "1"
"1".
"0".
, "1" ( , VL,
)
VR=VL, ( "1"). ,
"0", VH,
,
( "0") VH-VK.

C. C. Katsidis (ETY-482)

 (-482)

4. AND .
, AND
4 OR
1.
"1" ,
VH
VR (=VH) "1". ,
(
"0" ),
VH+VK.
. NOT .
5, npn

C. C. Katsidis (ETY-482)

 (-482)

VBB= 12V, VH
"1".

5. , NOT.
"0"
VL (=0Volt),
.

B =

R2
(VBB )
R1 + R2

(3)

,
VCC ( "1")
.
"1"
V (=12Volt),

.
=CE(SAT) 0.2Volt ( "0").

C. C. Katsidis (ETY-482)

 (-482)

10

I C ( SAT ) =

VCC CE ( SAT )
RC

VCC 0.2
RC

(4)

R1 R2 :

I1 =
I2 =

VA BE ( SAT )
R1

VH 0.8
R1

BE ( SAT ) (VBB )
R2

(5)

0.8 + VBB
R2

(6)

I B = I1 I 2 =

I C ( SAT )

(7)

R1=15K, R2=100K, RC=2.2K, -VBB=-12V, VCC=12V.

. DTL, TTL & RTL.

DTL
6 NAND DTL.
AND
4

5.

R1,

.

C. C. Katsidis (ETY-482)

 (-482)

11

6. NAND DTL.
.

7. NAND DTL

C. C. Katsidis (ETY-482)

 (-482)

12

6,
, 7
D1 D2.
R2
.

: RD=5K, RC=2.2K, R2=5K VCC=VH=5V.

NAND (
AND),
( "0")
( "1"). ,
( "1") ( "0").
,
( "0")
( VL
).
, , (VL+VD). VD
. ,
D1 D2
Q =0
VY=VCC=VH,
( "1").
( "1")

VCC.
D1 D2

, , .

C. C. Katsidis (ETY-482)

 (-482)

13

Q
, CE(SAT),
"0".

.
,
7 :
( "1") D1 D2
( "0").
:

V = VD1 + VD 2 + VBE ( SAT ) = 0.7 + 0.7 + 0.8 = 2.2Volt

VBE ( SAT ) = 0.8Volt

(8)
(9)

Q
.
1 :

I1 =

VCC V VCC 2.2

=
RD
RD

(10)

2 :

I2 =

VBE ( SAT )
R2

0.8
R2

(11)

I B = I1 I 2 =

VCC 2.2 0.8

RD
R2

C. C. Katsidis (ETY-482)

(12)

 (-482)

14

IC =

VCC VCE ( SAT )

RC

VCC 0.2
RC

(13)

12 13
:

min =

I C VCC 0.2
=
RC
IB

VCC 2.2 0.8

R
R
2

(14)

D1 D2 .
D1 D2 Q

.
:

= VL + VD = 0.2 + 0.7 = 0.9Volt

(15)

(
D1 D2 )
:

VBE = V V = 0.9 0.6 = 0.3Volt

(16)

VK(=0.6Volt) (:
0.7Volt ).
VK (=VBE) = 0.5 Volt
0.3Volt

D1 D2. 0.2 Volt
0.5 Volt

C. C. Katsidis (ETY-482)

 (-482)

15

VBE = V V V = 0.9 0.6 0.6 = 0.3Volt

(17)

()

()
8. ) NAND DTL
D1 7
. )
.
C. C. Katsidis (ETY-482)

 (-482)

16

VBE
0.2 0.8 Volt.

.
8 DTL NAND
Q2
(IC2).
: RD1=1.75K, RD2=2K, RC2=2.2K, R2=5K, VCC=5V.

NAND
.
8,
Q2 NAND ()
NAND
.
13
NAND
(IC=IC(0)). NAND
NAND
NAND
NAND
Q2 ( NAND)
( 8)
Q2 ..
,
Q2
. :
C. C. Katsidis (ETY-482)

 (-482)

I C ( N ) = I C (0) + NI

17

(18)

I=

VCC VD VY VCC 0.7 VL VCC 0.9

=
=
RD1 + RD 2
RD1 + RD 2
RD1 + RD 2

(19)

Q2
,

NAND :

I C ( N ) = I C (0) + NI = I B 2
VCC 0.2
V 0.9
+ N CC
= IB2
RC
RD1 + RD 2

(20)

Q2 D1
Q1.
, Q1
. :

V = VBE1( ACT ) + VD 2 + VBE 2( SAT ) = 0.7 + 0.7 + 0.8 = 2.2Volt

.

(21)

1 2 :

I1 = I C1 + I B1

I 2 = VBE 2( SAT ) / R2 0.8 / R2

(22)

Q2:

I B 2 = I1 I 2 = I C1 + I B1 0.8 / R2
C. C. Katsidis (ETY-482)

(23)

 (-482)

18

, Q1 D1
Q2
.
HT-DTL NAND.

9. NAND HT-DTL (High Threshold

DTL) Zener
.
,
8
D2 Zener.
.
RD1=3K, RD2=12K, RC2=15K, VZ=6.9V,R2=5K.

C. C. Katsidis (ETY-482)

 (-482)

19

TTL NAND.

10. TTL NAND

TTL NAND 10,
DTL-NAND 7.
: RB1=4K, RC2=1.4K, RC3=4K,
R2=1K.
DTL-NAND 7
(Transistor-Transistor Logic
- TTL).
D2 ( 7) Q2. D1 pn
- Q1 .
A, B, C
pn - Q1.

C. C. Katsidis (ETY-482)

 (-482)

20

TTL NAND.
(
"0") :

V = VL + VBE1 0.2 + 0.7 = 0.9Volt

(24)

- Q1 Q2
Q3 V =
0.7+0.7+0.7=2.1Volt. Q2 Q3
,
"1" ( VH=VCC=5Volt).
Q1 (
-) ( ) .
,
- Q1 . V
VCC Q2 Q3 .
, VY = VCE3(SAT) = 0.2V = VL ( "0").

.
Q2 -
-
Q2 Q3
.
,
Q2 Q3
.
Q1 :

C. C. Katsidis (ETY-482)

 (-482)

VC1 = VBE 2( SAT ) + VBE 3( SAT ) 0.8 + 0.8 = 1.6Volt

21

(25)

"1" "0" , VL0.2Volt
24 Q1 V1= V
=0.9Volt VBC1=VB1-VC1=0.9-1.6=-0.7 . ,
(p-) (n-)
. ,


.
TTL NAND TOTEM.

11. TTL NAND

TOTEM.

C. C. Katsidis (ETY-482)

 (-482)

22

, Q1 ,
RB1 VCC AND.
.
: RB1=4K, RC2=1.6K, RC3=130,
R2=1K.
Q3 Q4 Totem (
npn npn )
TTL. Totem
Q3 Q4 Q3 Q4.
Q3 Q4
. ( ) Q4
Q3 .
& ,
VL, Q1
Q1 VB1=VL+0.7Volt.
, Q2
Q1 Q2
, Q3
(
1.5V ):

VY = VB 3 VBE 3 VD1

(26)

( "1")


. Q2

Q4
Q3 .

C. C. Katsidis (ETY-482)

 (-482)

23

( "0"). D1
Q3 Q4
- Q3. Q2 Q4
:

VB 3 = VBE 4( SAT ) + VCE 2( SAT ) 1 Volt

(27)

VE 3 = VCE 4( SAT ) + VD1 0.9 Volt

(28)

Q3 .

TTL NOR.

12. TTL NOR

TOTEM.

C. C. Katsidis (ETY-482)

 (-482)

24

TTL NOR TTL

NAND ( Q5 Q6).
: RB1=4, RB5=4K, RC2=1.6K,
RC3=130, R2=1K.
Q2 Q6
OR.
,
NOR.
, VL,
Q1 Q5
VL+0.7 Volt Q2 Q6.
Q3
.
( )
(Q1 Q5)
Q2 Q6 .
Q2 Q6
Q4
.

C. C. Katsidis (ETY-482)

 (-482)

25

RTL NOR

13. NOR RTL

: RC=600,
RB=400, VCC=3.6V.

( "0"),
VCC ( "1").
,

CE(SAT) .
RTL (Resistor Transistor Logic)
wafer
.

C. C. Katsidis (ETY-482)