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  • Experimental No. - Aim:To Study The Working

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    vishugoldy
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    The document summarizes an experiment to study the characteristics of an N-channel MOSFET (IRF 740). The apparatus includes the MOSFET, a 1kΩ resistor, ammeter, voltmeter, and regulated power supply. The procedure applies varying voltages to the gate and drain of the MOSFET while measuring the corresponding drain current. As the gate voltage increases from 3.1V to 3.5V in steps of 0.1V, the drain current also increases due to the enhancement of the MOSFET channel. The drain characteristics reveal saturation current is reached at a drain-source voltage of 0.1V when the gate-source voltage is 3.1V.

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    Experimental No. – Aim:To Study the Working

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    The document summarizes an experiment to study the characteristics of an N-channel MOSFET (IRF 740). The apparatus includes the MOSFET, a 1kΩ resistor, ammeter, voltmeter, and regulated power supply. The procedure applies varying voltages to the gate and drain of the MOSFET while measuring the corresponding drain current. As the gate voltage increases from 3.1V to 3.5V in steps of 0.1V, the drain current also increases due to the enhancement of the MOSFET channel. The drain characteristics reveal saturation current is reached at a drain-source voltage of 0.1V when the gate-source voltage is 3.1V.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
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    Download as doc, pdf, or txt
    18 views2 pages

    Experimental No. - Aim:To Study The Working

    Uploaded by

    vishugoldy
    The document summarizes an experiment to study the characteristics of an N-channel MOSFET (IRF 740). The apparatus includes the MOSFET, a 1kΩ resistor, ammeter, voltmeter, and regulated power supply. The procedure applies varying voltages to the gate and drain of the MOSFET while measuring the corresponding drain current. As the gate voltage increases from 3.1V to 3.5V in steps of 0.1V, the drain current also increases due to the enhancement of the MOSFET channel. The drain characteristics reveal saturation current is reached at a drain-source voltage of 0.1V when the gate-source voltage is 3.1V.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as doc, pdf, or txt
    of 2

    Experimental No.

    –
    Aim:-
    To study the working and characteristics of MOSFET
    (IRF 740: N channel enhancement type)

    Apparatus:-
    N Channel enhancement type MOSFET, I Kr resistor, Ammeter (in
    MA), Voltmeter, regulated power supply connecting wires.

    Procedure:-
    The whole circuit is made on bread board. A regulated power
    supply is to be provided to both vas and Vbs. To take readings, first
    magnitude of Vas will increase so that it increases the drain current
    significantly called as threshold voltage. Sine the channel is on. Existent
    with Vas = DV and enhanced by application of a+ ve gate to source
    voltage.
    To take reading of Id, for all corresponding values in series to a
    resistor of 1kr, The corresponding voltage values of Vps, are to be
    measured through voltmeters connection in parallel b/n drain and source.
    Observation Table:-
    S.No. Vps (v) Vas=3.1v Vas = 3.2 V Vas=3.3 Vas = 3.4v Vcs. 3.5V
    ID(MA) ID(MA) ID MA) Id(MA) ID (MA)

    Observation:-
    The drain characteristics reveals for the device with Vas= 3.1v
    saturation current is at VDS = 0.1, Infect the saturation level at.

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