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Irf510, Sihf510: Vishay Siliconix
Irf510, Sihf510: Vishay Siliconix
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC)
0.54
8.3
Qgs (nC)
2.3
Qgd (nC)
3.8
Configuration
Single
D
COMPLIANT
Available
RoHS*
DESCRIPTION
TO-220AB
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF510PbF
SiHF510-E3
IRF510
SiHF510
Lead (Pb)-free
SnPb
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
20
VGS at 10 V
TC = 25 C
TC = 100 C
Currenta
ID
IDM
UNIT
V
5.6
4.0
20
0.29
W/C
mJ
EAS
100
IAR
5.6
EAR
4.3
mJ
TC = 25 C
for 10 s
6-32 or M3 screw
PD
43
dV/dt
5.5
V/ns
TJ, Tstg
- 55 to + 175
300d
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91015
S11-0511-Rev. B, 21-Mar-11
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1
IRF510, SiHF510
Vishay Siliconix
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
62
RthCS
0.50
RthJC
3.5
UNIT
C/W
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 A
100
VDS/TJ
Reference to 25 C, ID = 1 mA
0.12
V/C
VGS(th)
2.0
4.0
Gate-Source Leakage
IGSS
VGS = 20 V
100
nA
IDSS
25
250
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
0.54
gfs
VDS = 50 V, ID = 3.4 Ab
1.3
Input Capacitance
Ciss
VGS = 0 V,
180
Output Capacitance
Coss
VDS = 25 V,
81
Crss
15
Qg
ID = 5.6 A, VDS = 80 V
8.3
Gate-Source Charge
Qgs
VDS = 10 V,
2.3
3.8
6.9
16
15
9.4
4.5
7.5
5.6
20
2.5
100
200
ns
0.44
0.88
RDS(on)
ID =3.4 Ab
VGS = 10 V
Dynamic
Gate-Drain Charge
Qgd
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
13b
VDD = 50 V, ID = 5.6 A
Rg = 24 , RD = 8.4, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
pF
nC
ns
nH
IS
ISM
VSD
trr
Qrr
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 C, IS = 5.6 A, VGS = 0 Vb
TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/sb
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
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2
IRF510, SiHF510
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
100
4.5 V
101
101
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
175 C
100
20 s Pulse Width
TC = 25 C
10-1
100
4.5 V
20 s Pulse Width
TC = 175 C
10-1
91015_02
100
101
10
100
Top
91015_03
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
20 s Pulse Width
VDS = 50 V
10-1
101
91015_01
101
25 C
Top
3.0
ID = 5.6 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
91015_04
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3
IRF510, SiHF510
400
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
320
240
Ciss
160
Coss
80
Crss
Vishay Siliconix
175 C
100
10-1
VGS = 0 V
0
100
0.5
101
VDS = 20 V
91015_06
10
1.2
100 s
1 ms
10 ms
TC = 25 C
TJ = 175 C
Single Pulse
0.1
10
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4
1.1
1.0
VDS = 80 V
VDS = 50 V
0.9
12
0.8
102
ID = 5.6 A
16
0.7
20
0.6
91015_07
91015_05
25 C
1
91015_08
10
102
103
IRF510, SiHF510
Vishay Siliconix
RD
VDS
VGS
6.0
D.U.T.
RG
+
- VDD
5.0
10 V
Pulse width 1 s
Duty factor 0.1 %
4.0
3.0
2.0
VDS
1.0
90 %
0.0
25
50
75
100
125
150
175
91015_09
10 %
VGS
td(on)
td(off) tf
tr
10
0 - 0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91015_11
10-4
10-3
10-2
0.1
10
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5
IRF510, SiHF510
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
RG
+
-
IAS
V DD
10 V
0.01
tp
VDS
IAS
Fig. 12a - Unclamped Inductive Test Circuit
300
ID
2.3 A
4.0 A
Bottom 5.6 A
Top
250
200
150
100
50
VDD = 25 V
0
25
91015_12c
50
75
100
125
150
175
Current regulator
Same type as D.U.T.
50 k
QG
10 V
12 V
0.2 F
0.3 F
QGS
QGD
D.U.T.
VG
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
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6
IRF510, SiHF510
Vishay Siliconix
D.U.T.
Rg
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test
+
-
VDD
Period
D=
P.W.
Period
VGS = 10 Va
Re-applied
voltage
Inductor current
VDD
Ripple 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91015.
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7
Package Information
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Vishay Siliconix
TO-220-1
MILLIMETERS
H(1)
L(1)
M*
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
4.14
4.70
0.163
0.185
0.69
1.02
0.027
0.040
b(1)
1.14
1.73
0.045
0.068
0.36
0.61
0.014
0.024
14.33
15.85
0.564
0.624
9.96
10.52
0.392
0.414
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
0.43
1.40
0.017
0.055
H(1)
6.10
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
3.53
3.94
0.139
0.155
2.59
3.00
0.102
0.118
C
b
e
J(1)
e(1)
Revison: 19-Jan-15
Vishay
Disclaimer
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Revision: 02-Oct-12