N-Channel Enhancement-Mode

MOS Transistor
CORPORATION

2N7000 / BS170L
DESCRIPTION

ORDERING INFORMATION

The 2N7000 utilizes Calogics vertical DMOS technology. The

device is well suited for switching applications where BV of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is housed in a plastic TO-92 package.

Part

Package

2N7000
BS170L
X2N7000

Plastic TO-92
Plastic TO-92
Sorted Chips in Carriers

Temperature Range
-55oC to +150oC
-55oC to +150oC
-55oC to +150oC

PIN CONFIGURATION
2N7000
3

3
1 SOURCE
2 GATE
3 DRAIN

2
1

TO-92
(TO-226AA)

2
BOTTOM VIEW

BS170L
1

3
1 DRAIN
2 GATE
3 SOURCE

3
1 2

1
2
BOTTOM VIEW

CD5

PRODUCT SUMMARY
V(BR)DSS
(V)

rDS(ON)
()

ID
(A)

2N7000

60

0.2

BS170

60

0.5

P/N

2N7000 / BS170L
CORPORATION

ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified)

SYMBOL

PARAMETERS

LIMITS

VDS

Drain-Source Voltage

60

VGS

Gate-Source Voltage

40

ID

Continuous Drain Current

UNITS
V

TA = 25oC

0.2
A

0.13

TEST CONDITIONS

IDM

Pulsed Drain Current

PD

Power Dissipation1

TJ

Operating Junction Temperature Range

-55 to 150

Tstg

Storage Temperature Range

-55 to 150

TL

Lead Temperature (1/16" from case for 10 sec.)

TA = 100 oC

0.5
0.4

0.16

TA = 25oC
TA = 100 oC

300

THERMAL RESISTANCE RATINGS

NOTE:

SYMBOL

THERMAL RESISTANCE

LIMITS

UNITS

RthJA

Junction-to-Ambient

312.5

K/W

1. Pulse width limited by maximum junction temperature.

SPECIFICATIONS1
SYMBOL

PARAMETER

MIN

TYP2

MAX

UNIT

TEST CONDITIONS

STATIC
V(BR)DSS

Drain-Source Breakdown Voltage

60

70

VGS(th)

Gate-Threshold Voltage

0.8

1.9

IGSS

Gate-Body Leakage

IDSS

Zero Gate Voltage Drain Current

10
1
1000

On-State Drain Current

ID(ON)
rDS(ON)

75

Drain-Source On-Resistance

VDS(ON)

Drain-Source On-Voltage

gFS

Forward Transconductance

Common Source Output Conductance

gOS

100
3, 4

210

V
nA
A
mA

4.8

5.3

2.5

4.4

0.36

0.4

1.25

2.5

2.2

4.5

ID = 10A, VGS = 0V
VDS = VGS, I D = 1mA
VGS = 15V, VDS = 0V
VDS = 48V, VGS = 0V
TC = 125oC
VDS = 10V, VGS = 4.5V
4

VGS = 4.5V, ID = 75mA

VGS = 10V, ID = 0.5A

TC = 125oC
4

VGS = 4.5V, ID = 75mA

VGS = 10V, ID = 0.5A

TC = 125oC4

170

mS

VDS = 10V, ID = 0.2A

500

VDS = 5V, ID = 50mA

pF

VDS = 25V, VGS = 0V, f = 1MHz

nS

VDD = 15V, RL = 25, ID = 0.5A

VGEN = 10V, RG = 25
(Switching time is essentially
independent of operating temperature)

DYNAMIC
Input Capacitance

Ciss

16

60

Coss

Output Capacitance

11

25

Crss

Reverse Transfer Capacitance

Turn-On Time

10

SWITCHING
t ON
t OFF
NOTES: 1.
2.
3.
4.

Turn-Off Time
TA = 25oC unless otherwise specified.
For design aid only, not subject to production testing.
Pulse test; PW = 300S, duty cycle 3%.
This parameter not registered with JEDEC.

10

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