NPN General Purpose Transistor: UMT3904 / SST3904 / MMST3904 / 2N3904

UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
NPN General Purpose Transistor

UMT3904 / SST3904 / MMST3904 / 2N3904
!External dimensions (Units : mm)
2.00.2
UMT3904
0.90.1
1.30.1
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
0.2
0.70.1
(3)
2.10.1
(2)
1.250.1
(1)
0~0.1
0.3 +0.1
0
0.1~0.4
!Features
1) BVCEO > 40V (IC = 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
0.150.05
All terminals have same dimensions
Packaging type
UMT3
R1A
Code
Basic ordering unit
(pieces)
2N3904
TO-92
-
SMT3
R1A
SST3
R1A
T106
T116
T146
T93
3000
3000
3000
3000
0~0.1
0.2Min.
(3)
ROHM : SST3
+0.1
0.15 0.06
0.4 +0.1
0.05
2.90.2
MMST3904
0.80.1
(2)
Unit
60
40
Emitter-base voltage
Collector current
VEBO
IC
6
0.2
V
V
V
A
0.2
W
W
2N3904
4.80.2
3.70.2
(12.7Min.)
UMT3904,
SST3904,
Collector
MMST3904
power
dissipation SST3904, MMST3904
PC
2N3904
Junction temperature
Tj
0.35
0.625
150
Storage temperature
Tstg
55~+150
0.15
0.5 +
0.05
ROHM : TO-92
EIAJ : SC-43
C
C
(1)
(2)
(3)
5
+0.3
2.5
0.1
0.450.1
2.3
* When mounted on a 7 x 5 x 0.6 mm ceramic board.
!Electrical characteristics (Ta = 25C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
60
40
6
ICES
50
V
V
V
nA
IEBO
50
nA
0.2
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
hFE
0.3
0.65
0.85
0.95
40
70
100
300
MHz
pF
Conditions
IC = 10A
IC = 1mA
IE = 10A
VCB = 30V
VEB = 3V
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
VCE = 1V , IC = 0.1mA
VCE = 1V , IC = 1mA
VCE = 1V , IC = 10mA
Transition frequency
Collector output capacitance
Cob
60
30
300
-
Emitter input capacitance
Cib
pF
VEB = 0.5V , f = 100kHz
td
35
ns
tr
tstg
35
200
ns
ns
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA

VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
tf
50
ns
Delay time
Rise time
Storage time
Fall time
(1) Emitter
(2) Base
(3) Collector
2.5Min.
Limits
VCBO
VCEO
+0.1
0.15 0.06
0.4 +0.1
0.05
4.80.2
Symbol
Parameter
(3)
ROHM : SMT3
EIAJ : SC-59
Collector-base voltage
Collector-emitter voltage
0~0.1
2.80.2
0.2
1.6 +
0.1
(1)
!Absolute maximum ratings (Ta = 25C)
(1) Emitter
(2) Base
(3) Collector
1.1 +0.2
0.1
1.90.2
0.95 0.95
0.3~0.6
Marking
SST3904 MMST3904
0.450.1
(2)
(1)
0.2
1.3 +
0.1
UMT3904
0.95 +0.2
0.1
1.90.2
0.95 0.95
2.40.2
Part No.
2.90.2
SST3904
!Package, marking and packaging specifications
(1) Emitter
(2) Base
(3) Collector
fT
VCE = 1V , IC = 50mA
VCE = 1V , IC = 100mA
VCE = 20V , IE = 10mA, f = 100MHz
VCB = 10V , f = 100kHz
VCC = 3V , IC = 10mA , IB1 = IB2 = 1mA

VCC = 3V , IC = 10mA , IB1 = IB2 = 1mA
(1) Emitter
(2) Base
(3) Collector
UMT3904 / SST3904 / MMST3904 / 2N3904

Transistors
COLLECTOR CURRENT : IC (mA)
10
40
Ta=25C
35
8
30
25
20
4
15
10
2
5.0
IB=0A
0
0
20
10
COLLECTOR-EMITTER VOLTAGE : VCE (V)
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
!Electrical characteristic curves
Fig.1 Grounded emitter output

characteristics
Ta=25C
IC / IB=10
0.3
0.2
0.1
0
0.1
1.0
10
100
Fig.2 Collector-emitter saturation

voltage vs. collector current
500
DC CURRENT GAIN : hFE
Ta=25C
VCE=1V
3V
5V 10V
100
10
5
0.1
1.0
10
100
1000
Fig.3 DC current gain vs. collector current ( )
500
VCE=5V
DC CURRENT GAIN : hFE
Ta=125C
Ta=25C
100
Ta=55C
10
5
0.1
1.0
10
100
Fig.4 DC current gain vs. collector current ( )
1000
UMT3904 / SST3904 / MMST3904 / 2N3904

500
BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)
Transistors
AC CURRENT GAIN : hFE
Ta=25C
VCE=5V
f=1kHz
100
10
5
0.01
0.1
1.0
10
0.4
1.0
10
100
0
0.1
1000
40V
100
10
10
1.0
100
10
100
Fig.9 Rise time vs. collector

current
Fig.8 Turn-on time vs. collector

current
50
Ta=25C
VCC=40V
IC/IB=10
100
15V
VCC=40V
100
15V
1000
Ta=25C
IC / IB=10
RISE TIME : t r (ns)
40V
10
1.0
1.0
10
100
Fig.6 Base-emitter saturation

voltage vs. collector current
FALL TIME : tf (ns)
STORAGE TIME : ts (ns)
Ta=25C
IC=10IB1=10IB2
0.4
VCC=3V
Fig.7 Grounded emitter propagation

characteristics
1000
0.8
Ta=25C
IC / IB=10
100
0.8
1.2
Ta=25C
f=1MHz
CAPACITANCE (pF)
1.2
0
0.1
1000
TURN ON TIME : ton (ns)
BASE EMITTER VOLTAGE : VBE(ON) (V)
Ta=25C
VCE=5V
1.6
1.6
100
Fig.5 AC current gain vs. collector current
1.8
Ta=25C
IC / IB=10
1.8
10
Cib
Cob
VCE=3V
1
10
1.0
10
100
Fig.10 Storage time vs. collector

current
10
1.0
10
100
Fig.11 Fall time vs. collector

current
0.5
0.1
1.0
10
REVERSE BIAS VOLTAGE (V)
100
Fig.12 Input / output capacitance

vs. voltage
UMT3904 / SST3904 / MMST3904 / 2N3904

Transistors
300 MHz
10
1.0
300MHz
200MHz
0.1
0.1
100MHz
1.0
10
100
10
100
10
1.0
Fig.14 Gain bandwidth product

vs. collector current
SOURCE RESISTANCE : RS ()
.0
0d
dB
10
3.
0d
B
100
0.01
0.1
1
Ta=25C
VCE=5V
IC=100A
RS=10k
8
6
4
2
B
0d
8.
100
0.01
0.1
1
10
Fig.19 Noise characteristics ( V )
0
10
100
1k
FREQUENCY : f (Hz)
10
Fig.18 Noise characteristics ( )
10
NOISE FIGURE : NF (dB)
=3
5.
0.1
1
NF
=1
.0
dB
1k
B
0d
B
5.
0d
8.
NF
dB
0d
dB
12
B
8d B
5d B
3d
1k
Ta=25C
VCE=5V
f=1kHz
12
Ta=25C
VCE=5V
f=10Hz
10k
100k
100k
0d
Ta=25C
IC=1mA
hie=3.84k
hfe=141
5
hre=5.03 10
hoe=5.58S
1
10
100
0.1
0.1
100
0.01
25
50
75
100
125
150
ANBIENT TEMPERATURE : Ta (C)
.0
3.
dB
12
NF
=1
hre
hfe
B
8d
B
5d
B
3d B
0d
1.
8.
0d
1k
hie
0d
0.1n
hoe
10
10k
5d
1n
3d
1.
VCE=5V
f=270Hz
Fig.15 h parameter vs. collector current
Ta=25C
VCE=5V
f=10kHz
10k
10n
100
dB
12 B
8d
100n
10
100k
VCB=25V
100
Ta=25C
VCE=5V
5.
COLLECTOR CUTOFF CURRENT : ICBO (A)
Fig.13 Gain bandwidth product
1000
h PARAMETER NORMALIZED TO 1mA
400MHz 500MHz
Ta=25C
100MHz 200MHz
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
COLLECTOR-EMITTER VOLTAGE : VCE (V)
100
10k
Fig.20 Noise vs. collector current
100k

NPN General Purpose Transistor: UMT3904 / SST3904 / MMST3904 / 2N3904

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NPN General Purpose Transistor: UMT3904 / SST3904 / MMST3904 / 2N3904

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Available Formats

UMT3904 / SST3904 / MMST3904 / 2N3904