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Week 4: Casting Is A Process
Week 4: Casting Is A Process
Name
CVD
Methods
The fundamental
principle of the
process is that,
inside the reactor
between the source
glasses a chemical
reaction takes place.
Kinds
Temp.
High deposition
temperature (600 to
300)
WDWU
it
Deposition
temperature around
300K.
The films can be made
in any thickness from
~1micrometer to
>100micrometer. The
deposition id best
controlled when used
with an external
Low temperature
epitaxy (LTE) (350650C) with chemical
vapor deposition
(CVD) technique in
order to have faster
process with low cost.
This process can be used to
form films of silicon with
thickness of ~1micrometer to
>100 micrometer
Thermal oxidation
units are typically
single chambered,
equipped with a
propane or natural gas
burner and a stack.
Ion-based sputtering,
reactive sputtering,
gas flow sputtering
etc are several types
of sputtering.
Evaporation
temperature for
different materials
is different.
Sputtering deposition
temperature is much
lower temperature
than evaporation
(normally room temp)
Temperature is
50C to 150 C
for casting
deposition.
Casting is a simple
technology which
can be used for a
variety of materials,
moistly polymer.
Week 4
electrical potential.
Rate
Figure
Figure 4(a)
Relatively-low
deposition rate.
The maximum
repeatable growth rate
achieved is
30-32 um/h in the 200
mm.
Figure 4(c)
Figure 4(d)
Figure 4(e)
Figure 4(f)
Figure 4(g)
Table 2: Deposition process. [Most of the information has been taken from MEMsnet (https://www.memsnet.org/mems/processes/deposition.html)]
Here, CVD = Chemical Vapor Deposition, PVD = Physical Vapor Deposition, WDWU = When do we want to use, LP=Low Pressure, PE=Plasma Enhanced.