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EE138 Chapter 13 - Slides - Annotated 11-17
EE138 Chapter 13 - Slides - Annotated 11-17
Chapter 13
2 2
Write Schrodingers Equation:
+ V = E
2m
Solution:
( x) = u ( x)eikx
Bloch Function: periodic
function with period of the
lattice
a = well width
b = barrier thickness
Vo = barrier height
Chapter 13
(
x
)
=
u
(
x
)
e
1. Assume solution:
a = well width
b = barrier thickness
Vo = barrier height
For a periodic potential:
cos ka = P
P=
sin a
+ cos a
a
ma
Vob
2
not allowed
allowed
solns to cos
only from -1
to 1
2mE
Chapter 12
Chapter 13
h2n2
En =
8ma 2
cos ka = P
Case 2:
Vob is small (P is small, slope shallow)
allowed bands are wide
sin a
+ cos a
a
ma
P = 2 Vob
2k 2
En =
2m
Case 3:
the allowed band boundary is at
2mE
cos ka = 1
Chapter 13
n
k=
, n = 1,2,3...
a
4
Chapter 12
Chapter 13
Effective Mass
vg =
d 1 dE
=
dk dk
2
*
2 d E
m = 2
dk
Chapter 13
Chapter 13
Chapter 13
Chapter 13
10
Chapter 13
11
Review Questions
1. What do we add to the free electron model to form band gaps?
2. Which materials have the largest gap between filled and unfilled
states? Insulators, metals, or semiconductors?
3. Explain how the gap effects conductivity and optical properties?
4. Why is the effective mass different than the free electron mass?
5. How are group velocity and effective mass related to band
structure?
6. What is absorption?
7. What is emission?
8. What is a direct gap semiconductor? What is an indirect gap
semiconductor?
Chapter 13
12
Important Equations
d 1 dE
vg =
=
dk dk
2
*
2 d E
m = 2
dk
Chapter 13
13