Chng 1: Diode bn dn

Ni dung
Gii thiu
Vt liu bn dn
Diode bn dn thng thng
Chnh lu
Phn tch mch diode
Mch xn (clippers) v mch ghim in p
(Clampers)
Diode zener
Cc loi diode khc
nh hng ca nhit v cc thng s k
thut
2

K hiu
Gi tr ti im tnh Q (quiescent-point):
IEQ, VCEQ
Gi tr mt chiu: IE, VCE
Gi tr tc thi: iE, vCE
Gi tr tc thi ca thnh phn thay i
theo thi gian: ie, vce

K hiu

iE = IE + ie
4

Gii thiu
Diode l mt linh kin in t phi tuyn
n gin nht.
Cc loi diode: diode chn khng, diode
kh, diode chnh lu kim loi, diode bn
dn, v.v.
Diode bn dn:
Cu to v tnh cht
Phng php phn tch mch
ng dng
5

Vt liu bn dn
Cc loi vt liu bn dn thng dng:
Silicon (Si)
Germanium (Ge)
Gallium Arsenide (GaAs)

Cu trc nguyn t

Cu trc tinh th

Vt liu bn dn Cc mc nng lng

S dn in trong cht bn dn
Dng khuch tn (diffusion current): Khi c s
thay i mt electron (hole)
Dng chy (drift current): Khi c in trng
ngoi

10

Bn dn loi p
Doping: L qu trnh a vo cht bn
dn cc cht khc cn thit.
Bn dn loi p
Cht a vo: cht nhn (acceptor material). V
d: Boron (III)
Cu trc tinh th v s mc nng lng
(xem trang sau)
Phn t mng in ch yu: L trng (positive):
p-type material
11

Cu trc tinh th v s mc nng lng

12

Bn dn loi n
Cht a vo: cht cho (donor material).
V d: Phosphorus (V).
Cu trc tinh th v s mc nng
lng (xem trang sau).
Phn t mang in ch yu: Electron
(negative) n-type material
13

Cu trc tinh th v s mc nng lng

14

Diode bn dn thng thng

Cu trc v k hiu
Lp tip xc pn (pn junction)

15

S phn cc ca diode

16

Quan h gia dng in v in p ca

diode
Diode l tng
iD
ri
vi

+
vD
_

vi > 0: iD > 0 v vD = 0 (Diode ngn mch: short

circuit)
vi < 0: vD < 0 v iD = 0 (Diode h mch: open
circuit)
17

c tuyn Volt Ampere (VA) ca Diode

iD I o

qv D
(e mkT

Phn cc thun (vD>0): Khi

:v D mVT
v
D

iD I o e

mVT

Phn cc nghch (vD< 0): Khi : v D mVT

iD I o

1) I o (e

vD
mVT

1)

I0: Dng phn cc nghch

bo ho (reverse
saturation current), A
q = 1,6E-19 C
k = 1,38E-23 J/ 0K: Hng
s Boltzmann
T: Nhit tuyt i, 0K
m: 1 m 2: Hng s thc
nghim
25 mV, ti nhit
phng (27 0C)
18

Diode thc t v Xp x tuyn tnh ho tng

on (piecewise-linear approximation)

19

Phng php phn tch mch diode

i vi mch tn hiu ln
Xem nh diode l tng
i vi mch tn hiu b
Xem diode nh mt in tr ng

20

Chnh lu
Chnh lu l qu trnh chuyn i tn hiu xoay
chiu (ac) thnh tn hiu mt chiu (dc)
Lu : Cc v d trong phn ny s dng c
tuyn diode l tng.
Chnh lu bn sng (Half-wave rectification)
ri

+
1

vD

iD

Ideal diode

+
RL

vi = Vimcos(ot)

Nguon (Source)

vL
_

Tai (Load)
21

Chnh lu bn k (bn sng)

vi vD
nh lut Kirchhoff v in p (KVL): iD
ri RL

vi
vi > 0: vD = 0 (Diode ngn mch), iD r R ,
i
L

vi RL
v L RL i D
ri RL

vi < 0: Diode h mch: iD 0 , v L RL iD 0

22

in p trn ti vL(chnh lu bn k)

23

Phn tch tn hiu chnh lu bn sng

Gi tr trung bnh VL, dc
Khai trin Fourier

VLm
1
v L (t ) dt
TT

2
2
1 1

v L (t ) VLm cos o t
cos 2o t
cos 4o t ...
3
15
2

Lc (filter) tn hiu chnh lu bn k:

Mch lc dng lc b cc hi xoay chiu
(harmonics) nhm gi li thnh phn mt chiu
ca tn hiu vL(t): Lc thng thp (lowpass filter
LPF)
24

Lc tn hiu chnh lu bn sng

Cc
mch lc thng
thpL c bn
R
R
C

(a)

(b)

(c)

Gi s dng mch lc (a) vi RC = 100/0 v R >> RL.

Bin in p ng ra ca mch lc ti tn s n0 (n1)
l:
VLn
VLn
Von

1 no RC 2 100n
vi VLn l bin in p ng vo ca mch lc ti tn
s n0.
25

Lc tn hiu chnh lu bn sng

S dng nguyn l chng chp in p ng ra,
1
1
1
1

vo (t ) VLm
sin o t
sin 2o t
sin 4o t ...
300
3000
200

gn sng (Ripple factor):

VLm
Thnh phn DC: VL, dc
1
1

V
sin

sin
2

...

o
o
Thnh phn gn sng: r Lm 200
300

Gi tr hiu dng (rms) ca thnh phn gn

1/ 2

sng: (v ) 1 v (t )2 dt VLm 1 1 ... VLm

r rms

gn

T T

2 (200) 2

(vr ) rms

0.011
sng VL, dc 280

(300 ) 2

280
26

Chnh lu ton sng (Full wave

rectification)
Ri

D1

vi

4
Ri
8
1

D2

RL

+
vL
_

D1

D4
vi

4 -

+ 2

D3
3

D2

RL

vL
+

Hot ng v in p ra trn ti vL (chnh lu ton sng)

27

Phn tch tn hiu chnh lu ton sng

2VLm

VL , dc
Gi tr trung bnh:
Khai trin Fourier: vL (t ) VLm 2 4 cos 2ot 4 cos 4ot ...
15
3

Lc tn hiu chnh lu ton sng

Gi s dng mch lc nh phn chnh lu bn
sng, in p ng ra:
2
1
2

vo (t ) VLm
sin 2o t
sin 4o t ...
1500
300

Gi tr hiu dng ca thnh phn gn sng:

(vr ) rms

VLm
210

1
0.0024
gn sng
420

28

Mch lc (Filtering)
D1
5

vi

6
4
D2

RL

vo
_

Hot ng
T C c np nhanh n gi tr Vmax ca in p v0(t).
Khi v0(t) gim, t C phng in qua RL vi quy lut:

vo (t ) Vmax e R L C
Qu trnh tun hon vi tn s chnh lu fp:
fp = 2f0 : Chnh lu ton sng
fp = f0 : Chnh lu bn sng
vi f0: tn s ca ngun vi.

29

Phn tch v tnh ton mch lc

Xp x tn hiu ng ra bng dng sng
rng ca (sawtooth wave)
T C: C Vmax
Vf p RL

in p gn sng hiu dng:

(vr ) rms

Vmax Vmin

2 3

Chng minh: xem TLTK[1] v [2]

30

Mch nhn i in p (Voltage doubling

circuit)
C1

Mch nhn

i in p
mt bn chu
k

D2

5
D1

C2

Bn k m ca vS: C1 np in qua D1 n in
p VSmax
Bn k dng ca vS: in p chng chp ca
C1 v vS np in cho C2 qua D2 n in p
2VSmax
31

Mch nhn i in p (cont)

Mch nhn
i in p
hai bn chu
k

D1
1

D2

vS
8

C2

RL

C1

Bn k dng ca vS: C2 np in qua D1 n in p

VSmax
Tng in p vS v VSmax trn C1 (c np t bnk
trc) t ln ti RL thng qua D1
Bn k m ca vS: C1 np in qua D2 n in p
VSmax
Tng in p vS v VSmax trn C2 (c np t bn k
trc) t ln ti RL thng qua D2

32

Nhn tn s (Frequency Multiplication)

Mch chnh lu to ra tn hiu (hi
harmonics) ti cc tn s: n0.
S dng mch lc thch hp ly cc
thnh phn hi cn thit.

33

Phn tch mch diode

Lu : Cc v d trong phn ny s dng c
tuyn Diode thc
Mch Diode n gin ng ti mt chiu
(DC Load Line) i
i
ri

+ vD
vi

+
RL

vL
_

RT
vT

+
vD
_

Diode hoc
cc phn
t phi
tuyn

Mch tng ng
Thevenin ca phn tuyn
tnh
34

Phng php phn tch mch diode

Phng php th
Phn t phi tuyn c th hin bng c tuyn VA: iD f (v D )
Phn cn li (tuyn tnh) c thay th bng mch
tng ng Thevenin: v D vT iD RT hay:
1
v
iD
vD T (DCLL)
RT

RT

Tm hiu hot ng (im tnh Q quiescent

point)

35

Phng php phn tch mch (cont)

in p tng ng Thevenin vT thay i (V
d: vT = VTmsint)

36

Phn tch tn hiu nh - in tr ng

Tn hiu nh
Thnh phn thay i (ac) ca tn hiu l rt nh so vi
thnh phn dc.
vT Vdc vi Vdc Vim sin t vi Vim << Vdc
Phng php kt hp th - phn tch (graphicalanalytical)

37

Phn tch tn hiu nh

Chuyn trc to v Q: id iD I DQ, vd vD VDQ

Tn hiu nh: xem ab l on thng i qua Q v

c phng trnh:
vd
id

rd

in tr ng (dynamic resistance):

rd

vD
iD

38

Tnh gi tr in tr ng
T phng trnh: iD I o e
rd

v D
iD

v D
iD

vD
mVT

, gi tr in tr ng:
mVT m 25(mV )

I DQ
I DQ

vi: IDQ: Dng in tnh im qua Diode

Mch tng ng
RT
Vdc

VDQ

IDQ

RT
vi

rd
id

(a)
(b)
Mch (a): Tm im tnh Q (IDQ v VDQ), s dng phng php
th
Mch (b): Tm p ng tn hiu nh (id v vd), s dng in tr
ng v cc nh lut Kirchhoff
Dng nguyn l xp chng tm tng p ng

39

Mch in c thnh phn in khng

Reactive elements (L,C)
V d:

+ vD _

ri
vi = Vimsint

R1

Vdc

RL

Gi s: 1/C << RL v Vim << Vdc

ri

+V _

ri

DQ

Vdc

IDQ

(a)

R1

rd

vi

R1

RL

(b)
40

ng ti xoay chiu ACLL

Xt v d trn
gi s: 1/C << RL v Vim << Vdc
ri
vi = Vimsint
Vdc

+ vD _

R1

RL

Tn hiu dc
in tr mch tng ng Thevenin nhn t Diode:
RTdc = ri + R1
1
1

dc ca DCLL: slopedc =
RTdc
ri R1
Tn hiu nh (ac)
in tr mch tng ng Thevenin nhn t Diode:
RTac = ri + R1//RL
1
1

dc ca ACLL: slopeac =
RTac

ri R1 // RL

41

Phn tch th

Phn tch tn hiu ln - s mo dng v dch chuyn

im tnh (xem TLTK[1])
Phn tch tuyn tnh ho tng on v mch tng
ng (xem TLTK[1])

42

Mch xn v mch ghim in p

Mch xn dng loi b in p nm di hay
trn mt mc chun (reference level)
V d 1: (gi s diode l tng)
R
vo

vi
VB

V d 2: (gi s diode l tng)

43

Mch xn v mch ghim in p (cont)

V d 3: (gi s diode l tng)

R

vo

vi
VB1

VB2

Mch ghim in p (Clampers)

Mch ghim in p thc hin vic di chuyn tn hiu
(shifting operation) theo trc Y vi dch chuyn ph
thuc vo dng sng ng vo sao cho tn hiu ng ra lun
c ghim (clamped) ti mt gi tr c nh
V d: Gi s Diode l tng, RC >> T v Vm > VB
C

VC = Vm -VB

vi

vo
VB

44

Diode Zener
Diode Zener: Hot ng ch yu trong vng phn cc
nghch
K hiu v c tuyn VA
Phn cc thun: nh Diode thng thng
Phn cc nghch: I Z max iZ I Z min , vZ = VZ = constant
VZ: in p Zener
IZmax: Dng phn cc nghch
ti a ca Diode Zener
IZmin: Dng phn cc nghch
ti thiu vZ = VZ, thng
IZmin = 0.1IZmax
PZmax = VZ IZmax: Cng sut
ti a tiu tn trn Diode
Zener
45

Mch n p dng diode Zener

iR

iL

Ri

vS

+
VZ
_

iZ

vS v iL: khng n nh
RL

Mc ch: Thit k mch sao cho Diode Zener hot ng

trong vng n p (vng gy breakdown region): IZmax
iZ IZmin , vZ = VZ
Phn tch:
vS VZ
vS VZ vS VZ
i

iL

Ri

Z
Ri
iR
iZ i L
IZmax iZ IZmin vi mi gi tr ca vS v iL: min(iZ)
IZmin v max(iZ) IZmax
min(iZ ) VS min VZ I L max I Z min
Ri
v
VS max VZ
max(iZ )

Ri

I L min I Z max

46

Mch n p dng diode Zener (cont)

VS min VZ
V
VZ
Ri S max
I L max I Z min
I L min I Z max
Vi yu cu v ngun (vS) v ti (iL) cho trc, chn
c Ri cn phi c

VS min VZ
V
VZ
S max
, thng chn IZmin = 0.1 IZmax
I L max I Z min I L min I Z max

Chn Diode Zener :

I Z max

I L max (VS max VZ ) I L min (VS min VZ )

VS min 0.9VZ 0.1VS max

v: I Z max I L max v: I Z min 0.1I Z max I L min I Z max 10I L min

Thit k: Lm theo th t ngc li xc nh IZmax
ca Diode Zener v Ri
47

Thit k mch diode Zener v d 1

Thit k mch n p dng Diode Zener: VZ = 10 V
vS : 14 20 V v iL: 100 200 mA
I Z max

I L max (VS max VZ ) I L min (VS min VZ )

0.533 A
VS min 0.9VZ 0.1VS max

v I Z max I L max 0.2 A v I Z max 10I L min 1A

Chn IZmax = 0.533A Ri = 15.8
Cn xt n cng sut tiu tn cc i trn Ri v Diode
Zener:
Trn Ri: PRimax = (VSmax VZ)2 / Ri = 6.33 W
Trn Diode Zener:
PDiode = IzmaxVZ = 5.33 W
vS : 10.2 14 V v iL: 20 200 mA
I Z max

I L max (VS max VZ ) I L min (VS min VZ )

4 A
VS min 0.9VZ 0.1VS max

Khng thit k c !!!

48

Thit k mch diode Zener V d 2

VZ = 7.2 V; vS = Vdc = 12 V; iL: 12 100 mA; Tm
Ri
VSmax = VSmin = Vdc = 12V
I Z max

I L max (VS max VZ ) I L min (VS min VZ )

97.8mA
VS min 0.9VZ 0.1VS max

I Z max I L max 100mA

v I Z max 10I L min 120mA

Chn IZmax = 100 mA

43.5 Ri 40: Chn Ri = 43.5
Cng sut tiu tn cc i:
Trn Ri: PRimax = (Vdc VZ)2/ Ri = 0.53W
Trn Diode Zener: PDiode = IzmaxVZ = 0.72 W

49

Diode Zener thc t

Diode Zener thc t (xem TLTK[1])
c tuyn VA

Dng phng php th phn tch mch

50

 thay i in p (percent regulation)

V d: xt v d 1a) trong phn trc. Gi s Izmin=
0.1IZmax = 0.053A
Diode Zener thc t c gi tr in tr ng: rd = 2
Mch tng ng:
iL

Ri

Diode
Zener l
tng

VZ
iZ
rd

+
vo
_

in p ra:

Vomax = 10 + 0.532 = 11.1V

Vomin = 10 + 0.0532 = 10.1V
thay i in p:
%Reg = (Vomax Vomin) / V0 danh nh (nominal)
%Reg = (11.1 10.1) / 10 = 10%

51

Cc loi diode khc

<Xem TLTK[2] [3]>

52

nh hng ca nhit
nh hng ln c tuyn VA
in p ngng V (turn-on voltage)
V V (T1 ) V (To ) k (T1 To )
k = 2.5 mV/ oC

Dng phn cc ngc I0

I o (T2 ) I o (T1 )e K (T2 T1 )
K = 0.07 / 0C

Quan h gia cng sut v nhit Diode <Xem TLTK

[1]>
nh lut Ohm
T2 T1 21 P
21: in tr nhit (thermal resistance) gia 2 v 1 (0C / W)
P: Cng sut tiu tn (power dissipation) ti 2 (W)
53

nh hng ca nhit (cont)

Tj
jc
Pj

Tc
ca
Ta

Tj Tjmax: Cho trc bi nh sn xut

jc: Hng s, cho trc bi nh sn xut
ca: C th thay i c, s dng tn nhit (heat sink), nu gim ca
Gim Tj vi cng cng sut Pj (Ta = constant)

ng suy gim cng sut (Derating Curve)

54

Thng s k thut
Diode thng thng
in p ngc cc i (PIV Peak Inverse
Voltage)
Dng phn cc ngc cc i ti PIV
in p phn cc thun cc i
Gi tr trung bnh ca chnh lu bn sng
Nhit cc i ti tip gip pn Tjmax
ng suy gim cng sut

Diode Zener (xem TLTK[1])

55