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2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Features
High density cell design for low RDS(ON).
___________________________________________________________________________________________
D
G
S
TO-92
2N7000
(TO-236AB)
2N7002/NDS7002A
2N7002
NDS7002A
Symbol
Parameter
VDSS
Drain-Source Voltage
60
VDGR
60
VGSS
20
40
PD
- Pulsed
o
Derated above 25 C
TJ,TSTG
TL
Units
200
115
280
500
800
1500
400
200
300
3.2
1.6
-55 to 150
2.4
-65 to 150
300
mA
mW
mW/C
C
C
THERMAL CHARACTERISTICS
RJA
312.5
625
417
C/W
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol
Parameter
Conditions
Type
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
VGS = 0 V, ID = 10 A
All
IDSS
VDS = 48 V, VGS = 0 V
2N7000
TJ=125C
VDS = 60 V, VGS = 0 V
TJ=125C
IGSSF
IGSSR
2N7002
NDS7002A
mA
0.5
mA
VGS = 15 V, VDS = 0 V
2N7000
10
nA
VGS = 20 V, VDS = 0 V
2N7002
NDS7002A
100
nA
2N7000
-10
nA
2N7002
NDS7002A
-100
nA
ON CHARACTERISTICS (Note 1)
VGS(th)
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 A
RDS(ON)
2N7000
0.8
2.1
2N7002
NDS7002A
2.1
2.5
1.2
1.9
1.8
5.3
1.2
7.5
1.7
13.5
2N7000
2N7002
VGS = 10 V, ID = 500 mA
TJ =100C
VGS = 5.0 V, ID = 50 mA
TJ =100C
VGS = 10 V, ID = 500 mA
NDS7002A
TJ =125C
VGS = 5.0 V, ID = 50 mA
TJ =125C
VDS(ON)
Drain-Source On-Voltage
VGS = 10 V, ID = 500 mA
2N7000
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, ID = 500mA
2N7002
VGS = 5.0 V, ID = 50 mA
VGS = 10 V, ID = 500mA
VGS = 5.0 V, ID = 50 mA
NDS7002A
1.7
7.5
2.4
13.5
1.2
3.5
1.7
2.8
0.6
2.5
0.14
0.4
0.6
3.75
0.09
1.5
0.6
0.09
0.15
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
ID(ON)
gFS
Forward Transconductance
2N7000
75
600
2N7002
500
2700
NDS7002A
500
2700
VDS = 10 V, ID = 200 mA
2N7000
100
320
2N7002
80
320
NDS7002A
80
320
mA
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
ton
Turn-On Time
toff
Turn-Off Time
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All
20
50
pF
All
11
25
pF
All
pF
ns
VDD = 15 V, RL = 25 ,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000
10
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS = 10 V,
RGEN = 25
2N7002
NDS7002A
20
VDD = 15 V, RL = 25 ,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000
10
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS = 10 V,
RGEN = 25
2N700
NDS7002A
20
ns
IS
ISM
VSD
2N7002
115
NDS7002A
280
2N7002
0.8
NDS7002A
1.5
2N7002
0.88
1.5
NDS7002A
0.88
1.2
mA
A
V
Note:
1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
V GS =4.0V
8.0
RDS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
9.0
7.0
1 .5
6.0
1
5.0
0 .5
4.0
VGS = 10V
3.0
0
0
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
5 .0
6 .0
7 .0
8 .0
1 .5
9 .0
10
1
0 .5
0 .8
1 .2
I D , DRA IN CURRENT (A)
1 .6
V GS = 10V
I D = 500m A
R DS(on) , NORMALIZED
1.75
1.5
1.25
0.75
0.5
-5 0
-2 5
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0 .4
V GS = 10V
2 .5
TJ = 1 2 5 C
1 .5
25C
1
-55C
0 .5
150
0 .4
0 .8
1 .2
I D , DRAIN CURRENT (A)
1 .6
T J = -55C
25C
125C
1.6
1.2
0.8
0.4
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
10
Vth , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
1 .1
VDS = 10V
ID , DRAIN CURRENT (A)
4 .5
2 .5
V DS = VGS
1 .0 5
I D = 1 mA
0 .9 5
0 .9
0 .8 5
0 .8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (C)
125
150
2N7000.SAM Rev. A1
I D = 250A
1.05
1.025
1
0.975
0.95
0.925
-50
-25
V GS = 0V
1.075
BV DSS , NORMALIZED
1.1
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (C)
125
0 .5
TJ = 1 2 5 C
0 .1
25C
0 .0 5
-5 5 C
0 .0 1
0 .0 0 5
0 .0 0 1
0 .2
150
0 .6
0 .8
1
1 .2
, BODY DIODE FORW A RD VOLTAGE (V)
1 .4
10
60
V DS = 2 5 V
VGS , GATE-SOURCE VOLTAGE (V)
40
C iss
20
CAPACITANCE (pF)
0 .4
V SD
C oss
10
C rss
f = 1 MHz
V GS = 0V
ID = 5 0 0 m A
4
280m A
115m A
0
1
3
V DS
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
0 .4
0 .8
1 .2
Q g , GATE CHARGE (nC)
t d(on)
VGS
R GEN
tr
RL
t d(off)
tf
90%
90%
V OUT
Output, Vout
10%
10%
90%
DUT
Input, Vin
S
Figure 11.
t off
t on
VDD
V IN
1 .6
Inverted
50%
50%
10%
Pulse Width
2N7000.SAM Rev. A1
3
2
3
2
0.5
S(
RD
Lim
)
ON
10
it
1m
10
ms
10
0m
s
1s
0.1
0.05
V GS = 10V
10
s
DC
SINGLE PULSE
T A = 25C
0.01
0u
0.5
RD
1m
10
0.1
10
0.05
0.01
0m
0u
ms
1s
10
s
DC
VGS = 10V
SINGLE PULSE
T A = 25C
0.005
0.005
1
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
S(O
Lim
N)
it
RD
S(O
N)
Lim
10
1m
0.5
0.1
10
0.05
V GS = 10V
60
80
0u
ms
1s
10
s
DC
SINGLE PULSE
T A = 25C
0.01
0m
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
it
10
0.005
1
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
1
D = 0.5
0.5
R JA (t) = r(t) * R JA
R JA = (See Datasheet)
0 .2
0.2
0.1
0.1
P(pk)
0.05
t1
0.05
0 .02
Single Pulse
0.02
0.01
0.0001
0.001
t2
TJ - T A = P * RJA (t)
Duty Cycle, D = t1 /t2
0.01
0.01
0.1
t 1, TIME (sec)
10
100
300
1
0.5
D = 0.5
0.2
0 .2
0.1
0.05
R JA (t) = r(t) * R JA
R JA = (See Datasheet)
0.1
0 .0 5
0 .0 2
P(pk)
0 .0 1
t1
0.01
t2
Single Pulse
TJ - T A = P * RJA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
10
100
300
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. G