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4 BT
4 BT
Metallik Katlar
Bant Teorisi
letkenlik Bant
Bo
Li atomlarnn s ve p
orbitalleri arasnda
etkileim mevcut
Dolu
Fermi Seviyesi
Deerlik Bant
Silisyum
Have1000Siatoms
2000MOs
4000eor2000pairs
2pairsperSiatom
Bandiscompletelyfilled
2000MOs
Thisgives2bond
perSiatom
yaltkan
yariletken
Eg 6 Elmas Yaltkan
Eg 0.5 3 Yariletkenler
Eg 0 letken Metaller
iletken
Elektrik letkenlii
z Yariletkenler
Grup 4A
Band gap (eV)
C
6.0
Si
1.1
Ge
0.7
Gri Sn (>13 C)
0.1
Bayaz Sn (<13 C)
0
Karbon
0
Safszlk Yariletkenleri
letkenlik eser miktardaki safszlk ilavesi ile kontrol edilir.
Safszlklar Ga, Al veya As atomlardr.
Alanan atom (dopant) Si atomlar ile yer deitirir.
Dopant atom ya Si dan daha az elektron ( Ga veya Al) yada Si dan daha
fazla elektron ( As) ierir.
Silisyum
p-tipi
e
Acceptorlevel
+
letkenlikband
1.1eV
n-tipi
e
e
e
Donorlevel
Deerlik Band
Ga veya Al
Acceptor level is slightly higher in
energy than Fermi level.
Electrons readily promoted into
acceptor level.
As veya Sb
Donor level has electrons.
Electrons promoted from donor level to
conduction band.
Negative electrons are charge carriers and
so called n-type.
10
Solar Cell
_
+
Composition of p/n regions tuned to produce red & blue lasers.
Green lasers (532 nm) use special optical means to double the frequency
of infrared light emitted from p/n junction.
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