The total junction capacitance of a GaAs pn-junction at T = 300 K is found to be 1.

10 pF at an
applied voltage of -1V. The doping concentration in one region is measured and found to be 8 x 10
16 cm-3 , and the built-in potential is found to be V bi = 1.20 V. Determine ( a ) the doping on the
other region of the pn-junction and ( b ) the cross-sectional area. ( c ) The reverse-biased voltage is
changed and the capacitance is found to be 0.80 pF. What is the new value of reverse voltage?

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chapter 7 problem 31

semiconductor physics and devices 4th edition solution manual

consider a universally doped GaAs p-n junction at T =300k. the junction capacitance
at zero bias is Cj=(0) and the junction capacitance with 10-V reverse bias voltage
is Cj=(10) . the ratio of capacitance is Cj(0)/Cj(10)=3.13

10-V reverse bias is