14.

max

1.24
0.653 m
1.90
(i) From Figure 14.4, 2.6 10 4 cm

(b)

1.24

m
Eg

1.24
1.11 m
1.12
1.24
1.88 m
(b) Ge: max
0.66
1.24
0.873 m
(c) GaAs: max
1.42
1.24
0.919 m
(d) InP: max
1.35
_______________________________________
14.2
(a) For 480 nm,
1.24
1.24
E

2.58 eV

0.480
For 725 nm,
1.24
E
1.71 eV
0.725
(b) For E 0.87 eV,
1.24 1.24

1.43 m
E
0.87
For E 1.32 eV,
1.24

0.939 m
1.32
For E 1.90 eV,
1.24

0.653 m
1.90
_______________________________________
14.3
1.24
0.752 m
(a)
1.65
(i) From Figure 14.4, 9 10 3 cm 1
(a) Si: max

I d
exp d
(ii)
I 0

(ii)

I d
exp d
I 0

exp 2.6 10 4 0.80 10 4

0.125

Fraction absorbed

1 0.125 0.875
_______________________________________
14.4

I x
h

1.24
0.95 m
1.3
For silicon: 3 10 2 cm 1
Then for I x 10 2 W/cm 2 , we obtain
For h 1.3 eV,

3 10 10
1.6 10 1.3
2

19

or
g 1.44 10 19 cm

The excess concentration is

n g 1.44 10 19 10 6
or
n 1.44 10 13 cm 3
_______________________________________
14.5
p
(a) p g p 0 g
p0

5 10 15
2.5 10 22 cm 3 s
2 10 7

For h 1.65 eV,

1.24

0.752 m
1.65
From Figure 14.4, 9 10 3 cm

exp 9 10 3 1.2 10 4
0.340
Fraction absorbed 1 0.34 0.66

I 0

g h

2.5 10 1.6 10 1.65

19

22

9 10 3

 0.733 W/cm 2
or

I d
0.1 exp d
(b)
I 0

d 2 p n

1
1
ln

9 10 3 0.1
2.56 10 4 cm 2.56 m
_______________________________________
14.6
1.24 1.24

0.886 m
E
1.40
From Figure 14.4, 4.5 10 2 cm

1
1
ln

2
4.5 10
0.3
2.68 10 3 cm 26.8 m
_______________________________________
14.7
GaAs:
For x 1 m 10 4 cm, we have 50%
absorbed or 50% transmitted, then
(b) d

2
p

GL
Dp

and the generation rate is

G L x O exp x

so the differential equation becomes

d 2 p n
dx 2

p n

L2p

O
exp x
Dp

The general solution is of the form

x

B exp x
p n x A exp
Lp
Lp

I d
0.1 exp d
I 0

1
1
1
d
ln
ln

2
0.1
4.5 10
0.1
5.12 10 3 cm 51.2 m

p n

p n
0
p

x O exp x

GL

where L p D p p
The photon flux in the semiconductor is

dx

dx

0.1 exp 9 10 3 d

(a)

d 2 p n

Dp

O p
2 L2p 1

exp x

x , p n

As

0 so that B 0 . Then

x
O p

p n x A exp
exp x
L p 2 L2 1
p

At x 0 , we have
d p n
Dp
sp n
dx
x 0
x 0
so we can write

I x
0.50 exp x
IO

p n

x 0

O p
2 L2p 1

and

We can write

d p n
dx

1
1 1
ln

ln 2
4
x
0.5 10
or

x 0

2
A O p
2 2
L p L p 1

Then we have

0.69 10 cm
This value corresponds to
0.75 m , E 1.65 eV
_______________________________________
14.8
The ambipolar transport equation for minority
carrier holes in steady state is
4

AD p
Lp

2 O p D p
L 1
2

2
p

sA

s O p

2 L2p 1

Solving for A, we find

O p s D p

2 L2p 1 s D p L p

The solution can now be written as

p n x

O p

W
Ln

B sinh

L 1
2

2
p

G L n

Solving for B, we obtain

x
exp x
exp
Lp
s D p L p

_______________________________________
14.9
We have
d 2 n p
n p
Dn
GL
0
2
n
dx
or

s Dp

d 2 n p

dx 2

n p
L2n

G
L
Dn

where L n D n n
The general solution can be written in the
form

x
G L n

Ln
at x 0 means n p 0 0 .
x
Ln

n p x A cosh
For
Then

W
n p W G L n cosh
Ln

W
Ln

B sinh
and

d n p
dx

x W

W
B

cosh

Ln
Ln

5 10 3 cm

Dp
Dn

Ln N a L p N d

2
Now J S en i

1.6 10

19

1.5 10
10

25
10

3
16
3
15
10
2.236 10
10
5 10

J S 1.790 10

10

A/cm 2

I S AJ S 5 1.79 10 10
10

1.5 10
10 2

0.6350

2 s Vbi
W
e

Na Nd

N N
a
d

1/ 2

211.7 8.85 10 14 0.635

1.6 10 19

1016 1015

Vbi 0.0259 ln

so we can write

W
W
G L n D n
BD n

sinh
cosh

Ln
L
L
L
n
n
n

s o G L n cosh

Ln

2.236 10 3 cm

8.950 10
(a) I L eG L AW
We find

W
G L n

sinh

Ln
Ln

10 5 10 7

D p p 0

Lp

25 10 6

D n n 0

Ln

G L n

where B was just given.

_______________________________________
14.10

W
Ln

x
x
B sinh

n p x G L n 1 cosh

L n
n

Now

W
Ln

The solution is then

B sinh

0 A G L n A G L n
At x W ,
d n p
Dn
s o n p
dx
x W
x W

s o n cosh
G L Ln sinh

Ln

B
W

Dn
s o sinh
cosh

Ln
Ln

 1016 1015

16
15
10 10

V
I m I L I S exp m 1

Vt

1/ 2

W 9.508 10
Then

120 10 3

cm

I L 1.6 10 19 5 10 21 5 9.508 10 5
0.380 A 380 mA
(b) Voc

I
Vt ln 1 L
IS

0.380

0.0259 ln 1

10
8
.
95

10

V oc 0.5145 V

_______________________________________
14.11
From Problem 14.10, I S 8.95 10 10
A
(a) Voc

I
Vt ln 1 L
IS

120 10 3
0.0259 ln 1
8.95 10 10

0.4847 V

V
1
(b) I I L I S exp

Vt

I m 112 .75 10 3 A
112 .75 mA

Pm I mV m 112 .75 0.412

46.5 mW
Vm
0.412

(d) V m I m R L R L
I m 0.11275
R L 3.65

10 10 3
0.0259 ln 1
8.95 10 10

0.420 V

10 10 3
8.95 10 10

V
I m I L I S exp m 1

Vt

1.341 10 8
By trial and error, V m 0.412 V
Now

1.117 10 7
By trial and error, V m 0.351 V
Now

120 10 3
8.95 10 10

m
exp m 1 L
(ii) 1

V
V
IS
t

m
exp m 1 L
(c) 1
V
Vt
IS

(i) V oc Vt ln 1

I
S

100 10 3 120 10 3

V
8.95 10 10 exp

Vt
V 0.4383 V

_______________________________________
14.12
From Problem 14.10, I S 8.95 10 10 A
(a)

V oc
0.5145

0.810
Vbi
0.635

(c)

0.412
8.95 10 10 exp
1
0
.
0259

10 10 3

0.351
8.95 10 10 exp
1
0.0259

I m 9.31 10 3 A 9.31 mA
Then

Pm I mV m 9.31 0.351 3.27

mW
(b)
(i)

Then

N a (cm

8.95 10

or

_______________________________________
14.13

where

Dp

1
N a

225
1
19
8
5 10
10

7
8
5 10

Pm 2
38.3

11.7
Pm1
3.27

J
VOC Vt ln 1 L
JS

30 10 3
0.0259 ln 1
JS

Dp

1
18
1
6
19
16
6
7
5 10
10
5 10
3 10
which becomes
J S 2.289 10 12 A/cm 2
or
I S 4.579 10 12 A
We have

V
1
I I L I S exp

Vt

or

Pm I mV m 94.0 0.407 38.3

J S 1.6 10 19 1.8 10 6

Dn
1

n
Nd

J S 1.6 10 19 1.5 10 10

0.407
1
exp
0.0259

mW

which becomes

1
Na

Dn
1

n
Nd

J S eni2

1
Na

I L J L A 25 10 3 2 50 10 3 A
We have

I m 9.40 10 2 A 94.0 mA
Then

J S eni2

V OC (V)

17

14.14
(a)

V
I m I L I S exp m 1

Vt

10

J S (A/cm 2 )

0.891
10
3.477 10
16
18
0
.950
10
3.478 10
1.01
10 17
3.484 10 19
1
.07
1018
3.539 10 20
_______________________________________

100 10 3
8.95 10 10

100 10

15

1.117 10 8
By trial and error, V m 0.407 V
Now

6.708 10 4
1.183 10 15
Na

m
exp m 1 L
(ii) 1

V
V
IS
t

(c)

J S 5.184 10 7

100 10 3
V oc 0.0259 ln 1
8.95 10 10

0.480 V

or

V
1
I 50 10 3 4.579 10 12 exp

Vt
We see that when I 0 ,
V VOC 0.599 V.

We find

V (V)

I (mA)

0
0.1
0.2
0.3
0.4

50
50
50
50
49.98

0.45
0.50
0.55
0.57
0.59

Pm I mV m 169 0.402 67.9

49.84
48.89
42.36
33.46
14.19

mW

(b) The voltage at the maximum power point

is found from

Vm
Vm
I
1 L
exp

Vt
IS
Vt
50 10 3
1
4.58 10 12
1.092 1010

By trial and error,

V m 0.520 V
At this point, we find
I m 47.6 mA
so the maximum power is

Pm I mV m 47.6 0.520

or

V
V

I L I S exp

RL
Vt

V Vm
0.520

I
Im
47.6 10 3

(b)

R 10.9

0.5367 V
V
V
1 m exp m
Vt
Vt

180 10 3
0.0259 ln 1
2 10 9

0.474 V

180 10 3
2 10 9

9 10 7

IL
IS

100 10 3
10 10

By trial and error, V m 0.461 V

Then

10 9

m
exp m 1 L
(b) 1

V
V
IS
t

100 10 3
10 10

_______________________________________
14.15
(a) V oc

V
V

180 10 3 2 10 9 exp

3.568
0.0259
By trial and error, V 0.444 V
V
0.444

0.1244 A
Then I
RL
3.568
P IV 124.4 0.444 55.2
mW
_______________________________________
14.16

(c) We have

or

Now

(a) V oc 0.0259 ln 1

Pm 24.8 mW

V IR R

Vm
0.402

2.379
Im
0.169
(d) R L 1.5 2.379 3.568
(c) R L

0.461
I m 100 10 3 10 10 exp

0.0259
9.463 10 2 A 94.63 mA

Pm I mV m 94.63 0.461 43.62

mW

By trial and error, V m 0.402 V

V
I m I L I S exp m
Vt

10
21.7 n 22 cells
0.461
(d) Now V 22 0.461 10.14 V
(c) n

P IV

5.2 I 10.14 I 0.5128 A

0.402

0
.0259
1.69 10 1 A 169 mA

180 10 3 2 10 9 exp

Then n

0.5128
5.42 n 6
0.09463

(e) Then I 6 0.09463 0.5678 A

V
10.14

17.86
I
0.5678
_______________________________________
14.17
Let x 0 correspond to the edge of the
space
charge region in the p-type material. Then in
the p-region
So R L

Dn
or

d n p
2

dx

d 2 n p

dx 2

GL

n p
L2n

n p
n

GL
Dn

where

G L x O exp x

Then we have

d 2 n p
dx

n p
L

2
n

O
exp x
Dn

The general solution is of the form

x
x
B exp

n p x A exp

L
Ln
n

O n
exp x
2 L2n 1
As

x , n p

0 so that B 0 . Then

x

2 O2 n exp x
n p x A exp

Ln Ln 1
O n
We also have n p 0 0 A 2 2
,
Ln 1
which yields

O n
2 L2n 1

We then obtain

x
O n
exp x
exp
2 2

Ln 1

Ln
where O is the incident flux at x 0 .

n p x

_______________________________________
14.18
For 90% absorption, we have

x
exp x 0.10
O

Then

exp x

1
10
0 .1

or

ln 10

For h 1.7 eV , 10 4 cm
Then

1
4
ln 10 2.3 10 cm
4
10

x
or

x 2.3 m

and for h 2.0 eV, 10 5 cm

Then

1
5
10

x
or

4
ln 10 0.23 10 cm

x 0.23 m
_______________________________________