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    Etching For Bulk Micromachining (Cavity/Cantilever Anisotropic)

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    sasis
    This document discusses micromachining of silicon for microelectromechanical systems (MEMS). It describes dry etching techniques like deep reactive ion etching that can anisotropically etch silicon cavities and cantilevers. Silicon is discussed as a material for MEMS due to its properties as a semiconductor, insulator, and mechanical material that can be precisely patterned through photolithography and etched using wet, dry, plasma, inert, and reactive etching techniques to machine features at the bulk and surface levels for sensing, processing, communication, and actuation applications in microscopic domains.

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    Etching For Bulk Micromachining (Cavity/Cantilever Anisotropic)

    Uploaded by

    sasis
    19 views11 pages
    This document discusses micromachining of silicon for microelectromechanical systems (MEMS). It describes dry etching techniques like deep reactive ion etching that can anisotropically etch silicon cavities and cantilevers. Silicon is discussed as a material for MEMS due to its properties as a semiconductor, insulator, and mechanical material that can be precisely patterned through photolithography and etched using wet, dry, plasma, inert, and reactive etching techniques to machine features at the bulk and surface levels for sensing, processing, communication, and actuation applications in microscopic domains.

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    MEMS2

    Original Title

    MEMS2

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    This document discusses micromachining of silicon for microelectromechanical systems (MEMS). It describes dry etching techniques like deep reactive ion etching that can anisotropically etch silicon cavities and cantilevers. Silicon is discussed as a material for MEMS due to its properties as a semiconductor, insulator, and mechanical material that can be precisely patterned through photolithography and etched using wet, dry, plasma, inert, and reactive etching techniques to machine features at the bulk and surface levels for sensing, processing, communication, and actuation applications in microscopic domains.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    Download as pptx, pdf, or txt
    19 views11 pages

    Etching For Bulk Micromachining (Cavity/Cantilever Anisotropic)

    Uploaded by

    sasis
    This document discusses micromachining of silicon for microelectromechanical systems (MEMS). It describes dry etching techniques like deep reactive ion etching that can anisotropically etch silicon cavities and cantilevers. Silicon is discussed as a material for MEMS due to its properties as a semiconductor, insulator, and mechanical material that can be precisely patterned through photolithography and etched using wet, dry, plasma, inert, and reactive etching techniques to machine features at the bulk and surface levels for sensing, processing, communication, and actuation applications in microscopic domains.

    Copyright:

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    Download as PPTX, PDF, TXT or read online from Scribd
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    Download as pptx, pdf, or txt
    of 11

    ETCHING for BULK

    MICROMACHINING
    (Cavity/Cantilever Anisotropic)

    DRY (Plasma) ETCHING

    Deep Reactive Ion Etch


    (DRIE)

    Single Crystal Silicon for


    MEMS

    Single Crystal Silicon for


    MEMS

    Single Crystal Silicon for


    MEMS

    What is MICRO-MACHINING?

    h What can Micromachined Parts/Systems do for


    us?

    Be a Conduit to Microscopic
    Domain:
    1. Sensing (Information)
    2. Information Processing
    3. Communication
    4. Manipulation (Actuation
    and Control)

    Why / Why not

    SILICON?
    Semiconductor:
    Active Devices + Sensors
    (Photo-Magneto-Strain Sensing)
    Insulator:

    SiO2 , Si3N4 , Glass

    Thin Film Conductor:

    Aluminum, Gold, Silicides

    PhotoLithography: Planar control (+ & -)

    Mechanical Material

    SILICON?

    Stiff => Thinning is required for appreciable strain

    Micromachining of

    SILICON?
    Additive Processes:
    Chemical and Physical Deposition
    (Thin Layers only) (Single/Poly)
    Removal Processes: Chemical and Physical Etching
    (Wet/Dry/Plasma/Inert/Reactive)
    (Bulk/Film) (Anisotropic/Isotropic)

    MICROMACHINING of SILICON =>


    (a) BULK (substrate)
    (b) SURFACE (films)

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