ET375

FUJI POWER TRANSISTOR

TRIPLE DIFFUSED PLANER TYPE

HIGH VOLTAGE, HIGH SPEED SWITCHING

Outline Drawings
TO-3P

Features
High D.C. current gain
High reliability

Applications
Switching regulators
General purpose power amplifiers
JEDEC
EIAJ

SC-65

Equivqlent Circuit Schematic

Maximum ratings and characteristic
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Emitterr-Base voltage
Collector current
Base current
Collector power disspation
Operating junction temperature
Storage temperature

Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg

Rating
650
450
6
15
2
80
+150
-55 to +150

Unit
V
V
V
A
A
W
C
C

Electrical characteristics (Tc =25C unless otherwise specified)

Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time

Symbol
VCBO
VCEO(SUS)
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf

Test Conditions
ICBO = 1.0mA
IC = 1.0A
VCBO = 600V
VEBO = 6V
IC = 15A, VCE = 5V
IC = 15A, IB = 0.5A

Min.

Typ.

Max.

Units

1.0
200

V
V
mA
mA

2.0
2.5
1.0
12.0
2.0

V
V
s
s
s

Max.

Units

1.50

C/W

600
450

100

IC = 15A, IB1 = 0.5A

IB2 = -0.5A, RL = 20
Pw = 20s, Duty=<2%

Thermalcharacteristics
Item
Thermal resistance

Symbol
Rth(j-c)

Test Conditions
Junctionl to case

Min.

Typ.

ET375

FUJI POWER TRANSISTOR

Characteristics