S DP /B 60N03L

S amHop Microelectronics C orp.

May,2004 ver1.1

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

4

P R ODUC T S UMMAR Y
V DS S

F E AT UR E S

R DS (on) ( m W ) Max

ID

High power and current handling capability.

11 @ V G S = 10V
30V

S uper high dense cell design for extremely low R DS (ON).

56A

TO-220 & TO-263 package.

19 @ V G S = 4.5V

D
D

G
D
S

G
S DP S E R IE S
TO-220

S DB S E R IE S
TO-263(DD-P AK)

ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)

S ymbol

Limit

Unit

Drain-S ource Voltage

V DS

30

Gate-S ource Voltage

V GS

20

ID

56

IDM

168

Drain-S ource Diode Forward C urrent

IS

60

Maximum P ower Dissipation @ Tc=25 C

PD

75

T J , T S TG

-65 to 175

P arameter

Drain C urrent-C ontinuous

-P ulsed

@ TJ=125 C

Operating and S torage Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-C ase

R JC

2.5

C /W

Thermal R esistance, Junction-to-Ambient

R JA

62.5

C /W

S DP /B 60N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
4

Parameter

Min Typ Max Unit

S ymbol

Condition

Drain-S ource Breakdown Voltage

BV DS S

V GS = 0V, ID = 250uA

Zero Gate Voltage Drain Current

IDS S

V DS = 24V, V GS =0V

10

uA

Gate-Body Leakage

IGS S

V GS = 16V, V DS = 0V

100

nA

Gate Threshold Voltage

V GS (th)

V DS = V GS , ID = 250uA

1.5

Drain-S ource On-S tate R esistance

R DS (ON)

V GS = 10V, ID = 30A

9.5

11 m ohm

V GS = 4.5V, ID = 24A

16

19 m ohm

On-S tate Drain Current

ID(ON)
gFS

OFF CHAR ACTE R IS TICS

30

ON CHAR ACTE R IS TICS a

Forward Transconductance

V GS = 10V, V DS = 10V

60
32

1200

PF

550

PF

160

PF

25
30.5

ns
ns

60

ns

27.5

ns

V DS =15V,ID =30A,V GS =10V

34.1

nC

V DS =15V,ID =30A,V GS =4.5V

18.7

nC

V DS =15V, ID = 30A,
V GS =10V

6.3

nC

nC

V DS = 10V, ID = 26A

DYNAMIC CHAR ACTE R IS TICS b

Input Capacitance

C IS S

Output Capacitance

C OS S

R everse Transfer Capacitance

CRSS

S WITCHING CHAR ACTE R IS TICS

Turn-On Delay Time
R ise Time
Turn-Off Delay Time

V DS =15V, V GS = 0V
f =1.0MH Z

tD(ON)
tr
tD(OFF)

Fall Time

tf

Total Gate Charge

Qg

Gate-S ource Charge

Q gs

Gate-Drain Charge

Q gd

V DD = 15V,
ID = 1A,
V GS = 10V,
R GE N =60 ohm

S DP /B 60N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter

Min Typ Max Unit

Condition

S ymbol

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a

Diode Forward Voltage

V GS = 0V, Is =26A

VSD

0.9

1.3

Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
50

25
25 C

I D , Drain C urrent (A)

ID , Drain C urrent(A)

V G S =10,9,8,7,6,5,4V
40

30

20

V G S =3V

10

15
10
-55 C
5
0

0
0

0.5

1.0

1.5

2.0

2.5

3.0

R DS (ON) , Normalized
Drain-S ource On-R es is tance

C , C apacitance (pF )

2.2

2500
2000
1500
C is s
1000
C os s
C rs s
0
5

10

15

20

25

F igure 2. Trans fer C haracteris tics

3000

V G S , G ate-to-S ource Voltage (V )

V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

500

T J =125 C

20

1.8
1.4
1.0
0.6
0.2
0

30

V G S =10V
I D =30A

-50

-25

25

50

75

100 125
T j( C )

V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

F igure 4. On-R es is tance Variation with

Temperature

B V DS S , Normalized
Drain-S ource B reakdown V oltage

1.3
V DS =V G S
I D =250uA

1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25

25

50

75

I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25

25

50

75 100 125

T j, J unction T emperature ( C )

T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation

with T emperature

F igure 6. B reakdown V oltage V ariation

with T emperature
50

40

Is , S ource-drain current (A)

gF S , T rans conductance (S )

1.15

100 125

50

30
20
10
V DS =10V

10

0.1

0
0

10

20

30

0.4

40

0.6

0.8

1.0

1.2

1.4

I DS , Drain-S ource C urrent (A)

V S D , B ody Diode F orward V oltage (V )

F igure 7. T rans conductance V ariation

with Drain C urrent

F igure 8. B ody Diode F orward V oltage

V ariation with S ource C urrent

10

300
200

V DS =15V
I D =30A

100

I D , Drain C urrent (A)

V G S , G ate to S ource V oltage (V )

V th, Normalized
G ate-S ource T hres hold V oltage

S DP /B 60N03L

6
4
2
0

10

15

20

25

30

Qg, T otal G ate C harge (nC )

it

10

1m

10
ms
10
0m
DC s

V G S =10V
S ingle P ulse
T c=25 C

1
0.1

35 40

L im

10

0.5

(
DS

)
ON

10

30 60

V DS , Drain-S ource V oltage (V )

F igure 10. Maximum S afe

O perating Area

F igure 9. G ate C harge

4

S DP /B 60N03L
V DD
ton
RL

V IN
D

tf
90%

90%

V OUT
V OUT

VG S
R GE N

toff
td(off)

tr

td(on)

10%

INVE R TE D

10%

G
90%

V IN

50%

50%

10%

P ULS E WIDTH

F igure 12. S witching Waveforms

F igure 11. S witching T es t C ircuit

r(t),Normalized E ffective
T ransient T hermal Impedance

2
1
D=0.5

0.2
0.1
0.1

P DM

0.05

t1
0.02
0.01

1.
2.
3.
4.

S ingle P uls e
0.01
0.01

0.1

10

100

t2

R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t)
Duty C ycle, D=t1/t2
1000

S quare Wave P uls e Duration (ms ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

10000

S DP /B 60N03L