ST 2SC3198

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G
and L, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25)

Symbol

Value

Unit

Collector Base Voltage

VCBO

60

Collector Emitter Voltage

VCEO

50

Emitter Base Voltage

VEBO

Collector Current

IC

150

mA

Base Current

IB

50

mA

Ptot

500

mW

Junction Temperature

Tj

125

Storage Temperature Range

TS

-55 to +125

Power Dissipation

C
C

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002

ST 2SC3198
Characteristics at Tamb=25 OC
Symbol

Min.

Typ.

Max.

Unit

Current Gain Group O

hFE

70

140

hFE

120

240

hFE

200

400

hFE

350

700

hFE

25

100

VCE(sat)

0.1

0.25

VBE(sat)

ICBO

0.1

IEBO

0.1

fT

80

MHz

COB

3.5

pF

Rbb

50

NF

10

dB

DC Current Gain
at VCE=6V, IC=2mA

at VCE=6V, IC=150mA
Collector Emitter Saturation Voltage
at IC=100mA, IB=10mA
Base Emitter Saturation Voltage
at IC=100mA, IB=10mA
Collector Cutoff Current
at VCB=60V
Emitter Cutoff Current
at VEB=5V
Transition Frequency
at VCE=10V, IE=1mA
Collector Output Capacitance
at VCB=10V, f=1MHz
Base Intrinsic Resistance
at VCB=10V IC=1mA, f=30MHz
Noise Figure
at VCE=6V, IC=0.1Ma
at f=1KHz, RG=10K

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002