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  • NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output /damper Diode

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    This document provides specifications for the NTE2331 silicon NPN transistor, which is intended for use in color TV horizontal deflection output applications. It has a high speed of 100 nanoseconds, high breakdown voltage of 1500V, and includes an on-chip damper diode. The transistor has maximum ratings of 1500V collector-base voltage, 800V collector-emitter voltage, and 6A continuous collector current. It provides high reliability for operating in temperatures up to 150°C.

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    NTE2331.pdfe 2331

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    This document provides specifications for the NTE2331 silicon NPN transistor, which is intended for use in color TV horizontal deflection output applications. It has a high speed of 100 nanoseconds, high breakdown voltage of 1500V, and includes an on-chip damper diode. The transistor has maximum ratings of 1500V collector-base voltage, 800V collector-emitter voltage, and 6A continuous collector current. It provides high reliability for operating in temperatures up to 150°C.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    48 views2 pages

    NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output /damper Diode

    Uploaded by

    daniwesa
    This document provides specifications for the NTE2331 silicon NPN transistor, which is intended for use in color TV horizontal deflection output applications. It has a high speed of 100 nanoseconds, high breakdown voltage of 1500V, and includes an on-chip damper diode. The transistor has maximum ratings of 1500V collector-base voltage, 800V collector-emitter voltage, and 6A continuous collector current. It provides high reliability for operating in temperatures up to 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 2

    NTE2331

    Silicon NPN Transistor


    Color TV Horizontal Deflection Output
    w/Damper Diode
    Applications:
    D Color TV Horizontal Deflection Output
    D Color Display Horizontal Deflection Output
    Features:
    D High Speed (tf = 100nsec)
    D High Breakdown Voltage (VCBO = 1500V)
    D High Reliability
    D OnChip Damper Diode
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    Collector Current, IC
    Continous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
    Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter
    Collector Cutoff Current

    Collector Sustain Voltage

    Symbol

    Test Conditions

    Min

    Typ

    Max

    Unit

    ICES

    VCE = 1500V

    1.0

    mA

    ICBO

    VCB = 800V

    10

    800

    VEB = 4V

    40

    130

    mA

    VCEO(sus) IC = 100mA, IB = 0

    Emitter Cutoff Current

    IEBO

    Saturation Voltage
    Collector to Emitter

    VCE(sat)

    IC = 5A, IB = 1.0A

    Saturation Voltage
    Base to Emitter

    VBE(sat)

    IC = 5A, IB = 1.0A

    1.5

    Electrical Characteristics (Contd): (TA = +25C unless otherwise specified)


    Parameter
    DC Current Gain

    Diode Forward Voltage


    Fall Time

    Symbol

    Test Conditions

    Min

    Typ

    Max

    Unit

    hFE1

    VCE = 5V, IC = 1A

    hFE2

    VCE = 5V, IC = 5A

    10

    IEC = 6A

    IC = 4A, IB1 = 0.8A, IB2 = 1.6A

    0.1

    0.3

    VF
    tf

    .221 (5.6)

    .134 (3.4) Dia

    .123 (3.1)

    .630 (16.0)

    .315
    (8.0)
    .866
    (22.0)

    .158 (4.0)

    .804
    (20.4)

    .215 (5.45)

    .040 (1.0)

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