2N6284 (NPN); 2N6286,

2N6287 (PNP)
Preferred Device

Darlington Complementary
Silicon Power Transistors
These packages are designed for generalpurpose amplifier and
lowfrequency switching applications.
Features

High DC Current Gain @ IC = 10 Adc

hFE = 2400 (Typ) 2N6284

= 4000 (Typ) 2N6287
CollectorEmitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
PbFree Packages are Available*

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20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
COLLECTOR
CASE
BASE
1

MAXIMUM RATINGS (Note 1)

Symbol

Rating
CollectorEmitter Voltage

CollectorBase Voltage

2N6286
2N6284/87
2N6286
2N6284/87

EmitterBase Voltage

VCEO

VCB

Value

Unit

EMITTER 2

Vdc

80
100

MARKING DIAGRAM
Vdc

80
100

VEB

5.0

Vdc

Collector Current Continuous

Peak

IC

20
40

Adc

Base Current

IB

0.5

Adc

Total Power Dissipation @ TC = 25C

Derate above 25C

PD

160
0.915

W
W/C

Operating and Storage Temperature

Range

TJ, Tstg

65 to + 200

Symbol

Max

Unit

Thermal Resistance, JunctiontoCase

RqJC

1.09

C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.

2N628x
G
A
YY
WW
MEX

Device
2N6284

2N6286
2N6286G
2N6287

Semiconductor Components Industries, LLC, 2008

September, 2008 Rev. 4

= Device Code
x = 4, 6 or 7
= PbFree Package
= Location Code
= Year
= Work Week
= Country of Orgin

ORDERING INFORMATION

2N6284G

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

2N628xG
AYYWW
MEX

TO204AA (TO3)
CASE 107
STYLE 1

THERMAL CHARACTERISTICS (Note 1)

Characteristic

2N6287G

Package

Shipping

TO3

100 Units/Tray

TO3
(PbFree)

100 Units/Tray

TO3

100 Units/Tray

TO3
(PbFree)

100 Units/Tray

TO3

100 Units/Tray

TO3
(PbFree)

100 Units/Tray

Publication Order Number:

2N6284/D

2N6284 (NPN); 2N6286, 2N6287 (PNP)

PD, POWER DISSIPATION (WATTS)

160
140
120
100
80
60
40
20
0

25

75
150
50
100
125
TC, CASE TEMPERATURE (C)

200

175

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

80

100

1.0
1.0

0.5
5.0

2.0

750
100

18,000

2.0
3.0

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage

(IC = 0.1 Adc, IB = 0)

2N6286
2N6284, 2N6287

VCEO(sus)

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)

ICEO

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

Vdc

mAdc

mAdc

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)

VCE(sat)

BaseEmitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)

VBE(on)

2.8

Vdc

BaseEmitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)

VBE(sat)

4.0

Vdc

|hfe|

4.0

MHz

400
600

300

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter SmallSignal ShortCircuit

Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

2N6284
2N6286, 2N6287

SmallSignal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

Cob

hfe

2. Indicates JEDEC Registered Data.

3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%

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2

pF

2N6284 (NPN); 2N6286, 2N6287 (PNP)

VCC
- 30 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA

RC

SCOPE

TUT

RB

V2
APPROX

+ 8.0 V
0
V1
APPROX

- 12 V

D1

51

25 ms

tr, tf v 10 ns
DUTY CYCLE = 1.0%

[ 8.0 k

[ 50

+ 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

Figure 2. Switching Times Test Circuit

10
7.0
5.0

ts

2N6284 (NPN)
2N6287 (PNP)

t, TIME (s)

3.0
2.0
tf

tr

1.0
0.7
0.5
0.3 VCC = 30 Vdc
I /I = 250
0.2 C B
IB1 = IB2
td @ VBE(off) = 0 V
T = 25C
0.1 J
0.5 0.7 1.0
2.0 3.0
0.2 0.3
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)

20

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

Figure 3. Switching Times

1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2
0.1
0.07

0.1

0.02

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)

0.05
0.03

0.01

0.02
SINGLE PULSE
0.01
0.01

P(pk)

RqJC(t) = r(t) RqJC

RqJC = 1.09C/W MAX

0.05

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

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3

20

30

50

t1
t2
DUTY CYCLE, D = t1/t2
100

200 300

500

1000

2N6284 (NPN); 2N6286, 2N6287 (PNP)

ACTIVEREGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) < 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

50
20

0.5 ms

10

1.0 ms

5.0
5.0 ms
dc

2.0
1.0

TJ = 200C

0.5
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25C
SINGLE PULSE

0.2
0.1

0.05

2.0

5.0

10

20

50

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. 2N6284, 2N6287

hFE, SMALL-SIGNAL CURRENT GAIN

10,000
TJ = 25C
VCE = 3.0 Vdc
IC = 10 A

5000
2000
1000
500
200
100
50
2N6284 (NPN)
2N6287 (PNP)

20
10

1.0

2.0

5.0 10
20
50 100
f, FREQUENCY (kHz)

200

500 1000

Figure 6. SmallSignal Current Gain

1000
TJ = 25C
700
C, CAPACITANCE (PF)

IC, COLLECTOR CURRENT (AMP)

0.1 ms

500

300

Cib
Cob

200
2N6284 (NPN)
2N6287 (PNP)
100
0.1 0.2

0.5
1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

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4

50

100

2N6284 (NPN); 2N6286, 2N6287 (PNP)

NPN
2N6284

PNP
2N6287

VCE = 3.0 V

30,000
20,000

TJ = 150C

10,000

20,000

VCE = 3.0 V

7000
5000
3000
2000
1000
700

hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

10,000

25C
-55C

500
300
200

5.0 7.0 10
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

0.2 0.3

TJ = 150C

7000
5000
25C
3000
2000
-55C

1000
700
500
300
0.2 0.3

20

0.5 0.7 1.0

2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)

20

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 8. DC Current Gain

3.0
TJ = 25C
2.6

IC = 5.0 A

10 A

15 A

2.2

1.8

1.4

1.0
0.5 0.7 1.0

20

2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)

30

50

3.0
TJ = 25C
2.6
IC = 5.0 A

15 A

10 A

2.2

1.8

1.4

1.0

0.5 0.7 1.0

2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)

20

30

50

Figure 9. Collector Saturation Region

3.0

3.0
TJ = 25C

2.5

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

TJ = 25C

2.0

1.5

1.0

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

2.5

2.0

1.5

VBE(sat) @ IC/IB = 250

1.0

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

0.5

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

VCE(sat) @ IC/IB = 250

0.5

20

0.2 0.3

IC, COLLECTOR CURRENT (AMP)

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

http://onsemi.com
5

20

2N6284 (NPN); 2N6286, 2N6287 (PNP)

PNP
2N6287

+5.0
+4.0
+3.0

*APPLIES FOR IC/IB

V, TEMPERATURE COEFFICIENTS (mV/C)

V, TEMPERATURE COEFFICIENTS (mV/C)

NPN
2N6284

hFE@VCE + 3.0V
250

+2.0

25C to 150C

+1.0
-55C to + 25C

0
-1.0

*qVC for VCE(sat)

-2.0
-3.0

25C to + 150C
qVB for VBE

-55C to + 25C

-4.0
-5.0
0.2 0.3

0.7 1.0

0.5

2.0 3.0

5.0 7.0 10

+5.0
+4.0

*APPLIES FOR IC/IB

+3.0
+2.0

25C to 150C

+1.0

-55C to + 25C

0
-1.0

*qVC for VCE(sat)

-2.0
-3.0

25C to + 150C

qVB for VBE

-4.0

-55C to + 25C

-5.0
0.2 0.3

20

hFE@VCE + 3.0V
250

0.5

IC, COLLECTOR CURRENT (AMP)

0.7 1.0

2.0

3.0

5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

104

103
VCE = 30 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

105

103
TJ = 150C
102
100C
101
REVERSE

FORWARD

100

VCE = 30 V

102

TJ = 150C
101
100C

100
10-1

REVERSE
10-2

FORWARD

25C

25C
10-1
-0.6 -0.4

-0.2

+0.2 +0.4 +0.6 +0.8

10-3
+0.6 +0.4

+1.0 +1.2 + 1.4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

+0.2

-0.2 -0.4

-0.6 -0.8

-1.0 -1.2 -1.4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector CutOff Region

COLLECTOR

COLLECTOR

NPN
2N6284

PNP
2N6287

BASE

BASE

[ 8.0 k

[ 60

[ 8.0 k

EMITTER

[ 60

EMITTER

Figure 13. Darlington Schematic

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6

2N6284 (NPN); 2N6286, 2N6287 (PNP)

PACKAGE DIMENSIONS
TO204 (TO3)
CASE 107
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

A
N
C
E
D

T
K

2 PL

0.13 (0.005)
U

SEATING
PLANE

T Q

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

T Y

Q
0.13 (0.005)

INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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2N6284/D