3.

044 MATERIALS PROCESSING

LECTURE 10

1.

2.

Casting: Thick mold, mold conduction limiting: s

Die Casting: Thin cooled mold, interface limiting: s t

Date: March 12th, 2012.

1

t tf

2V

LECTURE 10

.
.
.
3. Thick casting in cooled mold .
T
T
T .
ds
k
.
.
.
=
.
s/l interface:
, where
0
.

dt
Hf
.
.
.x
x
x l

.
x
l
x

solid = ERF s
2 t
T T0
=
A T0

s(t)= 2 st
.
tf
e

ERF
=

A
(Tm
T0)cp,s

m
K

Hf

4. Growing single crystal silicon

no
T gradients
in solid
or
liquid
inert
atmosphere:
h 10
20 W
2

.2

Read o chart

3.044 MATERIALS PROCESSING

ds =
v = pulling velocity =
.

k
.

Assume steady state:

con
qd
in

xs
T ..

dt

.
. A1

.
in

Hf

xs
T ..

..

out

.
. 0
, where
.
z
T

.
z
.l

.
..s

.
.

con
qd
out

T
.

qconv

v =
qin
A vHin
v =1
qout
H
= cpT
A1vHout

T T0

=
Tf T0 EXP

A1 + qin qout (h(T Tf )A 2 )=0

v
Solve for qinv and qout
:
energyin
massin
time =
time
Hin
m w = Vol
Vol = A1 v

Solve Heat Balance:

xs

. .
. .v
.
2h
2
z

(v2) +
2
Rk

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3.044 Materials Processing

Spring 2013

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